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D 250 V Phototriac Driver Output MOC30209– MOC3012 . . . PACKAGE

D
(TOP VIEW)
Gallium-Arsenide-Diode Infrared Source
and Optically Coupled Silicon Traic Driver ANODE 1 6 MAIN TERM
(Bilateral Switch)
CATHODE 2 5 TRIAC SUB†
D UL Recognized . . . File Number E65085 NC 3 4 MAIN TERM
D High Isolation . . . 7500 V Peak
D Output Driver Designed for 115 Vac
† Do not connect this terminal
NC – No internal connection
D Standard 6-Pin Plastic DIP
D Directly Interchangeable with Motorola logic diagram
MOC3009, MOC3010, MOC3011, and
MOC3012 1 6

typical 115 Vac(rms) applications

D Solenoid/Valve Controls 2 4

D Lamp Ballasts
D Interfacing Microprocessors to 115-Vac
Peripherals
D Motor Controls
D Incandescent Lamp Dimmers
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)†
Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . 7.5 kV
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V
Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Output repetitive peak off-state voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 V
Output on-state current, total rms value (50-60 Hz, full sine wave): TA = 25°C . . . . . . . . . . . . . . . . . . . 100 mA
TA = 70°C . . . . . . . . . . . . . . . . . . . . 50 mA
Output driver nonrepetitive peak on-state current (tw = 10 ms, duty cycle = 10%, see Figure 7) . . . . . 1.2 A
Continuous power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Phototriac (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Total device (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330 mW
Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 100°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Lead temperature 1,6 (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 4.4 mW/°C.

PRODUCTION DATA information is current as of publication date. Copyright  1998, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

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MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998

electrical characteristics at 25°C free-air temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IR Static reverse current VR = 3 V 0.05 100 µA
VF Static forward voltage IF = 10 mA 1.2 1.5 V
IDRM Repetitive off-state current, either direction VDRM = 250 V, See Note 5 10 100 nA
dv/dt Critical rate of rise of off-state voltage See Figure 1 12 V/µs
dv/dt(c) Critical rate of rise of commutating voltage IO = 15 mA, See Figure 1 0.15 V/µs
MOC3009 15 30
Input trigger
gg current,, either MOC3010 8 15
IFT Output supply voltage = 3 V mA
direction MOC3011 5 10
MOC3012 5
VTM Peak on-state voltage, either direction ITM = 100 mA 1.8 3 V
IH Holding current, either direction 100 µA
NOTE 5: Test voltage must be applied within dv/dt rating.

PARAMETER MEASUREMENT INFORMATION

VCC

1 6

Vin = 30 Vrms

2 4

10 kΩ
Input 2N3904
(see Note A)

NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input at 0 V. The frequency of Vin is increased until the
phototriac just turns on. This frequency is then used to calculate the dv/dt according to the formula:

ń + 2 Ǹ2 πfVin
dv dt

The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-V pulses to the input and increasing
the frequency of Vin until the phototriac stays on (latches) after the input pulse has ceased. With no further input pulses, the
frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then be used
to calculate the dv/dt(c) according to the formula shown above.

Figure 1. Critical Rate of Rise Test Circuit

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TYPICAL CHARACTERISTICS

EMITTING-DIODE TRIGGER CURRENT (NORMALIZED)

vs
FREE-AIR TEMPERATURE ON-STATE CHARACTERISTICS
1.4 800
Output tw = 80 µs
Emitting-Diode Trigger Current (Normalized)

IF = 20 mA
600
f = 60 Hz

I TM – Peak On-State Current – mA

1.3
TA = 25°C
400

1.2
200

1.1 0

– 200
1
– 400

0.9
– 600

0.8 – 800
– 50 – 25 0 25 50 75 100 –3 –2 –1 0 1 2 3
TA Free-Air Temperature – °C VTM – Peak On-State Voltage – V

Figure 2 Figure 3

CRITICAL RATE OF RISE OF OUTPUT VOLTAGE CRITICAL RATE OF RISE OF OUTPUT VOLTAGE
OFF-STATE dv/dt AND COMMUTATING dv/dt(c) OFF-STATE dv/dt AND COMMUTATING dv/dt(c)
vs vs
LOAD RESISTANCE FREE-AIR TEMPERATURE
14 0.24 12 0.24
dv/dt
TA = 25°C dv/dt(c)
See Figure 1
Off-State 10 0.2
12 0.20
Commutating dv/dt – V/ µ s

Commutating dv/dt – V/ µ s
Off-State dv/dt – V/µ s
Off-State dv/dt – V/µ s

8 0.16
10 0.16
6 0.12
Commutating
8 0.12
4 0.08
RL = 510 Ω
RL = 2 kΩ
6 0.08 2 0.04
dv/dt
dv/dt(c)
4 0.04 0 0
0 0.4 0.8 1.2 1.6 2 25 50 75 100
RL – Load Resistance – kΩ TA – Free-Air Temperature – °C

Figure 4 Figure 5

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TYPICAL CHARACTERISTICS

RMS APPLIED VOLTAGE

(FOR dv/dt(c) = 0.15 V/µs)
vs NONREPETITIVE PEAK ON-STATE CURRENT
FREQUENCY vs
PULSE DURATION
1000
3

I TSM – Nonrepetitive Peak On-State Current – mA

RL = 1 kΩ
TA = 25°C TA = 25°C
400
dv/dt = 2 √ 2πf VI
V I – RMS Applied Voltage – V

See Figure 1
100 2

40

dv/dt = 0.15 V/µs

10 1

1
100 400 1k 4k 10 k 40 k 100 k 0
0.01 0.1 1 10 100
f – Frequency – Hz
tw – Pulse Duration – ms
Figure 6 Figure 7

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APPLICATIONS INFORMATION

MOC3009, MOC3012 RL
Rin 180 Ω
1 6
VCC

120 V, 60 Hz

2 4

Figure 8. Resistive Load

MOC3009, MOC3012 ZL
Rin 180 Ω 2.4 kΩ
1 6
VCC

0.1 µF 120 V, 60 Hz

2 4

IGT ≤ 15 mA

Figure 9. Inductive Load With Sensitive-Gate Triac

MOC3009, MOC3012 ZL
Rin 180 Ω 1.2 kΩ
1 6
VCC

0.2 µF 120 V, 60 Hz

2 4

15 mA < IGT < 50 mA

Figure 10. Inductive Load With Nonsensitive-Gate Triac

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MECHANICAL INFORMATION

Each device consists of a gallium-arsenide infrared-emitting diode optically coupled to a silicon phototriac mounted
on a 6-terminal lead frame encapsulated within an electrically nonconductive plastic compound. The case can
withstand soldering temperature with no deformation and device performance characteristics remain stable when
operated in high-humidity conditions.
9,40 (0.370)
8,38 (0.330) 6 5 4

Index Dot
(see Note B)

C
L C
L 1 2 3
7,62 (0.300) T.P.
(see Note A)
1,78 (0.070)
6,61 (0.260) 5,46 (0.215)
0,51 (0.020) 1,78 (0.070) MAX
6,09 (0.240) 2,95 (0.116)
6 Places

Seating Plane
105°
1,01 (0.040) MIN
90°
2,29 (0.090) 0,534 (0.021)
3,81 (0.150)
0,305 (0.012) 1,27 (0.050)
3,17 (0.125) 0,381 (0.015)
0,203 (0.008) 4 Places 6 Places
2,54 (0.100) T.P.
(see Note A)
NOTES: A. Leads are within 0,13 mm (0.005 inch) radius of true position (T.P.) with maximum material condition and unit installed.
B. Pin 1 identified by index dot.
C. The dimensions given fall within JEDEC MO-001 AM dimensions.
D. All linear dimensions are given in millimeters and parenthetically given in inches.

Figure 11. Packaging Specifications

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IMPORTANT NOTICE

Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.

CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF

DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.

In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.

Copyright  1998, Texas Instruments Incorporated

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