Shenzhen Tuofeng Semiconductor Technology Co.

, Ltd
4803

4803
Dual P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The 4803 uses advanced trench technology to VDS (V) = -30V

provide excellent RDS(ON) with low gate charge. This ID = -5 A (VGS = -10V)
device is suitable for use as a load switch or in PWM RDS(ON) < 52mΩ (VGS = -10V)
applications. Standard Product 4803 is Pb-free RDS(ON) < 87mΩ (VGS = -4.5V)
(meets ROHS & Sony 259 specifications). AO4803
is a Green Product ordering option. 4803 is
electrically identical.

SOIC-8 D1 D2
Top View

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 G2
G1 4 5 D1
S1 S2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C -5
Current A ID A
B
Pulsed Drain Current IDM -20
TA=25°C 2
PD W
Power Dissipation A TA=70°C 1.4
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 35 40 °C/W
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4803
Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -100
IDSS Zero Gate Voltage Drain Current nA

IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA

VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 -1.8 -2.2 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 A
VGS=-10V, ID=5.0A 47 52
mΩ
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A 82 87 mΩ
gFS Forward Transconductance VDS=-5V, ID=-5A 6 8.6 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.77 -1 V
IS Maximum Body-Diode Continuous Current -2.8 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 700 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 120 pF
Crss Reverse Transfer Capacitance 75 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 10 Ω
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V) 14.7 nC
Qg (4.5V) Total Gate Charge (4.5V) 7.6 nC
VGS=-10V, VDS=-15V, ID=-5A
Qgs Gate Source Charge 2 nC
Qgd Gate Drain Charge 3.8 nC
tD(on) Turn-On DelayTime 8.3 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=3Ω, 5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 29 ns
tf Turn-Off Fall Time 14 ns
trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 23.5 ns
Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 13.4 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev5: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 10
-10V -5V
-6V
-4.5V 8 VDS=-5V
15
-4V
6
-ID (A)

-ID(A)
10
-3.5V
4 125°C

5 VGS=-3V
2
25°C
-2.5V
0 0
0.00 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

100 1.60E+00
VGS=-4.5V
Normalized On-Resistance

80 1.40E+00 VGS=-10V
VGS=-4.5V
RDS(ON) (mΩ)

60 1.20E+00
VGS=-10V

40 1.00E+00 ID=-5A

20 8.00E-01
1 3 5 7 9 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

160 1E+01

140 ID=-5A 1E+00

120 1E-01 125°C

RDS(ON) (mΩ)

100 1E-02
-IS (A)

80 125°C 1E-03
25°C

60 1E-04

40 25°C 1E-05

20 1E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=-15V
ID=-5A 1000
8 Ciss

Capacitance (pF)
800
-VGS (Volts)

6
600
4
400
Coss
2
200
Crss
0 0
0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 TJ(Max)=150°C 40
TA=25°C TJ(Max)=150°C
10µs TA=25°C
RDS(ON) 30
10 100µs
limited
-ID (Amps)

Power (W)

1ms
20
0.1s 10ms
1
1s 10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance