Experiment 08
Experiment 08
08:
Title: Introduction to BJT (Bipolar Junction Transistor).
Objective:
1. To know about characteristics of BJT.
2. To know different types and configuration .
Theory:
It is an electronic component mainly used for amplification and switching purpose.
As the name suggests, it is composed of two junctions called emitter- base junction and
collector-base junction. It is composed of three terminals called emitter, base and collector
denoted as E, B and C respectively.
This transistor comes with two PN junctions. The PN junction exists between
emitter and base is called emitter-base junction and the PN junction exists between collector
and base is called collector-base junction. Emitter-base junction is forward biased and the
collector-base junction is reverse biased.
BJT is called a current controlled device where small current at the base side is
used to control the large current at other terminals. All three terminals of the BJT are
different in terms of their doping concentrations. The emitter is highly doped as compared to
base and collector. The collector is moderately doped and its area is larger as compared to
emitter area, allowing it to handle more power. The base is very thin and lightly doped.
Types of BJT:
NPN Transistor:
NPN (negative-positive-negative) is a type of BJT where a P-doped layer of
semiconductor exists between the two layers of N doped material. The P doped region
represents the base of the transistors while other two layers represent emitter and collector
respectively.
Prepared By
Md. Sabbir Hasan Sohag
PNP Transistor:
PNP (positive-negative-positive) transistor is a type of BJT where N doped
semiconductor layer which acts as a base, is housed between the two layers of P doped
material. The base uses small base current and negative base voltage to control large current
at the emitter and collector side and voltage at the collector side is larger than the voltage at
the base side.
Modes of BJT:
Saturation
BJT exhibits saturation mode when both junctions are forward biased. This mode of
operation is referred as a closed circuit which allows a large amount of current flowing
from emitter to collector side.
Cut-off
Prepared By
Md. Sabbir Hasan Sohag
When the emitter-base junction is not forward biased, the transistor is said to have in the
cut-off region where collector current and base current will be zero, no matter how much
voltage is applied at the base terminal.
Basic Configuration:
BJT is a current controlled device which is mainly used for amplification and
switching purpose. There are three ways to connect this device with external electronic
circuits called:
1. Common Base Configuration
2. Common Collector Configuration
3. Common Emitter Configuration
The nature of the current being controlled at the output is different for different
configurations.
Prepared By
Md. Sabbir Hasan Sohag
This configuration is mainly used for impedance matching as the input impedance of this
configuration is very high while output impedance is very low.
Common collector configuration is termed as non-inverting amplifier where output signal
and an input signal are in phase with each other.
The current gain of this transistor is very large because the load resistance is at the
receiving end of both collector current and base current, making it a suitable for amplify
purpose.
Prepared By
Md. Sabbir Hasan Sohag
Application:
BJTs come with two major applications called amplification and switching.
They are the building blocks of most of the electronic circuits, especially where audio,
current or voltage amplification is required.
NPN transistors are preferred over PNP transistors for amplification purpose because
conduction carried out through mobility of electrons is better than conduction through
mobility of holes.
Report Writing:
1. What are the region of operation of BJT?
2. What are the configurations of BJT ?
3. What are the current and power gain for different configuration of BJT?
Prepared By
Md. Sabbir Hasan Sohag