INA296A-Q1, INA296B-Q1

SBOSA32B – FEBRUARY 2023 – REVISED MARCH 2024

INA296x-Q1 AEC-Q100, –5V to 110V, Bidirectional, 1.1MHz, 8V/μs, Ultra-Precise

Current Sense Amplifier

1 Features 3 Description
• AEC-Q100 qualified for automotive applications: The INA296x-Q1 is an ultra-precise, bidirectional
– Temperature grade 1: −40°C to 125°C, TA current sense amplifier that can measure voltage
• Functional Safety-Capable drops across shunt resistors over a wide common-
– Documentation available to aid functional safety mode range from –5V to 110V, independent of
system design the supply voltage. The high-precision current
• Wide common-mode voltage: measurement is achieved through a combination of
– Operational voltage: −5V to 110V low offset voltage (±10µV, maximum), small gain error
– Survival voltage: −20V to 120V (±0.01%, maximum) and a high DC CMRR (typical
• Bidirectional operation 166dB). The INA296x-Q1 is not only designed for high
• High small signal bandwidth: 1.1MHz (at all gains) voltage, bidirectional DC current measurements, but
• Slew rate: 8V/µs also for high-speed applications (such as transient
• Step response settling time to 1%: 1µs detection and fast overcurrent protection) with a high
• Excellent CMRR: 166dB signal bandwidth of 1.1MHz and fast settling time.
• Accuracy: The INA296x-Q1 operates from a single 2.7V to
– Gain error (maximum) 20V supply, drawing 2.5mA of supply current. The
• Version A: ±0.01%, ±1ppm/°C drift INA296x-Q1 is available in five gain options: 10V/V,
• Version B: ±0.1%, ±5ppm/°C drift 20V/V, 50V/V, 100V/V, and 200V/V. Multiple gain
– Offset voltage (maximum) options allow for optimization between available
• Version A: ±10µV, ±0.1µV/°C drift shunt resistor values and wide output dynamic range
• Version B: ±150µV, ±0.5µV/°C drift requirements.
• Available gains: The INA296x-Q1 is specified over operating
– INA296A1-Q1 : 10V/V temperature range of −40°C to 125°C.
– INA296A2-Q1 : 20V/V
– INA296A3-Q1 : 50V/V Package Information
– INA296A4-Q1 : 100V/V PART NUMBER PACKAGE(1) PACKAGE SIZE(2)
– INA296A5-Q1 : 200V/V DDF (SOT-23, 8) 2.9mm × 2.8mm
• Package options: SOT23-8, VSSOP-8, SOIC-8, INA296A-Q1 DGK (VSSOP, 8) 3mm × 4.9mm
VSSOP-10 INA296B-Q1 D (SOIC, 8) 4.9mm × 6mm

2 Applications DGS (VSSOP, 10)(3) 3mm × 4.9mm

• DC/DC converter (1) For all available packages, see the package option
• Battery management systems (BMS) addendum at the end of the data sheet.
(2) The package size (length × width) is a nominal value and
• Fuel cell control unit includes pins, where applicable.
• Smart junction box (3) Package is preview only.
RSENSE RSENSE
48V 12V

PWM
IN+ IN– IN+ IN–
VS VS
PWM
INA296

INA296

OUT OUT

REF1 REF1 CBYPASS

REF2 REF2
CBYPASS
GND GND

Typical Application - DC/DC Converter

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA296A-Q1, INA296B-Q1
SBOSA32B – FEBRUARY 2023 – REVISED MARCH 2024 www.ti.com

Table of Contents
1 Features............................................................................1 7.4 Device Functional Modes..........................................17
2 Applications..................................................................... 1 8 Application and Implementation.................................. 23
3 Description.......................................................................1 8.1 Application Information............................................. 23
4 Device Comparison......................................................... 3 8.2 Typical Application.................................................... 24
5 Pin Configuration and Functions...................................3 8.3 Power Supply Recommendations.............................26
6 Specifications.................................................................. 5 8.4 Layout....................................................................... 26
6.1 Absolute Maximum Ratings........................................ 5 9 Device and Documentation Support............................28
6.2 ESD Ratings............................................................... 5 9.1 Documentation Support............................................ 28
6.3 Recommended Operating Conditions.........................5 9.2 Receiving Notification of Documentation Updates....28
6.4 Thermal Information....................................................5 9.3 Support Resources................................................... 28
6.5 Electrical Characteristics.............................................6 9.4 Trademarks............................................................... 28
6.6 Typical Characteristics................................................ 9 9.5 Electrostatic Discharge Caution................................28
7 Detailed Description......................................................16 9.6 Glossary....................................................................28
7.1 Overview................................................................... 16 10 Revision History.......................................................... 28
7.2 Functional Block Diagram......................................... 16 11 Mechanical, Packaging, and Orderable
7.3 Feature Description...................................................16 Information.................................................................... 29

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4 Device Comparison
Table 4-1. Device Comparison
DEVICE NAME GAIN
INA296A1-Q1, 1INA296B1-Q1 10 V/V
INA296A2-Q1, 1INA296B2-Q1 20 V/V
INA296A3-Q1, 1INA296B3-Q1 50 V/V
INA296A4-Q1, 1INA296B4-Q1 100 V/V
INA296A5-Q1, 1INA296B5-Q1 200 V/V

5 Pin Configuration and Functions

IN± 1 8 IN+ IN± 1 8 IN+

GND 2 7 REF1 GND 2 7 REF1

REF2 3 6 Vs REF2 3 6 Vs

NC 4 5 OUT NC 4 5 OUT

Not to scale Not to scale

Figure 5-1. INA296x-Q1: DDF Package 8-Pin Figure 5-2. INA296x-Q1: D and DGK Package 8-Pin
SOT-23 Top View SOIC and 8-Pin VSSOP Top View

Table 5-1. Pin Functions: D, DDF and DGK Packages

PIN
TYPE DESCRIPTION
NAME NO.
GND 2 Ground Ground
Current-sense amplifier positive input. For high-side applications, connect to bus-voltage
IN+ 8 Input
side of sense resistor. For low-side applications, connect to load side of sense resistor.
Current-sense amplifier negative input. For high-side applications, connect to load side of
IN– 1 Input
sense resistor. For low-side applications, connect to ground side of sense resistor.
NC 4 Ground Reserved. Connect to ground.
OUT 5 Output Output voltage
Reference 1 voltage. Connect to voltage potential from 0 V to VS; see Adjusting the Output
REF1 7 Input
With the Reference Pins for connection options.
Reference 2 voltage. Connect to voltage potential from 0 V to VS; see Adjusting the Output
REF2 3 Input
With the Reference Pins for connection options.
VS 6 Power Power supply, 2.7 V to 20 V

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IN– 1 10 IN+

NC 2 9 NC

GND 3 8 REF1

REF2 4 7 VS

NC 5 6 OUT

Not to scale

Note: The DGS (VSSOP) package is preview only.

Figure 5-3. INA296x-Q1: DGS Package 10-Pin VSSOP Top View

Table 5-2. Pin Functions: DGS Package

PIN
TYPE DESCRIPTION
NAME NO.
GND 3 Ground Ground
Current-sense amplifier positive input. For high-side applications, connect to bus-voltage
IN+ 10 Input
side of sense resistor. For low-side applications, connect to load side of sense resistor.
Current-sense amplifier negative input. For high-side applications, connect to load side of
IN– 1 Input
sense resistor. For low-side applications, connect to ground side of sense resistor.
NC 5 Ground Reserved. Connect to ground.
NC 2 – Leave unconnected
NC 9 – Leave unconnected
OUT 6 Output Output voltage
Reference 1 voltage. Connect to voltage potential from 0 V to VS; see Adjusting the Output
REF1 8 Input
With the Reference Pins for connection options.
Reference 2 voltage. Connect to voltage potential from 0 V to VS; see Adjusting the Output
REF2 4 Input
With the Reference Pins for connection options.
VS 7 Power Power supply, 2.7 V to 20 V

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage
22 V
(VS)

Analog inputs, Differential (VIN+) − (VIN-) −30 30 V

VIN+, VIN- (2) Common-mode −20 120 V
REF1, REF2,
GND − 0.3 VS + 0.3 V
NC inputs
Output GND – 0.3 Vs + 0.3 V
TA Operating temperature –55 150 °C
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C

(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not
imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating
Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be
fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.

6.2 ESD Ratings

VALUE UNIT
Human body model (HBM), per AEC Q100-002(1)
±2000
HBM ESD classification level 2
V(ESD) Electrostatic discharge V
Charged device model (CDM), per AEC Q100-011
±1000
CDM ESD classification level C6

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCM Common-mode input range −5 48 110 V
VS Operating supply range 2.7 5 20 V
TA Ambient temperature –40 125 °C

6.4 Thermal Information

INA296x -Q1
THERMAL METRIC(1) DDF (SOT23) DGK (VSSOP) D (SOIC) DGS (VSSOP)(2) UNIT
8 PINS 8 PINS 8 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 129.7 167.2 122.9 TBD °C/W
RθJC(top) Junction-to-case (top) thermal resistance 58 58.9 54.7 TBD °C/W
RθJB Junction-to-board thermal resistance 52.6 88.9 68.8 TBD °C/W
ΨJT Junction-to-top characterization parameter 2.3 8.1 12.2 TBD °C/W
Junction-to-board characterization
ΨJB 52.3 87.4 67.5 TBD °C/W
parameter

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
note.
(2) This package is preview only.

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6.5 Electrical Characteristics

at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN–, VCM = VIN– = 48 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VIN+, VIN– = –5 V to 110 V, VSENSE = 0 mV
VCM Common-mode input range(1) –5 110 V
TA = –40°C to 125°C
VIN+, VIN– = –5 V to 110 V, VSENSE = 0 mV
150 166
TA = –40°C to 125°C, INA296A-Q1
Common-mode rejection ratio, input-
CMRR VIN+, VIN– = –5 V to 110 V, VSENSE = 0 mV dB
referred 120 130
TA = –40°C to 125°C, INA296B-Q1
f = 50 kHz 105
VSENSE = 0 mV, INA296A1-Q1 ±5 ±20
VSENSE = 0 mV, INA296A2-Q1 ±3 ±15
VSENSE = 0 mV, INA296A3-Q1,
Vos Offset voltage, input-referred ±3 ±10 µV
INA296A4-Q1
VSENSE = 0 mV, INA296A5-Q1 ±2 ±8
VSENSE = 0 mV, INA296B-Q1 ±25 ±150
TA = –40°C to 125°C, INA296A1-Q1 ±50 ±250
TA = –40°C to 125°C, INA296A2-Q1 ±30 ±150
dVos/dT Offset voltage drift, input-referred TA = –40°C to 125°C, INA296A3-Q1, nV/°C
±20 ±100
INA296A4-Q1, INA296A5-Q1
TA = –40°C to 125°C, INA296B-Q1 ±100 ±500
VS = 2.7 V to 20 V, VSENSE = 0 mV,
VREF1 = VREF2 = 1V, ±0.2 ±1
TA = –40°C to 125°C, INA296A1-Q1
VS = 2.7 V to 20 V, VSENSE = 0 mV,
VREF1 = VREF2 = 1V, ±0.1 ±0.75
TA = –40°C to 125°C, INA296A2-Q1
Power-supply rejection ratio, input-
PSRR VS = 2.7 V to 20 V, VSENSE = 0 mV, µV/V
referred
VREF1 = VREF2 = 1V,
±0.06 ±0.5
TA = –40°C to 125°C, INA296A3-Q1,
INA296A4-Q1, INA296A5-Q1
VS = 2.7 V to 20 V, VSENSE = 0 mV,
VREF1 = VREF2 = 1V, ±1 ±10
TA = –40°C to 125°C, INA296B-Q1
IB Input bias current IB+, IB–, VSENSE=0 mV 25 35 45 µA
Reference input range 0 VS V
OUTPUT
A1, B1 Devices 10 V/V
A2, B2 Devices 20 V/V
G Gain A3, B3 Devices 50 V/V
A4, B4 Devices 100 V/V
A5, B5 Devices 200 V/V

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at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN–, VCM = VIN– = 48 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
(GND + 50 mV) < VOUT < (VS - 200 mV),
INA296A1-Q1, INA296A2-Q1, INA296A3- ±0.002 ±0.01
Q1
Gain Error (GND + 50 mV) < VOUT < (VS - 200 mV), %
±0.003 ±0.015
INA296A4-Q1, INA296A5-Q1
(GND + 50 mV) < VOUT < (VS - 200 mV),
±0.02 ±0.1
INA296B-Q1
GERR
TA = –40°C to +125°C,
INA296A1-Q1, INA296A2-Q1, INA296A3- ±0.05 ±1
Q1
Gain Error Drift TA = –40°C to +125°C, ppm/°C
±0.1 ±2
INA296A4-Q1, INA296A5-Q1
TA = –40°C to +125°C,
±0.2 ±5
INA296B-Q1
Non-Linearity Error ±0.001 %
No sustained oscillations, No isolation
Maximum Capacitive Load 1 nF
resistor
VOLTAGE OUTPUT
RL = 10 kΩ to GND,
Swing to VS Power Supply Rail VS − 0.07 VS − 0.2 V
TA = –40°C to +125°C
RL = 10 kΩ to GND, VSENSE = 0
Swing to Ground mV, VREF1 = VREF2 = 0 V, 8 20 mV
TA = –40°C to +125°C
REFERENCE INPUT
VREF1 = VREF2 = 0.5 V to 4.5 V,
±1 ±2.5
TA = –40°C to +125°C, INA296A1-Q1,
VREF1 = VREF2 = 0.5 V to 4.5 V,
Reference voltage rejection ratio, input- TA = –40°C to +125°C, INA296A2-Q1,
RVRR ±0.5 ±1.5 µV/V
referred INA296A3-Q1, INA296A4-Q1, INA296A5-
Q1
VREF1 = VREF2 = 0.5 V to 4.5 V,
±10 ±20
TA = –40°C to +125°C, INA296B-Q1
VOUT = |(VREF1 + VREF2)| / 2 at VSENSE =0
mV,
VREF1 = VS, VREF2 = GND
±0.002 ±0.005
VREF1 = GND, VREF2 = VS
TA = –40°C to +125°C, INA296A1-Q1,
INA296A2-Q1,
VOUT = |(VREF1 + VREF2)| / 2 at VSENSE =0
mV,
Reference divider accuracy VREF1 = VS, VREF2 = GND %
±0.002 ±0.01
VREF1 = GND, VREF2 = VS
TA = –40°C to +125°C, INA296A3-Q1,
INA296A4-Q1, INA296A5-Q1
VOUT = |(VREF1 + VREF2)| / 2 at VSENSE =0
mV,
VREF1 = VS, VREF2 = GND ±0.02 ±0.15
VREF1 = GND, VREF2 = VS
TA = –40°C to +125°C, INA296B-Q1
FREQUENCY RESPONSE
BW Bandwidth All Gains, −3dB Bandwidth 1.1 MHz

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at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN–, VCM = VIN– = 48 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN+, VIN– = 48 V, VOUT = 0.5 V to 4.5 V,
1.5 µs
Output settles to 0.5%
VIN+, VIN– = 48 V, VOUT = 0.5 V to 4.5 V,
Settling time 1 µs
Output settles to 1%
VIN+, VIN– = 48 V, VOUT = 0.5 V to 4.5 V,
0.5 µs
Output settles to 5%
SR Slew Rate Rising 8 V/µs
NOISE (Input reffered)
A1, B1 Devices 62
A2, B2 Devices 49
Voltage noise density A3, B3 Devices 39 nV/√Hz
A4, B4 Devices 36
A5, B5 Devices 28
POWER SUPPLY
VS Supply Voltage 2.7 20 V
VSENSE = 0 mV 2.5 3 mA
IQ Quiescent current VSENSE = 0 mV,
3.2 mA
TA = –40°C to+125°C
TEMPERATURE
TA Specified Range –40 125 °C

(1) Common-mode voltage at both VIN+ and VIN- must not exceed the specified common-mode input range.

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6.6 Typical Characteristics

at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN–, VCM = VIN– = 48 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)

Population
Population

-10.5

10.5
-9.5
-8.5
-7.5
-6.5
-5.5
-4.5
-3.5
-2.5
-1.5
-0.5
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5
-21
-19
-17
-15
-13
-11

11
13
15
17
19
21
-9
-7
-5
-3
-1
1
3
5
7
9

Input Offset Voltage ( V) Input Offset Voltage ( V)

Figure 6-1. INA296A1-Q1 Input Offset Production Distribution Figure 6-2. INA296A2-Q1 Input Offset Production Distribution

Population
Population

0.2
0.6

1.4
1.8
2.2
2.6

3.4
3.8
4.2
-4.2
-3.8
-3.4

-2.6
-2.2
-1.8
-1.4

-0.6
-0.2
0.2
0.6

1.4
1.8
2.2
2.6

3.4
3.8
4.2
-4.2
-3.8
-3.4

-2.6
-2.2
-1.8
-1.4

-0.6
-0.2

-3

-1

3
-3

-1

Input Offset Voltage ( V) Input Offset Voltage ( V)

Figure 6-3. INA296A3-Q1 and INA296A4-Q1 Input Offset Figure 6-4. INA296A5-Q1 Input Offset Production Distribution
Production Distribution
12
G = 10
G = 20
8 G = 50
Input Offset Voltage ( V)

G = 100
G = 200
4
Population

-4

-8
-136
-120
-104

104
120
136
-88
-72
-56
-40
-24
-8

24
40
56
72
88
8

-12
-50 -25 0 25 50 75 100 125 150
Input Offset Voltage ( V) Temperature ( C)

. INA296A-Q1

Figure 6-5. All Gains INA296B-Q1 Input Offset Production Figure 6-6. Input Offset Voltage vs Temperature
Distribution

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6.6 Typical Characteristics (continued)

at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN–, VCM = VIN– = 48 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)

10
Common-Mode Rejection Ratio (nV/V)

8
6
4
2
0
-2
-4 G = 10
G = 20
-6 G = 50
-8 G = 100
G = 200
-10
-50 -25 0 25 50 75 100 125 150
Temperature ( C)
INA296A-Q1 INA296A-Q1

Figure 6-7. Common-Mode Rejection Ratio vs Temperature Figure 6-8. Common-Mode Rejection Ratio vs Frequency
50

40

30
Population
Gain (dB)

20

10
G = 10
G = 20
0 G = 50
G = 100
G = 200
-10.5

10.5
-9.5
-8.5
-7.5
-6.5
-5.5
-4.5
-3.5
-2.5
-1.5
-0.5
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5
-10
10 100 1k 10k 100k 1M 10M
Frequency (Hz) Gain Error (m%)
. 1 % = 1000 m%
Figure 6-9. Gain vs Frequency Figure 6-10. INA296A1-Q1, INA296A2-Q1 and INA296A3-Q1 Gain
Error Production Distribution
Population

Population
-10.5

10.5
-9.5
-8.5
-7.5
-6.5
-5.5
-4.5
-3.5
-2.5
-1.5
-0.5
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5

-63
-57
-51
-45
-39
-33
-27
-21
-15

15
21
27
33
39
45
51
57
63
-9
-3
3
9

Gain Error (m%) Gain Error (m%)

1 % = 1000 m% 1 % = 1000 m%

Figure 6-11. INA296A4-Q1 and INA296A5-Q1 Gain Error Figure 6-12. All Gains INA296B-Q1 Gain Error Production
Production Distribution Distribution

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6.6 Typical Characteristics (continued)

at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN–, VCM = VIN– = 48 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)

40 0.5
G = 10

Power-Supply Rejection Ratio ( V/V)

30 G = 20 0.4
G = 50 0.3
20 G = 100
G = 200 0.2
Gain Error (m )

10 0.1
0 0

-10 -0.1
-0.2 G = 10
-20 G = 20
-0.3 G = 50
-30 -0.4 G = 100
G = 200
-40 -0.5
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature ( C) Temperature ( C)
INA296A-Q1 INA296A-Q1

Figure 6-13. Gain Error vs Temperature Figure 6-14. Power-Supply Rejection Ratio vs Temperature
160
G = 10
Power-Supply Rejection Ratio (dB)

140 G = 20
G = 50 to 200

120

100

80

60

40

20
1 10 100 1k 10k 100k 1M 10M
Frequency (Hz)
INA296A-Q1 VSENSE = 0 V

Figure 6-15. Power-Supply Rejection Ratio vs Frequency Figure 6-16. Input Bias Current vs Common-Mode Voltage
50 400
IB+
320 IB-
40 IB+, VS = 0V
240 IB-, VS = 0V
Input Bias Current ( A)

Input Bias Current ( A)

30 160

VS = 2.7V to 20V, VCM = 110V 80

20 VS = 2.7V to 20V, VCM = 48V
VS = 2.7V to 20V, VCM = -5V 0
VS = 0V, VCM = 110V
10 -80

-160
0
-240

-10 -320
-50 -25 0 25 50 75 100 125 150 -2000 -1500 -1000 -500 0 500 1000 1500 2000
Temperature ( C) VSENSE (mV)
Figure 6-17. Input Bias Current vs Temperature Figure 6-18. INA296x1-Q1 Input Bias Current vs VSENSE

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6.6 Typical Characteristics (continued)

at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN–, VCM = VIN– = 48 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)

250 150
IB+ IB+
200 IB- 125 IB-
IB+, VS = 0V IB+, VS = 0V
150 IB-, VS = 0V 100 IB-, VS = 0V
Input Bias Current ( A)

Input Bias Current ( A)

100 75

50 50

0 25

-50 0

-100 -25

-150 -50

-200 -75
-1000 -750 -500 -250 0 250 500 750 1000 -400 -300 -200 -100 0 100 200 300 400
VSENSE (mV) VSENSE (mV)
Figure 6-19. INA296x2-Q1 Input Bias Current vs VSENSE Figure 6-20. INA296x3-Q1 and INA296x4-Q1 Input Bias Current
vs VSENSE
84 VS
IB+ 125 C
72 IB- VS - 0.3 25 C
IB+, VS = 0V -40 C
60 IB-, VS = 0V VS - 0.6
Input Bias Current ( A)

Output Voltage (V)

Output Voltage (V)

48 VS - 0.9

36 VS - 1.2

24 GND + 1.2

12 GND + 0.9

0 GND + 0.6

-12 GND + 0.3

-24 GND
-100 -75 -50 -25 0 25 50 75 100 0 2.5 5 7.5 10
VSENSE (mV) Output Current (mA)
. VS = 2.7 V

Figure 6-21. INA296x5-Q1 Input Bias Current vs VSENSE Figure 6-22. Output Voltage vs Output Current
200
100
Output Impedance ( )

10

0.1

0.01
10 100 1k 10k 100k 1M 10M
Frequency (Hz)
VS = 5 V to 20 V .

Figure 6-23. Output Voltage vs Output Current Figure 6-24. Output Impedance vs Frequency

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6.6 Typical Characteristics (continued)

at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN–, VCM = VIN– = 48 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)

0 20

-0.1 15

Swing to GND (mV)

Swing to VS (V)

-0.2 10

-0.3 5
VS = 2.7V VS = 20V
VS = 5V VS = 5V
VS = 20V VS = 2.7V
-0.4 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature ( C) Temperature ( C)
RL = 10 kΩ to GND VREF1 = VREF2 = 0 V, RL = 10 kΩ to GND
. VSENSE = 0 V

Figure 6-25. Swing to Supply vs Temperature Figure 6-26. Swing to GND vs Temperature
100
Input-Referred Voltage Noise (200 nV/div)
Input-Referred Voltage Noise (nV/ Hz)

80
70
60
50
40

30

20 G = 10
G = 20
G = 50
G = 100
G = 200
10
1 10 100 1k 10k 100k 1M 10M
Frequency (Hz) Time (1 s/div)

Figure 6-27. Input Referred Noise vs Frequency Figure 6-28. 0.1 Hz to 10 Hz Voltage Noise

40
VS = 20V, Sinking
35 VS = 20V, Sourcing
VS = 5V, Sinking
Short Circuit Current (mA)

VS = 5V, Sourcing
30 VS = 2.7V, Sinking
VS = 2.7V, Sourcing
25

20

15

10

5
-50 -25 0 25 50 75 100 125 150
Temperature ( C)
. VSENSE = 0 V

Figure 6-29. Short-Circuit Current vs Temperature Figure 6-30. Quiescent Current vs Temperature

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6.6 Typical Characteristics (continued)

at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN–, VCM = VIN– = 48 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)

3 3

2.8
2.5
Quiescent Current (mA)

Quiescent Current (mA)

2.6
2
2.4

1.5 2.2

2
1
1.8
0.5 125 C VS = 20V
25 C 1.6 VS = 5V
-40 C VS = 2.7V
0 1.4
0 2.5 5 7.5 10 12.5 15 17.5 20 -20 0 20 40 60 80 100 120
Supply Voltage (V) Common-Mode Voltage (V)
VREF1 = VREF2 = 0 V, .
VSENSE = 0 V .

Figure 6-31. Quiescent Current vs Supply Voltage Figure 6-32. Quiescent Current vs Common-Mode Voltage

Common-Mode Input Voltage

Voltage Output Voltage
Common-Mode Voltage (10 V/div)

Output Voltage

Output Voltage (10 mV/div)

Output Voltage (0.2 V/div)

Input Voltage (100 V/div)

Time (2 s/div) Time (500 ns/div)

VCM = -5 V to 110 V, INA296A4-Q1
VSENSE = 0 V .

Figure 6-33. Common-Mode Voltage Fast Transient Pulse Figure 6-34. Small Step Response

Input Voltage
Output Voltage
Supply Voltage (0.5 V/div)

Output Voltage (0.5 V/div)

Output Voltage (0.4 V/div)
Input Voltage (4 mV/div)

Supply Voltage
0V Output Voltage 0V

Time (500 ns/div) Time (5 s/div)

INA296A4-Q1 .

Figure 6-35. Large Step Response Figure 6-36. Start-Up Response

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6.6 Typical Characteristics (continued)

at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN–, VCM = VIN– = 48 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)

Supply Voltage (0.5 V/div)

Output Voltage (0.5 V/div)

Supply Voltage
0V 0V
Output Voltage

Time (20 s/div)

Figure 6-37. Brownout Recovery

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7 Detailed Description
7.1 Overview
The INA296x-Q1 is a high-side, inline, or low-side bidirectional, high-speed current-sense amplifier that offers
a wide common-mode range, precision zero-drift topology, excellent common-mode rejection ratio (CMRR)
and fast slew rate. Different gain versions are available to optimize the output dynamic range based on the
application. The INA296x-Q1 is designed using an architecture that enables low bias currents of 35 µA with a
specified common-mode voltage range from –5 V to 110 V with signal bandwidths up to 1.1 MHz.
7.2 Functional Block Diagram
VS

REF1

REF2
IN+ + +
OUT
IN- ± ±

GND

7.3 Feature Description

7.3.1 Amplifier Input Common-Mode Signal
The INA296x-Q1 supports large input common-mode voltages from –5 V to 110 V. The internal topology of
the INA296x-Q1 allows the common-mode range to exceed the power-supply voltage (VS). This allows for the
INA296x-Q1 to be used for low-side, inline, and high-side current-sensing applications that extend beyond the
supply range of 2.7 V to 20 V.
7.3.1.1 Input-Signal Bandwidth
The INA296x-Q1 is available with several gain options including 10 V/V, 20 V/V, 50 V/V, 100 V/V, and 200 V/V.
The unique multistage design enables the amplifier to achieve high bandwidth of 1.1 MHz at all gains. This high
bandwidth provides the throughput and fast response that is required for the rapid detection and processing of
over-current events.
7.3.1.2 Low Input Bias Current
The INA296x-Q1 inputs draw 35 µA (typical) bias current per input pin at common-mode voltages as high as
110 V, which enables precision current sensing on applications that require lower current leakage. Unlike many
high voltage current sense amplifiers whose input bias currents are proportional to the common-mode voltage,
the input bias current of the INA296x-Q1 remains constant over the entire common-mode voltage range.
7.3.1.3 Low VSENSE Operation
The INA296x-Q1 features high performance operation across the entire valid VSENSE range. The zero-drift input
architecture of the INA296x-Q1 provides the low offset voltage and low offset drift needed to measure low
VSENSE levels accurately across the wide operating temperature of –40°C to +125°C. Low VSENSE operation is
particularly beneficial when using low ohmic shunts for low current measurements, as power losses across the
shunt are significantly reduced.

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7.3.1.4 Wide Fixed Gain Output

The INA296x-Q1 maximum gain error is ±0.01% at room temperature, with a maximum drift of ±1 ppm/°C
over the full temperature range of –40°C to +125°C. The INA296x-Q1 is available in multiple gain options of
10 V/V, 20 V/V, 50 V/V, 100 V/V, and 200 V/V, which the system designer must select based on the desired
signal-to-noise ratio and other system requirements, such as the dynamic current range and full-scale output
voltage target.
7.3.1.5 Wide Supply Range
The INA296x-Q1 operates with a wide supply range from 2.7 V to 20 V. While the input common-mode voltage
range of the INA296x-Q1 is independent of the supply voltage, the output voltage is bound by the supply voltage
applied to the device. The output voltage can range from as low as 20 mV to as high as 200 mV below the
supply voltage.
7.4 Device Functional Modes
7.4.1 Adjusting the Output With the Reference Pins
Figure 7-1 shows a test circuit for reference-divider accuracy. The INA296x-Q1 output is configurable to allow for
unidirectional or bidirectional operation.
VS

VS

IN±
± OUT
+
IN+ REF2

REF1

GND

Figure 7-1. Test Circuit For Reference Divider Accuracy

The output voltage is set by applying a voltage or voltages to the reference voltage inputs, REF1 and REF2. The
reference inputs are connected to an internal gain network. There is no operational difference between the two
reference pins. The resistor network connected to the two reference pins are designed with ultra-precision and
matching. Output is set accurately at the mid-point voltage between the voltages applied to reference voltage
inputs, when current-sense input voltage is 0 V as shown in Equation 1 . In most bidirectional applications, one
reference input is connected to the positive supply and the other reference input is connected to the negative
supply (GND pin) to set the output voltage to mid-supply.

V + V
VOUT = G × VIN + − VIN − + REF1 2 REF2 (1)

7.4.2 Reference Pin Connections for Unidirectional Current Measurements

Unidirectional operation allows current measurements through a resistive shunt in one direction. For
unidirectional operation, connect the device reference pins together and then to the negative rail (see the
Ground Referenced Output section) or the positive rail (see the VS Referenced Output section). The required
differential input polarity depends on the reference input setting. The amplifier output moves away from the
referenced rail proportional to the current passing through the external shunt resistor. If the amplifier reference
pins are connected to the positive rail, then the input polarity must be negative to move the amplifier output down
(towards ground). If the amplifier reference pins are connected to ground, then the input polarity must be positive
to move the amplifier output up (towards supply).

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The following sections describe how to configure the output for unidirectional operation cases.
7.4.2.1 Ground Referenced Output
When using the INA296x-Q1 in a unidirectional mode with a ground referenced output, both reference inputs are
connected to ground. This configuration takes the output to ground when there is a 0 V differential at the input
(see Figure 7-2).
VS

VS

IN±
± OUT
+
IN+ REF2

REF1

GND

Figure 7-2. Ground Referenced Output

7.4.2.2 VS Referenced Output

Unidirectional mode with a VS referenced output is configured by connecting both reference pins to the positive
supply. Use this configuration for circuits that require power up and stabilization of the amplifier output signal and
other control circuitry before power is applied to the load (see Figure 7-3).
VS

VS

IN±
± OUT
+
IN+ REF2

REF1

GND

Figure 7-3. VS Referenced Output

7.4.3 Reference Pin Connections for Bidirectional Current Measurements

The INA296x-Q1 measures the differential voltage developed by current flowing through a resistor, commonly
referred to as a current-sensing resistor or a current-shunt resistor. The INA296x-Q1 can operate in either a
unidirectional or bidirectional mode based on the voltage potential placed on the reference pins.
The linear range of the output stage is limited to how close the output voltage can approach ground as well the
supply voltage as described in the Specifications. The selection of the current-sensing resistor along with the
current range to be measured, selection of the gain option, as well as the voltage applied to the reference pins
must be selected to keep the INA296x-Q1 within the linear region of operation.

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7.4.3.1 Output Set to External Reference Voltage

Connecting both pins together and then to a reference voltage results in an output voltage equal to the reference
voltage for the condition of shorted input pins or a 0 V differential input. Figure 7-4 shows this configuration. The
output voltage decreases below the reference voltage when the IN+ pin is negative relative to the IN– pin and
increases when the IN+ pin is positive relative to the IN– pin. This technique is the most accurate way to bias the
output to a precise voltage.
VS

VS

IN±
± OUT
+
IN+ REF2 REF5025
2.5-V
REF1 Reference

GND

Copyright © 2016, Texas Instruments Incorporated

Figure 7-4. External Reference Output

7.4.3.2 Output Set to Mid-Supply Voltage

By connecting one reference pin to VS and the other to the GND pin, Figure 7-5 shows that the output is set
at half of the supply voltage when there is no differential input. This method creates a ratiometric offset to the
supply voltage, where the output voltage remains at VS / 2 for 0 V applied to the inputs.
VS

VS

IN–
– OUT
Output
+
IN+ REF1

REF2

GND

Figure 7-5. Mid-Supply Voltage Output

7.4.3.3 Output Set to Mid-External Reference

In this case, Figure 7-6 shows how an external reference can divided by two by connecting one REF pin to
ground and the other REF pin to the reference.

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VS

VS

IN–
– OUT
+
IN+ REF1 REF5025
2.5-V
REF2 Reference

GND

Figure 7-6. Mid-External Reference Output

7.4.3.4 Output Set Using Resistor Divider

The INA296x-Q1 reference pins allow for the mid-point of the output voltage to be adjusted for system circuitry
connections to analog to digital converters (ADCs) or other amplifiers. The reference pins are designed to
be connected directly to supply, ground, or a low-impedance reference voltage. The reference pins can be
connected together and biased using a resistor divider to achieve a custom output voltage. If the amplifier
is used in this configuration, as shown in Figure 7-7, use the output as a differential signal with respect to
the resistor divider voltage. Use of the amplifier output as a single-ended signal in this configuration is not
recommended because the internal impedance shifts can adversely affect device performance specifications. If
single-ended measurement is required, TI recommends to use an external op amp to buffer the resistor divider
voltage (see Figure 7-8).
VS

VS
R1

IN±
± OUT
TO ADC+
+ TO ADC±
IN+ REF2

REF1
R2
GND

Figure 7-7. Setting the Reference Using a Resistor Divider

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VS

VS
R1

IN–
– OUT
TO ADC
+
IN+ REF2

REF1
R2
GND

+
–
Op Amp

Figure 7-8. Setting the Reference Using a Resistor Divider and an Op Amp buffer

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7.4.4 High Signal Throughput

With a bandwidth of 1.1 MHz at a gain of 20 V/V and a slew rate of 8 V/µs, the INA296x-Q1 is specifically
designed for detecting and protecting applications from fast inrush currents. As shown in Table 7-1, the INA296x-
Q1 responds in less than 1 µs for a system measuring a 75 A threshold on a 2 mΩ shunt.
Table 7-1. Response Time
PARAMETER EQUATION INA296x-Q1 AT VS = 5 V
G Gain 20 V/V
IMAX Maximum current 100 A
IThreshold Threshold current 75 A
RSENSE Current sense resistor value 2 mΩ
VOUT_MAX Output voltage at maximum current VOUT_MAX = IMAX × RSENSE × G 4V
VOUT_THR Output voltage at threshold current VOUT_THR = ITHR × RSENSE × G 3V
SR Slew rate 8 V/µs
Tresponse Output response time Tresponse= VOUT_THR / SR < 1 µs

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8 Application and Implementation

Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.

8.1 Application Information

The INA296x-Q1 amplifies the voltage developed across a current-sensing resistor as current flows through
the resistor to the load. The wide input common-mode voltage range and high common-mode rejection of the
INA296x-Q1 make the device usable over a wide range of voltage rails while still maintaining an accurate current
measurement.
8.1.1 RSENSE and Device Gain Selection
The accuracy of any current-sense amplifier is maximized by choosing the largest current-sense resistor value
possible. A larger value sense resistor maximizes the differential input signal for a given amount of current
flow and reduces the error contribution of the offset voltage. However, there are practical limits as to how
large the current-sense resistor value can be in a given application because of the physical dimensions of the
package, package construction, and maximum power dissipation. Equation 2 gives the maximum value for the
current-sense resistor for a given power dissipation budget:

PDMAX
RSENSE
IMAX2 (2)

where:
• PDMAX is the maximum allowable power dissipation in RSENSE.
• IMAX is the maximum current that flows through RSENSE.
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing-to-rail limitations. To make sure that the current-sense signal is properly passed
to the output, both positive and negative output swing limitations must be examined. Equation 3 provides the
maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.

IMAX ª RSENSE ª *$,1 < VSP (3)

where:
• IMAX is the maximum current that flows through RSENSE.
• GAIN is the gain of the current-sense amplifier.
• VSP is the positive output swing of the device as specified in the Specifications.
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off
between the value of the sense resistor and the gain of the device under consideration. If the sense resistor
selected for the maximum power dissipation is too large, then selecting a lower gain device is possible to avoid
positive swing limitations.
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.
Equation 4 provides the limit on the minimum value of the sense resistor.

IMIN ª RSENSE ª *$,1 > VSN (4)

where:

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• IMIN is the minimum current that flows through RSENSE.

• GAIN is the gain of the current-sense amplifier.
• VSN is the negative output swing of the device as specified in the Specifications.
Table 8-1 shows an example of the different results obtained from using five different gain versions of the
INA296x-Q1. From the table data, the highest gain device allows a smaller current-shunt resistor and decreased
power dissipation in the element.
Table 8-1. RSENSE Selection and Power Dissipation(1)
RESULTS AT VS = 5 V
PARAMETER EQUATION A1, B1 A2, B2 A3, B3 A4, B4 A5, B5
DEVICES DEVICES DEVICES DEVICES DEVICES
G Gain 10 V/V 20 V/V 50 V/V 100 V/V 200 V/V
VSENSE Ideal differential input voltage VSENSE = VOUT / G 500 mV 250 mV 100 mV 50 mV 25 mV
RSENSE Current sense resistor value RSENSE = VSENSE / IMAX 50 mΩ 25 mΩ 10 mΩ 5 mΩ 2.5 mΩ
PSENSE Current-sense resistor power dissipation RSENSE × IMAX2 5W 2.5 W 1W 0.5 W 0.25 W

(1) Design example with 10 A full-scale current with maximum output voltage set to 5 V.

8.2 Typical Application

The INA296x-Q1 is a bidirectional, current-sense amplifier capable of measuring currents through a resistive
shunt with common-mode voltages from –5 V to +110 V.
8.2.1 Current Sensing in a Solenoid Application
22 V

Control 5V
VS

IN+
OUT
50 m
INA
IN– REF2
REF1
GND

Figure 8-1. Solenoid Drive Application Circuit

8.2.1.1 Design Requirements

In this example application, the common-mode voltage ranges from 0 V to 22 V. The maximum sense current
is 1.25 A, and a 5-V supply is available for the INA296x-Q1. Following the design guidelines from RSENSE and
Device Gain Selection, a RSENSE of 50 mΩ and a gain of 20 V/V are selected to provide good output dynamic
range. Table 8-2 lists the design setup for this application.
Table 8-2. Design Parameters
DESIGN PARAMETERS EXAMPLE VALUE
Power supply voltage 5V
Common mode voltage range 0 V to 22 V
Maximum sense current 1.25 A
RSENSE resistor 50 mΩ

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Table 8-2. Design Parameters (continued)

DESIGN PARAMETERS EXAMPLE VALUE
Gain option 20 V/V

8.2.1.2 Detailed Design Procedure

The INA296x-Q1 is designed to measure current in a typical solenoid application. The INA296x-Q1 measures
current across the 50-mΩ shunt that is placed at the output in series with solenoid. The INA296x-Q1 measures
the differential voltage across the shunt resistor, and the signal is internally amplified with a gain of 20 V/V. The
output of the INA296x-Q1 is connected to the analog-to-digital converter (ADC) of an MCU to digitize the current
measurements.
Solenoid loads are highly inductive and are often prone to failure. Solenoids are often used for position control,
precise fluid control, and fluid regulation. Measuring real-time current on the solenoid continuously can indicate
premature failure of the solenoid, which can lead to a faulty control loop in the system. Measuring high-side
current also indicates if there are any ground faults on the solenoid or the FETs that can be damaged in
an application. The INA296x-Q1, with high bandwidth and slew rate, can be used to detect fast overcurrent
conditions to prevent the solenoid damage from short-to-ground faults.
8.2.1.3 Application Curve
Figure 8-2 shows the output response of a solenoid.
50 1.5
Common-Mode Input Voltage
45 VOUT 1.2

40 0.9
Common-Mode Input Voltage (V)

35 0.6

30 0.3

VOUT (V)
25 0

20 -0.3

15 -0.6

10 -0.9

5 -1.2

0 -1.5

-5 -1.8
Time (100 ms/div)

Figure 8-2. Solenoid Control Current Response

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8.3 Power Supply Recommendations

The INA296x-Q1 makes accurate measurements beyond the connected power-supply voltage (VS) because the
inputs (IN+ and IN–) can operate anywhere between –5 V and +110 V independent of VS. For example, with the
VS power supply equal to 5 V, the common-mode voltage of the measured shunt can be as high as +110 V.
8.3.1 Power Supply Decoupling
Place the power-supply bypass capacitor as close to the supply and ground pins as possible. TI recommends a
bypass capacitor value of 0.1 μF. Additional decoupling capacitance can be added to compensate for noisy or
high-impedance power supplies.
8.4 Layout
8.4.1 Layout Guidelines
Attention to good layout practices is always recommended.
• Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current sense resistor, any additional high-current carrying impedance
can cause significant measurement errors.
• Place the power-supply bypass capacitor as close to the device power supply and ground pins as possible.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
8.4.2 Layout Examples

RSHUNT

IN- 1 8 IN+
CBYPASS
VIA to Ground Plane GND 2 7 REF1 VIA to Ground Plane
INA Device
REF2 3 6 VS VIA to Power Supply

VIA to Ground Plane NC 4 5 OUT

Figure 8-3. INA296x-Q1 SOT-23 (DDF), SOIC (D) and VSSOP (DGK) Package Recommended Layout

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RSHUNT

1 10
IN- IN+

NC 2 9 NC
CBYPASS
VIA to Ground Plane GND 3 8 REF1 VIA to Ground Plane
INA Device
REF2 4 7 VS VIA to Power Supply

VIA to Ground Plane NC 5 6 OUT

Figure 8-4. INA296x-Q1 10-Pin VSSOP (DGS) Package Recommended Layout

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 27

Product Folder Links: INA296A-Q1 INA296B-Q1
INA296A-Q1, INA296B-Q1
SBOSA32B – FEBRUARY 2023 – REVISED MARCH 2024 www.ti.com

9 Device and Documentation Support

9.1 Documentation Support
9.1.1 Related Documentation
For related documentation see the following: Texas Instruments, INA296EVM, EVM user's guide
9.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
9.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
9.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
9.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.

9.6 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.

10 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (August 2023) to Revision B (February 2024) Page

• Updated the number format for tables, figures, and cross-references throughout the document...................... 1
• Deleted the preview note from D package from Package Information table and throughout the data sheet..... 1
• Deleted the preview note about D package information.....................................................................................3

Changes from Revision * (February 2023) to Revision A (August 2023) Page

• Added the DGS package to the data sheet........................................................................................................1
• Changed package information from body size to package size......................................................................... 1
• Deleted preview note from DGK package from package information table........................................................1
• Added the DGS package pin configuration........................................................................................................ 3
• Added DGS package in recommended layout examples................................................................................. 26

28 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: INA296A-Q1 INA296B-Q1

 INA296A-Q1, INA296B-Q1
www.ti.com SBOSA32B – FEBRUARY 2023 – REVISED MARCH 2024

11 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 29

Product Folder Links: INA296A-Q1 INA296B-Q1
 PACKAGE OPTION ADDENDUM

www.ti.com 11-Apr-2024

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

INA296A1QDDFRQ1 ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2ZD3 Samples

INA296A1QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 3A7B Samples

INA296A1QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 296A1Q Samples

INA296A2QDDFRQ1 ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2ZE3 Samples

INA296A2QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 3A8B Samples

INA296A2QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 296A2Q Samples

INA296A3QDDFRQ1 ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2ZF3 Samples

INA296A3QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 3A9B Samples

INA296A3QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 296A3Q Samples

INA296A4QDDFRQ1 ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2ZG3 Samples

INA296A4QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 3AAB Samples

INA296A5QDDFRQ1 ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2ZH3 Samples

INA296A5QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 3ABB Samples

INA296A5QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 296A5Q Samples

INA296B1QDDFRQ1 ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2ZI3 Samples

INA296B1QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 3ACB Samples

INA296B1QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 296B1Q Samples

INA296B2QDDFRQ1 ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2ZJ3 Samples

INA296B2QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 3ADB Samples

INA296B2QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 296B2Q Samples

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 11-Apr-2024

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

INA296B3QDDFRQ1 ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2ZK3 Samples

INA296B3QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 3AEB Samples

INA296B3QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 296B3Q Samples

INA296B4QDDFRQ1 ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2ZL3 Samples

INA296B4QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 3AFB Samples

INA296B5QDDFRQ1 ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2ZM3 Samples

INA296B5QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 3AGB Samples

INA296B5QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 296B5Q Samples

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

Addendum-Page 2
 PACKAGE OPTION ADDENDUM

www.ti.com 11-Apr-2024

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF INA296A-Q1, INA296B-Q1 :

• Catalog : INA296A, INA296B

NOTE: Qualified Version Definitions:

• Catalog - TI's standard catalog product

Addendum-Page 3
 PACKAGE MATERIALS INFORMATION

www.ti.com 12-Apr-2024

TAPE AND REEL INFORMATION

REEL DIMENSIONS TAPE DIMENSIONS

K0 P1

B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2 Q1 Q2

Q3 Q4 Q3 Q4 User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA296A1QDDFRQ1 SOT-23- DDF 8 3000 180.0 8.4 3.15 3.1 1.55 4.0 8.0 Q3
THIN
INA296A1QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA296A1QDRQ1 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
INA296A2QDDFRQ1 SOT-23- DDF 8 3000 180.0 8.4 3.15 3.1 1.55 4.0 8.0 Q3
THIN
INA296A2QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA296A2QDRQ1 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
INA296A3QDDFRQ1 SOT-23- DDF 8 3000 180.0 8.4 3.15 3.1 1.55 4.0 8.0 Q3
THIN
INA296A3QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA296A3QDRQ1 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
INA296A4QDDFRQ1 SOT-23- DDF 8 3000 180.0 8.4 3.15 3.1 1.55 4.0 8.0 Q3
THIN
INA296A4QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA296A5QDDFRQ1 SOT-23- DDF 8 3000 180.0 8.4 3.15 3.1 1.55 4.0 8.0 Q3
THIN

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 12-Apr-2024

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1

Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA296A5QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA296A5QDRQ1 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
INA296B1QDDFRQ1 SOT-23- DDF 8 3000 180.0 8.4 3.15 3.1 1.55 4.0 8.0 Q3
THIN
INA296B1QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA296B1QDRQ1 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
INA296B2QDDFRQ1 SOT-23- DDF 8 3000 180.0 8.4 3.15 3.1 1.55 4.0 8.0 Q3
THIN
INA296B2QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA296B2QDRQ1 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
INA296B3QDDFRQ1 SOT-23- DDF 8 3000 180.0 8.4 3.15 3.1 1.55 4.0 8.0 Q3
THIN
INA296B3QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA296B3QDRQ1 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
INA296B4QDDFRQ1 SOT-23- DDF 8 3000 180.0 8.4 3.15 3.1 1.55 4.0 8.0 Q3
THIN
INA296B4QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA296B5QDDFRQ1 SOT-23- DDF 8 3000 180.0 8.4 3.15 3.1 1.55 4.0 8.0 Q3
THIN
INA296B5QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA296B5QDRQ1 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

Pack Materials-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 12-Apr-2024

TAPE AND REEL BOX DIMENSIONS

Width (mm)
H
W

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA296A1QDDFRQ1 SOT-23-THIN DDF 8 3000 210.0 185.0 35.0
INA296A1QDGKRQ1 VSSOP DGK 8 2500 356.0 356.0 35.0
INA296A1QDRQ1 SOIC D 8 2500 340.5 336.1 25.0
INA296A2QDDFRQ1 SOT-23-THIN DDF 8 3000 210.0 185.0 35.0
INA296A2QDGKRQ1 VSSOP DGK 8 2500 356.0 356.0 35.0
INA296A2QDRQ1 SOIC D 8 2500 340.5 336.1 25.0
INA296A3QDDFRQ1 SOT-23-THIN DDF 8 3000 210.0 185.0 35.0
INA296A3QDGKRQ1 VSSOP DGK 8 2500 356.0 356.0 35.0
INA296A3QDRQ1 SOIC D 8 2500 340.5 336.1 25.0
INA296A4QDDFRQ1 SOT-23-THIN DDF 8 3000 210.0 185.0 35.0
INA296A4QDGKRQ1 VSSOP DGK 8 2500 356.0 356.0 35.0
INA296A5QDDFRQ1 SOT-23-THIN DDF 8 3000 210.0 185.0 35.0
INA296A5QDGKRQ1 VSSOP DGK 8 2500 356.0 356.0 35.0
INA296A5QDRQ1 SOIC D 8 2500 340.5 336.1 25.0
INA296B1QDDFRQ1 SOT-23-THIN DDF 8 3000 210.0 185.0 35.0
INA296B1QDGKRQ1 VSSOP DGK 8 2500 356.0 356.0 35.0
INA296B1QDRQ1 SOIC D 8 2500 340.5 336.1 25.0
INA296B2QDDFRQ1 SOT-23-THIN DDF 8 3000 210.0 185.0 35.0

Pack Materials-Page 3
 PACKAGE MATERIALS INFORMATION

www.ti.com 12-Apr-2024

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA296B2QDGKRQ1 VSSOP DGK 8 2500 356.0 356.0 35.0
INA296B2QDRQ1 SOIC D 8 2500 340.5 336.1 25.0
INA296B3QDDFRQ1 SOT-23-THIN DDF 8 3000 210.0 185.0 35.0
INA296B3QDGKRQ1 VSSOP DGK 8 2500 356.0 356.0 35.0
INA296B3QDRQ1 SOIC D 8 2500 340.5 336.1 25.0
INA296B4QDDFRQ1 SOT-23-THIN DDF 8 3000 210.0 185.0 35.0
INA296B4QDGKRQ1 VSSOP DGK 8 2500 356.0 356.0 35.0
INA296B5QDDFRQ1 SOT-23-THIN DDF 8 3000 210.0 185.0 35.0
INA296B5QDGKRQ1 VSSOP DGK 8 2500 356.0 356.0 35.0
INA296B5QDRQ1 SOIC D 8 2500 340.5 336.1 25.0

Pack Materials-Page 4
 PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT

SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1

.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]

4X (0 -15 )

4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4

.005-.010 TYP
[0.13-0.25]

4X (0 -15 )

SEE DETAIL A
.010
[0.25]

.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]

4214825/C 02/2019

NOTES:

1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.

www.ti.com
 EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8

8X (.024)
[0.6] SYMM

(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE:8X

SOLDER MASK SOLDER MASK

METAL METAL UNDER
OPENING OPENING SOLDER MASK

EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED

SOLDER MASK DETAILS

4214825/C 02/2019

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
 EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )
[1.55] SYMM

1
8

8X (.024)
[0.6] SYMM

(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]

SOLDER PASTE EXAMPLE

BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X

4214825/C 02/2019

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.

www.ti.com
 PACKAGE OUTLINE
DDF0008A SCALE 4.000
SOT-23 - 1.1 mm max height
PLASTIC SMALL OUTLINE

C
2.95 SEATING PLANE
TYP
2.65

A PIN 1 ID 0.1 C
AREA

6X 0.65
8
1

2.95
2.85 2X
NOTE 3 1.95

4
5
0.38
8X
0.22
1.65 0.1 C A B
B 1.1 MAX
1.55

0.20
TYP
0.08

SEE DETAIL A

0.25
GAGE PLANE

0.1
0 -8 0.6 0.0
0.3
DETAIL A
TYPICAL

4222047/C 10/2022

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.

www.ti.com
 EXAMPLE BOARD LAYOUT
DDF0008A SOT-23 - 1.1 mm max height
PLASTIC SMALL OUTLINE

8X (1.05)
SYMM
1
8

8X (0.45)
SYMM

6X (0.65)
5
4

(R0.05)
TYP (2.6)

LAND PATTERN EXAMPLE

SCALE:15X

SOLDER MASK METAL UNDER SOLDER MASK

METAL OPENING
OPENING SOLDER MASK

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED

SOLDER MASK DETAILS

4222047/C 10/2022
NOTES: (continued)

4. Publication IPC-7351 may have alternate designs.

5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
 EXAMPLE STENCIL DESIGN
DDF0008A SOT-23 - 1.1 mm max height
PLASTIC SMALL OUTLINE

8X (1.05) SYMM
(R0.05) TYP
1
8

8X (0.45)
SYMM

6X (0.65)
5
4

(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL
SCALE:15X

4222047/C 10/2022
NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.

www.ti.com
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