Ao4807 2
Ao4807 2
SOIC-8
D1 D2
Top View Bottom
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G1 G2
S1 S2
Pin1
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
40 30
-10V -6V -5V -4.5V VDS=-5V
35
25
30
-4V 20
25
-ID(A)
-ID (A)
20 15
15 -3.5V 10
10
125°C 25°C
5
5 VGS=-3V
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
50 1.8
45 Normalized On-Resistance VGS=-10V
1.6 ID=-6A
40 VGS=-4.5V
Ω)
35
RDS(ON) (mΩ
1.4
17
30
5
VGS=-4.5V
1.2
25 ID=-5A2
20 10
1
15 VGS=-10V
10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction
18Temperature
Voltage (Note E) (Note E)
80 1.0E+02
ID=-6A
1.0E+01
60 40
1.0E+00
125°C
25°C
Ω)
RDS(ON) (mΩ
1.0E-01
-IS (A)
40 125°C
1.0E-02
1.0E-03
20
1.0E-04
25°C
0 1.0E-05
10 1200
VDS=-15V
ID=-6A 1000
8
Ciss
Capacitance (pF)
800
-VGS (Volts)
6
600
4
400 Coss
2
200
Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
100.0
-IAR (A) Peak Avalanche Current
10µs
TA=25°C 10.0 RDS(ON)
TA=150°C limited
100µs
-ID (Amps)
1.0 1ms
TA=100°C
10ms
0.1
TJ(Max)=150°C
TA=125°C 10s
TA=25°C DC
10.0 0.0
10000
TA=25°C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
10
D=Ton/T In descending order
Zθ JA Normalized Transient
1 RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Ig
Charge
td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+
Vgs 10%
Vds
Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds