BIPOL AR

JUNCTION
TRANSISTOR
HISTORICAL BACKGROUND: VACUUM
TUBE
• used in radios, televisions, radar
equipment, and telephone systems during
the first half of the 1900s
• a glass tube that has its gas removed,
creating a vacuum
• Contain electrodes for controlling electron
flow and were used in early computers as a
switch or an amplifier
HISTORICAL BACKGROUND: TRIODE,
THE FIRST AMPLIFIER
• an electronic amplifying vacuum
tube(or valve in British English)
consisting of three electrodes inside an
evacuated glass envelope: a
heated filament or cathode, a grid, and
a plate(anode).
• Developed from Lee De Forest's
1906 Audion, a partial vacuum tube that
added a grid electrode to
the thermionic diode(Fleming valve),
HISTORICAL BACKGROUND: TETRODE
AND PENTODE
HISTORICAL BACKGROUND: TETRODE
AND PENTODE
• a vacuum tube having four
active electrodes. The four electrodes
in order from the centre are:
a thermionic cathode, first and
second grids and
a plate (called anode in British
English).
HISTORICAL BACKGROUND: TETRODE
AND PENTODE
• an electronic device having five active electrodes.
• a three-grid amplifying vacuum tube (thermionic
valve), which was invented by Gilles
Holst and Bernhard D.H. Tellegen in 1926.
• consists of an evacuated glass envelope containing
five electrodes in this order: a cathode heated by
a filament, a control grid, a screen grid, a suppressor
grid, and a plate(anode).
HISTORICAL BACKGROUND: POINT –
CONTACT TRANSISTOR
HISTORICAL BACKGROUND: POINT –
CONTACT TRANSISTOR
HISTORICAL BACKGROUND: POINT –
CONTACT TRANSISTOR
• smaller and lightweight;
• no heater requirement or heater loss;
• had a rugged construction;
• more efficient since less power was
absorbed by the device itself;
• instantly available for use, requiring no
warm-up period;
• Lower operating voltages were possible.
HISTORICAL BACKGROUND:
TRANSISTOR
BJT’S – PRACTICAL ASPECTS

Heat sink
BIPOLAR JUNCTION TRANSISTOR (BJT)
❖a three-layer active device that consists of two p–
n junctions connected back-to-back.
❖A BJT is actually a current-amplifying device. In a
BJT, the operation depends on the active
participation of both the majority carrier, and the
minority carrier; hence, the name “bipolar” is
rightly justified.
❖control in a bipolar transistor is generally considered
to be due to an electric current
❖contraction of “transfer” and “resistor”
TRANSISTOR CONSTRUCTION
➢Bipolar transistor is a 3-terminal device.
➢Emitter (E)
C
➢Base (B)
➢Collector (C)

E
 LAYER DOPING
EMITTER
• heavily doped
• its job is to emit or inject current carriers into the base region
BASE
• very thin and lightly doped
• most of the current carriers injected into the base region cross over into the
collector side and do not flow out the base lead
COLLECTOR
• moderately doped
• the largest region within the transistor
• Its function is to collect or attract current carriers injected into the base region
 npn transistor

pnp transistor
BIPOLAR JUNCTION TRANSISTOR
Collector Collector
N P
P Base N Base
N P

Emitter Emitter

C
BE
BJT CROSS – SECTIONS
TRANSISTOR
OPERATION
BIPOLAR JUNCTION TRANSISTOR:
BIASING
BIPOLAR JUNCTION TRANSISTOR:
BIASING
• the ratio of the total width to that of the center layer is 0.150 /
0.001 = 150:1.

150:1
• The doping of the sandwiched layer is also considerably less than
that of the outer layers (typically, 1:10 or less).

1:10
FORWARD – REVERSE BIAS
DEPLETION LAYERS
 TRANSISTOR OPERATION

Forward-biased junction Reverse-biased junction

of a pnp transistor of a pnp transistor

One p–n junction of a transistor is reverse-biased, whereas the other is

forward-biased.
 TRANSISTOR MECHANISM
❖The p–n junction of the transistor is forward-biased whereas the base-to-collector is without
a bias.
❖ The depletion region gets reduced in width due to the applied bias, resulting in a heavy
flow of majority carriers from the p-type to the n-type material gushing down the depletion
region and reaching the base.
❖ The forward-bias on the emitter–base junction will cause current to flow.

Forward-biased junction of a p–n–p transistor

 TRANSISTOR MECHANISM
❖The flow of majority carriers is zero, resulting in a minority-carrier flow. Thus, one p–n
junction of a transistor is reverse-biased, while the other is kept open.

Reverse-biased junction of a p–n–p transistor

TRANSISTOR CURRENTS
Emitter current is the sum of the collector and base currents:

I =I +I
E C B

The collector current is comprised of two currents:

I =I +I
C C (majority) CO (minority)
TRANSISTOR OPERATION

force – voltage/current
water flow – current
- amplification
TRANSISTOR BIASING

• 3 Transistor Currents:
1. Base Current (IB)
2. Collector Current (IC)
3. Emitter Current (IE)
PNP TRANSISTOR
NPN TRANSISTOR
BJT APPLICATIONS

➢ Transistors as an Amplifier for the base current, since small changes in the
base current cause big changes in the collector current.

➢Transistors as a Switch: if voltage applied to the base is such that emitter-

base junction is reverse-biased, no current flows through the transistor --
transistor is “off”.

➢Transistor can be used as a Voltage-Controlled Switch; computers use

transistors in this way.
TRANSISTOR
C O N F I G U R AT I O N S
1 . C O M M O N – B A S E C O N F I G U R AT I O N
2. COMMON – EMITTER
C O N F I G U R AT I O N
3 . C O M M O N – C O L L E C TO R
C O N F I G U R AT I O N
COMMON BASE CONFIGURATION
• the base is common to both the input and output sides of
the configuration
• The base is usually the terminal closest to, or at, ground
potential
The arrow
in the
graphic
symbol
defines
the
direction
of emitter
current
(conventi
onal flow)
through
the
device.
T R A N S I S TO R
C H A R AC T E R I S T I C S
The input set for the
common-base amplifier
relates an input current ( IE )
to an input voltage ( VBE ) for
various levels of output
voltage ( VCB ).
T R A N S I S TO R
C H A R AC T E R I S T I C S
The input characteristics reveal
that for fixed values of collector
voltage ( V CB ), as the base-to-
emitter voltage increases, the
emitter current increases in a
manner that closely resembles
the diode characteristics..
Once a transistor is
in the “on” state,
the base-to-emitter
voltage will be
assumed to be the
following:
T R A N S I S TO R
C H A R AC T E R I S T I C S
The output set relates an output
current ( I C ) to an output
voltage ( V CB ) for various levels
of input current ( I E ). The output
or collector set of characteristics
has three basic regions of
interest: the active , cutoff , and
saturation regions.
ACTIVE REGION C

IB
IC
B
-
VEB IE
• the region normally employed
+
for linear (undistorted)
E
amplifiers.
• In the active region the base–
emitter junction is forward-biased,
whereas the collector– base
junction is reverse-biased.
ACTIVE REGION

• At the lower end of

• the active region the emitter current ( I E
) is zero, and the collector current is
simply that due to
• the reverse saturation current I CO
T R A N S I S TO R
C H A R AC T E R I S T I C S
As the emitter current increases
above zero, the collector current
increases to a magnitude essentially
equal to that of the emitter current as
determined by the basic transistor-
current relations.
A first approximation to the relationship
between IE and IC in the active region is
given by
CUT – OFF REGION

• that region where the collector current

is 0 A
• In the cutoff region the base–emitter and
collector–base junctions of a transistor are
both reverse-biased.
SATURATION REGION

• that region of the characteristics to the

left of V CB = 0 V.
• In the saturation region the base–
emitter and collector–base junctions
are forward-biased.
T R A N S I S TO R
C H A R AC T E R I S T I C S
The horizontal scale in this
region was expanded to
clearly show the dramatic
change in characteristics in
this region. Note the
exponential increase in
collector current as the
voltage V CB increases toward
0V
ALPHA (α) : DC MODE

Ideally  = 1, but in reality it is between 0.9

and 0.998.
ALPHA (α) : AC MODE

• common-base , short-circuit , amplification factor

BIASING
COMMON – EMITTER CONFIGURATION

• the emitter is common to both the input and output terminals (in
this case common to both the base and collector terminals)
In the active region of a common-emitter amplifier, the base–emitter junction is
forward-biased, whereas the collector–base junction is reverse-biased.
THE COLLECTOR CURRENT DEFINED
BY THE CONDITION I B = 0 mA
BETA ( β ): DC MODE

• For practical devices the level of beta typically ranges from about 50 to over
400, with most in the midrange.
BETA ( β ): AC MODE

• common-emitter , forward-current , amplification factor

BIASING
COMMON – COLLECTOR
CONFIGURATION
• used primarily for impedance-matching purposes since it has a high
input impedance and low output impedance, opposite to that of the
common-base and common emitter configurations.
EXAMPLES
• EXAMPLE 1
• Given IB = 6.0A and
IC=510 A
• EXAMPLE 2
Determine ,  and IE
• NPN Transistor
⚫ EXAMPLE 3 • Reverse saturation current
⚫ PNP Transistor Is = 10-13A with current
⚫  = 60, IC= 0.85mA gain,  = 90. Based on VBE
= 0.685V, determine IC , IB
⚫ Determine , IE and IB
and IE