Report 3 Solar IV CV Characteristics
Report 3 Solar IV CV Characteristics
• Constant Current Source The current-voltage relationship of the solar cell can
be described using the diode equation:
• Schering bridge setup with RF generator
qV
• MLCC and Disk Ceramic capacitors I = Idark − Ilight = I0 e nkT − 1 − Ilight (3)
• Inductors (50 mH) and Capacitors (50 and 150 nF) where I0 is the dark saturation current, V is the voltage
across the terminals of the solar cell, n is the ideality
• Heating Oven factor, and Ilight is the light-generated current.
A. I-V Characteristics of Solar Cell The short-circuit current ISC can be obtained by set-
ting V = 0 in the diode equation.
tionPhotovoltaic Effect and Semiconductor Properties The open-circuit voltage VOC corresponds to the volt-
The photovoltaic effect generates electron-hole pairs age across the solar cell when the current is zero.
within the semiconductor material, which can be quan-
The fill factor F F can be calculated as:
tified by the number of electron-hole pairs generated per
unit time and unit volume, denoted as G. Pmax
The generation rate G can be expressed as: FF = (4)
VOC × ISC
G = αIlight (1) where Pmax is the maximum power output of the solar
cell.
where α is the absorption coefficient of the semiconductor
material and Ilight is the intensity of incident light. The efficiency η of the solar cell can be determined
using the formula:
Pout
1. Establishment of Potential Difference η= (5)
Pin
The potential difference Vbi across the depletion region where Pout is the electrical power output from the solar
of the p-n junction is related to the built-in potential Vbi , cell and Pin is the incident solar power.
2
Figure 1
Figure 2
B. C-V Characteristics of Solar Cell
ϵs ϵ0 A
C= (7)
When a p-n junction is reverse biased, the width of the xd
depletion region (xd ) is given by:
where:
s
2ϵs ϵ0 (VDC + Vbi ) A is the area of the p-n junction.
xd = (6)
qNd
R R
VDU T = −( VDC + VAC ) (9)
R1 RAC
where:
CDU T 1
Vout = VDU T q (10)
CF 1 + (ωRF1CF )2
4
IV. OBSERVATIONS:
Table II: Normalised P-V Data of Solar Cell exposed under Sunlight (i)
Table III: Normalised P-V Data of Solar Cell exposed under Sunlight (ii)
Table IV: Normalised I-V Data of Solar Cell exposed under Incandescent Light
Table V: Normalised P-V Data of Solar Cell exposed under Incandescent Light (i)
Table VI: Normalised P-V Data of Solar Cell exposed under Incandescent Light (i)
V DC (V) V OUT (Dark) (V) V DUT(mV) DC V DUT (V) AC V OUT (Light) (V) V DUT(mV) DC V DUT (V) AC
0 0.113 1.3 0.028 0.545 1.2 0.035
0.1 0.111 -131.2 0.042 0.544 -97 0.042
0.2 0.108 -240 0.042 0.543 -195 0.042
0.3 0.106 -328 0.042 0.54 -373 0.042
0.4 0.105 -430 0.042 0.541 -446 0.042
0.5 0.103 -512 0.042 0.542 -501 0.042
0.6 0.102 -614 0.042 0.542 -600 0.042
0.7 0.1 -741 0.042 0.542 -724 0.042
0.8 0.099 -825 0.042 0.542 -816 0.042
0.9 0.097 -912 0.042 0.542 -922 0.042
1 0.096 -975 0.042 0.541 -1000 0.042
1.1 0.094 -1157 0.042 0.542 -1115 0.042
1.2 0.093 -1206 0.042 0.541 -1270 0.042
1.3 0.092 -1334 0.042 0.541 -1326 0.042
1.4 0.091 -1383 0.042 0.541 -1390 0.042
1.5 0.09 -1525 0.042 0.542 -1572 0.042
1.6 0.089 -1590 0.042 0.541 -1632 0.042
1.7 0.088 -1690 0.042 0.541 -1703 0.042
1.8 0.087 -1827 0.042 0.541 -1820 0.042
1.9 0.086 -1905 0.042 0.541 -1967 0.042
2 0.085 -2017 0.042 0.541 -2046 0.042
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V. GRAPHS:
Figure 4: I-V & P-V Curves of Solar Cell under Sunlight with various Filters. Legend of plot matches with filter
colour, Black Indicates No Filter.
B. Normalised I-V & P-V Curves of Solar Cell under Incandescent Light
Figure 5: I-V & P-V Curves of Solar Cell under Sunlight with various Filters. Legend of plot matches with filter
colour, Black Indicates No Filter.
10
2
Figure 6: 1/CDU T vs VDC , C-V characteristics
VI. CALCULATION AND ERROR ANALYSIS: – Area of the solar cell = 100 cm2
– Therefore, doping density is given by Nd =
1. The computations are incorporated alongside the 1.7869 × 1013
observation plots. – Uncertainty in Nd = 1.3286 × 1013
2. We apply the formula for linear regression to es- – Biasing voltage Vbi = -2.46833 V
2
timate the regression values of the graph 1/CDU T – Uncertainty in biasing voltage ∆Vbi = -1.0397
versus VDC . V
VII. RESULTS,INFERENCE AND
The general formula for linear regression is: CONCLUSION:
X X
Yi = nA + B( Xi ) (11)
• Our analysis involves determining the doping den-
sity and biasing voltage of the solar cell by exam-
X X X ining its measured C-V characteristics. Addition-
Xi Yi = A( Xi ) + B( Xi 2 ) (12) ally, we conduct a qualitative assessment of how
the solar cell’s performance varies with frequency
by studying its I-V characteristics.
The uncertainty in the value of Y is given as follows: • It’s essential to note that the I-V characteristics
cannot reliably infer results due to the readings be-
r ing taken under sunlight, which varies in intensity
X (Ymean − Yi )2
δy = ( ) (13) and frequency depending on factors such as time of
N −2 day and location on Earth.
Now, we can compute the uncertainties in the slope • However, by normalizing both current and voltage
and intercept to be to 1, we can qualitatively observe that frequencies
s near the middle of the spectrum, such as yellow
and green, demonstrate maximum power output
P 2
X
δA = δy P 2 P (14) under both sunlight and incandescent light. Con-
((N X ) − ( X)2 )
versely, no discernible pattern emerges when av-
eraging measurements across different frequencies
s without a filter.
N
δB = δy (15)
• Utilizing C-V characteristics, we determine the
P P
((N X 2)− ( X)2 )
doping density of the solar cell to be on the or-
der of 1013 , with its biasing voltage estimated at
approximately −2.5 V. We compute the associated
r
Σi (Ymean − Yi )
σ= (16) error using both propagation and least square fit
N −1
methods, both of which yield an error margin of
Thus, the uncertainties are: about 50%.
• For 1/CDU
2
T versus VDC
VIII. REFERENCES:
17
– Slope (B) = 6.6694 × 10
• Introduction to Solid State Physics – C. Kittel, Wi-
– ∆B = 4.959 × 1017
ley Eastern Limited (5th Edition).
– Intercept (A) = −2.7202 × 1017