0% found this document useful (0 votes)
46 views

Transistor Equivalent Circuits and Models

The document discusses transistor amplifiers and their equivalent circuits. It covers the dc and ac equivalent circuits for npn and pnp transistors in common base and common emitter configurations. The key parameters like alpha, beta, junction resistance and their representation in the equivalent circuits are explained.

Uploaded by

JANGA AUSTINE
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
46 views

Transistor Equivalent Circuits and Models

The document discusses transistor amplifiers and their equivalent circuits. It covers the dc and ac equivalent circuits for npn and pnp transistors in common base and common emitter configurations. The key parameters like alpha, beta, junction resistance and their representation in the equivalent circuits are explained.

Uploaded by

JANGA AUSTINE
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 53

DEPARTMENT OF

ELECTRICAL ENGINEERING

Transistor Amplifiers and their Equivalent


Circuits

January 28, 2024

© Theraja, B. L., & Theraja, A. K. (2005). A textbook of electrical


technology. Ram Nagar, New Delhi: S. Chand & Company Ltd.
© Malvino, A. P. (2015). Electronic Principles. New York, United States:
McGraw-Hill US Higher Ed USE Legacy.

Ony
angoS
.Obur
a 1/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Learning Outcomes

By the end of this class you should be able to:


1. Represent npn and pnp transistors using their dc equivalent
circuits,

2. Represent npn and pnp transistors using their ac equivalent


circuits,

3. Analyse CB amplifiers using their equivalent circuits,

4. Analyse CE amplifiers using their equivalent circuits,

5. Determine the effect of source resistance on the voltage


gain of an amplifier.

Ony
angoS
.Obur
a 2/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Introduction

In this topic, we consider ideal transistors, and only discuss the


small-signal equivalent circuits.

A small-signal operation is that in which the ac input signal


(voltages and currents) are approx. ±10 % of Q-point values.

There are two approaches regarding the equivalent circuit to


be substituted for the transistor.

Ony
angoS
.Obur
a 3/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

The two approaches make use of


1. The four h-parameters of the transistor and the values of
circuit components,

2. The beta (β) of the transistor and the values of the


circuit components.

The hybrid parameters produce more accurate results in the


analysis of amplifier circuits.

Ony
angoS
.Obur
a 4/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

However, the use of h-parameter equivalent circuit is


persistently trouble with the following difficulties:

1. The values of h-parameters are not so readily or easily


available.

2. Their values vary considerably with individual transistors


even of the same type number.

3. Their values are limited to a particular set of operating


conditions for reasonably accurate results.

Ony
angoS
.Obur
a 5/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Thus the second method which employs transistor β and


resistance values is lately gaining more popularity.

The second method has the following advantages:

1. The required values are easily available

2. The procedure followed is simple and easy to understand

3. The results obtained are quite accurate for the study of


amplifier circuit characteristics.

Ony
angoS
.Obur
a 6/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

DC equivalent circuit

(a). CB configuration circuit

An ideal transistor has α = 1 which means that IC = IE .

Regarding dc signals, we have seen that the emitter diode acts


like any forward-biased ideal diode...

...while the collector diode acts as a current source due to


transistor action.

Ony
angoS
.Obur
a 7/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

And so, we can view an ideal transistor as a rectifier diode in


emitter and a current source in collector

Figure 1: (a) A common base NPN transistor circuit, (b) the dc


equivalent of a common base NPN transistor circuit.

Ony
angoS
.Obur
a 8/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

In the dc equivalent circuit of Figure 1(b), current arrow points


in the direction of conventional current,...

...the emitter current flows from B to E and collector current


from C to B.

The dc equivalent circuit in Figure 2 for an PNP transistor is


exactly similar, but with opposite direction of current flow.

Ony
angoS
.Obur
a 9/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 2: (a) A common base PNP transistor circuit, (b) the dc


equivalent of a common base PNP transistor circuit.

Ony
angoS
.Obur
a 10/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

(b). CE configuration circuit

In the ideal CE configuration, we disregard leakage current


and take βac equal to βdc .

Figure 3: (a) A common emitter NPN transistor circuit, (b) the dc


equivalent of a common emitter NPN transistor circuit.

Ony
angoS
.Obur
a 11/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

AC equivalent circuit
(a). CB configuration circuit

In the case of small input ac signals, the emitter diode does


not rectify, instead it offers resistance called ac resistance...

...while as usual, collector diode acts as a current source.

Figure 4 shows the ac equivalent circuit of a transistor connected


in the CB-configuration

Ony
angoS
.Obur
a 12/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 4: The ac equivalent circuit of a transistor connected in the


CB configuration.

Ony
angoS
.Obur
a 13/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

This circuit is valid both for PNP as well as NPN transistors


∵ the difference in the direction of ac current does not matter.

The ac resistance offered by the emitter diode is

rac = rj + rB (1)

where
▶ rj is the junction resistance and

▶ rB is the bulk (base-spreading) resistance1 .

1
rE , the (emitter-spreading) resistance is considered zero because the emitter
is highly dopedOny angoS .Obura 14/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Assuming that rB is negligible

rac = rj + rB
25mV
= + negligible
IE
25mV
=
IE
where IE is dc emitter current in mA

It is written as re′ to signify junction resistance of the emitter,


that is, a.c resistance looking into the emitter.

Ony
angoS
.Obur
a 15/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Thus the junction resistance of the emitter is


25mV
re′ =
IE
The a.c collector current is α times the emitter current, ie . Thus,

ic = αie

As a result, the a.c equivalent circuit of a CB configuration is


shown in Figure 5.

Ony
angoS
.Obur
a 16/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 5: The simplified ac equivalent circuit of a transistor


connected in the CB configuration.

Ony
angoS
.Obur
a 17/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

(b). CE configuration circuit

Figure 6(a) shows the equivalent circuit when an NPN transistor


has been connected in the CE-configuration.

Figure 6: The simplified ac equivalent circuit of a transistor


connected in the CB configuration.

Ony
angoS
.Obur
a 18/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

The a.c resistance looking into the base is


25mV
rac = − Here the d.c current is IB not IE
IB

25mV 25mV 25mV


= =β· ≈β· since IC ≈ IE
IC /β IC IE

≈ βre′

The a.c collector current is β times the base current. Thus,

ic = βib

Ony
angoS
.Obur
a 19/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Equivalent circuit of a CB amplifier

Figures 7 and 8 shows the circuit and the equivalent circuit


respectively of a CB amplifier

Clearly, emitter is forward-biased by −VEE and collector is


reverse-biased by +VCC .

Ony
angoS
.Obur
a 20/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 7: The circuit of a CB amplifier.

Ony
angoS
.Obur
a 21/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

The a.c signal source voltage vs drives the emitter, and...

...produces small voltage and current fluctuations in the


output circuit.

We will see that ac output voltage is amplified because it is


more than vs .

Ony
angoS
.Obur
a 22/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

(a). DC equivalent circuit

To draw the dc equivalent circuit, the following procedure may


be adopted:
1. Short all ac sources to ground i.e. reduce them to zero,

2. Open all capacitors because they block dc.

Ony
angoS
.Obur
a 23/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 8: The dc equivalent circuit of a CB amplifier.

Ony
angoS
.Obur
a 24/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Doing this, we see from Figure 7, that neither emitter current


can pass thro’ C1 nor collector current can pass thro’ C2

These currents are confined to their respective resistances RE


and RC (earlier we had been designating it as resistance RL ). Here,

IC = αIE ≈ IE

VCB = VCC − IC RL

Hence, the dc equivalent circuit becomes as shown in Figure 8.

Ony
angoS
.Obur
a 25/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

(b). AC equivalent circuit

To draw the ac equivalent circuit, we adopt the following


procedure:
1. All dc sources are shorted i.e. they are treated as ac ground,

2. All coupling capacitors like C1 and C2 in Figure 7 are


shorted and

3. Emitter diode is replaced by its a.c resistance rac = re′

25mV
re′ =
IE
where IE is dc emitter current in mA.

Ony
angoS
.Obur
a 26/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Ony
angoS
.Obur
a 27/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

As it sees, the input a.c signal, vs has to feed RE and re′ in


parallel. See Figure 9(a).

Figure 9: The ac equivalent circuit of a CB amplifier.

Ony
angoS
.Obur
a 28/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Here, the collector has to feed RC and RL which are connected


in parallel across it

The ac signal in collector sees an output load resistance of

rL = RC ||RL

In Figure 9(b), the collector diode is shown as a current source.

Ony
angoS
.Obur
a 29/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

(c). Principal operating characteristics

1. Input resistance

▶ As seen from Figure 9(a), the input resistance of the circuit


(or stage) is given by

re′ RE
rin = rin(stage) = RE ||re′ =
RE + re′

In practice, RE is always much greater than re′ so that parallel


combination RE ||re′ ≈ re′

Thus, rin ≈ re′ is the input resistance of the emitter diode

Ony
angoS
.Obur
a 30/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

2. AC load resistance

▶ The collector load as seen by output ac signal, designated


as rL , consists of a parallel combination of RL and RC .

rL = RL ||RC

Note that this is the output resistance as seen by


collector.

Also note that in case RL is not connected, then rL = RC

Ony
angoS
.Obur
a 31/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 10: The ac equivalent circuit of a CB amplifier.

Ony
angoS
.Obur
a 32/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

3. Current gain

▶ It is given by the ratio

ic
Ai = =α
ie
4. Voltage gain

▶ It is given by the ratio


vout
Av =
vin
But,

vout = ic rL = βib rL
vin = ie rin = (1 + β)ib · rin

Ony
angoS
.Obur
a 33/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Note here, that vin equals vs ∵ there is no internal


resistance of the source. With RS , the two wont be equal.

Thus voltage gain is given by the ratio


ic rL βib rL αrL
Av = = =
ie rin (1 + β)ib rin rin
∼ rL β
= Assuming that =α=1
rin 1+β
β rL rL
Taking the ratio = α as unity, Av = = ′
1+β rin re

Ony
angoS
.Obur
a 34/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

5. Power gain

▶ It is given by the ratio

Ap = Av · Ai

When expressed in decibels, it is written as

Gp = 10 log10 Ap dB

When expressed in terms of rin and rL , the a.c equivalent


circuit becomes as shown in Figure 10

Ony
angoS
.Obur
a 35/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Ony
angoS
.Obur
a 36/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Example 1

For the single-stage CB amplifier shown in Figure 11;


a). Find
i). rin ,
ii). rL ,
iii). Ai ,
iv). Av and
v). Ap .
b). What would be the rms value of the signal voltage across the
load if vs has an rms value of 1.5mV ?
Assume silicon material and transistor α = 0.98.

Ony
angoS
.Obur
a 37/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 11: A single-stage CB amplifier.

Ony
angoS
.Obur
a 38/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Example 2

For the CB amplifier circuit shown in Figure 12, find


i). stage rin
ii). rL
iii). a.c output voltage vout
iv). voltage gain Av .
Take VBE = 0.7V .

Ony
angoS
.Obur
a 39/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 12: The amplifier circuit.

Ony
angoS
.Obur
a 40/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Equivalent circuit of a CE amplifier

Consider the base bias CE amplifier circuit of Figure 13(a).

Figure 13: The amplifier circuit along with its dc equivalent circuit.

Ony
angoS
.Obur
a 41/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

(a). DC equivalent circuit

To draw the dc equivalent circuit, the same procedure, as


presented above, is adopted. See Figure 13(b). Clearly,

VCC − VBE
IB =
RB

IC = β IB

IE ≈ IC = βIB

Ony
angoS
.Obur
a 42/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

(b). AC equivalent circuit

Let us now analyse the ac equivalent circuit given in Figure 14.

Figure 14: AC equivalent circuit.

Ony
angoS
.Obur
a 43/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

As shown previously, the ac resistance rac as seen by the input


signal when looking into the base is = βre′ .

It may be called rin(base) to distinguish it from rin which is


resistance of the CE stage as shown in Figure 14(a).

Note that in the absence of ac voltage source resistance RS ,...

...the whole of vs acts across RB as well as βre′ because the two


are connected in parallel across it.

Ony
angoS
.Obur
a 44/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Also note that major part of source current passes through βre′ and
an extremely small part (= vs /RB ) passes through RB .

Since RB is usually very large, current passing thro’ it can be easily


neglected.

Hence, as shown in Figure 14(b), ib = is .

Ony
angoS
.Obur
a 45/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

(c). Principal operating characteristics

1. Input resistance
As seen from Figure 14, input resistance of the stage is

rin = RB ||βre′ ≈ βre′ RB ≫ βre′


≈ input resistance of the base
rin(stage) ≈ rin(base)

2. AC load resistance

rL = RC ||RL

3. Current gain
ic
Ai = =β
ib
Ony
angoS
.Obur
a 46/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Ony
angoS
.Obur
a 47/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

4. Voltage gain The voltage gain of the stage or circuit is


vout
Av =
vin

But vin = ib · βre′ and


vout = ic · rL = βib · rL

βib · rL rL
∴ Av = ′
= ′ if RB ≫ βre′
ib · βre re

5. Power gain

Ap = Ai · Av

Gp = 10 log10 Av dB

Ony
angoS
.Obur
a 48/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Example 3

If in the CE circuit of Figure 13(a), VCC = 20V , RC = 10K ,


RB = 1M, RL = 1M, vs = 2mV and β = 50, find
i). ib and ic
ii). rin
iii). rL
iv). An
v). Ap and Gp .

Ony
angoS
.Obur
a 49/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Ony
angoS
.Obur
a 50/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Example 4

The CE amplifier circuit of Figure 15 is employing emitter


feedback. Taking transistor β = 100,
a). find;
i). rin
ii). rL
iii). Av
iv). Ap and
v). Gp .
b). How will these values change if emitter bypass capacitor is
removed?

Ony
angoS
.Obur
a 51/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 15: CE amplifier circuit.

Ony
angoS
.Obur
a 52/53
DEPARTMENT OF
ELECTRICAL ENGINEERING

53/53

You might also like