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2SA1268

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71 views2 pages

2SA1268

Uploaded by

Stephane Michaux
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ST 2SA1268

PNP Silicon Epitaxial Planar Transistor


For high voltage applications.

The transistor is subdivided into two groups, G and L


according to its DC current gain.

On special request, these transistors can be


manufactured in different pin configurations.

TO-92 Plastic Package


Weight approx. 0.19g

Absolute Maximum Ratings (T a = 25? )

Symbol Value Unit


Collector Base Voltage -VCBO 120 V

Collector Emitter Voltage -VCEO 120 V


Emitter Base Voltage -VEBO 5 V
Collector Current -IC 100 mA

Emitter Current IE 100 mA


Power Dissipation Ptot 300 mW
O
Junction Temperature Tj 125 C
O
Storage Temperature Range TS -55 to +125 C

G S P FORM A IS AVAILABLE

Тел.: (495) 795-0805


Факс: (495) 234-1603
РАДИОТЕХ-ТРЕЙД Эл. почта: [email protected]
Веб: www.rct.ru

Free Datasheet http://www.datasheet4u.com/


ST 2SA1268

Characteristics at Tamb=25 OC

Symbol Min. Typ. Max. Unit


DC Current Gain
at -VCE=6V, -IC=2mA
Current Gain Group G hFE 200 - 400 -
L hFE 350 - 700 -
Collector Emitter Breakdown Voltage
at -IC=1mA -V(BR)CEO 120 - - V
Gain Bandwidth Product
at -VCE=6V, -IC=1mA fT - 100 - MHz
Noise Figure
at -VCE=6V, -IC=0.1mA, RG=10kΩ, f=10Hz NF - - 6 dB
Output Capacitance
at -VCB=10V, f=1MHz COB - 4 - pF
Base Emitter Voltage
at -VCE=6V,-IC=2mA -VBE - 0.65 - V
Collector Cutoff Current
at -VCB=120V -ICBO - - 0.1 µA
Emitter Cutoff Current
at -VEB=5V -IEBO - - 0.1 µA
Collector Saturation Voltage
at -IC=10mA, -IB=1mA -VCE(sat) - - 0.3 V

G S P FORM A IS AVAILABLE

SEMTECH ELECTRONICS LTD.


(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
Free Datasheet http://www.datasheet4u.com/

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