University of Technology Lecture Note 2

Electrical Engineering Department Introduction to PSDs

Electrical Engineering Division Page 1 of 10
EG 405: Power Electronics Dr. Oday A. Ahmed

Power semiconductor devices

Power semiconductor devices constitute the heart of modern power electronic apparatus. The
main function of the power semiconductor devices (PSD) in the power converter system are
used as on/off switches to control the energy transfer between the source and the load.
The Basic representation of the power semiconductor device can be represented as a traditional
switch as shown in Fig.1.

Fig.1

Figure 2 below shows a simple feature of using PSD as a switch in converting energy between
the source and the load.
S S S

Vo Vo
Vs Vs Vs
Vo

Mode I: S → ON Mode II: S→ OFF

Vs
Vo= Vs for T=ton Vo= 0 for T=toff

T: Switching cycle
Vo
Vs Average output voltage
toff is less than DC input
Fig.2 ton
T voltage Vs

The difference between ideal switch and practical switch

As mentioned before, PSDs use as switches in PE converters. The switch in practical has
different features in practical over its features in ideal case. This can be recognize as described
below:

Ideal Switch
If the PSD considered working as ideal switch then it should be:
■ When switch is OFF, i =0 and -∞≤v≤+∞ which implies that PON=0
 University of Technology Lecture Note 2
Electrical Engineering Department Introduction to PSDs
Electrical Engineering Division Page 2 of 10
EG 405: Power Electronics Dr. Oday A. Ahmed

■ When switch is ON, V =0 and -∞≤ I ≤+∞ which implies that PON=0

It should be possible to easily turn the switch ON and OFF by applying an appropriate control
signal.

Control Signal

Features of Ideal Switch

 The power required to keep the switch in a particular state,
or to switch it ON/OFF should be infinitesimally small.
 Should be able to change state instantaneously which
implies that tON=0, tOFF=0 and PSW=0 (see Fig.3)
 Should be able to withstand infinite temperature that
means that its power handling capability is infinite.
Requires very low thermal impedance from internal
junction to ambient, RJA=0, so that it transmits heat Fig.3
easily to the ambient
 Should be able to withstand infinite value of di=dt
during turn ON and infinite value of dv=dt during turn
OFF.
 Current limitless when on-either direction.
 No limit on amount of voltage across switch when off (Blocking voltage infinite
(forward or reverse)).
In real life, there exists nothing like that!
University of Technology Lecture Note 2
Electrical Engineering Department Introduction to PSDs
Electrical Engineering Division Page 3 of 10
EG 405: Power Electronics Dr. Oday A. Ahmed

Practical Switch

Although Semiconductor Industry has produced amazing devices, the “real world” switch is
not ideal.
 Limited conduction current when the switch on,
 Limited blocking voltage when the switch is in the off
 Limited switching speed that caused by the finite turn-on and turn-off times
 Real world (Semiconductor) switches are charge driven
 Finite, nonzero on-state and off-state resistances (There is a I2R loss when on and
some leakage when off (very small).
A real switch needs a finite ton for ON switching and toff for OFF switching (see Fig.5). These
finite switching times have two major consequences:

► Limits the highest repetitive switching frequencies possible

► Introduce additional power dissipation in the switches themselves.

Depending on the nature of the current and voltage waveforms during the transition, the peak
power can reach a relatively large magnitude. The energy dissipation in the switch is equal to
the area shown under the power waveform.

Fig.4
The total energy J dissipated in the switch in one switching cycle T is given by the sum of the
areas under the power waveform during ton and toff, as shown in the figure 5:
University of Technology Lecture Note 2
Electrical Engineering Department Introduction to PSDs
Electrical Engineering Division Page 4 of 10
EG 405: Power Electronics Dr. Oday A. Ahmed

Fig.5

The average switching power loss is therefore proportional to the switching frequency fs and
is given in watt as:
= ×
Including the ON and OFF power losses to the switching losses, the total average power loss
over a time interval T is:
Total power loss= conduction loss+ off-state loss + (turn-off loss+ turn-on loss)

Example 1: Derive an expression for instantaneous power p(t)=Vsw*isw. Also, determine the
average power dissipated in one switching cycle.
Solution:
University of Technology Lecture Note 2
Electrical Engineering Department Introduction to PSDs
Electrical Engineering Division Page 5 of 10
EG 405: Power Electronics Dr. Oday A. Ahmed

ton toff

Ts- ton- toff

Ts

⎧ − + 0 ≤ ≤
⎪
⎪
= ≤ ≤( − )
⎨
⎪
⎪− − − + ( − ) ≤ ≤
⎩

−
⎧ − − + 0 ≤ ≤
⎪
⎪
⎪
= ≤ ≤( − )
⎨
⎪
⎪
⎪− − ( − )
− + ( − ) ≤ ≤
⎩

The instantaneous power is equal to p(t)=Vsw*isw. By assuming the Ioff and VON = 0,
then:
University of Technology Lecture Note 2
Electrical Engineering Department Introduction to PSDs
Electrical Engineering Division Page 6 of 10
EG 405: Power Electronics Dr. Oday A. Ahmed

⎧ ( ) =− ( − ) 0 ≤ ≤
⎪
⎪
( )= ( ) = ≤ ≤( − )
⎨
⎪
⎪ ( ) =− −( − ) ( − ) ( − ) ≤ ≤
⎩

The average switching power loss over one cycle can be given as:

1
= ( )

1
= ( ) + ( ) + ( )

= + + ( − + )
6

Hence,

= . +
6
Psw= Switching power loss in watt
ION= Forward Current in Amps.
VOFF= Blocking voltage in volt
fs= switching frequency in Hz.
(tON+tOff)= switching time in second

=( ) .( − +
Pc= Conduction power loss in watt
ION= Maximum Forward Current in Amps.
VON= Maximum Forward voltage in volt
fs= switching frequency in Hz.
Ts - (tON+tOff)= Conduction time in second
University of Technology Lecture Note 2
Electrical Engineering Department Introduction to PSDs
Electrical Engineering Division Page 7 of 10
EG 405: Power Electronics Dr. Oday A. Ahmed

For Practical Switches, you have to know that:

Conduction loss : I2R loss, R being the resistance of the switch

ROn= 0 for ideal

switch. ROn= its value based on the voltage
rating of the switch and its
structure. For a good switch, Ron
should be small. Nevertheless, its
not ignored.

Voltage blocking – High voltage can be sustained across the switch during OFF state. Surely,
it depends on device dimension.

VB=Voff OFF

Terminals of a PSD

Control
terminal

Control
Signal
Common
terminal

Control signal from drive circuit must be connected

between the control terminal and a fixed power circuit
terminal (therefore called common terminal)

Note: The difference between PSD and low-power semiconductor device

 Large voltage in the off state, High current capability in the on state, and operate at lower
switching speeds
University of Technology Lecture Note 2
Electrical Engineering Department Introduction to PSDs
Electrical Engineering Division Page 8 of 10
EG 405: Power Electronics Dr. Oday A. Ahmed

Important Switch Parameters

1. Breakdown voltage rating
2. On-resistance/on-state resistance and specific on-resistance
3. Forward conduction drop
4. Forward blocking capability
5. Reverse blocking capability
6. Rise time
7. Fall time
A good way to get more familiar with these things is to look at datasheets of power devices.
They can be found on the website of device manufactures like International Rectifier,
Infineon Technologies, Ixys Corporation etc.

Classification of PSD
NOTE; in general, the power semiconductor devices classified into three switch types:
■ Uncontrolled: Diodes (a switch controlled by the power circuit)

■ Semi-controlled:
Thyristors, SCR (can
be switched on by a
signal but only the
power circuit can turn
it off)

■ Fully
Controlled:
Transistors,
GTO, SIT, MCT
(can be switched
on and off by a
signal)
University of Technology Lecture Note 2
Electrical Engineering Department Introduction to PSDs
Electrical Engineering Division Page 9 of 10
EG 405: Power Electronics Dr. Oday A. Ahmed

Device Choices
Which of the power switches is chosen will be determined by cost, availability of rating to
suit the requirement and the ease with which it can be turned 'on' and 'off'.
► MOSFETS and IGBTs have the simplest driving requirements; they are voltage
controlled and the gate current is virtually zero during the 'on' period.
► MOSFETS and IGBTs lack the reverse blocking capability which make the SCR,
TRIAC and GTO so suitable for AC mains power applications.
► GTOs are most suited for high-power applications requiring forced commutation.
► IGBTs are potential replacements for MOSFETS and BJTs, respectively, in low and
medium power applications.

Power-handling capability Frequency-handling capability

Choice of power switch based on each switch specifications is depicted in the table below:
University of Technology Lecture Note 2
Electrical Engineering Department Introduction to PSDs
Electrical Engineering Division Page 10 of 10
EG 405: Power Electronics Dr. Oday A. Ahmed