PAM8304

3W MONO CLASS-D AUDIO AMPLIFIER

Description Pin Assignments

The PAM8304 is a mono, filter-less, Class-D amplifier with high SNR U-DFN3030-8
DFN3X3-8L (Type E)
Top
Top View
View
(signal-to-noise ratio) and differential input that helps eliminate noise.
The PAM8304 supports 2.8V to 6V operation, which makes it ideal for OUT+ 1 8 OUT-
up to 4-cell alkaline battery applications. The PAM8304 is capable of

XXXYW
P8304
driving speaker loads as low as 3Ω with a 5V supply, maximizing the PVDD 2 7 GND

output power. VDD 3 6 SD

The device’s over 90% efficiency and small PCB area make the IN- 4 5 IN+

PAM8304 Class-D amplifier ideal for portable applications. The output

uses a filter-less architecture, minimizing the number of external MSOP-8
MSOP-8L
Top
TopView
View
components in the PCB area whilst providing a high-performance,
simple, and lower cost system. OUT+ 1 8 OUT-

XXXYW
P8 304
The PAM8304 features short-circuit protection, thermal shutdown, PVDD 2 7 GND

and undervoltage lockout. VDD 3 6 SD

IN- 4 5 IN+
The PAM8304 is available in the U-DFN3030-8 (Type E) and MSOP-8
packages.

Features Applications
 Supply Voltage from 2.8V to 6.0V  MP4/MP3
 3Ω Driving Capability  GPS
 3.0W@10% THD Output with a 4Ω Load and 5V Supply  Set-top-boxes
 High Efficiency Up to 90% @1W with an 8Ω Load  Tablets/digital photo frames
 Shutdown Current < 1μA  Electronic dictionaries
 Superior Low Noise Without Input  Portable game machines
 Short-Circuit Protection
 Thermal Shutdown
 Available in Space-Saving U-DFN3030-8 (Type E) and MSOP-8
Packages
 Pb-Free Package
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

PAM8304 1 of 12 August 2023

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 PAM8304

Typical Applications Circuit

V DD

1μ F

P V DD V DD

0 .1 μ F
VIN IN+
OU T +
0 .1 μ F
IN-
PA M 8 3 0 4

/SD /SD
OU T -

P GN D GN D

Pin Descriptions
Pin Name MSOP-8 / U-DFN3030-8 (Type E) Function
OUT+ 1 Positive BTL Output
PVDD 2 Power Supply
VDD 3 Analog Power Supply
IN- 4 Negative Differential Input
IN+ 5 Positive Differential Input
/SD 6 Shutdown Terminal, Active Low
GND 7 Ground
OUT- 8 Negative BTL Output
Exposed Pad — NC

Functional Block Diagram

VDD

IN+ PVDD
Gate
- PWM Driv e OUT+
Modulator
+ Gate
IN- OUT-
Driv e

SD SD UVLO SC
Protec t

Bias and Startup GND

OSC Protec tion OTP
Vref

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 PAM8304

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Parameter Rating Unit
Supply Voltage (VDD) 6.5 V
Input Voltage (IN+, IN-, /SD) -0.3 to VDD + 0.3 V
Storage Temperature -65 to +150 °C
Maximum Junction Temperature +150 °C

Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)

Symbol Parameter Min Max Unit
VDD Supply Voltage 2.8 6.0 V
TA Operating Ambient Temperature Range -40 +85 °C
TJ Junction Temperature Range -40 +125 °C

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 PAM8304

Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH) + R + L(33μH), unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Unit
VDD Supply Voltage — 2.8 — 6.0 V
VDD = 5.0V — 3.0 —
THD+N = 10%, f = 1kHz,
VDD = 3.6V — 1.5 — W
R = 4Ω
VDD = 3.2V — 1.2 —
VDD = 5.0V — 2.4 —
THD+N = 1%, f = 1kHz,
VDD = 3.6V — 1.25 — W
R = 4Ω
VDD = 3.2V — 1.0 —
PO Output Power
VDD = 5.0V — 1.75 —
THD+N = 10%, f = 1kHz,
VDD = 3.6V — 0.90 — W
R = 8Ω
VDD = 3.2V — 0.70 —
VDD = 5.0V — 1.40 —
THD+N = 1%, f = 1kHz,
VDD = 3.6V — 0.72 — W
R = 8Ω
VDD = 3.2V — 0.60 —
VDD = 5.0V, PO = 1W, R = 8Ω — 0.17 —
VDD = 3.6V, PO = 0.1W, R = 8Ω f = 1kHz — 0.16 — %
Total Harmonic VDD = 3.2V, PO = 0.1W, R = 8Ω — 0.14 —
THD+N Distortion Plus
Noise VDD = 5.0V, PO = 0.5W, R = 4Ω — 0.14 —
VDD = 3.6V, PO = 0.2W, R = 4Ω f = 1kHz — 0.16 — %
VDD = 3.2V, PO = 0.1W, R = 4Ω — 0.17 —
f = 217Hz — -68 —
Power-Supply Ripple VDD = 3.6V, Inputs
PSRR f = 1kHz — -70 — dB
Rejection AC-Grounded with C = 1μF
f = 10kHz — -67 —
Dyn Dynamic Range VDD = 5V, THD = 1%, R = 8Ω f = 1kHz — 95 — dB
No A-Weighting — 170 —
VN Output Noise Inputs AC-Grounded μV
A-Weighting — 130 —
RL = 8Ω, THD = 10% — 93 —
η Efficiency f = 1kHz %
RL = 4Ω, THD = 10% — 86 —
IQ Quiescent Current VDD = 5V No Load — 5 — mA
ISD Shutdown Current VDD = 2.8V to 5V /SD=0V — — 1 μA
Static Drain-to Source High-Side pMOS, I = 500mA VDD = 5.0V — 325 — mΩ
RDS(ON)
On-State Resistor Low-Side nMOS, I = 500mA VDD = 5.0V — 200 — mΩ
fSW Switching Frequency VDD = 2.8V to 5V — — 400 — kHz
GV Closed-Loop Gain VDD = 2.8V to 5V — — 300K/Rin — V/V
VOS Output Offset Voltage Input AC-Grounded, VDD = 5V — — — 50 mV
VIH SD Input High Voltage VDD = 5V — 1.4 — —
V
VIL SD Input Low Voltage VDD = 5V — — — 0.4

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 PAM8304

Performance Characteristics (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH) + R + L(33μH), unless otherwise specified.)

THD+N vs. Output Power (RL = 4Ω) THD+N vs. Output Power (RL = 8Ω)

20 20

10 10

5
VDD = 5.0V VDD = 5.0V
5
THD+N (%)

THD+N (%)
2 2

% % VDD = 3.6V
1 VDD = 3.6V 1

0.5 0.5

0.2 0.2

0.1
1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 5 0.1
1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 3
W
W
Output Power (W) Output Power (W)

THD+N vs. Frequency PSRR vs. Frequency

10 +0
T
-5
5 PO = 300mW -10
VDD = 5.0V
-15

2 VDD = 5.0V -20

-25
THD+N (%)

1
PSRR (dB)

-30

-35
0.5 d
%
VDD = 3.6V B
-40

-45

0.2 -50

-55
0.1
-60

-65
0.05
-70

-75
0.02 -80
20 50 100 200 500 1k 2k 5k 10k 20k 20 50 100 200 500 1k 2k 5k 10k 20k
Hz
Hz
Frequency (Hz) Frequency (Hz)

Frequency Response Noise Floor

+20 +20
+19.5
+10
+19

+18.5 +0 VDD = 5.0V

+18
-10
+17.5
+17
-20

+16.5 -30
Noise (dB)

+16
Gain (dB)

d -40
d +15.5
B B
g +15 r -50
+14.5
A A -60
+14
-70
+13.5
+13 -80
+12.5
-90
+12

+11.5 -100
+11 VDD = 5.0V -110
+10.5
-120
+10 20 50 100 200 500 1k 2k 5k 10k 20k
20 50 100 200 500 1k 2k 5k 10k 20k
Hz Hz
Frequency (Hz) Frequency (Hz)

PAM8304 5 of 12 August 2023

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 PAM8304

Performance Characteristics (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH) + R + L(33μH), unless otherwise specified.)
(continued)

Efficiency vs. Output Power (RL = 4Ω) Efficiency vs. Output Power (RL = 8Ω)

Efficiency (%)
Efficiency (%)

Output Power (mW) Output Power (mW)

Quiescent Current vs. Supply Voltage OSC Frequency vs. Supply Voltage

Startup Response Shutdown Response

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 PAM8304

Application Information
Input Capacitors (Ci)
In a typical application, an input capacitor Ci is required to allow the amplifier to bias the input signal to the proper DC level for optimum operation.
In this case, Ci and the minimum input impedance Ri form a high-pass filter with the corner frequency determined in the following equation:

1
fC 
 2 RiCi

It is important to consider the value of Ci as it directly affects the low-frequency performance of the circuit. For example, when Ri is 150kΩ and the
specification calls for a flat bass response down to 150Hz. The equation is reconfigured as follow to determine the value of Ci:

1
Ci 
 2 Rifc 

When input resistance variation is considered, if Ci is 7nF, one would likely choose a value of 10nF. A further consideration for this capacitor is the
leakage path from the input source through the input network (Ci, Ri, and Rf) to the load. This leakage current creates a DC offset voltage at the
input to the amplifier and reduces useful headroom, especially in high-gain applications. For this reason, a low-leakage tantalum or ceramic
capacitor is recommended. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most
applications as the DC level is held at VDD/2, which is likely higher than the source DC level. Please note that it is important to confirm the
capacitor polarity in the application.

Decoupling Capacitor (CS)

The PAM8304 is a high-performance CMOS audio amplifier that requires adequate power-supply decoupling to ensure the output total harmonic
distortion (THD) is as low as possible. Power-supply decoupling also prevents oscillations caused by long lead length between the amplifier and
the speaker.

Optimum decoupling is achieved by using two different types of capacitors that target different types of noise on the power-supply leads. Higher
frequency transients, spikes, or digital hashes should be filtered with a good low equivalent-series-resistance (ESR) ceramic capacitor with a value
of typically 1μF. This capacitor should be placed as close as possible to the VDD pin of the device. Lower frequency noise signals should be
filtered with a large ceramic capacitor of 10μF or greater. It is recommended to place this capacitor near the audio power amplifier.

How to Reduce EMI

Most applications require a ferrite bead filter for EMI (electromagnetic interference) elimination, as shown in Figure 1. The ferrite filter reduces EMI
around 1MHz and higher. When selecting a ferrite bead, it should be chosen with consideration to high impedance at high frequencies and low
impedance at low frequencies.

Ferrite Bead
OUT+

200pF

Ferrite Bead
OUT-

200pF

Figure 1. Ferrite Bead Filter to Reduce EMI

PAM8304 7 of 12 August 2023

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 PAM8304

Application Information (continued)

Shutdown Operation
The PAM8304 contains amplifier shutdown circuitry in order to reduce power consumption while not in use. When a logic low or ground is applied
to the /SD pin, the PAM8304 will enter a standby mode and supply current drawn will be minimized.

Undervoltage Lockout (UVLO)

The PAM8304 incorporates circuitry designed to detect low supply voltage. When the supply voltage drops to 2.5V or below, the PAM8304 goes
into a state of shutdown. The device returns to normal operation only when VDD is higher than 2.8V.

Short-Circuit Protection (SCP)

The PAM8304 has short-circuit protection circuitry on the outputs to prevent the device from damage when output-to-output shorts or output-to-
GND shorts occur. When a short circuit occurs, the device immediately goes into shutdown state. Once the short is removed the device will be
reactivated.

Overtemperature Protection (OTP)

Thermal protection prevents the device from damage. When the internal die temperature exceeds a typical of +150°C, the device will enter a
shutdown state and the outputs are disabled. This is not a latched fault, once the thermal fault is cleared and the temperature of the die decreases
by 40°C, the device will restart with no external system interaction.

Anti-Pop and Anti-Click Circuitry

The PAM8304 contains circuitry to minimize turn-on and turn-off transients or “click and pops”, where turn-on refers to either power-supply turn-on
or device recovery from shutdown mode. When the device is turned on, the amplifiers are internally muted. An internal current source ramps up
the internal reference voltage. The device will remain in mute mode until the reference voltage reaches half-supply voltage. As soon as the
reference voltage is stable, the device will begin full operation. For the best power-off pop performance, the amplifier should be set in shutdown
mode prior to removing the power-supply voltage.

PAM8304 8 of 12 August 2023

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 PAM8304

Ordering Information

PAM8304 X X X

Pin Configuration Package Type Shipping Package

A: 8 Pin Y: U-DFN3030-8 (Type E) R: Tape & Reel

S: MSOP-8

Packing
Part Number Package
Qty. Carrier
PAM8304AYR U-DFN3030-8 (Type E) 3000 Tape & Reel
PAM8304ASR MSOP-8 2500 Tape & Reel

Marking Information

U-DFN3030-8 MSOP-8
(Type E) 8 7 6 5
P8304: Product
Product Type
CodeMarking Code
P8304 P8304 X : Internal Code
Y : Year : 0 to 9
XXXYW XXXYW W : Week : A to Z : 1 to 26 week;
a to z : 27 to 52 week; z represents
52 and 53 week
1 2 3 4

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 PAM8304

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-DFN3030-8 (Type E)

A
A3
A1 U-DFN3030-8
(Type E)
S eating Plane Dim Min Max Typ
A 0.57 0.63 0.60
A1 0.00 0.05 0.02
D A3 - - 0.15
D2 b 0.20 0.30 0.25
D 2.95 3.05 3.00
D2 2.15 2.35 2.25
( Pin #1 ID)
E 2.95 3.05 3.00
E2 1.40 1.60 1.50
e - - 0.65
E E2 L L 0.30 0.60 0.45
R0

z - - 0.40
. 20

All Dimensions in mm
0

e
z b

MSOP-8

2x
D aaa C MSOP-8
Dim Min Max Typ
A D
A -- 1.10 --
4x10 A1 0.05 0.15 0.10
°
A2 0.75 0.95 0.86
A3 0.29 0.49 0.39
0.25

b 0.22 0.38 0.30

Ø 0.60mmx0.038DP c 0.08 0.23 0.15
Gauge Plane
E D 2.90 3.10 3.00
x S eating Plane
a

E 4.70 5.10 4.90

4x10
C ° L E1 2.90 3.10 3.00
y
E3 2.85 3.05 2.95
e -- -- 0.65
Detail C
L 0.40 0.80 0.60
bbb C
1 2x a 0° 8° 4°
B x -- -- 0.750
b E3
ddd C A-B D y -- -- 0.750
H aaa 0.20
ccc C bbb 0.25
A A2
S eating Plane
ccc 0.10
e
A3 c ddd 0.13
A1 C E1
aaa C D
All Dimensions in mm
S ee Detail C
2x

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 PAM8304

Suggested Pad Layout

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U-DFN3030-8 (Type E)

X2
C

Value
Dimensions
X1 (in mm)
C 0.650
Y2 Y1 X 0.350
X1 2.350
X2 2.300
Y Y 0.650
Y1 1.600
Y2 3.300

MSOP-8

X C

Y
Value
Dimensions
(in mm)
C 0.650
X 0.450
Y1
Y 1.350
Y1 5.300

Mechanical Data
U-DFN3030-8 (Type E)
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish – NiPdAu, Solderable per J-STD-002, Test B1
 Weight: 0.018 grams (Approximate)

MSOP-8
 Moisture Sensitivity: Level 3 per J-STD-020
 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
 Weight: 0.027 grams (Approximate)

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 PAM8304

IMPORTANT NOTICE

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’
products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications,
(c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and
functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control
techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their
applications.

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
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liabilities.

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent
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5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale
(https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.

6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
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7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
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unauthorized use.

9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-and-
conditions/important-notice

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.
All other trademarks are the property of their respective owners.
© 2023 Diodes Incorporated. All Rights Reserved.

www.diodes.com

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