: ) — 1

SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

INDUSTRIAL APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm

FEATURES ia3MAX.
)Zf3.2i 0.2
. Low Collector Saturation Voltage 1*

t
V C E(sat)=-0.4V(Max.) (at I C =-3A)
1
:
CO
7^ '

C5
. High Speed Switching Time : t s tg=1.0/is(Typ. +i
o
Complementary to 2SC3239
X
<
s
1 +1
o
. H
to
irf.

1 T" t

55
L. 1.2
\ S
1.4
MAXIMUM RATINGS (Ta=25 c) + 0.25 1

H
o.7e -ai5
CHARACTERISTIC SYMBOL RATING UNIT i

2.54 ± a 25 M
2.54±0.85
Collector-Base Voltage VCBO -60

Collector-Emitter Voltage VCEO -50 C5d

+ 1

Emitter-Base Voltage VEBO -5 =

€I]Blz:_.
Collector Current ic
Base Current IB -1 1. BASE
2. COLLECTOR (HEAT SINK)
Collector Power Dissipation 3. EMITTER
25
(Tc=25°C)
JEDEC
Junction Temperature 150
Storage Temperature Range T stg -55-150 TOSHIBA 2-10K1A
Weight : 2. 0g
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current ICBO V C B=-50V, I E =0 - - -1 dk

Emitter Cut-off Current V E B=-5V, I C =0 - - -1 fik
lEBO
Collector-Emitter - -
V (BR) CEO I c =-10mA, Ib=0 -50 V
Breakdown Voltage
h FE(l) -
(Note)
V CE =-1V, Ic— 1A 70 240
DC Current Gain
h FE(2) V C E=-1V, Ic=-3A 30 - -

Collector-Emitter v CE(sat) IC=-3A, Ib=-0.15A - -0.2 -0.4

Saturation
- V
Voltage Base-Emitter VBE(sat) IC=-3A, Ib=-0.15A -0.9 -1.2

Transition Frequency fT V C E=-4V, I C =-1A - 60 - MHz

Collector Output Capacitance Cob Vcb=-10V, Ie=0, f=lMHz - 170 -
PF

Turn-on Time ton KJIB2 lR2 ^OUTPUT - 0.1 -

JbiII o *^-PT ) I „ :

T^ INPUT -T~
1

J B1 ^T i£ - -
Switching Time Storage Time tstg 20fi 8 |° 1 1.0 ft s

-IB1=IB 8 =015A
Fall Time uu y - 0.1 -
tf DUTY CYCLE <^1%

Note : hFE(l) Classification : 70-140, Y : 120-240

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219-
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2SA1279

ic — VCE vc E "-
ic
-10
COMMON EMITTER COMMON EMITTER
Tc = 2 5'C Tc = 2 5'C

-80 < col —

I
hs°/ h
o/
1

S 1
j ;
-70 o x -300-
-60 -350 •

-50 II

m
-40 v-t -400
-30 -500'
-2 —20
I B=~ 10mA
o 1
-1 -2 -3 -4 -5 -6
)
—< -4 -6 -8t -1
1 I

-1 3 -1'
COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT I C ( A)
VCE (V)

V CE — ic V CE - IC
1.0
COMMON EMITTER COMMON EMITTER
Tc = 100'C Tc=-5 5'C
n r £? -0.8
/ o / b/ o/b/r.
. 1 o — o - °I §1 - *§/o°
S <o
S > n« o It '/ _/)
r
/
f/ft
<
a 1
1
'/ rl ryjy
-350 o
M O
N
II
/ -400
PC a > -300
a4 /J
II

PQ
'
-500 M -400
-500
-0.2

n
-1 -2 -3 -4 -5 -6 -7 -1 -2 -3 -4 -5 -6
COLLECTOR CURRENT I c (A) COLLECTOR CURRENT Ic (a)

h FE — IC V E(sa t) - ic
-3
COMMON EMITTER COMMON EMITTER
500 V CB —IV «
I C /I B =20
300 D'-n —
10 0"C
" -0.5
25
1—1—'
--
<
\
=^ t -a3
-55 _
^ 4 <V^ \

« Tc = 100°C ^.
* O -Ql
o e>
H<
hH l-P
25
oo oz
10 -ao3
-a 03 — ai
i

-1
-0.3 -3 -ai -Q3
-1 —3
COLLECTOR CURRENT Ic (a) COLLECTOR CURRENT Ic (A)

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-220-
 '

2SA1279

v BE(sat) - Ic VBE
( 30MM0N EMITTER COMMON
[
C /I B = 20 EMITTER
i V C E- IV

-1 Tc = -5 5*C
ffi PQ
H >
H i

M
E-i

-0.5
o / *° m
ah . o
^ <3
\\ 25 S 1

<
I
-0.3 \,
x
1()0
CO hJ
<o
m >
7'
-ai / /
-ai -a3 -l -3
COLLECTOR CURRENT
7 /, /
(A) -Q4 -0.8 -1.2 -1.6 -2.0
BASE-EMITTER VOLTAGE V BE (V)

Pc - - Ta SAFE OPERATING AREA

28
CD Tc = Ta
-CD .
INFINITE HEAT SINK
(2) 200X200X2mmAi'
HEAT SINK - Ic MAX (PULSED;*
@ 100X100X2mmA^ 1

-
IG MAX ^
\
20 '<& HEAT SINK s

© 5 0X50X2mmA^
HEAT SINK
(CONTINUOUS)
V
N

^V\o\ \
16 © NO HEAT SINK ^
12
© y
n \ ^

J Vs
8 -0.5 "3(- SINGLE NONREPETI—
"S
TIVE PULSED Tc = 25"C ^
-0.3 <X
CURVES MUST BE DERATED s
4
O
©- "
'

LINEARI Y W r INCREASE m
IN T EMI EFLA nJ RE
D o
>
°(
4 8 1J20 ie 2C)0 24 28 -ai ,J_l...
)
-l -3 -10 -30 -100
CC) COLLECTOR-EMITTER VOLTAGE 'CE (V)

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CORPORATION
-221-