0% found this document useful (0 votes)
32 views9 pages

Stps 60 H 100 C

Uploaded by

Lexi S
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
32 views9 pages

Stps 60 H 100 C

Uploaded by

Lexi S
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 9

STPS60H100C

Datasheet

100 V power Schottky rectifier

A1 Features
K
A2 • High junction temperature capability
• Low leakage current
K • Low thermal resistance
• High frequency operation
• Avalanche capability
• ECOPACK®2 compliant
A2
K
A1 Applications
TO-220AB
• Switching diode
• SMPS
• DC/DC converter
• Telecom power
• Desktop power supply

Description
This dual diode common cathode Schottky rectifier is suited for high frequency
switched mode power supplies.
Packaged in TO-220AB, the STPS60H100C is optimized for use to enhance the
reliability of the application.
Product status

STPS60H100C
Product summary

IF(AV) 2 x 30 A

VRRM 100 V

Tj(max.) 175 °C

VF(typ.) 0.67 V

DS3978 - Rev 3 - August 2018 www.st.com


For further information contact your local STMicroelectronics sales office.
STPS60H100C
Characteristics

1 Characteristics

Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 100 V

IF(RMS) Forward rms current 60 A

Tc = 150 °C Per diode 30


IF(AV) Average forward current, δ = 0.5, square wave A
Tc = 140 °C Per device 60

IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 300 A

PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 1300 W

Tstg Storage temperature range -65 to +175 °C

Tj Maximum operating junction temperature (1) +175 °C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol Parameter Max. value Unit

Per diode 1.0


Rth(j-c) Junction to case °C/W
Total 0.7
Rth(c) Coupling 0.4 °C/W

When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

For more information, please refer to the following application note :


• AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Tj = 25 °C - 2 10 µA
IR (1) Reverse leakage current VR = VRRM
Tj = 125 °C - 3 10 mA

Tj = 25 °C - 0.84
IF = 30 A
Tj = 125 °C - 0.67 0.72
VF (2) Forward voltage drop V
Tj = 25 °C - 0.98
IF = 60 A
Tj = 125 °C - 0.80 0.84

1. Pulse test: tp = 5 ms, δ < 2%


2. Pulse test: tp =380 µs, δ < 2%

To evaluate the conduction losses, use the following equation: P = 0.6 x IF(AV) + 0.004 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode

DS3978 - Rev 3 page 2/9


STPS60H100C
Characteristics (curves)

1.1 Characteristics (curves)

Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient
average forward current (per diode) temperature (δ = 0.5, per diode)

PF(AV)(W) IF(AV) (A)


26 35
δ=0.1 δ=0.2 δ=0.5
24 Rth(j-a)=Rth(j-c)
22 30
δ=0.05 δ=1.0
20
25
18
16
20
14
12
15
10 Rth(j-a)=15°C/W

8 10
T T
6
4 5
T amb (°C)
2 IF(AV) (A)
δ=tp/T tp δ=tp/T tp
0 0

0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175

Figure 3. Normalized avalanche power derating versus Figure 4. Relative variation of thermal impedance junction
pulse duration (Tj= 125 °C) to case versus pulse duration

PARM (t p ) Z th(j-c) / R th(j-c)


PARM (10 µs) 1.0
1
0.9

0.8

0.7
0.1
0.6

0.5

0.4
0.01 0.3

0.2

0.1
Single pulse t p(s)
t p(µs)
0.001 0.0
1 10 100 1000
1.E-03 1.E-02 1.E-01 1.E+00

DS3978 - Rev 3 page 3/9


STPS60H100C
Characteristics (curves)

Figure 5. Reverse leakage current versus reverse voltage Figure 6. Junction capacitance versus reverse voltage
applied (typical values, per diode) applied (typical values, per diode)

I R (mA) C(nF)
1.E+02 10.0
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
1.E+01 Tj = 150 °C

Tj = 125 °C
1.E+00
Tj = 100 °C

1.E-01 1.0
Tj = 75 °C

1.E-02 Tj = 50 °C

1.E-03 Tj = 25 °C

VR(V) VR(V)
1.E-04 0.1
0 10 20 30 40 50 60 70 80 90 100 1 10 100

Figure 7. Forward voltage drop versus forward current (per diode)

IF (A)
100

Tj = 125 °C
(maximum values)

10 Tj = 125 °C
(typical values)

Tj = 25 °C
(maximum values)

VF(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

DS3978 - Rev 3 page 4/9


STPS60H100C
Package information

2 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

2.1 TO-220AB package information


• Epoxy meets UL 94,V0
• Cooling method: by conduction (C)
• Recommended torque value: 0.55 N·m
• Maximum torque value: 0.70 N·m

Figure 8. TO-220AB package outline

DS3978 - Rev 3 page 5/9


STPS60H100C
TO-220AB package information

Table 4. TO-220AB package mechanical data

Dimensions

Ref. Millimeters Inches (for reference only)

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181


b 0.61 0.88 0.240 0.035
b1 1.14 1.55 0.045 0.061
c 0.48 0.70 0.019 0.028
D 15.25 15.75 0.600 0.620
D1 1.27 typ. 0.050 typ.
E 10.00 10.40 0.394 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.195 0.203
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.260
J1 2.40 2.72 0.094 0.107
L 13.00 14.00 0.512 0.551
L1 3.50 3.93 0.138 0.155
L20 16.40 typ. 0.646 typ.
L30 28.90 typ. 1.138 typ.
θP 3.75 3.85 0.148 0.152
Q 2.65 2.95 0.104 0.116

DS3978 - Rev 3 page 6/9


STPS60H100C
Ordering information

3 Ordering information

Table 5. Order code

Order code Marking Package Weight Base qty. Delivery mode

STPS60H100CT STPS60H100CT TO-220AB 1.95 g 50 Tube

DS3978 - Rev 3 page 7/9


STPS60H100C

Revision history

Table 6. Document revision history

Date Revision Changes

02-Aug-2004 1 First issue.


Reformatted to current standards. Added ECOPACK statement on page 5.
07-Feb-2007 2
Corrected typographical errors on pages 1 and 3.
Updated Table 1. Absolute ratings (limiting values per diode at 25 °C, unless
09-Aug-2018 3 otherwise specified) and Figure 3. Normalized avalanche power derating
versus pulse duration (Tj= 125 °C).

DS3978 - Rev 3 page 8/9


STPS60H100C

IMPORTANT NOTICE – PLEASE READ CAREFULLY


STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved

DS3978 - Rev 3 page 9/9

You might also like