Stps 60 H 100 C
Stps 60 H 100 C
Datasheet
A1 Features
K
A2 • High junction temperature capability
• Low leakage current
K • Low thermal resistance
• High frequency operation
• Avalanche capability
• ECOPACK®2 compliant
A2
K
A1 Applications
TO-220AB
• Switching diode
• SMPS
• DC/DC converter
• Telecom power
• Desktop power supply
Description
This dual diode common cathode Schottky rectifier is suited for high frequency
switched mode power supplies.
Packaged in TO-220AB, the STPS60H100C is optimized for use to enhance the
reliability of the application.
Product status
STPS60H100C
Product summary
IF(AV) 2 x 30 A
VRRM 100 V
Tj(max.) 175 °C
VF(typ.) 0.67 V
1 Characteristics
Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Tj = 25 °C - 2 10 µA
IR (1) Reverse leakage current VR = VRRM
Tj = 125 °C - 3 10 mA
Tj = 25 °C - 0.84
IF = 30 A
Tj = 125 °C - 0.67 0.72
VF (2) Forward voltage drop V
Tj = 25 °C - 0.98
IF = 60 A
Tj = 125 °C - 0.80 0.84
To evaluate the conduction losses, use the following equation: P = 0.6 x IF(AV) + 0.004 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient
average forward current (per diode) temperature (δ = 0.5, per diode)
8 10
T T
6
4 5
T amb (°C)
2 IF(AV) (A)
δ=tp/T tp δ=tp/T tp
0 0
Figure 3. Normalized avalanche power derating versus Figure 4. Relative variation of thermal impedance junction
pulse duration (Tj= 125 °C) to case versus pulse duration
0.8
0.7
0.1
0.6
0.5
0.4
0.01 0.3
0.2
0.1
Single pulse t p(s)
t p(µs)
0.001 0.0
1 10 100 1000
1.E-03 1.E-02 1.E-01 1.E+00
Figure 5. Reverse leakage current versus reverse voltage Figure 6. Junction capacitance versus reverse voltage
applied (typical values, per diode) applied (typical values, per diode)
I R (mA) C(nF)
1.E+02 10.0
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
1.E+01 Tj = 150 °C
Tj = 125 °C
1.E+00
Tj = 100 °C
1.E-01 1.0
Tj = 75 °C
1.E-02 Tj = 50 °C
1.E-03 Tj = 25 °C
VR(V) VR(V)
1.E-04 0.1
0 10 20 30 40 50 60 70 80 90 100 1 10 100
IF (A)
100
Tj = 125 °C
(maximum values)
10 Tj = 125 °C
(typical values)
Tj = 25 °C
(maximum values)
VF(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Dimensions
3 Ordering information
Revision history