COURSE: Principles of Electronics Engineering

Module 1 PN Junction

1 Explain the formation of Depletion region in unbiased PN 5 CO1

junction?
2 Draw and explain the V-I characteristics of a PN Junction Diode 5 CO1
for forward and reverse bias.
3 In a center tapped full wave rectifier, the RMS secondary voltage 5 CO1
is 20V and load resistance RL = 4kΩ
Find 1) Peak Current (Im)
 Average Load Voltage (VLdc)
 Average Load Current (ILdc)
 Ripple Factor (RF)
 Efficiency of rectification (η)
4 Explain the operation of Centre tapped full wave rectifier with
neat diagram and draw input output waveforms. And derive the
formula for output Voltage and Current.
5 Compare Half wave rectifier, Full wave rectifier and Bridge
rectifier?

6 Explain Full wave bridge Rectifier with the proper input output
wave form. And derive the formula for output Voltage and
Current.
7 A full wave rectifier uses 2 diode, the internal resistance of each
diode may be assumed 20Ω. The transformer r.m.s. secondary
voltage from centre tap to each end of secondary is 50V and load
resistance is 980Ω Find:
 The mean load current
 The r.m.s. value of load current
8 In a half wave rectifier Diode internal resistance r f =20 Ὼ. If the applied voltage is
v=50 sinῳmt and load resistance RL =800Ὼ find,
i)Im, Idc, Irms.
ii) d.c output voltage
iii)Efficiency.

9 In center tap circuit shown in fig(2 diode full wave rectifier) The diodes are
assumed to be ideal, i.e zero internal resistance(forward resistance). Find,
i)d.c. output voltage
ii) peak inverse voltage
iii) rectification efficiency
iv)mean load current and rms load current.

10 A center tap diode full wave rectifier has RL=1kΩ The diodes are assumed to be
ideal, i.e zero internal resistance(forward resistance). Find,____ 6.17 VKM
i)d.c. output voltage
ii) peak inverse voltage
iii) rectification efficiency
iv)mean load current and rms load current.
 Module 2 Bipolar Junction Transistor
CO2
1 Draw and explain Single stage RE bypassed circuit and derive the 10 CO2
equation for voltage gain, Input impedance, Output impedance,
2 Draw input and output VI characteristics of CE configuration and 5 CO2
show region of operations.
3 Compare BJT and JFET.

4 Derive the expression of IB, IC and VCE for a fixed bias circuit
without RE.
5 Derive equation of input resistance (Ri), output resistance (Ro)and CO2 10
voltage gain (Av) for the voltage divider biased BJT circuit
bypassed RE.
6 Explain early effect in BJT?

7 Write short note on DC load line for transistor. 5 CO2

8 Explain Common Emitter configuration of BJT. Draw the input and 5

output characteristics of Common Emitter configuration of BJT.
9 Compare various characteristics of CE, CB, CC configurations 5 CO2
of
transistor amplifier.
10 Calculate the values of three currents in the circuit 5 CO2
shown below
 Find IB, IC, VC, VE and VCE for following circuit β=100.

11
 Derive Ri, RO and AV using Hybrid-π model if β=100.

12

Find IB, IC, VC, VE and VCE for the following circuit β=100.

13
 Find Ri, RO and AV for following circuit.

14

Calculate DC parameters IC and VCE for the given circuit if β=100

and also state in which region the circuit is working. Draw DC load
line.

15 10 CO2

16 Calculate AC parameters AV, Ri and RO for the given circuit 10 CO2

if β = 100, VBE = 0.7V, VT = 26mV and IC = 1.749mA.
17 Determine the Q point of the transistor circuit shown in fig. 5 CO2
Also draw the D.C load line. Given = 200 and VBE=0.7 v

18 Derive Ri, RO and AV using Hybrid-π model if β=100. 10 CO2

19 Determine the Q point values (VCE, and IC) for collector feedback
bias circuit, shown in fig, ____9.22

20 The circuit shown in fig uses silicon transistor having =100. Find
the operating point and and stability factor.
 Note:- More numerical and analysis may ask on 3 types of biasing and ac
analysis CE
amplifier.

Module 3 Field Effect Devices

1 Define pinch off voltage with respect to n-channel JFET. 5 CO3

2 Compare n-channel DMOSFET and n type EMOSFET 5 CO3
3 Draw the construction, VI characteristic and explain operation of 10 CO3
n- channel DMOSFET.
4 Draw the construction, VI characteristic and explain operation of 10 CO3
n- channel EMOSFET.
5 Draw the construction, VI characteristic and explain operation of 10 CO3
n- channel JFET.
6 Explain drain and Transfer characteristics of JFET with 5 CO3
Id Current equation.
7 Explain with construction, working, operation and
characteristic of n-channel JFET.
8 Compare BJT and FET in detail.

Module 4 Introduction of Feedback & Oscillators

1 Explain negative feedback and it’s application. draw any 5 CO4

one negative feedback topologies with the help of neat block
 diagram.
2 Compare 4 topologies of negative feedback 5 CO4
3 Draw the circuit diagram of Colpitts oscillator and explain its 10 CO4
working. Derive the equation for frequency.
4 State and Explain Principle of Oscillation (Barkhausen’s Criteria). 10 CO4
Explain the operation of RC phase shift Oscillator with
suitable diagram and state it’s advantages, disadvantages and
application
5 Explain the operation of Wein bridge Oscillator with suitable 10 CO4
diagram and derive output frequency formula.
6 State and Explain Principle of Oscillation(Barkhausen’s Criteria) 05 CO4
for sustained Oscillation. And list out different types of oscillator
7 Draw and explain crystal oscillator with it’s advantage.

10 CO4

8 Explain the operation of Hartley Oscillator and state it’s 5 CO4

advantages, disadvantages and application.

Module 5 Introduction to operational amplifier:

 1 Draw the voltage follower using op-amp and show that its gain is 5 CO5
unity.
2 Explain virtual short and virtual ground concept in Op-amp. 5 CO5
3 List out all Ideal and practical OP-AMP Parameters. Explain 10 CO5
PSRR,CMRR, Slew rate in detail

4 Draw equivalent circuit and transfer curve for OPAMP 5 CO5

5 Draw and explain Inverting amplifier and non-inverting amplifier 10 CO5

with waveform . Derive the equation for voltage gain of both
6 Explain Op-Amp block diagram in detail with applications. 10 CO5
 7 Derive the equation for a non-inverting amplifier. 5 CO5

8 Draw and explain Op-Amp as an Inverting amplifier and derive 5 CO5

the equation for output voltage.

Module 6 Linear applications of operational amplifier:

Draw and explain summing/adder amplifier, Derive the equation

1 for output voltage.

2 With suitable waveform explain how Op-Amp can be used as 10 CO5

differentiator and also derive the formula for output voltage.
3 Draw and explain Op-Amp as an Adder circuit and derive the 5 CO6
equation for out voltage.
4

5 For the non inverting amplifier shown in below find

i)closed loop voltage gain, …… VKM 25.35
ii)max operating frequency
slew rate is 0.5 mV/µs
6 Calculate the output voltage for the non inverting voltage amplifier

7 Calculate the output voltage for the circuit, the inputs are V1=50
Sin(1000t)mV, V2=10Sin(3000t)mV………VKM 25.49

8 Determine the output voltage for the summing amplifier shown in

below fig,……VKM 25.45
 Determine the lower frequency limit (critical frequency) for the
9 integrator circuit shown below.

Q1

joining n-type material with p-type material causes excess electrons in the n-type material to diffuse to
the p-type side and excess holes from the p-type material to diffuse to the n-type side. Movement of
electrons to the p-type side exposes positive ion cores in the n-type side while movement of holes to the
n-type side exposes negative ion cores in the p-type side, resulting in an electron field at the junction
and forming the depletion region. A voltage results from the electric field formed at the junction.
P-n junctions are formed by joining n-type and p-type semiconductor materials, since the n-type region
has a high electron concentration and the p-type a high hole concentration, electrons diffuse from the n-
type side to the p-type side. Similarly, holes flow by diffusion from the p-type side to the n-type side.

If the electrons and holes were not charged, this diffusion process would continue until the
concentration of electrons and holes on the two sides were the same, as happens if two gasses come
into contact with each other. However, in a p-n junction, when the electrons and holes move to the
other side of the junction, they leave behind exposed charges on dopant atom sites, which are fixed in
the crystal lattice and are unable to move.

On the n-type side, positive ion cores are exposed. On the p-type side, negative ion cores are exposed.
An electric field Ê forms between the positive ion cores in the n-type material and negative ion cores in
the p-type material. This region is called the "depletion region" since the electric field quickly sweeps
free carriers out, hence the region is depleted of free carriers. A "built in" potential Vbi due to Ê is
formed at the junction