AO4807

30V Dual P-Channel MOSFET

General Description Product Summary

The AO4807 uses advanced trench technology to provide VDS -30V

excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -6A
device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V) < 35mΩ
applications.
RDS(ON) (at VGS = -4.5V) < 58mΩ

100% UIS Tested

100% Rg Tested

SOIC-8
D1 D2
Top View Bottom
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G1 G2
S1 S2
Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C -6
ID
Current TA=70°C -5 A
C
Pulsed Drain Current IDM -30
Avalanche Current C IAS, IAR 23 A
Avalanche energy L=0.1mH C EAS, EAR 26 mJ
TA=25°C 2
PD W
Power Dissipation B TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W

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 AO4807

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 -1.85 -2.4 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -30 A
VGS=-10V, ID=-6A 21 35
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 31.5 45
VGS=-4.5V, ID=-5A 33 58 mΩ
gFS Forward Transconductance VDS=-5V, ID=-6A 19 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.8 -1 V
IS Maximum Body-Diode Continuous Current -3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 760 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 140 pF
Crss Reverse Transfer Capacitance 95 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.5 3.2 5.0 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13.6 16 nC
Qg(4.5V) Total Gate Charge 6.7 8 nC
VGS=-10V, VDS=-15V, ID=-6A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 8 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=2.7Ω, 6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 5 ns
trr Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 15 ns
Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 9.7 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO4807

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 30
-10V -6V -5V -4.5V VDS=-5V
35
25
30
-4V 20
25

-ID(A)
-ID (A)

20 15

15 -3.5V 10
10
125°C 25°C
5
5 VGS=-3V

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

50 1.8
45 Normalized On-Resistance VGS=-10V
1.6 ID=-6A
40 VGS=-4.5V
Ω)

35
RDS(ON) (mΩ

1.4
17
30
5
VGS=-4.5V
1.2
25 ID=-5A2
20 10
1
15 VGS=-10V

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction
18Temperature
Voltage (Note E) (Note E)

80 1.0E+02
ID=-6A
1.0E+01
60 40
1.0E+00
125°C
25°C
Ω)
RDS(ON) (mΩ

1.0E-01
-IS (A)

40 125°C
1.0E-02

1.0E-03
20
1.0E-04
25°C

0 1.0E-05

2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4807

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=-15V
ID=-6A 1000
8
Ciss

Capacitance (pF)
800
-VGS (Volts)

6
600

4
400 Coss

2
200

Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
100.0
-IAR (A) Peak Avalanche Current

10µs
TA=25°C 10.0 RDS(ON)
TA=150°C limited
100µs
-ID (Amps)

1.0 1ms
TA=100°C
10ms
0.1
TJ(Max)=150°C
TA=125°C 10s
TA=25°C DC

10.0 0.0

1 10 100 1000 0.01 0.1 1 10 100

µs)
Time in avalanche, tA (µ -VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note C) Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

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 AO4807

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4807

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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