FFAF30U20DN
FFAF30U20DN
Features
• Ultrafast with soft recovery
• Low forward voltage
Applications
• Power switching circuits TO-3PF
• Output rectifiers 1 2 3
• Freewheeling diodes
• Switching mode power supply 1. Anode 2.Cathode 3. Anode
Ultrafast Recovery Power Rectifier
Absolute Maximum Ratings (per diode) TC=25°C unless otherwise noted
Symbol Parameter Value Units
VRRM Peak Repetitive Reverse Voltage 200 V
IF(AV) Average Rectified Forward Current @ TC = 100°C 30 A
IFSM Non-repetitive Peak Surge Current 300 A
60Hz Single Half-Sine Wave
TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C
Thermal Characteristics
Symbol Parameter Value Units
RθJC Maximum Thermal Resistance, Junction to Case 1.6 °C/W
Electrical Characteristics (per diode) TC=25 °C unless otherwise noted
Symbol Parameter Min. Typ. Max. Units
VFM * Maximum Instantaneous Forward Voltage V
IF = 30A TC = 25 °C - - 1.2
IF = 30A TC = 100 °C - - 1.0
IRM * Maximum Instantaneous Reverse Current µA
@ rated VR TC = 25 °C - - 30
TC = 100 °C - - 300
trr Maximum Reverse Recovery Time - - 40 ns
Irr Maximum Reverse Recovery Current - - 4.0 A
Qrr Maximum Reverse Recovery Charge - - 80 nC
(IF =30A, di/dt = 200A/µs)
WAVL Avalanche Energy 0.5 - - mJ
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2004 Fairchild Semiconductor Corporation Rev. A, March 2004
FFAF30U20DN
Typical Characteristics
80 1000
o
TC = 100 C
100
Reverse Current , I R [µA]
o
Forward Current , IF [A]
TC = 100 C
10
10
o
TC = 25 C
o
1 TC = 25 C
1 0.1
0.01
0.1 0.001
0.0 0.5 1.0 1.5 2.0 0 50 100 150 200
Forward Voltage , VF [V] Reverse Voltage , VR [V]
Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current
vs. Forward Current vs. Reverse Voltage
1000 50
100
Typical Capacitance I = 30A
at 0V = 856 pF IF F= 10A o
[ns]
45 Tc = 25 o C
Time, t,rrtrr[ns]
800 90 TC = 25 C
Capacitance , Cj [pF]
40
RecoveryTime
80
600
35
ReverseRecovery
70
400
30
60
Reverse
200 25
50
20
40
0.1 1 10 100 100
100 500
500
Reverse Voltage , VR [V] di/dt [A/µµs]s]
di/dt [A/
Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time
vs. di/dt
8 50
Average Forward Current , IF(AV) [A]
IF = 30A
7
Reverse Recovery Current , Irr [A]
o
TC = 25 C
40
6
5 30
DC
20
3
2
10
1
0 0
100 500 60 80 100 120 140 160
di/dt [A/µs] Case Temperature , TC [ C]
o
Figure 5. Typical Reverse Recovery Current Figure 6. Forward Current Derating Curve
vs. di/dt
©2004 Fairchild Semiconductor Corporation Rev. A, March 2004
FFAF30U20DN
©2004 Fairchild Semiconductor Corporation Rev. A, March 2004
FFAF30U20DN
Package Dimensions
TO-3PF
5.50 ±0.20
3.00 ±0.20
4.50 ±0.20
15.50 ±0.20 ø3.60 ±0.20
(1.50)
10.00 ±0.20
°
10
23.00 ±0.20
26.50 ±0.20
22.00 ±0.20
0.85 ±0.03
14.50 ±0.20
16.50 ±0.20
16.50 ±0.20
1.50 ±0.20
2.00 ±0.20
2.50 ±0.20
2.00 ±0.20
2.00 ±0.20 2.00 ±0.20 2.00 ±0.20
14.80 ±0.20
4.00 ±0.20
+0.20
3.30 ±0.20
0.75 –0.10
5.45TYP 5.45TYP +0.20
[5.45 ±0.30] [5.45 ±0.30] 0.90 –0.10
5.50 ±0.20
3.30 ±0.20
2.00 ±0.20
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation Rev. A, March 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ ISOPLANAR™ POP™ Stealth™
ActiveArray™ FAST LittleFET™ Power247™ SuperFET™
Bottomless™ FASTr™ MICROCOUPLER™ PowerSaver™ SuperSOT™-3
CoolFET™ FPS™ MicroFET™ PowerTrench SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET SuperSOT™-8
DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic
E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TINYOPTO™
EnSigna™ I2C™ OCX™ RapidConfigure™ TruTranslation™
FACT™ ImpliedDisconnect™ OCXPro™ RapidConnect™ UHC™
Across the board. Around the world.™ OPTOLOGIC SILENT SWITCHER UltraFET
The Power Franchise OPTOPLANAR™ SMART START™ VCX™
Programmable Active Droop™ PACMAN™ SPM™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I9
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
