AO7408

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO7408 uses advanced trench technology to VDS (V) = 20V

provide excellent RDS(ON), low gate charge and ID = 2.2 A (VGS = 4.5V)
operation with gate voltages as low as 1.8V, in the RDS(ON) < 82mΩ (VGS = 4.5V)
small SOT323 footprint. It can be used for a wide RDS(ON) < 95mΩ (VGS = 2.5V)
variety of applications, including load switching, low
RDS(ON) < 120mΩ (VGS = 1.8V)
current inverters and low current DC-DC converters.
Standard Product AO7408 is Pb-free (meets ROHS
& Sony 259 specifications). AO7408L is a Green
Product ordering option. AO7408 and AO7408L are
electrically identical.

SC-70-6 D
(SOT-323)
Top View
D D
D D
G S G
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain TA=25°C 2.2
Current A TA=70°C ID 1.75 A
Pulsed Drain Current B IDM 10
TA=25°C 0.625
PD W
Power Dissipation A TA=70°C 0.4
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 160 200 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 180 220 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 130 160 °C/W

Alpha Omega Semiconductor, Ltd.

AO7408

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 20 V
VDS=16V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±8V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 0.6 0.8 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 10 A
VGS=4.5V, ID=2.2A 67 82
mΩ
TJ=125°C 99 125
RDS(ON) Static Drain-Source On-Resistance
VGS=2.5V, ID=2.0A 78 95 mΩ
VGS=1.8V, ID=1A 96 120 mΩ
gFS Forward Transconductance VDS=5V, ID=1.6A 6.7 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.69 1 V
IS Maximum Body-Diode Continuous Current 0.91 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 499 pF
Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz 65 pF
Crss Reverse Transfer Capacitance 56 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 6.02 nC
Qgs Gate Source Charge VGS=4.5V, VDS=10V, ID=2.2A 0.41 nC
Qgd Gate Drain Charge 1.35 nC
tD(on) Turn-On DelayTime 6.5 ns
tr Turn-On Rise Time VGS=5V, VDS=10V, RL=4.5Ω, 8 ns
tD(off) Turn-Off DelayTime RGEN=6Ω 61 ns
tf Turn-Off Fall Time 16 ns
trr Body Diode Reverse Recovery Time IF=2.2A, dI/dt=100A/µs 23.2 ns
Qrr Body Diode Reverse Recovery Charge IF=2.2A, dI/dt=100A/µs 8.6 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 2 : June 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha Omega Semiconductor, Ltd.

AO7408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

16 10
8V
4.5V VDS=5V
8 25°C
12 125°C
2V

3V 6

ID(A)
ID (A)

8 2.5V

4 VGS=1.5V
2

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

140 1.8
VGS=2.5V
ID=2.0A
Normalized On-Resistance

1.6 VGS=1.8V
120
ID=1.0A
RDS(ON) (mΩ)

VGS=1.8V 1.4 VGS=4.5V

100 ID=2.2A
VGS=2.5V 1.2

80
VGS=4.5V 1

60 0.8
0 2 4 6 8 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

180 1E+01

160 1E+00
ID=2.2A 125°C
140 1E-01
RDS(ON) (mΩ)

IS (A)

120 1E-02
125°C 25°C
100 1E-03

25°C
80 1E-04

60 1E-05
1 2 3 4 5 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha Omega Semiconductor, Ltd.

AO7408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1000

VDS=10V
4 ID=2.2A 800
Ciss

Capacitance (pF)
600
VGS (Volts)

2 400

Coss
200 Crss
1

0 0
0 1 2 3 4 5 6 7 0 5 10 15 20
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
16
TJ(Max)=150°C
100µs TJ(Max)=150°C
TA=25°C
TA=25°C
12
10.0 RDS(ON)
Power (W)
ID (Amps)

10µs
limited
8
10ms 1ms
0.1s
1.0
4

1s
10s DC 0
0.1
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=360°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha Omega Semiconductor, Ltd.