Freescale Semiconductor Document Number: MC9S08SC4

Data Sheet: Technical Data Rev. 4, 6/2010

MC9S08SC4 8-Bit
Microcontroller Data Sheet
MC9S08SC4

948F-01

8-Bit HCS08 Central Processor Unit (CPU) • Breakpoint capability to allow single breakpoint setting
• Up to 40 MHz HCS08 CPU (central processor unit); up during in-circuit debugging
to 20 MHz bus frequency Peripherals
• HC08 instruction set with added BGND instruction • SCI — Serial Communication Interface
On-Chip Memory — Full-duplex non-return to zero (NRZ)
• 4 KB of FLASH with read/program/erase over full — LIN master extended break generation
operating voltage and temperature — LIN slave extended break detection
• 256 bytes of Random-access memory (RAM) — Wake-up on active edge
Power-Saving Modes • TPMx — Two 2-channel Timer/PWM modules (TPM1
• Two very low power stop modes and TPM2)
• Reduced power wait mode — 16-bit modulus or up/down counters
— Input capture, output compare, buffered
Clock Source Options edge-aligned or center-aligned PWM
• Oscillator (XOSC) — Loop-control Pierce oscillator;
• ADC — Analog to Digital Converter
Crystal or ceramic resonator range of 32 kHz to 38.4 kHz
or 1 MHz to 16 MHz — 8-channel, 10-bit resolution
• Internal Clock Source (ICS) — Internal clock source — 2.5 μs conversion time
module containing a frequency-locked loop (FLL) — Automatic compare function
controlled by internal or external reference; precision — Temperature sensor
trimming of internal reference allows 0.2 % resolution — Internal bandgap reference channel
and 2.0 % deviation over temperature and voltage;
supports bus frequencies from 2 MHz to 20 MHz. Input/Output
• 12 general purpose I/O pins (GPIOs)
System Protection • 8 interrupt pins with selectable polarity
• Watchdog computer operating properly (COP) reset with
• Hysteresis and configurable pull-up device on all input
option to run from dedicated 1 kHz internal clock source
pins; Configurable slew rate and drive strength on all
or bus clock
output pins.
• Low-voltage detection with reset or interrupt; selectable
trip points Package Options
• Illegal opcode detection with reset • 16-TSSOP
• Illegal address detection with reset Operating Parameters
• FLASH block protect • 4.5-5.5 V operation
• Reset on loss of clock • C,V, M temperature ranges available, covering -40 -
125 °C operation
Development Support
• Single-wire background debug interface

Freescale reserves the right to change the detail specifications as may be required to permit
improvements in the design of its products.
© Freescale Semiconductor, Inc., 2009-2010. All rights reserved.
 Table of Contents
Chapter 1 3.9 Internal Clock Source (ICS) Characteristics . . . . . . . . 18
Device Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3.10 ADC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 19
1.1 MCU Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3.11 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Chapter 2 3.11.1 Control Timing . . . . . . . . . . . . . . . . . . . . . . . . . 21
Pins and Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 3.11.2 TPM Module Timing . . . . . . . . . . . . . . . . . . . . . 22
2.1 Device Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . .5 3.12 Flash Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Chapter 3 3.13 EMC Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 3.13.1 Radiated Emissions . . . . . . . . . . . . . . . . . . . . . 24
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Chapter 4
3.2 Parameter Classification . . . . . . . . . . . . . . . . . . . . . . . . .7 Ordering Information and Mechanical Drawings . . . . . . . . . . 25
3.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . .7 4.1 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1.1 Device Numbering Scheme . . . . . . . . . . . . . . . 25
3.5 ESD Protection and Latch-Up Immunity . . . . . . . . . . . . .9 4.2 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.3 Mechanical Drawings. . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.7 Supply Current Characteristics . . . . . . . . . . . . . . . . . . .13 Chapter 5
3.8 External Oscillator (XOSC) Characteristics . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

MC9S08SC4 MCU Series Data Sheet, Rev. 4

2 Freescale Semiconductor
Chapter 1
Device Overview
The MC9S08SC4 is a member of the low-cost, high-performance HCS08 Family of 8-bit microcontroller units (MCUs). The
MC9S08SC4 uses the enhanced HCS08 core.

1.1 MCU Block Diagram

The block diagram in Figure 1-1 shows the structure of the MC9S08SC4 MCU.

PTA3/PIA3/ADP3
HCS08 CORE

PORT A
PTA2/PIA2/ADP2
BKGD/MS
PTA1/PIA1/TPM2CH0/ADP1
CPU BDC
RESET PTA0/PIA0/TPM1CH0/TCLK/ADP0
TCLK
HCS08 SYSTEM CONTROL 16-BIT TIMER/PWM TPM1CH0
MODULE (TPM1) TPM1CH1
RESETS AND INTERRUPTS PTB7/EXTAL
MODES OF OPERATION PTB6/XTAL
POWER MANAGEMENT TCLK
16-BIT TIMER/PWM TPM2CH0 PTB5/TPM1CH1
COP LVD MODULE (TPM2) PORT B
TPM2CH1 PTB4/TPM2CH1
PTB3/PIB3/ADP7
RxD
SERIAL COMMUNICATIONS PTB2/PIB2/ADP6
USER FLASH TxD
INTERFACE MODULE (SCI) PTB1/PIB1/TxD/ADP5
(MC9S08SC4 = 4096 BYTES)
PTB0/PIB0/RxD/ADP4

USER RAM

(MC9S08SC4 = 256 BYTES)

SEE NOTE 1
VDD
40-MHz INTERNAL CLOCK VOLTAGE
SOURCE (ICS) VSS REGULATOR 10-BIT ADP7-ADP0
ANALOG-TO-DIGITAL
LOW-POWER OSCILLATOR EXTAL VDDA CONVERTER (ADC)
32 kHz to 38.4 kHz VSSA
XTAL
1 MHz to 16 MHz VREFH
VREFL

NOTES

1: VDDA/VREFH and VSSA/VREFL, are derived from VDD and VSS respectively.

Figure 1-1. MC9S08SC4 Block Diagram

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 3
Chapter 1 Device Overview

MC9S08SC4 MCU Series Data Sheet, Rev. 4

4 Freescale Semiconductor
Chapter 2
Pins and Connections
This section describes signals that connect to package pins. It includes pinout diagrams, recommended system connections, and
detailed discussions of signals.

2.1 Device Pin Assignment

The following figure shows the pin assignments for the MC9S08SC4 device.

RESET 1 16 PTA0/PIA0/TPM1CH0/TCLK/ADP0
BKGD/MS 2 15 PTA1/PIA1/TPM2CH0/ADP1
VDD 3 14 PTA2/PIA2/ADP2
VSS 4 13 PTA3/PIA3/ADP3
PTB7/EXTAL 5 12 PTB0/PIB0/RxD/ADP4
PTB6/XTAL 6 11 PTB1/PIB1/TxD/ADP5
PTB5/TPM1CH1 7 10 PTB2/PIB2/ADP6
PTB4/TPM2CH1 8 9 PTB3/PIB3/ADP7

Table 2-1. Pin Function Priority

Pin Priority
Number Lowest Highest

16-pin Port Pin Alt 1 Alt 2 Alt 3 Alt 4

1 RESET
2 BKGD MS
3 VDD
4 VSS
5 PTB7 EXTAL
6 PTB6 XTAL
7 PTB5 TPM1CH1
8 PTB4 TPM2CH1
9 PTB3 PIB3 ADP7
10 PTB2 PIB2 ADP6
11 PTB1 PIB1 TxD ADP5

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 5
Chapter 2 Pins and Connections

Table 2-1. Pin Function Priority (continued)

Pin Priority
Number Lowest Highest

16-pin Port Pin Alt 1 Alt 2 Alt 3 Alt 4

12 PTB0 PIB0 RxD ADP4
13 PTA3 PIA3 ADP3
14 PTA2 PIA2 ADP2
15 PTA1 PIA1 TPM2CH0 ADP1
16 PTA0 PIA0 TPM1CH0 TCLK ADP0

MC9S08SC4 MCU Series Data Sheet, Rev. 4

6 Freescale Semiconductor
Chapter 3
Electrical Characteristics
3.1 Introduction
This section contains electrical and timing specifications for the MC9S08SC4 Series of microcontrollers available at the time
of publication.

3.2 Parameter Classification

The electrical parameters shown in this supplement are guaranteed by various methods. To give the customer a better
understanding the following classification is used and the parameters are tagged accordingly in the tables where appropriate:

Table 3-1. Parameter Classifications

P Those parameters are guaranteed during production testing on each individual device.

Those parameters are achieved by the design characterization by measuring a statistically relevant
C
sample size across process variations.

Those parameters are achieved by design characterization on a small sample size from typical devices
T under typical conditions unless otherwise noted. All values shown in the typical column are within this
category.

D Those parameters are derived mainly from simulations.

NOTE
The classification is shown in the column labeled “C” in the parameter tables where
appropriate.

3.3 Absolute Maximum Ratings

Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the
limits specified in Table 3-2 may affect device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this section.
This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised
that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this
high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (for
instance, either VSS or VDD) or the programmable pull-up resistor associated with the pin is enabled.

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 7
Chapter 3 Electrical Characteristics

Table 3-2. Absolute Maximum Ratings

Rating Symbol Value Unit

Supply voltage VDD –0.3 to +5.8 V

Maximum current into VDD IDD 120 mA
Digital input voltage VIn –0.3 to VDD + 0.3 V
Instantaneous maximum current ID ± 25 mA
Single pin limit (applies to all port pins)1, 2, 3
Storage temperature range Tstg –55 to 150 °C
1
Input must be current limited to the value specified. To determine the value of the required
current-limiting resistor, calculate resistance values for positive (VDD) and negative (VSS) clamp
voltages, then use the larger of the two resistance values.
2
All functional non-supply pins are internally clamped to VSS and VDD.
3
Power supply must maintain regulation within operating VDD range during instantaneous and
operating maximum current conditions. If positive injection current (VIn > VDD) is greater than
IDD, the injection current may flow out of VDD and could result in external power supply going
out of regulation. Ensure external VDD load will shunt current greater than maximum injection
current. This will be the greatest risk when the MCU is not consuming power. Examples are: if
no system clock is present, or if the clock rate is very low (which would reduce overall power
consumption).

3.4 Thermal Characteristics

This section provides information about operating temperature range, power dissipation, and package thermal resistance. Power
dissipation on I/O pins is usually small compared to the power dissipation in on-chip logic and voltage regulator circuits, and
it is user-determined rather than being controlled by the MCU design. To take PI/O into account in power calculations, determine
the difference between actual pin voltage and VSS or VDD and multiply by the pin current for each I/O pin. Except in cases of
unusually high pin current (heavy loads), the difference between pin voltage and VSS or VDD will be very small.
Table 3-3. Thermal Characteristics

Num C Rating Symbol Value Unit

1 — Operating temperature range (packaged) TL to TH

C TA –40 to 85
°C
V –40 to 105
M –40 to 125
Maximum junction temperature —
2 D C TJM 95
°C
V 115
M 135
Thermal resistance 1,2

Single-layer board
3 D 16-pin TSSOP θJA 130 °C/W
Thermal resistance1,2
Four-layer board
4 D 16-pin TSSOP θJA 87 °C/W

MC9S08SC4 MCU Series Data Sheet, Rev. 4

8 Freescale Semiconductor
 Chapter 3 Electrical Characteristics

1
Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting
site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board,
and board thermal resistance.
2
Junction to Ambient Natural Convection

The average chip-junction temperature (TJ) in °C can be obtained from:

TJ = TA + (PD × θJA) Eqn. 3-1

where:

TA = Ambient temperature, °C
θJA = Package thermal resistance, junction-to-ambient, °C/W
PD = Pint + PI/O
Pint = IDD × VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected)
is:

PD = K ÷ (TJ + 273°C) Eqn. 3-2

Solving Equation 3-1 and Equation 3-2 for K gives:

K = PD × (TA + 273°C) + θJA × (PD)2 Eqn. 3-3

where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 3-1 and Equation 3-2
iteratively for any value of TA

3.5 ESD Protection and Latch-Up Immunity

Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification ESD stresses were performed for the human body model (HBM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 3-4. ESD and Latch-up Test Conditions

Model Description Symbol Value Unit

Human Series resistance R1 1500 Ω
Body
Storage capacitance C 100 pF
Number of pulses per pin — 3 —
Latch-up Minimum input voltage limit — –2.5 V
Maximum input voltage limit — 7.5 V

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 9
Chapter 3 Electrical Characteristics

Table 3-5. ESD and Latch-Up Protection Characteristics

No. Rating1 Symbol Min Max Unit

1 Human body model (HBM) VHBM ± 2000 — V

2 Charge device model (CDM) VCDM ± 500 — V

3 Latch-up current at TA = 125°C ILAT ± 100 — mA

1
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.

3.6 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 3-6. DC Characteristics

Num C Characteristic Symbol Condition Min Typ1 Max Unit

4 — Operating voltage VDD — 4.5 — 5.5 V
C All I/O pins, 5 V, ILoad = –4 mA VDD – 1.5 — —
P Output high low-drive strength VOH 5 V, ILoad = –2 mA VDD – 0.8 — — V
5
C voltage All I/O pins, 5 V, ILoad = –20 mA VDD – 1.5 — —
P high-drive strength 5 V, ILoad = –10 mA VDD – 0.8 — —
Output high Max total IOH for VOUT < VDD
6 C IOHT 0 — –100 mA
current all ports
C All I/O pins 5 V, ILoad = 4 mA — — 1.5
P Output low low-drive strength VOL 5 V, ILoad = 2 mA — — 0.8
7
C voltage All I/O pins 5 V, ILoad = 20 mA — — 1.5 V
P high-drive strength 5 V, ILoad = 10 mA — — 0.8
Output low Max total IOL for all ports VOUT > VSS
8 C IOLT 0 — 100 mA
current
9 P Input high voltage; all digital inputs VIH 5V 0.65 x VDD — — V
10 P Input low voltage; all digital inputs VIL 5V — — 0.35 x VDD V
11 C Input hysteresis Vhys — 0.06 x VDD — — V
12 P Input leakage current (per pin) |IIn| VIn = VDD or VSS — 0.1 1 μA
P Hi-Z (off-state) leakage current (per pin)
13 input/output port pins |IOZ| VIn = VDD or VSS, — 0.1 1 μA
PTB6/XTAL,RESET VIn = VDD or VSS — 0.2 2 μA
2
Pull-up or Pull-down resistors; when
enabled
14
P I/O pins RPU,RPD — 17 37 52 kΩ
3
C RESET RPU 17 37 52 kΩ

MC9S08SC4 MCU Series Data Sheet, Rev. 4

10 Freescale Semiconductor
 Chapter 3 Electrical Characteristics

Table 3-6. DC Characteristics (continued)

Num C Characteristic Symbol Condition Min Typ1 Max Unit

4, 5, 6, 7
D DC injection current
Single pin limit VIN > VDD 0 — 2 mA
15 IIC VIN < VSS, 0 — –0.2 mA
Total MCU limit, includes VIN > VDD 0 — 25 mA
sum of all stressed pins VIN < VSS, 0 — –5 mA
16 D Input Capacitance, all pins CIn — — — 8 pF
17 D RAM retention voltage VRAM — — 0.6 1.0 V
18 D POR re-arm voltage8 VPOR — 0.9 1.4 2.0 V
19 D POR re-arm time 9
tPOR — 10 — — μs
P Low-voltage detection threshold — —
high range VLVD1
20
VDD falling 3.85 4.0 4.15 V
VDD rising 3.95 4.1 4.25
Low-voltage warning threshold — —
P high range 1 VLVW3
21
VDD falling 4.45 4.6 4.75 V
VDD rising 4.55 4.7 4.85
Low-voltage warning threshold — —
P high range 0 VLVW2
22
VDD falling 4.15 4.3 4.45 V
VDD rising 4.25 4.4 4.55
T Low-voltage inhibit reset/recover Vhys
23
hysteresis — — 100 — mV
10
24 P Bandgap Voltage Reference VBG — 1.17 1.20 1.22 V
1
Typical values are measured at 25°C. Characterized, not tested.
2
When a pin interrupt is configured to detect rising edges, pull-down resistors are used in place of pull-up resistors.
3 The specified resistor value is the actual value internal to the device. The pull-up value may measure higher when measured

externally on the pin.

4 Power supply must maintain regulation within operating V
DD range during instantaneous and operating maximum current
conditions. If positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could result
in external power supply going out of regulation. Ensure external VDD load will shunt current greater than maximum injection
current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is present, or if
clock rate is very low (which would reduce overall power consumption).
5 All functional non-supply pins are internally clamped to V
SS and VDD.
6 Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate

resistance values for positive and negative clamp voltages, then use the larger of the two values.
7 The RESET pin does not have a clamp diode to V . Do not drive this pin above V .
DD DD
8
Maximum is highest voltage that POR will occur.
9 Simulated, not tested
10 Factory trimmed at V
DD = 5.0 V, Temp = 25°C

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 11
Chapter 3 Electrical Characteristics

2
125°C
25°C Max 1.5V@20mA
–40°C
1.5

VOL (V)
1

0.5

0
0 5 10 15 20 25
IOL (mA)
a) VDD = 5V, High Drive

Figure 3-1. Typical VOL vs IOL, High Drive Strength

2
125°C
25°C Max 1.5V@4mA
–40°C
1.5
VOL (V)

0.5

0
0 1 2 3 4 5
IOL (mA)
a) VDD = 5V, Low Drive

Figure 3-2. Typical VOL vs IOL, Low Drive Strength

MC9S08SC4 MCU Series Data Sheet, Rev. 4

12 Freescale Semiconductor
 Chapter 3 Electrical Characteristics

2
125°C
25°C Max 1.5V@ –20mA
–40°C
1.5

VDD – VOH (V)

1

0.5

0
0 –5 –10 –15 –20 –25
IOH (mA)
a) VDD = 5V, High Drive

Figure 3-3. Typical VDD – VOH vs IOH, High Drive Strength

2
125°C
25°C Max 1.5V@ –4mA
–40°C
1.5
VDD – VOH (V)

0.5

0
0 –1 –2 –3 –4 –5
IOH (mA)
a) VDD = 5V, Low Drive

Figure 3-4. Typical VDD – VOH vs IOH, Low Drive Strength

3.7 Supply Current Characteristics

This section includes information about power supply current in various operating modes.

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 13
Chapter 3 Electrical Characteristics

Table 3-7. Supply Current Characteristics

VDD
Num C Parameter Symbol Typ1 Max2 Unit
(V)

1 C Run supply current3 measured at RIDD 5 1.9 2.4

mA
(CPU clock = 4 MHz, fBus = 2 MHz)
2 P Run supply current3 measured at RIDD 5 4.6 5.6
mA
(CPU clock = 16 MHz, fBus = 8 MHz)
3 C Run supply current4 measured at RIDD 5 7.8 8.9
mA
(CPU clock = 32 MHz, fBus = 16 MHz)
C –40 °C (C & M suffix) 0.71 —
P Stop3 mode 25 °C (All parts) 0.93 —
4 C5 supply current 85 °C (C suffix only) S3IDD 5 4 11 μA
C5 105 °C (V suffix only) 9 30
P5 125 °C (M suffix only) 28 60
5 C –40 °C (C & M suffix) 0.70 —
P Stop2 mode 25 °C (All parts) 0.89 —
C5 supply current 85 °C (C suffix only) S2IDD 5 3 8 μA
C5 105 °C (V suffix only) 6 22
P5 125 °C (M suffix only) 17 41
6 C LVD adder to stop3 (LVDE = LVDSE = 1) S3IDDLVD 5 110 165 μA
7 C Adder to stop3 for oscillator enabled6 S3IDDOSC 5 5 8
μA
(EREFSTEN =1)
1
Typical values are based on characterization data at 25 °C. See Figure 3-5 through Figure 3-7 for typical curves
across voltage/temperature.
2
Max values in this column apply for the full operating temperature range of the device unless otherwise noted.
3
All modules except ADC active, ICS configured for FBE, and does not include any dc loads on port pins.
4
All modules except ADC active, ICS configured for FEI, and does not include any dc loads on port pins.
5 Stop currents are tested in production for 25 °C on all parts. Tests at other temperatures depend upon the part
number suffix and maturity of the product. Freescale may eliminate a test insertion at a particular temperature
from the production test flow once sufficient data has been collected and is approved.
6 Values given under the following conditions: low range operation (RANGE = 0) with a 32.768 kHz crystal and low
power mode (HGO = 0).

MC9S08SC4 MCU Series Data Sheet, Rev. 4

14 Freescale Semiconductor
 Chapter 3 Electrical Characteristics

10
FEI
FBELP
8

Run IDD (mA)

6

0
0 1 2 4 8 16 20
fbus (MHz)

Figure 3-5. Typical Run IDD vs. Bus Frequency (VDD = 5V)

4
Run IDD (mA)

0
–40 0 25 85 105 125
Temperature (°C)
Note: ICS is configured to FEI.

Figure 3-6. Typical Run IDD vs. Temperature (VDD = 5V; fbus = 8MHz)

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 15
Chapter 3 Electrical Characteristics

50
STOP2
STOP3
40
STOP IDD (µA)
30

20

10

0
–40 0 25 85 105 125
Temperature (°C)
Figure 3-7. Typical Stop IDD vs. Temperature (VDD = 5V)

3.8 External Oscillator (XOSC) Characteristics

NOTE
The MC9S08SC4 series supports a narrower low frequency external reference range than
the standard ICS specification. All references to range "31.25 kHz to 39.0625 kHz" in this
section should be limited to " 32.0 kHz to 38.4 kHz".

MC9S08SC4 MCU Series Data Sheet, Rev. 4

16 Freescale Semiconductor
 Chapter 3 Electrical Characteristics

Table 3-8. Oscillator Electrical Specifications (Temperature Range = –40 to 125°C Ambient)

Num C Rating Symbol Min Typ1 Max Unit

Oscillator crystal or resonator (EREFS = 1, ERCLKEN = 1)
Low range (RANGE = 0) flo 32 — 38.4 kHz
2
1 C High range (RANGE = 1) FEE or FBE mode fhi 1 — 5 MHz
High range (RANGE = 1, HGO = 1) FBELP mode fhi-hgo 1 — 16 MHz
High range (RANGE = 1, HGO = 0) FBELP mode fhi-lp 1 — 8 MHz
Load capacitors See crystal or resonator
2 — C1, C2
manufacturer’s recommendation
Feedback resistor
3 — Low range (32 kHz to 100 kHz) RF — 10 — MΩ
High range (1 MHz to 16 MHz) — 1 —
Series resistor
Low range, low gain (RANGE = 0, HGO = 0) — 0 —
Low range, high gain (RANGE = 0, HGO = 1) — 100 —
High range, low gain (RANGE = 1, HGO = 0) — 0 —
4 — RS kΩ
High range, high gain (RANGE = 1, HGO = 1)
≥ 8 MHz — 0 0
4 MHz — 0 10
1 MHz — 0 20
Crystal start-up time 3
Low range, low gain (RANGE = 0, HGO = 0) t — 200 —
CSTL-LP

5 T Low range, high gain (RANGE = 0, HGO = 1) t — 400 — ms

CSTL-HGO
High range, low gain (RANGE = 1, HGO = 0)4 t — 5 —
CSTH-LP
High range, high gain (RANGE = 1, HGO = 1)4 t — 15 —
CSTH-HGO
Square wave input clock frequency (EREFS = 0, ERCLKEN = 1)
6 T FEE or FBE mode 2 fextal 0.03125 — 5 MHz
FBELP mode 0 — 40 MHz
1 Typical data was characterized at 5.0 V, 25°C or is recommended value.
2 The input clock source must be divided using RDIV to within the range of 31.25 kHz to 39.0625 kHz.
3 This parameter is characterized and not tested on each device. Proper PC board layout procedures must be followed to achieve

specifications. This data will vary based upon the crystal manufacturer and board design. The crystal should be characterized
by the crystal manufacturer.
4 4 MHz crystal.

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 17
 Chapter 3 Electrical Characteristics

MCU
EXTAL XTAL

RS
RF

C1 Crystal or Resonator C2

3.9 Internal Clock Source (ICS) Characteristics

Table 3-9. ICS Frequency Specifications (Temperature Range = –40 to 125°C Ambient)

Num C Rating Symbol Min Typical Max Unit

Internal reference frequency - factory trimmed
1 P fint_ft — 31.25 — kHz
at VDD = 5 V and temperature = 25°C
2 T Internal reference frequency - untrimmed1 fint_ut 25 36 41.66 kHz
3 P Internal reference frequency - user trimmed fint_t 31.25 — 39.0625 kHz
4 T Internal reference startup time tirefst — — 6 μs
1
DCO output frequency range - untrimmed
5 — value provided for reference assumes: fdco_ut 25.6 36.86 42.66 MHz
fdco_ut = 1024 x fint_ut
6 D DCO output frequency range - trimmed fdco_t 32 — 40 MHz
Resolution of trimmed DCO output frequency at fixed
7 D Δfdco_res_t — ± 0.1 ± 0.2 %fdco
voltage and temperature (using FTRIM)
Resolution of trimmed DCO output frequency at fixed
8 D Δfdco_res_t — ± 0.2 ± 0.4 %fdco
voltage and temperature (not using FTRIM)
Total deviation from actual trimmed DCO output + 0.5
9 D Δfdco_t — ± 2.0 %fdco
frequency over voltage and temperature – 1.0
Total deviation of trimmed DCO output frequency over
10 D Δfdco_t — ± 0.5 ±1 %fdco
fixed voltage and temperature range of 0°C to 70 °C
11 D FLL acquisition time 2 tacquire — — 1 ms
12 D DCO output clock long term jitter (over 2mS interval) 3 CJitter — 0.02 0.2 %fdco
1 TRIM register at default value (0x80) and FTRIM control bit at default value (0x0).
2
This specification applies to any time the FLL reference source or reference divider is changed, trim value changed or changing
from FLL disabled (FBELP, FBILP) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is being used as the reference,
this specification assumes it is already running.
3 Jitter is the average deviation from the programmed frequency measured over the specified interval at maximum f
BUS.
Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal. Noise injected
into the FLL circuitry via VDD and VSS and variation in crystal oscillator frequency increase the CJitter percentage for a given
interval.

MC9S08SC4 MCU Series Data Sheet, Rev. 4

18 Freescale Semiconductor
 Chapter 3 Electrical Characteristics

3.10 ADC Characteristics

Table 3-10. ADC Operating Conditions

Characteristic Conditions Symb Min Typ1 Max Unit Comment

Supply voltage Absolute VDDA2 2.7 — 5.5 V —

Input Voltage — VADIN VREFL2 — VREFH 2

V —

Input — CADIN — 4.5 5.5 pF —

Capacitance

Input — RADIN — 3 5 kΩ —
Resistance

Analog Source 10 bit mode RAS External to MCU

Resistance fADCK > 4MHz — — 5 kΩ
fADCK < 4MHz — — 10

8 bit mode (all valid fADCK) — — 10

ADC High Speed (ADLPC=0) fADCK 0.4 — 8.0 MHz —

Conversion
Clock Low Power (ADLPC=1) 0.4 — 4.0
Frequency
1
Typical values assume VDDA = 5.0 V, Temp = 25°C, fADCK=1.0 MHz unless otherwise stated. Typical values are for
reference only and are not tested in production.
2
VDDA/VREFH and VSSA/VREFL, are derived from VDD and VSS respectively.

SIMPLIFIED
INPUT PIN EQUIVALENT
CIRCUIT ZADIN
SIMPLIFIED
Pad
ZAS leakage CHANNEL SELECT
due to CIRCUIT
ADC SAR
input ENGINE
RAS RADIN
protection
+
VADIN
–
CAS
VAS +
–

RADIN

INPUT PIN
RADIN

INPUT PIN
RADIN

INPUT PIN CADIN

Figure 3-8. ADC Input Impedance Equivalency Diagram

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 19
Chapter 3 Electrical Characteristics

Table 3-11. ADC Characteristics

Characteristic Conditions C Symb Min Typ1 Max Unit Comment

Supply Current — T IDDA — 133 — μA —

ADLPC=1
ADLSMP=1
ADCO=1

Supply Current — T IDDA — 218 — μA —

ADLPC=1
ADLSMP=0
ADCO=1

Supply Current — T IDDA — 327 — μA —

ADLPC=0
ADLSMP=1
ADCO=1

Supply Current — T IDDA — 0.582 1 mA —

ADLPC=0
ADLSMP=0
ADCO=1

ADC High Speed (ADLPC=0) P fADACK 2 3.3 5 MHz tADACK =

Asynchronous 1/fADACK
Clock Source Low Power (ADLPC=1) 1.25 2 3.3

Conversion Short Sample P tADC — 20 — ADCK See ADC

Time (ADLSMP=0) cycles chapter in
(Including MC9S08SC4
sample time) Long Sample — 40 — Reference
(ADLSMP=1) Manual for
conversion
Sample Time Short Sample P tADS — 3.5 — ADCK
time
(ADLSMP=0) cycles
variances
Long Sample — 23.5 —
(ADLSMP=1)

Total 10 bit mode P ETUE — ±1.5 ±3.5 LSB Includes

Unadjusted quantization
Error 8 bit mode — ±0.7 ±1.5

Differential 10 bit mode P DNL — ±0.5 ±1.0 LSB

Non-Linearity
8 bit mode — ±0.3 ±0.5

Monotonicity and No-Missing-Codes guaranteed

Integral 10 bit mode C INL — ±0.5 ±1.0 LSB

Non-Linearity
8 bit mode — ±0.3 ±0.5

Zero-Scale 10 bit mode P EZS — ±1.5 ±2.5 LSB VADIN = VSSA

Error
8 bit mode — ±0.5 ±0.7

Full-Scale 10 bit mode P EFS — ±1 ±1.5 LSB VADIN = VDDA

Error
8 bit mode — ±0.5 ±0.5

MC9S08SC4 MCU Series Data Sheet, Rev. 4

20 Freescale Semiconductor
 Chapter 3 Electrical Characteristics

Table 3-11. ADC Characteristics

Characteristic Conditions C Symb Min Typ1 Max Unit Comment

Quantization 10 bit mode D EQ — — ±0.5 LSB —

Error
8 bit mode — — ±0.5

Input Leakage 10 bit mode D EIL — ±0.2 ±2.5 LSB Pad leakage2
Error * RAS
8 bit mode — ±0.1 ±1

Temp Sensor −40°C– 25°C D m — 3.266 —

Slope
mV/°C —
25°C– 125°C — —
3.638

Temp Sensor 25°C D VTEMP2 — 1.396 — V —

Voltage 5
1
Typical values assume VDDA = 5.0V, Temp = 25C, fADCK=1.0MHz unless otherwise stated. Typical values are for reference only
and are not tested in production.
2 Based on input pad leakage current. Refer to pad electricals.

3.11 AC Characteristics
This section describes AC timing characteristics for each peripheral system.

3.11.1 Control Timing

Table 3-12. Control Timing

Num C Rating Symbol Min Typ1 Max Unit

1 D Bus frequency (tcyc = 1/fBus) fBus dc — 20 MHz

2 P Internal low power oscillator period tLPO 700 975 1500 μs

3 D External reset pulse width2 textrst 100 — — ns

4 D Reset low drive3 trstdrv 66 x tcyc — — ns

Pin interrupt pulse width
5 D Asynchronous path2 tILIH, tIHIL 100 — — ns
Synchronous path4 1.5 x tcyc
Port rise and fall time —
Low output drive (PTxDS = 0) (load = 50 pF)5 tRise, tFall ns
Slew rate control disabled (PTxSE = 0) — 40 —
Slew rate control enabled (PTxSE = 1) — 75 —
6 C
Port rise and fall time —
High output drive (PTxDS = 1) (load = 50 pF)6 tRise, tFall ns
Slew rate control disabled (PTxSE = 0) — 11 —
Slew rate control enabled (PTxSE = 1) — 35 —
1 Typical values are based on characterization data at VDD = 5.0V, 25°C unless otherwise stated.

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 21
Chapter 3 Electrical Characteristics

2
This is the shortest pulse that is guaranteed to be recognized as a reset pin request. Shorter pulses are not guaranteed to
override reset requests from internal sources. Refer to Figure 3-9.
3
When any reset is initiated, internal circuitry drives the reset pin low for about 66 cycles of tcyc. After POR reset the bus clock
frequency changes to the untrimmed DCO frequency (freset = (fdco_ut)/4) because TRIM is reset to 0x80 and FTRIM is reset
to 0, and there is an extra divide-by-two because BDIV is reset to 0:1. After other resets trim stays at the pre-reset value.
4
This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or
may not be recognized. In stop mode, the synchronizer is bypassed so shorter pulses can be recognized in that case.
5
Timing is shown with respect to 20% VDD and 80% VDD levels. Temperature range –40°C to 125°C.

textrst

RESET PIN

Figure 3-9. Reset Timing

3.11.2 TPM Module Timing

Synchronizer circuits determine the shortest input pulses that can be recognized or the fastest clock that can be used as the
optional external source to the timer counter. These synchronizers operate from the current bus rate clock.
Table 3-13. TPM Input Timing

Num C Rating Symbol Min Max Unit

1 — External clock frequency fTEXT dc 1/4 fop MHz

2 — External clock period tTEXT 4 — tCYC

3 — External clock high time tTCLKH 1.5 — tCYC

4 — External clock low time tTCLKL 1.5 — tCYC

5 — Input capture pulse width fICPW 1.5 — tCYC

MC9S08SC4 MCU Series Data Sheet, Rev. 4

22 Freescale Semiconductor
 Chapter 3 Electrical Characteristics

tCYC

ipg_clk

tTEXT

EXTERNAL
CLOCK
tTCLKH tTCLKL

tICPW

INPUT
CAPTURE

3.12 Flash Specifications

This section provides details about program/erase times and program-erase endurance for the FLASH memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory section.
Table 3-14. FLASH Characteristics

Num C Characteristic Symbol Min Typical Max Unit

1 — Supply voltage for program/erase Vprog/erase 4.5 — 5.5 V

2 — Supply voltage for read operation VRead 4.5 — 5.5 V
3 — Internal FCLK frequency1 fFCLK 150 — 200 kHz
4 — Internal FCLK period (1/fFCLK) tFcyc 5 — 6.67 μs
5 — Byte program time (random location)2 tprog 9 tFcyc
2
6 — Byte program time (burst mode) tBurst 4 tFcyc
7 — Page erase time2 tPage 4000 tFcyc
8 — Mass erase time2 tMass 20,000 tFcyc
3
Program/erase endurance
9 C TL to TH = –40°C to +125°C nFLPE 10,000 — — cycles
T = 25°C — 100,000 —
10 C Data retention4 tD_ret 15 100 — years
1 The frequency of this clock is controlled by a software setting.
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
3 Typical endurance for FLASH is based on the intrinsic bit cell performance. For additional information on how Freescale

defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated

to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 23
Chapter 3 Electrical Characteristics

3.13 EMC Performance

Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.

3.13.1 Radiated Emissions

Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller
are measured in a TEM cell in two package orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal to the reported
emissions levels.
Table 3-15. Radiated Emissions, Electric Field

Level1
Parameter Symbol Conditions Frequency fOSC/fBUS Unit
(Max)

VRE_TEM VDD = 5 V 0.15 – 50 MHz 4 MHz crystal –7 dBμV

TA = +25oC 8 MHz bus
package type 50 – 150 MHz –11
16-TSSOP 150 – 500 MHz –11
Radiated emissions,
electric field 500 – 1000 MHz –10

IEC Level N —

SAE Level 1 —

1
Data based on qualification test results.

MC9S08SC4 MCU Series Data Sheet, Rev. 4

24 Freescale Semiconductor
 Chapter 4 Ordering Information and Mechanical Drawings

Chapter 4
Ordering Information and Mechanical Drawings
4.1 Ordering Information
This section contains ordering information for MC9S08SC4 device.
Table 4-1. Device Numbering System

Memory Available
Device Number1
FLASH RAM Packages2

S9S08SC4E0MTG 4K 256 16 TSSOP

1
See MC9S08SC4 Reference Manual for a complete description of modules.
included on each device.
2 See Table 4-2 for package information.

4.1.1 Device Numbering Scheme

S 9 S08 SC 4 E0 M TG R
Status Tape and Reel Suffix (optional)
- S = Auto Qualified
Package Designator
Two letter descriptor
Main Memory Type (refer to Table 4-2).
- 9 = Flash-based
Temperature Option
Core - C = –40 to 85 °C
- V = –40 to 105 °C
S Family - M = –40 to 125 °C

Memory Size Mask Set Identifier

- 4 Kbytes - Identifies mask.

4.2 Package Information

Table 4-2. Package Information

Pin Count Type Designator Case Number Document No.

16 TSSOP TG 948F-01 98ASH70247A

4.3 Mechanical Drawings

The following pages are mechanical drawings for the package described in Table 4-2.

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 25
Chapter 4 Ordering Information and Mechanical Drawings

MC9S08SC4 MCU Series Data Sheet, Rev. 4

26 Freescale Semiconductor
 Chapter 4 Ordering Information and Mechanical Drawings

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 27
Chapter 4 Ordering Information and Mechanical Drawings

MC9S08SC4 MCU Series Data Sheet, Rev. 4

28 Freescale Semiconductor
 Chapter 5 Revision History

Chapter 5
Revision History

To provide the most up-to-date information, the version of our documents on the World Wide Web will be the most current.
Your printed copy may be an earlier revision. To verify you have the latest information available, refer to:
http://freescale.com/

The following revision history table summarizes changes contained in this document.

Revision Revision
Description of Changes
Number Date

1 9/2008 • Initial Release.

2 7/2009 • Incorporated editing updates.

• Added C and V temperature ranges at page 1.
• Updated Section 3.10, “ADC Characteristics”.
• Updated Table 3-3, Table 3-6, Table 3-7, Table 3-9, Table 3-12, Table 3-15 and Section
4.1.1, “Device Numbering Scheme”.
• Added actual package mechanical drawings.
• Updated Figure 3-5, Figure 3-6.
• Removed Transient Susceptibilty Section.
• Updated disclaimer page.

3 3/2010 • Updated TSSOP-16 package diagram, clarified ICS deviation, SCI LIN features at page
1.
• Updated Table 3-6, Table 3-7, Table 3-9, Table 3-12, Table 4-1.
• Updated Figure 3-5 and Figure 3-7.

4 6/2010 • Document changed from Advance Information to Technical Data

• Updated footnotes in Table 3-7
• Updated Figure 3-5

MC9S08SC4 MCU Series Data Sheet, Rev. 4

Freescale Semiconductor 29
Chapter 5 Revision History

MC9S08SC4 MCU Series Data Sheet, Rev. 4

30 Freescale Semiconductor
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MC9S08SC4
Rev.4
6/2010