Ade U1 PPT 1
Ade U1 PPT 1
Unit 1
Transistor as an amplifier
Course Instructor
Dr. Vishal Moyal
Contents
• Unit 1: Transistor as an amplifier
• load line, Small signal low frequency analysis of single stage amplifier
in different configuration, High frequency equivalent circuit of
transistor (hybrid pi), Cascade amplifier, High input resistance circuits-
C coupled amplifier Frequency response, Definition of 3 db
bandwidth, Effect of cascading on gain & BW, Classification of
amplifiers
Transistors
BJT (PNP) Electrical Diagram FET and BJT Transistor Different types and sizes
Transistors (Cont…)
• Purpose
• To amplify and switch electronic signals on or off (high or low)
• Modern Electronics
Vacuum tubes
• Purpose
• Used as signal amplifiers and
switches
• Advantages
• High power and frequency
operation
• Operation at higher voltages
• Less vulnerable to
electromagnetic pulses
• Disadvantages
• Very large and fragile
• Energy inefficient
• Expensive
Invention
• Evolution of electronics
• In need of a device that was small, robust, reliable, energy
efficient and cheap to manufacture
• 1947
• John Bardeen, Walter Brattain and William Schockly invented
transistor
• Transistor Effect
• “when electrical contacts
were applied to a crystal
of germanium, the output
power was larger than
the input.”
Department of Electrical Engineering
Shri Vile Parle Kelavani Mandal’s Institute of Technology, Dhule
General Applications
Doping
• Process of introducing impure elements (dopants) into
semiconductor wafers to form regions of differing electrical
conductivity
Doping Effects
• P-type semiconductors
• Created positive charges, where electrons have been removed, in
lattice structure
• N-type semiconductors
• Added unbound electrons create negative charge in lattice structure
• Resulting material
• P-N junction
Department of Electrical Engineering
Shri Vile Parle Kelavani Mandal’s Institute of Technology, Dhule
P-N junction
Forward Biasing Reverse Biasing
Transistor Characteristics
• Maximum power rating
• Maximum operating frequency
• Application
• Physical packaging
• Amplification factor
Types of Transistors
• Bipolar Junction Transistor (BJT)
BJT Introduction
• Bipolar Junction Transistors (BJT)
consists of three sandwiched
semiconductor layers.
• The three layers are connected to
collector (C), emitter (E), and base (B)
pins.
• Current supplied to the base controls the
amount of current that flows through the
collector and emitter
Department of Electrical Engineering
Shri Vile Parle Kelavani Mandal’s Institute of Technology, Dhule
BJT Schematic
NPN
• NPN
• BE forward bias
• BC reverse bias
PNP
• PNP
• BE reverse bias
• BC forward bias
IB3
IB2
IB1
What is an amplifier?
• Amplifier raises the level of a weak signal.
• No change in the wave shape.
• No change in the frequency of the input signal
IC = VCC / RC
When IC = 0;
VCE = 12 V
When VCE = 0
IC = VCC / RC
= 12 v / 3 kΩ
= 4 mA
The Coordinates of saturation point are (0, 4 mA)
Department of Electrical Engineering
Shri Vile Parle Kelavani Mandal’s Institute of Technology, Dhule
Cut-off point
When transistor is cut-off Ic equals to zero
ICQ +VCEQ / Rac - VCE(cutoff) / Rac = 0
VCE(cutoff) = VCEQ + ICQ x Rac.
Line joining these two points is called A.C Load Line
It represents all possible a.c operating points.
The maximum possible positive signal swing is ICQRac.
The maximum possible negative signal swing is VCEQ.
Ii Io
1 2
hi
Vi hrVo hfIi ho Vo
1' 2'
h-Parameters
Simplified
hie = re
hfe =
hoe = 1/ro
hib re
h fb 1
Department of Electrical Engineering
Shri Vile Parle Kelavani Mandal’s Institute of Technology, Dhule
Voltage Gain:- Voltage gain or voltage amplification is defined as the ratio of the
output voltage V2 to the input voltage V1.
Where,
Frequency Response
Frequency Response of an electric or electronics circuit allows us to
see exactly how the output gain (known as the magnitude response) and
the phase (known as the phase response) changes at a particular single
frequency, or over a whole range of different frequencies from 0Hz,
(d.c.) to many thousands of mega-hertz, (MHz) depending upon the
design characteristics of the circuit.
Frequency Response
Graphical representations of frequency response curves are called Bode
Plots and as such Bode plots are generally said to be a semi-logarithmic
graphs because one scale (x-axis) is logarithmic and the other (y-axis) is
linear (log-lin plot) as shown.
Then we can see that the frequency response of any given circuit is the
variation in its behavior with changes in the input signal frequency as it
shows the band of frequencies over which the output (and the gain)
remains fairly constant.
The -3dB point is also known as the half-power points since the output
power at this corner frequencies will be half that of its maximum 0dB
value as shown.
EMITTER FOLLOWER
Input resistance:
Voltage gain:
For frequencies greater than 1 MHz the response of the transistor will
be limited by internal and parasitic capacitance’s of the bipolar junction
transistor.
Thus in order to estimate the gain and switching on and off times of
BJT at higher frequencies the high frequency model of BJT has to be
used to get reasonably accurate estimates.
The ON and OFF switching times of BJT will be high and speed will be
limited due to internal charge storage effects.
Where
B’ = internal node in base
gm = Transconductance
Rb’e is the Internal base node to emitter resistance. It accounts for the increase
recombination base current as emitter current increases.
It is in parallel with the collector circuit and hence reduces the collector current
value from emitter current.
This resistance will be high order of kilo ohms as the decrease in the collector
current due to base recombination currents will be very less.
Department of Electrical Engineering
Shri Vile Parle Kelavani Mandal’s Institute of Technology, Dhule
Forward transit time is defined as the average time the minority carrier
spends in base.
Ce = τF*IE/VT
where
IE is emitter bias current
VT is voltage equivalent of temperature
= k*T/e
=26 mV at 27 Deg C
τF is forward base transit time given as
= W2/(2*DB)
W is effective base width
DB is diffusion constant for minority carriers
in base holes in PNP transistor and electrons in NPN
transistor.
Ce is a function of temperature as
Ce = gm/(2*pi*fT)
fT = hfe*fβ
In practice there will be some delay between the input signal and output
signal of BJT which will be very small compared to signal
period(1/frequency of input signal) and hence can be neglected.
Department of Electrical Engineering
Shri Vile Parle Kelavani Mandal’s Institute of Technology, Dhule
Cascade Amplifier:
The output of one amplifier is the input to another stage. In this way the
overall voltage gain can be increased, when number of amplifier stages
are used in succession it is called a multistage amplifier or cascade
amplifier.
A n-stage amplifier
A n-stage amplifier can be represented by the block diagram as
shown in fig.
To represent the gain of the cascade amplifier, the voltage gains are
represents in dB.
The two power levels of input and output of an amplifier are compared
on a logarithmic scale rather than linear scale.
The number of bels by which the output power P2exceeds the input
power P1 is defined as
Coupling
In a multistage amplifier the output of one stage makes the input of the
next stage.
Also the dc voltage at the output of one stage should not be permitted to
go to the input of the next. Otherwise, the biasing of the next stage are
disturbed.
Department of Electrical Engineering
Shri Vile Parle Kelavani Mandal’s Institute of Technology, Dhule
Types of Coupling
The three couplings generally used are.
RC coupling
Impedance coupling
Transformer coupling.
RC coupling
RC coupling the most commonly used method of coupling from one
stage to the next.
The grounded emitter stage amplifies the signal, which is then coupled
to next CE stage the signal is further amplified to get larger output.