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Unit 1-Part1

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24 views

Unit 1-Part1

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isf2020.o
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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VLSI Tehniques(ELEC 30007)

Unit 1: Introduction to
VLSI Design
MOS Transistor

(Kang & Leblebici, 2003)

3
MOS transistor

(Kang & Leblebici, 2003)

4
Metal Oxide Semiconductor
(MOS) Structure
Consider a two terminal MOS structure;

(Kang & Leblebici, 2003)

MOS system under external bias:


Three different operating regions
 Accumulation
 Depletion
 Inversion

6
Accumulation:

(Kang & Leblebici, 2003)

 If a negative voltage applied to the gate ,the holes in the p-type substrate are attracted
towards the semiconductor oxide interface.
 The majority carrier concentration near the surface becomes larger than the equilibrium
hole concentration in the substrate.
 This condition is called carrier accumulation on the surface.
 Hence the hole density near the surface increases as a result of the applied negative
gate bias, and the electron concentration decreases as the negatively charged electrons
are pushed deeper into the substrate
7
Depletion:

(Kang & Leblebici, 2003)

 A small positive gate bias Vg is applied to the gate terminal.


 The majority carriers , the holes in the substrate will be repelled back into the
substrate as a result of the positive gate bias and those holes will leave negatively
charged accepter ions behind.
 Thus a depletion region is created near the surface, under this bias condition the
region near the semiconductor oxide is nearly devoid of all the mobile carriers.

8
Inversion:

(Kang & Leblebici, 2003)

 If we apply the large positive the gate bias, the electric field generated in the downward direction is
strong enough that attracts the additional minority charge carriers (i.e. electrons) from the bulk
substrate to the surface.
 As a result the n-type region is created near the surface by the positive gate bias as shown in the
figure.
 This layer is called the inversion layer and this condition is called surface inversion.
 The surface is said to be inverted when the density of mobile electrons on the surface becomes equal
to the density of holes in the bulk (p-type) substrate

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