SN 65 Lvds 1
SN 65 Lvds 1
Simplified Schematic
VSUPPLY VCC
SN65LVDS1 SN65LVDT2
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN65LVDS1, SN65LVDS2, SN65LVDT2
SLLS373L – JULY 1999 – REVISED DECEMBER 2014 www.ti.com
Table of Contents
1 Features .................................................................. 1 9.2 Functional Block Diagram ....................................... 14
2 Applications ........................................................... 1 9.3 Feature Description................................................. 14
3 Description ............................................................. 1 9.4 Device Functional Modes........................................ 17
4 Revision History..................................................... 2 10 Application and Implementation........................ 19
10.1 Application Information.......................................... 19
5 Device Options....................................................... 3
10.2 Typical Applications .............................................. 19
6 Pin Configuration and Functions ......................... 3
11 Power Supply Recommendations ..................... 26
7 Specifications......................................................... 4
7.1 Absolute Maximum Ratings ...................................... 4 12 Layout................................................................... 26
12.1 Layout Guidelines ................................................. 26
7.2 ESD Ratings.............................................................. 4
12.2 Layout Example .................................................... 30
7.3 Recommended Operating Conditions....................... 4
7.4 Thermal Information .................................................. 5 13 Device and Documentation Support ................. 32
7.5 Driver Electrical Characteristics ................................ 5 13.1 Device Support...................................................... 32
7.6 Receiver Electrical Characteristics ........................... 6 13.2 Documentation Support ....................................... 32
7.7 Driver Switching Characteristics ............................... 6 13.3 Related Links ........................................................ 32
7.8 Receiver Switching Characteristics........................... 7 13.4 Trademarks ........................................................... 32
7.9 Typical Characteristics .............................................. 8 13.5 Electrostatic Discharge Caution ............................ 32
13.6 Glossary ................................................................ 32
8 Parameter Measurement Information ................ 10
9 Detailed Description ............................................ 14 14 Mechanical, Packaging, and Orderable
Information ........................................................... 32
9.1 Overview ................................................................. 14
4 Revision History
Changes from Revision K (November 2008) to Revision L Page
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
5 Device Options
VCC 1 5 D VCC 1 5 R
GND 2 GND 2
Z 3 4 Y A 3 4 B
SN65LVDS1
D Package
(TOP VIEW)
VCC 1 8 Z
D 2 7 Y
NC 3 6 NC
GND 4 5 NC
B 1 8 VCC
A 2 7 R
NC 3 6 NC
NC 4 5 GND
110-W Resistor for LVDT Only
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
PARAMETER MIN MAX UNIT
(2)
Supply voltage range, VCC –0.5 4 V
(A or B) –0.5 4 V
Input voltage range, VI
(D) –0.5 VCC + 2 V
Output voltage, VO (Y or Z) –0.5 4 V
Differential input voltage magnitude, |VID| SN65LVDT2 only 1 V
Receiver output current, IO –12 12 mA
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages are with respect to network ground terminal.
(1) Test method based upon JEDEC Standard 22, Test Method A114-A. Bus pins stressed with respect to GND and VCC separately.
(2) Test method based upon JEDEC Standard 22, Test Method A114-A.
(3) Test method based upon EIA-JEDEC JESD22-C101C.
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(1) The algebraic convention, in which the least positive (most negative) limit is designated as a minimum, is used in this data sheet.
(2) All typical values are at 25°C and with a 3.3-V supply.
(1) The algebraic convention, in which the least positive (most negative) limit is designated as a minimum, is used in this data sheet.
(2) All typical values are at 25°C and with a 2.7-V supply.
(1) All typical values are at 25°C and with a 3.3-V supply.
(2) tsk(p) is the magnitude of the time difference between the high-to-low and low-to-high propagation delay times at an output.
(1) All typical values are at 25°C and with a 2.7-V supply.
(2) tsk(p) is the magnitude of the time difference between the high-to-low and low-to-high propagation delay times at an output.
2.6 1.9
VCC = 2.4 V VCC = 2.4 V
2.4 1.8
t PHL − Driver High-to-Low Propagation
Delay Times − ns
1.6
2 VCC = 2.7 V VCC = 3.6 V
1.5
1.8
VCC = 3.3 V
1.4 VCC = 3.3 V
1.6 VCC = 3 V
VCC = 3.6 V 1.3
1.4
1.2
1.2 1.1
1 1
−40 −20 0 20 40 60 80 100 −40 −20 0 20 40 60 80 100
TA − Free-Air Temperature − °C TA − Free-Air Temperature − °C
Figure 1. Driver High-to-Low Level Propagation Delay Times Figure 2. Driver Low-to-High Level Propagation Delay Times
vs Free-Air Temperature vs Free-Air Temperature
4 4
3.5 3.5
3 3
2.5 2.5
VCC = 3.3 V VCC = 2.7 V
2 2
1.5 1.5
VCC = 2.7 V VCC = 3.3 V
1 1
0.5 0.5
0 0
−70 −60 −50 −40 −30 −20 −10 0 0 10 20 30 40 50 60 70
IOH − High-Level Output Current − mA IOL − Low-Level Output Current − mA
Figure 3. Receiver High-Level Output Voltage vs High-Level Figure 4. Receiver Low-Level Output Voltage vs Low-Level
Output Current Output Current
2.9 3
t PLH − Receiver Low-to-High Level Propagation
t PHL − Receiver High-to-Low level Propagation
Delay time s − ns
2.7
2.7 VCC = 3.6 V
2.6 2.5
VCC = 3 V
2.55 VCC = 3 V
2.4
2.5 VCC = 2.7 V
VCC = 2.7 V
2.3
2.45
2.4 2.2
−40 −20 0 20 40 60 80 −40 −20 0 20 40 60 80 100
TA − Free-Air Temperature − °C TA − Free-Air Temperature − °C
Figure 5. Receiver High-to-Low Level Propagation Delay Figure 6. Receiver Low-to-High Level Propagation Delay
Times vs Free-Air Temperature Times vs Free-Air Temperature
800
600 Fall Time
Fall Time
600
400
400
200
200
0 0
0 5 10 15 20 25 0 5 10 15 20 25
CL − Capacitive Load − pF CL − Capacitive Load − pF
Figure 7. Rise or Fall Time vs Capacitive Load Figure 8. Rise or Fall Time vs Capacitive Load
II Y
D
VOD V )V
IOZ OY OZ
VOY 2
Z
VI VOC
VOZ
Input VI 1V
Z
50 pF
VOC
VOC(PP)
VOC(SS)
VOC
A. All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, pulse repetition rate
(PRR) = 0.5 Mpps, pulse width = 500 ± 10 ns. CL includes instrumentation and fixture capacitance within 0.06 mm of
the device under test. The measurement of VOC(PP) is made on test equipment with a –3dB bandwidth of at least 300
MHz.
Figure 10. Driver Test Circuit and Definitions for the Driver Common-Mode Output Voltage
IIA
A
IO
V )V R
IA IB VID
2 IIB
VIA
VIC B VO
VIB
1000 Ω VO
+ 10 pF,
VIC
− 2 Places
15 pF
VO
100 mV
VID
0V
VIT−
VO
NOTE: Input signal of 3 Mpps, duration of 167 ns, and transition time of <1 ns.
Figure 12. VIT+ and VIT– Input Voltage Threshold Test Circuit and Definitions
Y
VOD 100 Ω
Input
±1%
Z
CL = 10 pF
(2 Places)
2V
Input 1.4 V or 1.2 V (see Note B)
0.8 V
tPLH tPHL
100%
80%
VOD(H)
Output
0V
VOD(L)
20%
0%
tf tr
A. All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, pulse repetition rate
(PRR) = 50 Mpps, pulse width = 10 ± 0.2 ns. CL includes instrumentation and fixture capacitance within 0.06 mm of
the device under test.
B. This point is 1.4 V with VCC = 3.3 V or 1.2 V with VCC = 2.7 V.
Figure 13. Driver Test Circuit, Timing, and Voltage Definitions for the Differential Output Signal
VID
VIA
CL VO
VIB 10 pF
VIA 1.4 V
VIB 1V
VID 0.4 V
0V
−0.4 V
tPHL tPLH
VO VOH
80%
0.45 VCC
20%
VOL
tf tr
A. All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, pulse repetition rate
(PRR) = 50 Mpps, pulse width = 10 ± 0.2 ns. CL includes instrumentation and fixture capacitance within 0.06 m of the
device under test.
9 Detailed Description
9.1 Overview
The SN65LVDS1 device is a single-channel, low-voltage differential signaling (LVDS) line driver. It operates from
a single supply that is nominally 3.3 V, but can be as low as 2.4 V and as high as 3.6 V. The input signal to the
SN65LVDS1 is an LVTTL signal. The output of the device is a differential signal complying with the LVDS
standard (TIA/EIA-644). The differential output signal operates with a signal level of 340 mV, nominally, at a
common-mode voltage of 1.2 V. This low differential output voltage results in a low emitted radiated energy,
which is dependent on the signal slew rate. The differential nature of the output provides immunity to common-
mode coupled signals that the driven signal may experience.
The SN65LVDS1 device is intended to drive a 100-Ω transmission line. This transmission line may be a printed-
circuit board (PCB) or cabled interconnect. With transmission lines, the optimum signal quality and power
delivery is reached when the transmission line is terminated with a load equal to the characteristic impedance of
the interconnect. Likewise, the driven 100-Ω transmission line should be terminated with a matched resistance.
The SN65LVDS2 device is a single-channel LVDS line receiver. It also operates from a single supply that is
nominally 3.3 V, but can be as low as 2.4 V and as high as 3.6 V. The input signal to the SN65LVDS2 is a
differential LVDS signal. The output of the device is a LVTTL digital signal. This LVDS receiver requires ±100 mV
of input signal to determine the correct state of the received signal compliant LVDS receivers can accept input
signals with a common-mode range between 0.05 V and 2.35 V. As the common-mode output voltage of an
LVDS driver is 1.2 V, the SN65LVDS2 correctly determines the line state when operated with a 1-V ground shift
between driver and receiver.
The SN65LVDT2 device is also a single-channel LVDS receiver. This device differs from the SN65LVDS2 in that
it incorporates an integrated termination resistor along with the receiver. This termination would take the place of
the matched load line termination mentioned above. The SN65LVDT2 can be used in a point-to-point system or
in a multidrop system when it is the last receiver on the multidrop bus. The SN65LVDT2 device should not be
used at every node in a multidrop system as this would change the loaded bus impedance throughout the bus
resulting in multiple reflections and signal distortion.
Y
A
D R
B
Z
9.3.1.4 NC Pins
NC (not connected) pins are pins where the die is not physically connected to the lead frame or package. For
optimum thermal performance, a good rule of thumb is to ground the NC pins at the board level.
VCC
50 W 5W
D Input 10 kW Y or Z Output
7V
300 kW 7V
S0313-02
VCC
300 kΩ 300 kΩ
Rt = 100 Ω (Typ)
Y
B
VIT ≈ 2.3 V
It is only under these conditions that the output of the receiver is valid with less than a 100-mV differential input
voltage magnitude. The presence of the termination resistor, Rt does not affect the fail-safe function as long as it
is connected as shown in Figure 16. Other termination circuits may allow a dc-current to ground that could defeat
the pullup currents from the receiver and the fail-safe feature.
VCC VCC
300 kΩ 300 kΩ
5Ω
7V
7V 7V
9.3.2.6 NC Pins
NC (not connected) pins are pins where the die is not physically connected to the lead frame or package. For
optimum thermal performance, a good rule of thumb is to ground the NC pins at the board level.
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
A point-to-point communications channel has a single transmitter (driver) and a single receiver. This
communications topology is often referred to as simplex. In Figure 18 the driver receives a single-ended input
signal and the receiver outputs a single-ended recovered signal. The LVDS driver converts the single-ended
input to a differential signal for transmission over a balanced interconnecting media of 100-Ω characteristic
impedance. The conversion from a single-ended signal to an LVDS signal retains the digital data payload while
translating to a signal whose features are more appropriate for communication over extended distances or in a
noisy environment.
12 Layout
On the other hand, striplines are traces between two ground planes. Striplines are less prone to emissions and
susceptibility problems because the reference planes effectively shield the embedded traces. However, from the
standpoint of high-speed transmission, juxtaposing two planes creates additional capacitance. TI recommends
routing LVDS signals on microstrip transmission lines, if possible. The PCB traces allow designers to specify the
necessary tolerances for ZO based on the overall noise budget and reflection allowances. Footnotes 1, 2, and 3
provide formulas for ZO and tPD for differential and single-ended traces. (1) (2) (3)
(1) Howard Johnson & Martin Graham.1993. High Speed Digital Design – A Handbook of Black Magic. Prentice Hall PRT. ISBN number
013395724.
(2) Mark I. Montrose. 1996. Printed Circuit Board Design Techniques for EMC Compliance. IEEE Press. ISBN number 0780311310.
(3) Clyde F. Coombs, Jr. Ed, Printed Circuits Handbook, McGraw Hill, ISBN number 0070127549.
26 Submit Documentation Feedback Copyright © 1999–2014, Texas Instruments Incorporated
NOTE
The separation between layers 2 and 3 should be 127 μm (0.005 in). By keeping the
power and ground planes tightly coupled, the increased capacitance acts as a bypass for
transients.
One of the most common stack configurations is the six-layer board, as shown in Figure 27.
In this particular configuration, it is possible to isolate each signal layer from the power plane by at least one
ground plane. The result is improved signal integrity; however, fabrication is more expensive. Using the 6-layer
board is preferable, because it offers the layout designer more flexibility in varying the distance between signal
layers and referenced planes, in addition to ensuring reference to a ground plane for signal layers 1 and 6.
Figure 28. 3-W Rule for Single-Ended and Differential Traces (Top View)
You should exercise caution when using autorouters, because they do not always account for all factors affecting
crosstalk and signal reflection. For instance, it is best to avoid sharp 90° turns to prevent discontinuities in the
signal path. Using successive 45° turns tends to minimize reflections.
Bypass capacitors should be placed close to VDD pins. They can be placed conveniently near the corners or
underneath the package to minimize the loop area. This extends the useful frequency range of the added
capacitance. Small-physical-size capacitors, such as 0402 or even 0201, or X7R surface-mount capacitors
should be used to minimize body inductance of capacitors. Each bypass capacitor is connected to the power and
ground plane through vias tangent to the pads of the capacitor as shown in Figure 30(a).
An X7R surface-mount capacitor of size 0402 has about 0.5 nH of body inductance. At frequencies above 30
MHz or so, X7R capacitors behave as low-impedance inductors. To extend the operating frequency range to a
few hundred MHz, an array of different capacitor values like 100 pF, 1 nF, 0.03 μF, and 0.1 μF are commonly
used in parallel. The most effective bypass capacitor can be built using sandwiched layers of power and ground
at a separation of 2 to 3 mils. With a 2-mil FR4 dielectric, there is approximately 500 pF per square inch of PCB.
Refer back to Figure 5-1 for some examples. Many high-speed devices provide a low-inductance GND
connection on the backside of the package. This center dap must be connected to a ground plane through an
array of vias. The via array reduces the effective inductance to ground and enhances the thermal performance of
the small Surface Mount Technology (SMT) package. Placing vias around the perimeter of the dap connection
ensures proper heat spreading and the lowest possible die temperature. Placing high-performance devices on
opposing sides of the PCB using two GND planes (as shown in Figure 20) creates multiple paths for heat
transfer. Often thermal PCB issues are the result of one device adding heat to another, resulting in a very high
local temperature. Multiple paths for heat transfer minimize this possibility. In many cases the GND dap that is so
important for heat dissipation makes the optimal decoupling layout impossible to achieve due to insufficient pad-
to-dap spacing as shown in Figure 30(b). When this occurs, placing the decoupling capacitor on the backside of
the board keeps the extra inductance to a minimum. It is important to place the VDD via as close to the device pin
as possible while still allowing for sufficient solder mask coverage. If the via is left open, solder may flow from the
pad and into the via barrel. This will result in a poor solder connection.
This configuration lays out alternating signal traces on different layers; thus, the horizontal separation between
traces can be less than 2 or 3 times the width of individual traces. To ensure continuity in the ground signal path,
TI recommends having an adjacent ground via for every signal via, as shown in Figure 32. Note that vias create
additional capacitance. For example, a typical via has a lumped capacitance effect of 1/2 pF to 1 pF in FR4.
13.4 Trademarks
Rogers is a trademark of Rogers Corporation.
All other trademarks are the property of their respective owners.
13.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 10-Dec-2020
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
SN65LVDS1D ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 LVDS1
SN65LVDS1DBVR ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SAAI
SN65LVDS1DBVRG4 ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SAAI
SN65LVDS1DBVT ACTIVE SOT-23 DBV 5 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SAAI
SN65LVDS1DBVTG4 ACTIVE SOT-23 DBV 5 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SAAI
SN65LVDS1DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 LVDS1
SN65LVDS2DBVR ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SABI
SN65LVDS2DBVRG4 ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SABI
SN65LVDS2DBVT ACTIVE SOT-23 DBV 5 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SABI
SN65LVDS2DBVTG4 ACTIVE SOT-23 DBV 5 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SABI
SN65LVDS2DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 LVDS2
SN65LVDT2DBVR ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SACI
SN65LVDT2DBVRG4 ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SACI
SN65LVDT2DBVT ACTIVE SOT-23 DBV 5 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SACI
SN65LVDT2DBVTG4 ACTIVE SOT-23 DBV 5 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SACI
SN65LVDT2DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 LVDT2
(1)
The marketing status values are defined as follows:
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
TUBE
Pack Materials-Page 3
PACKAGE OUTLINE
DBV0005A SCALE 4.000
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
C
3.0
2.6 0.1 C
1.75 1.45
B A
1.45 0.90
PIN 1
INDEX AREA
1 5
2X 0.95 (0.1)
3.05
2.75
1.9 1.9
2
(0.15)
4
3
0.5
5X
0.3
0.15
0.2 C A B NOTE 5 (1.1) TYP
0.00
0.25
GAGE PLANE 0.22
TYP
0.08
8
TYP 0.6
0 TYP SEATING PLANE
0.3
4214839/G 03/2023
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.25 mm per side.
5. Support pin may differ or may not be present.
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EXAMPLE BOARD LAYOUT
DBV0005A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
2X (0.95)
3 4
SOLDER MASK
SOLDER MASK METAL METAL UNDER OPENING
OPENING SOLDER MASK
4214839/G 03/2023
NOTES: (continued)
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EXAMPLE STENCIL DESIGN
DBV0005A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
2 (1.9)
2X(0.95)
3 4
(R0.05) TYP
(2.6)
4214839/G 03/2023
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1
.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]
4X (0 -15 )
4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND
4214825/C 02/2019
NOTES: (continued)
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EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55] SYMM
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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