ECE5720 Notes07
ECE5720 Notes07
■ The big pink elephant in the room that few people talk about is the
way that power estimates are presently calculated.
■ The premise behind these methods is that voltage limits must never
be violated.
■ But why? The real issue is cell degradation. The assumption is that:
! If voltage limits are violated, then the cell will degrade quickly;
! If limits are properly maintained, the cell will have a long and
productive and happy life.
■ But, in fact, voltage limits may be violated for a short time in some
situations without causing any faster aging.
■ And, “normal” voltages may also cause fast degradation in some
situations—particularly for an aged cell.
■ So, real issue is not cell voltage but rather rate of aging/degradation.
■ Cell power limits should really be calculated to more directly optimize
a tradeoff between performance delivered by the cell and the rate of
incremental degradation experienced by the cell.
■ To be able to do this, we must be able to:
Original model
1
Adapted from, Randall, A.V., Perkins, R.D., Zhou, X., Plett, G.L., “Controls Oriented
Reduced Order Modeling of SEI Layer Growth,” Journal of Power Sources, Vol. 209,
July 2012, pp. 282–288.
jtotal D j C js ,
where RSEI is the initial film resistance that is produced during the
formation period of the cell, and %P [S m#1] is the conductivity of the
film.
■ In addition to the resistance change, there is a capacity loss caused
by the side reaction current during charge, leading to capacity
changing via the relationship
Z Ln
@Q
D anAFjs dx.
@t 0
where:
' (! #iapp !!
i0;s F Usref
# Unref an Voln
C Fjs
D# exp exp asinh .
F 2RT 2i0
■ We’ll see how to solve this equation for js shortly.
■ Once we have solved for js it can then be incorporated into
incremental equations for film resistance and capacity loss.
■ It is assumed that js is constant over some small time interval &t, and
is denoted as js;k for the kth interval.
■ We can convert the continuous-time film thickness relationship to
discrete time as:
c 2013, 2015, Gregory L. Plett
Lecture notes prepared by Dr. Gregory L. Plett. Copyright "
ECE5720, Physics-Based Optimal Controls 7–11
@ıfilm MP
D# js
@t $P
MP &t
ıfilm;k D ıfilm;k#1 # js;k#1,
$P
noting that the sign of js is negative.
■ This result can be used to calculate the film resistance as
' 2 (
# js;k .1 # CA/2 # 2AB.1 # CA/js;k C A2B 2 .
■ Collecting like terms
' ( 2 ' (
0 D A2C 2 # .1 # CA/2 js;k C 2A2BC C 2AB.1 # CA/ js;k
' 2 2 (
C A B CA #A B .
2 2 2
■ Key point: This is a quadratic, so we can easily solve for the root(s)
using the quadratic formula:
p
#2AB ˙ 4A2B 2 # 4A2.2CA # 1/
js;k D
2.2CA # 1/
p
AB ˙ A B 2 C .1 # 2CA/
D .
.1 # 2CA/
■ But, which root to use? The Routh test gives us some guidance:
−0.24
−3
t D 0:5 s. −0.25
−0.255
■ The figure shows the raw output −0.26
0 0.2 0.4 0.6 0.8 1
of the simulation, as compared Time (s)
to the ROM.
■ Both the PDE and ROM solutions have a non-zero negative side
Js,err%
■ Between 10 % and 90 % SOC 0.5
(e.g., typical extremum 0 3C
operating conditions for EV 100 2C
75 ent
50 1C c urr
cells), the maximum relative SOC (%25 0 harg
e
)
error was 0:44 %. C
3C ra
−3
−0.4 te −0.4
−0.6 −0.6
s
−0.8
−0.8
PDE 100%
−1 ROM SOC
−1
0 20 40 60 80 100 0C 0.5C 1C 1.5C 2C 2.5C 3C
State of Charge (%) Charge rate
10
worst at low temperatures and 25°C
5 5°C
J
J (mA cm−3)
2000 s
prolonged constant-current −0.4
s
−0.6 3000 s
1D PDE computation of J
experienced when a cell is −0.8
s
Avg. over width of PDE computation of Js
being charged.
ROM computation of average Js
−1
0 0.2 0.4 0.6 0.8 1
Dimensionless distance across anode
■ The PDE is simulated for 3 000 s, starting with the cell at rest at 10 %
SOC, and 1D profiles of js .x/ across the negative electrode are
plotted at time steps 100 s; 1 000 s, 2 000 s, and 3 000 s.
■ Overlaid on the plot are the average js values predicted by the ROM
at that SOC level, and the actual averaged js values (averaged over
the 1D electrode) from the PDE solution.
■ In the ROM simulation, the SOC is updated on a second-by-second
basis to achieve the present SOC at every point, which is used to
compute the value of js using the method explained herein.
■ We see that even over prolonged constant-current charge profiles,
the ROM is accurate, indicating that assumption 1 of ROM is a
reasonable assumption to make.
! A sudden pulse of current was then applied, and the resulting jNs
from the PDE model, averaged over a one-second interval
subsequent to the pulse, was compared to the computed jNs from
the ROM.
■ To simulate the PDE model, we used COMSOL Multiphysics 3.5a
coupled with a MATLAB script to cycle through the series of
simulations and analyze results.
■ Specifically, each simulation comprised a 1:2 s time interval, where
the cell current iapp was modeled as a step function, which was
applied at t D 0:2 s.
■ We found that the initial rest interval facilitated convergence of the
solution by allowing the PDE solver to adjust its initial conditions
before applying the step current.
■ We found that the adjustable tuning factor ˇ D 1:7 worked well (this
implies the change in electrolyte concentration near the separator
changes nearly twice as quickly as it does near the current collector).
■ A total of 10 100 simulations were run.
Overpotential η (mV)
for this cell model, where x D 0
s
0
is adjacent to the
−10
current-collector and x D 85 (m
−20
is adjacent to the separator,
immediately following the onset
−30
0 10 20 30 40 50 60 70 80
Anode location (µm)
of a charge current pulse.
■ From the PDE result, we expect lithium deposit to occur between
0
PDE
deposition for the PDE and ROM
−50
ROM solutions.
−100
the 1 s interval.
■ The figures below illustrate the predicted overcharge rates over all
! Cross sections through both the PDE and ROM solution spaces
are plotted and compared.
Instantaneous degradation rate as function of SOC Instantaneous degradation rate as function of current
0 0
)
Overcharge js (mA cm )
−3
−3
−100 −100
Overcharge j (mA cm
■ The left figure shows how the two methods compare where each pair
of lines represents a specific charge rate.
■ Finally, the figures below illustrate the error between the PDE and
ROM solutions in two ways.
50
■ The left frame shows the regions where the two methods agree on
whether lithium deposition will occur, and the region where they
disagree.
! This allows the maximum charge rate at any point in time, while
causing no lithium plating.
■ In comparison, a time-optimal charger, based only on the ROM model
of lithium deposition, would select charge pulse current to follow the
lower contour in the figure.
! The speedup of ROM vs. PDE can be much greater than 5 000 W 1 if
ROM solutions are pre-computed and stored in a table.
! Then, “computing” any value of jNs;ROM would be nearly
instantaneous, via table lookup.
■ We note that the ROM solution changes as the film resistance
changes, but the film resistance changes very slowly.
■ The entire table might be updated by the battery management system
once per operational period (e.g., once per day), and then utilized
throughout that operational period for significant performance gains.
Two problems
■ There are (at least) two controls problems to consider.3
■ For EV/E-REV/PHEV, the battery pack is charged from an external
source:
3
A third, well beyond our scope here: Considering xEV as storage units for the “smart
grid,” when does it make sense to “lend” energy to the grid? What should be the rental
fee charged for allowing energy to be borrowed?
for user-specified f .x/, c.x/, ceq .x/, A, b, Aeq , beq , lb, and ub.
■ We will choose x to be a vector of cell applied current versus time,
f .x/ to be some estimate of the cell degradation that would be
caused by that applied current, and the other functions and matrices
to make the problem work.
&t
.CV/.´min # ´0 / ' # .LT/ x
Q
Q
.LT/ x ' .CV/.´0 # ´min/.
&t
■ Similarly, ´ ' ´
k max can be written as
Q
#.LT/x ' .CV/.´max # ´0 /.
&t
■ Putting the last two constraints together gives
" # " #
LT Q .CV/.´0 # ´min/
x' .
#LT &t .CV/.´max # ´0 /
„ ƒ‚ … „ ƒ‚ …
A b
■ The constraints on input current can be satisfied by setting
lb D #Imax.CV/; and ub D Imax.CV/.
■ Then, all that’s left is to specify the cost function f .x/. (There are no
nonlinear constraints in this problem.)
■ Given what we’ve seen so far, we might consider js to represent the
SEI growth model, or the overcharge model, or the sum of both.
Strategy for SEI cost function Strategy for SEI cost function
100
z0 = 90% z0 = 90%
6C
z0 = 70% z0 = 70%
80
z0 = 50% z0 = 50%
4C
z = 30% z = 30%
SOC (%)
0 60 0
Rate
2C z0 = 10% z0 = 10%
40
0
20
−2C
0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Time (min) Time (min)
SOC (%)
60
Rate
2C z = 10% z = 10%
0 0
40
0
20
−2C
0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Time (min) Time (min)
function. −2
Optimization method
−4
■
■ The cell was at an initial SOC of 50 %, then was allowed 15, 30, 45,
60, 75, 90, 105, or 120 minutes to charge to 90 %.
■ Strategies using the SEI cost function and the combined SEI plus
overcharge cost function are shown.
80 80
SOC (%)
SOC (%)
60 60
40 40
20 20
0 0
0 15 30 45 60 75 90 105 120 0 15 30 45 60 75 90 105 120
Time (min) Time (min)
yk D C xk C Duk ,
! That is, yk may be different from the normal system outputs that
we have called yk in the past.
# U T ˆT QRs C U T ˆT QF xk C U T ˆT QˆU C U T RU .
■ To simplify this, note that each term is a scalar, and hence equal to its
own transpose:
J D ŒRsT QRs # 2RsT QF xk C xkT F T QF xk ) (not a function of U )
C U T ŒˆT Qˆ C R)U .
■ Let,
c 2013, 2015, Gregory L. Plett
Lecture notes prepared by Dr. Gregory L. Plett. Copyright "
ECE5720, Physics-Based Optimal Controls 7–44
H D 2ŒˆT Qˆ C R)
■ Then,
1
J D U T H U C f T U C constant.
2
■ Further, we can put constraints on Y via