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An 60008

RF amplifiers are designed to operate reliably when used as specified but can be damaged by electrical overstress. They utilize sensitive semiconductor components. The document outlines several precautions amplifier users should take to avoid damaging amplifiers through excessive power input, improper load or voltage connections, or electrostatic discharge. These include following the specified connection sequence and not exceeding maximum input power levels. Precautions are particularly important when using high power devices that could introduce transients or signals into an amplifier.

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44 views2 pages

An 60008

RF amplifiers are designed to operate reliably when used as specified but can be damaged by electrical overstress. They utilize sensitive semiconductor components. The document outlines several precautions amplifier users should take to avoid damaging amplifiers through excessive power input, improper load or voltage connections, or electrostatic discharge. These include following the specified connection sequence and not exceeding maximum input power levels. Precautions are particularly important when using high power devices that could introduce transients or signals into an amplifier.

Uploaded by

Clena
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Operating precautions for amplifiers

RF Amplifiers are designed to be reliable when operated under specified conditions. They find many
applications because they provide maximum performance in characteristics such as frequency
bandwidth, output power, and noise figure. To do this, amplifiers utilize high performance
semiconductor components, which are sensitive and can be damaged if subjected to EOS (electrical
overstress). This is particularly the case with multistage connectorized amplifiers, which are used as
instrumentation or system components.

The risk of damage due to ESD (electrostatic discharge) is small in connectorized amplifiers, because
a charged object would have to come into contact with the center conductor of the input or output
connector. However, other sources of EOS can enter the amplifier by way of signal paths in the
system. For example, the most frequent causes of user-induced failure in ZHL-series amplifiers are
(a) excessive power applied to the input, and (b) improper sequencing of load connection - DC
voltage - RF signal. The locations of the resulting damage -- burned out first or last stage,
respectively -- have been observed with equal probability. Another possible cause of EOS failure is
excessive steady state or momentary voltage applied to the DC terminal.

Several of the recently introduced high power amplifiers such as the LZY and ZVE series have some
or all of the following self-protecting features:

z Protection from transients caused by shorting and unshorting the DC terminal to the case.
z Reversible shut-down of output stage at high RF input power.
z Over-temperature shut-down with automatic recovery.
z Immunity to reverse-polarity DC.
z Immunity to a limited-time short at the output, or immunity to load connection and
disconnection, with DC and full RF input applied.

It must be emphasized, however, that excessive power applied to the input of an amplifier will
damage the input stage even in models which have internal protection for the later stages. Most
amplifiers having large-size cases are marked with a caution as a reminder to users: Do not exceed
(specified power in dBm) at input ZHL-series amplifiers are additionally marked with directions:

z To connect: z To disconnect:
{ 1. Connect output load { 1. Remove RF input
2. Apply DC Voltage 2. Remove DC voltage
3. Apply RF input 3. Remove load

Precautions against EOS are particularly important when high voltage or high power devices are
used, such as when loading a semiconductor-based amplifier with a TWT (traveling wave tube).
Signals and DC transients might be conducted into the RF input and output ports or the DC terminal,
and radiated RF signals can enter through housing seams.

Finally, a word about applying pulsed signals: Mini-Circuits RF amplifiers operate in Class A; their
maximum power ratings are generally based upon instantaneous voltage or current limitations of
internal components. Therefore, amplifier ratings must be applied to the peak power of pulsed signals
rather than the average power.
Last Updated: 09/08/1999

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