ELL 100 - Introduction to Electrical Engineering

LECTURE 25:
BIPOLAR JUNCTION TRANSISTOR (BJT)
http://web.iitd.ac.in/~vivekv/ELL100/

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Numerical on DC/AC load lines
for BJT amplifier

2
Q: Consider the common emitter amplifier shown. A 2.2 kΩ resistive load is connected
across the output terminals, and an a.c. signal source of 0.6 V peak and internal
resistance 10 kΩ is connected to the input terminals. The effective input resistance of
the transistor is 2.7 kΩ. Determine the current, voltage and power gains of the stage.
The transistor characteristics and relevant load lines are shown in the next slide.
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Solution: First determine the extremities of the
d.c. load line:
If IC = 0 then VCE = 12 V
If VCE = 0 then IC = 12/1.8 = 6.7 mA

The quiescent base current is IBQ ~ 12/200 mA

= 0.06 mA = 60 μA

v 1.8  2.2
For the a.c load line, RP    1k
I 1.8  2.2
The slope of the a.c. load line is −1/RP = −1.0 mA/V
through point A, which is given by the intersection
of the IB = 60 μA line and the d.c. load line.
For the a.c. signal, the effective input
resistance is 2.7 || 200 kΩ ~ 2.7 kΩ

The peak a.c. base current Ibm is

0.6
 47  A
10  2.7  10 3

Hence the maximum base current is

IBQ + Ibm = 60  47  107  A

and the minimum base current is

IBQ − Ibm = 60  47  13 A
From the a.c. load line, ic  5.1  0.9  4.22mA

This change in collector current is

shared between the 1.8 kΩ collector
resistor and the 2.2 kΩ load resistor.
Hence the change in output current is
1.8 103
io  4.2   1.9mA
1.8  2.2  10 3

Δic
The change in input current is
ii  107  13  94  A
io
=> Current gain Gi   20
ii
The change in output voltage is
vo  vce  8.5  4.3  4.2V pk  pk

The change in input voltage Δvi is

given by the change in base–emitter
voltage,
(94×10-6)(2.7×103)

v0 4.2
Voltage gain: Gv    17
vi 0.25
Δvce
Power gain:
GP  Gv Gi  17  20  340
Hybrid (h) parameters
for a transistor

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 HYBRID PARAMETERS OF BJT

 For small a.c. signals, the transistor behaves as a linear

device because the output a.c. signal is directly proportional
to the input a.c. signal.

 Under such circumstances, the a.c. operation of the transistor

can be described in terms of h-parameters.

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HYBRID PARAMETERS OF BJT

v1  h11i1  h12 v 2
i 2  h 21i1  h 22 v 2

Transistor Amplifier Circuit

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 HYBRID PARAMETERS OF BJT

The following points are worth noting while considering the behavior of
transistor in terms of h-parameters:
i. The values of h-parameters of a transistor will depend upon the type
of connection used in the circuit (i.e. Common-Base, Common-Emitter
or Common-Collector).
ii. The values of h-parameters also depend upon the d.c bias/operating
point (or Q-point). If the d.c. operating point is changed, parameter
values will accordingly change.
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 HYBRID PARAMETERS OF BJT
v1  h11i1  h12 v 2
i 2  h 21i1  h 22 v 2
H- Common-Base Common-Emitter Common-Collector
Definition
parameter Configuration Configuration Configuration
h11 hib hie hic Input Impedance
(Output Short Circuit)

h12 hrb hre hrc Reverse Voltage Ratio

(Input Open Circuit)

h21 hfb hfe hfc Forward Current Gain

(Output Short Circuit)

h22 hob hoe hoc Output Admittance

(Input Open Circuit)
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HYBRID PARAMETERS OF BJT: COMMON-EMITTER CONFIG

v1 = Vbe v2 = Vce
i1 = Ib i2 = Ic

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 HYBRID PARAMETERS OF BJT: COMMON-EMITTER CONFIG

Vbe  hie I b  hreVce

I c  h fe I b  hoeVce

• hie is the short-circuit input resistance/impedance (typically hie ~ 1-5 kΩ)

• hre is the open-circuit reverse voltage ratio (typically negligible i.e. hre ~ 0)
• hfe is the short-circuit forward current ratio (typically hfe ~ β ~ 20-200)
• hoe is the open-circuit output conductance/admittance (hoe ~ 10-100 μS)15
Input impedance Zin = Vbe/Ib with a.c. load rL across output port C-E

h re h fe
KVL in output loop: Vce = −(hoe + 1/rL)hfeIb Zin  h ie 
1
KVL in input loop: Vbe − hreVce = hieIb h oe 
rL
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Output impedance Zout = Vce/Ic with short-circuit across input port B-E

1
KVL in output loop: Vce = −(hoe + 1/rL)hfeIb Zout 
h fe h re
KVL in input loop: Vbe − hreVce = hieIb h oe 
h ie
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 a.c. load rL across output port C-E

Current gain Ai = Ic/Ib

Voltage gain Av h fe
h fe = Vce/Vbe Av 
Ai   1
1  h oe rL = -IcrL/IbZin Zin  h oe  
= -(rL/Zin)Ai  rL 
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 AC equivalent circuits
for transistor amplifiers

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 AC EQUIVALENT CIRCUIT OF COMMON-EMITTER AMPLIFIER

“Small-signal” AC equivalent circuit

using hybrid parameters

Common-emitter amplifier
with biasing circuit

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AC EQUIVALENT CIRCUIT OF COMMON-EMITTER AMPLIFIER
Rc RL
Rp 
Rc  RL
1/ hoe
Ic   h fe I b
1/ hoe  R p

Current gain of transistor Net current gain of

Rc
Ai = Ic/Ib IL  Ic amplifier Gi = IL/Ii
Rc  RL
h fe
Ai  Gi = Ai RcRB
1  h oe rRL p Ii = Ib (RB + hie)/RB
(Rc + RL)(RB + hie)
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AC EQUIVALENT CIRCUIT OF COMMON-EMITTER AMPLIFIER

Rc RL
Rp 
Rc  RL

Voltage gain Gv = Vce/Vbe = -IcRp/Ibhie = -(Rp/hie)Ai

Gv = -Rphfe/hie(1 + hoeRp)

Power gain Gp = |Gv × Gi|

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 AC EQUIVALENT CIRCUIT OF COMMON-BASE AMPLIFIER

Rc RL
Rp 
hfb ~ -α ~ -0.99 Rc  RL
“Small-signal” AC equivalent circuit
using hybrid parameters

Common-base amplifier
with biasing circuit
 AC EQUIVALENT CIRCUIT OF COMMON-BASE AMPLIFIER

Ic = hfbIe(1/hob)/
(1/hob + Rp)

Current gain Gi = Ic/Ie Voltage gain Gv = Vcb/Veb

= -IcRp/Iehib = -(Rp/hib)Gi
Gi = hfb/(1 + hobRp)
Gv = -Rphfb/hib(1 + hobRp)
Power gain Gp = |Gv × Gi|
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 AC EQUIVALENT CIRCUITS OF TRANSISTOR AMPLIFIERS

 For common-base amplifier:  For common-emitter amplifier:

Ai is negative i.e. there is a 180° Ai is positive i.e. input current Ib

phase shift between input and output current Ic are in-phase
current Ie and output current Ic with each other.

Av is positive i.e. the input Av is negative i.e. there is a 180°

voltage Veb and output voltage phase shift between input voltage
Vcb are in-phase with each other Vbe and output voltage Vce
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 Limitations of
Hybrid (h) parameters model
for a transistor

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 HYBRID PARAMETERS: LIMITATIONS OF USAGE
The two major limitations on the use of these parameters:

 It is very difficult to get the exact values of h parameters for a particular

transistor. It is because these parameters are subject to considerable
variation (unit to unit variation, variation due to change in temperature
and variation due to change in operating/Q-point).

 The h parameter approach gives correct answers for small a.c. signals only.
It is because a transistor behaves as a linear device for small signals only.
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HYBRID PARAMETERS: VARIATION WITH TEMPERATURE

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H-PARAMETERS: VARIATION WITH COLLECTOR CURRENT

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Numerical problems

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 NUMERICAL-1

Q.1. A common-emitter amplifier comprises a transistor of parameters

hie = 800 Ω, hfe = 50 and hoe = 20 μS, and the bias components
and coupling capacitors have negligible effect. The input a.c.
signal is 60 mV peak from a source of internal resistance 2.2 kΩ,
and the total load on the amplifier output is 4 kΩ. Determine the
current, voltage and power gains of the amplifier.

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 NUMERICAL-1 1 1
 6
 50k 
hoe 20 10

Current gain:
6
60 10 3
I c 926 10
Ib   20  106 A Gi   6
 46.3
2200  800 Ib 20 10
1/ hoe 50 10
3
6 6
 Ic   h fe I b   50  20  10  926  10 A
1/ hoe  R p  50  4  10 3

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 NUMERICAL-1

Voltage gain: Gv = Vce/Vbe = -IcRp/Ibhie

= -(0.926 × 4000)/(0.02 × 800) = -231.5

Power gain: Gp = |Gv × Gi| = 46.3 × 231.5 = 10,718

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 NUMERICAL-2
Q.2. The BJT parameters in the circuit below are hie = 2 kΩ, hoe = 25 μS, and
hfe = 55. The load resistor dissipates a.c. signal power of 10 mW.
Determine the power gain of the amplifier and the input signal e.m.f. E.

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 NUMERICAL-2

1 1
Output load power,  6
 40k 
3 V 2
hoe 25 10
P  10 10 W  ce
 Vce  10V (rms)
10 10 3

Applying KCL in output side,

10 10 10 6
 55 I b     I  40.9  10 A (rms)
40 10 10 10 10 10
3 3 3 b
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 NUMERICAL-2

Applying KCL in input side,

 6 2  10 
3
I i   40.9 10    40.9 10 .
6
3 
6
 I i  41.9 10 A
 80 10  (rms)
Input signal e.m.f,
E   41.9 10  5 10    40.9  10  2  10   0.29V (rms)
6 3 6 3
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 NUMERICAL-2

Input power:
Pi  Vbe I i   40.9  10  2  10    41.9  10
6 3 6
 6
Pi  3.43 10 W

3 Po
Output Power: Po  10  10 W Power gain: GP   2920
Pi
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 NUMERICAL-3
Q.3. A BJT used in common-emitter arrangement has the following hybrid
parameters when the d.c. operating point is VCEQ = 10 V and ICQ = 1 mA:
hie = 2000 Ω, hoe =10−4 Ʊ, hre = 10−3, hfe = 50.
The a.c. load seen by the transistor is rL = 600 Ω.

Determine (i) input impedance (ii) current gain and (iii) voltage gain.
What will be approximate values using reasonable approximations?

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 NUMERICAL-3

a.c. load rL = 600 Ω

across output port
C-E

3
h re h fe 10  50
i) Input impedence Ic/Ib: Zin  h ie   2000   1972  h ie
1 4 1
h oe  10 
rL 600
Approximately, Zin ≈ hie = 2000 Ω
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 NUMERICAL-3
h fe 50
ii) Current gain Ic/Ib: A i    47
1  h oe rL 1   600 10 
4

Approximately, Ai ≈ hfe = 50

h fe 50
iii) Voltage gain Vce/Vbe: A v    14.4
 1  4 1 
Zin  h oe   1972 10  
 rL   600 

Approximately, Av ≈ -(rL/hie)hfe = -(600/2000)×50 = -15

i.e. voltage gain is ratio of load-to-input impedance times current gain
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 NUMERICAL-4
Q.4. In the common-emitter amplifier
shown, RC = RL = 800 Ω, Ri = 0,
R1 = 1.2 kΩ, R2 = 2.7 kΩ.
The transistor h-parameters are
hre = 0, hoe = 100 μS, hfe = 90, and
hie = 200 Ω.
Calculate:
(a) the voltage gain Gv
(b) the current gain Gi.
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 NUMERICAL-4

R C 1/ h oe 
Output (load) current: i L  h fei b
R C 1/ h oe   R L 1/ h oe   R L R C

=> Voltage gain vL/vbe:

R Li L R R 90  800 2

GVv 
A  C L
h fe   173.08
h iei b h ie  R C  R L  h oe R L R C  200 1600  100  800  
2

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 NUMERICAL-4

R 1R 2 RB
RB   831 Relation between input and base current: i b  ii
R1  R 2 R B  h ie

=> Current gain:

iL R Bi L i L R B h ie 831 200   173.08 
Gi  
A  AGVv   34.87
ii  R B  h ie  i b R L  R B  h ie  800 1031
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 NUMERICAL-5
Q.5. For the typical common-emitter amplifier below, hie = 1 kΩ, hre = 10-4,
hfe = 100, hoe = 12 μS, and RL = 2 kΩ. Calculate the
(a) Current-gain Ai (b) Voltage-gain Av (c) Input impedance Zin
(d) Output impedance Zo. Thus characterize this typical CE amplifier.

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 NUMERICAL-5

1/ h oe
(a) Output (load) current: i L   h fei b 
1/ h oe  R L
1 100
=> Current gain iL/ib: A i   h fe     97.7
1  h oe R L 1  12  2k 
Note: Ai ≈ hfe = 100 45
 NUMERICAL-5

 1 
 s   be  h iei b  h re  ce  ce   h fei b  || R L 
 h oe 
(b) Eliminating ib, get voltage gain as
s h fe R L 100  2k
A     199.2
 ce h ie  R L  h ie h oe  h fe h re   
1k  2k 1k 12   100  110 4  
 
Note: Av ≈ hfeRL/hie = 100×(2k/1k) = 200
 NUMERICAL-5

 1 
 s   be  h iei b  h re  ce  ce   h fei b  || R L 
 h oe 
(c) Eliminating vce, get input impedance as
s
Zin   h ie 
h re h fe R L
 1k 
1  10 4
 100  2k   980.5
ib 1  h oe R L 1  12  2k 
Note: Zin ≈ hie = 1000 Ω
 NUMERICAL-5

(d) We deactivate (short) vs and replace RL with a driving-point source vdp = vce.
h re
Then, KVL for the input loop: i b    dp KCL at node C: i c  i dp  h fei b  h oe  dp
h ie
 dp 1 1
Eliminating ib, Zo     500k
i dp h oe  h fe h re / h ie 12  1 10  100  / 1k  
4
 
The output impedance is increased from 1/hoe ~ 80 kΩ by feedback due to48hrevce.
 NUMERICAL-5

(e) Based on the typical values of this example, the characteristics of the
common-emitter amplifier can be summarized as follows:

• Large current gain Ai ~100

• Large voltage gain Av ~200
• Large power gain Ap ~ AiAv ~ 20,000
• Input/output phase shift of 1800
• Moderate input impedance Zin ~ 1 kΩ
• High output impedance Zout ~ 0.5 MΩ
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 UNSOLVED NUMERICALS

Q.1. A CE amplifier has hie = 1000 Ω, hre = 10–4, hfe = 100 and hoe = 12 × 10–6 S.
The load resistance is 2000 Ω. Find (i) current gain (ii) voltage gain
(iii) output resistance.
Ans: (i) 97.7 (ii) – 199.2 (iii) 5 × 105 Ω

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 UNSOLVED NUMERICALS
Q.2. In the CB amplifier of Fig. (2). let hib=30; hrb=4x10-6; hfb=0:99; hob=8x10-7S,
and RL =20k. (These are typical CB amplifier values.) Find expressions for the
(a) current-gain ratio Ai, (b) voltage-gain ratio Av, (c) input impedance Zin, and
(d) output impedance Zo. (e) Evaluate this typical CB amplifier.
Ans: (a) 0.974 (b) 647.9 (c) 30.08Ω (d) 1.07MΩ

Fig. 2. CB Amplifier
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 UNSOLVED NUMERICALS
Q.3. In the CC amplifier of Fig. (3). let hic=1kohm; hrc=1; hfc=-101; hoc=12µS, and
RL=2kohm. Find expressions for the (a) current-gain ratio Ai, (b) voltage-gain
ratio Av, (c) input impedance Zin, and (d) output impedance Zo. (e) Evaluate this
typical CC amplifier.
Ans: (a) 98.6 (b) 0.995 (c) 8.41MΩ (d) 9.9Ω

Fig. 3. CC Amplifier
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 REFERENCES

 Hughes, “Electrical and Electronic Technology”, Pearson Prentice

Hall, Tenth Edition, 2008.
 Robert L. Boylestad, Louis Nashelsky, “Electronic Devices and
Circuit Theory”, Pearson Education Limited, Eleventh Edition,
2014.
 Jimmie. J. Cathey, “Electronic Devices and Circuits”, second
edition, Schaum’s outlines.

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