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This document provides information on Microsemi's 1N957B-1 to 1N992B-1 series of 0.5 watt Zener voltage regulators. These are axial-leaded glass DO-35 Zeners available from 6.8 to 200 volts in 5%, 2% and 1% tolerance versions. Military qualified versions per MIL-PRF-19500/117 are available from 1N962B-1 to 1N992B-1. They feature an internal metallurgical bond and are available in both military and commercial RoHS compliant versions.

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0% found this document useful (0 votes)
26 views8 pages

Lds 0287

This document provides information on Microsemi's 1N957B-1 to 1N992B-1 series of 0.5 watt Zener voltage regulators. These are axial-leaded glass DO-35 Zeners available from 6.8 to 200 volts in 5%, 2% and 1% tolerance versions. Military qualified versions per MIL-PRF-19500/117 are available from 1N962B-1 to 1N992B-1. They feature an internal metallurgical bond and are available in both military and commercial RoHS compliant versions.

Uploaded by

asif.binance1988
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 8

1N957B-1 – 1N992B-1

Qualified Levels*:
Available on Silicon 500 mW Zener Diodes JAN, JANTX, and
JANTXV
commercial
versions Qualified per MIL-PRF-19500/117

DESCRIPTION
The popular 1N957B-1 through 1N992B-1 series of 0.5 watt Zener voltage regulators provides
a selection from 6.8 to 200 volts in a standard 5%, 2% and 1% tolerance versions. These
axial-leaded glass DO-35 Zeners feature an internal metallurgical bond and are available in
military qualified and commercial RoHS compliant versions. Military qualified versions are
available on the 1N962B-1 through 1N992B-1 range of part numbers.

Important: For the latest information, visit our website http://www.microsemi.com.


FEATURES
• JEDEC registered 1N957B to 1N992B number series.
DO-35 (DO-204AH)
• Internal metallurgical bond.
• *JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/117 for part numbers
Package
1N962B-1 thru 1N992B-1.
• Upscreening is available in reference to MIL-PRF-19500 for the range of 1N957B-1 through Also available in:
1N961B-1.
DO-213AA package
(See part nomenclature for all available options.) (MELF surface mount)
• RoHS compliant versions available (commercial grade only). 1N957BUR-1 –
1N992BUR-1
APPLICATIONS / BENEFITS
• Regulates voltage over a broad operating current and temperature range.
• Extensive selection from 6.8 to 200 V.
• Standard voltage tolerance is ± 5% with optional tighter tolerances of ± 2% or 1%.
• Flexible axial-lead mounting terminals.
• Non-sensitive to ESD per MIL-STD-750 method 1020.
• Minimal capacitance.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS

Parameters/Test Conditions Symbol Value Unit


Operating and Storage Temperature T J and T STG -65 to +175 ºC
Thermal Resistance Junction-to-Lead R ӨJL 250 ºC/W
@ .375 inch (9.53 mm) lead length from body
Thermal Resistance Junction-to-Ambient when R ӨJA 300 ºC/W MSC – Lawrence
(1)
mounted on PCB
6 Lake Street,
Steady-State Power Dissipation Lawrence, MA 01841
(2)
@ T L = +50°C .375 inch (9.53 mm) from body PD 0.5 W Tel: 1-800-446-1158 or
@ T A = 55°C mounted on PCB 0.4 (978) 620-2600
Forward Voltage @ I F = 200 mA Fax: (978) 689-0803
1N957 – 1N985 VF 1.1 V
MSC – Ireland
1N986 – 1N992 1.3
o Gort Road Business Park,
Solder Temperature @ 10 s T SP 260 C Ennis, Co. Clare, Ireland
NOTES: 1. See figures 1 and 2 for derating curves. T A = +75°C on an FR4 PC board with 1 oz copper Tel: +353 (0) 65 6840044
metalization. Fax: +353 (0) 65 6822298
2. Both ends of case or diode body to heat sink at L = .375 inch (9.53 mm). Derate I Z to 0.0 mA at
+175°C. Website:
www.microsemi.com

T4-LDS-0287, Rev. 1 (121795) ©2012 Microsemi Corporation Page 1 of 8


1N957B-1 – 1N992B-1

MECHANICAL and PACKAGING


• CASE: Hermetically sealed axial-lead glass DO-35 (DO-204 AH) package.
• TERMINALS: Tin-lead (Sn/Pb) or RoHS compliant annealed matte-tin plating (on commercial grade only). Solderable per MIL-
STD-750, method 2026.
• MARKING: Part number.
• POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end for
Zener regulation.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: 0.2 grams
• See Package Dimensions on last page.

PART NOMENCLATURE

1N957B-1 – 1N961B-1 only:


1N957 B -1 (e3)

JEDEC type number RoHS Compliance


(see Electrical Characteristics e3 = RoHS compliant
table) Blank = non-RoHS compliant

Zener Voltage Tolerance Metallurgically Bonded


B = 5%
C = 2%
D = 1%

1N962B-1 – 1N992B-1 only:

JAN 1N962 B -1 (e3)

Reliability Level RoHS Compliance


JAN = JAN level e3 = RoHS compliant (available
JANTX = JANTX level on commercial grade only)
JANTXV = JANTXV level Blank = non-RoHS compliant
Blank = Commercial
Metallurgically Bonded
JEDEC type number
(see Electrical Characteristics
table)

Zener Voltage Tolerance


B = 5%
C = 2%
D = 1%

T4-LDS-0287, Rev. 1 (121795) ©2012 Microsemi Corporation Page 2 of 8


1N957B-1 – 1N992B-1

SYMBOLS & DEFINITIONS


Symbol Definition
IR Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
I Z , I ZT , I ZK Regulator Current: The dc regulator current (I Z ), at a specified test point (I ZT ), near breakdown knee (I ZK ).
I ZM Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
I ZSM Maximum Zener Surge Current: The non-repetitive peak value of Zener surge current at a specified wave form.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VR Reverse Voltage: The reverse voltage dc value, no alternating component.
VZ Zener Voltage: The Zener voltage the device will exhibit at a specified current (I Z ) in its breakdown region.
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
Z ZT or Z ZK
specified rms current modulation (typically 10% of I ZT or I ZK ) and superimposed on I ZT or I ZK respectively.

T4-LDS-0287, Rev. 1 (121795) ©2012 Microsemi Corporation Page 3 of 8


1N957B-1 – 1N992B-1

ELECTRICAL CHARACTERISTICS

NOMINAL ZENER MAXIMUM ZENER MAXIMUM DC MAXIMUM MAXIMUM MAXIMUM


ZENER TEST IMPEDANCE ZENER SURGE REVERSE TEMPERATURE
JEDEC TYPE VOLTAGE CURRENT Z ZT CURRENT CURRENT LEAKAGE COEFFICIENT
NUMBER (NOTE 2) (NOTE 4) (NOTE 5) CURRENT
(NOTE 1)
VZ I ZT ZZ Z ZK @ I ZK I ZM I ZSM IR @ VR α VZ
Volts mA Ohms Ohms µA mA mA µA Volts %/°C
1N957B-1 6.8 18.5 4.5 700 250 55 300 150 5.2 +0.050
1N958B-1 7.5 16.5 5.5 700 250 50 275 75 5.7 +0.058
1N959B-1 8.2 15.0 6.5 700 250 45 250 50 6.2 +0.065
1N960B-1 9.1 14.0 7.5 700 250 41 225 25 6.9 +0.068
1N961B-1 10 12.5 8.5 700 250 38 200 10 7.6 +0.075
1N962B-1 11 11.5 9.5 700 250 35 590 1.0 8.4 +0.073
1N963B-1 12 10.5 11.5 700 250 32 540 1.0 9.1 +0.076
1N964B-1 13 9.5 13.0 700 250 30 500 0.5 9.9 +0.079
1N965B-1 15 8.5 16 700 250 26 433 0.5 11 +0.082
1N966B-1 16 7.8 17 700 250 25 406 0.5 12 +0.083
1N967B-1 18 7.0 21 750 250 21 361 0.5 14 +0.085
1N968B-1 20 6.2 25 750 250 19 325 0.5 15 +0.086
1N969B-1 22 5.6 29 750 250 17 295 0.5 17 +0.087
1N970B-1 24 5.2 33 750 250 16 271 0.5 18 +0.088
1N971B-1 27 4.6 41 750 250 14 240 0.5 21 +0.090
1N972B-1 30 4.2 49 1000 250 13 216 0.5 23 +0.091
1N973B-1 33 3.8 58 1000 250 12 197 0.5 25 +0.092
1N974B-1 36 3.4 70 1000 250 11 180 0.5 27 +0.093
1N975B-1 39 3.2 80 1000 250 9.1 166 0.5 30 +0.094
1N976B-1 43 3.0 93 1000 250 8.8 151 0.5 33 +0.095
1N977B-1 47 2.7 105 1500 250 7.9 138 0.5 36 +0.095
1N978B-1 51 2.5 125 1500 250 7.4 127 0.5 39 +0.096
1N979B-1 56 2.2 150 2000 250 6.9 116 0.5 43 +0.096
1N980B-1 62 2.0 185 2000 250 6.0 105 0.5 47 +0.097
1N981B-1 68 1.8 230 2000 250 5.5 95 0.5 52 +0.097
1N982B-1 75 1.7 270 2000 250 5.1 86 0.5 56 +0.098
1N983B-1 82 1.5 330 3000 250 4.6 79 0.5 62 +0.098
1N984B-1 91 1.4 400 3000 250 4.2 71 0.5 69 +0.099
1N985B-1 100 1.3 500 3000 250 3.7 65 0.5 76 +0.110
1N986B-1 110 1.1 750 4000 250 3.3 59 0.5 84 +0.110
1N987B-1 120 1.0 900 4500 250 3.1 54 0.5 91 +0.110
1N988B-1 130 0.95 1100 5000 250 2.7 50 0.5 99 +0.110
1N989B-1 150 0.85 1500 6000 250 2.4 43 0.5 114 +0.110
1N990B-1 160 0.80 1700 6500 250 2.2 40 0.5 122 +0.110
1N991B-1 180 0.68 2200 7100 250 2.0 36 0.5 137 +0.110
1N992B-1 200 0.65 2500 8000 250 1.8 32 0.5 152 +0.110

NOTES:
1. The JEDEC type numbers shown (B suffix) have a ± 5% tolerance on nominal Zener voltage. The suffix C will have ± 2% tolerance; and suffix
D will have ± 1% tolerance.
2. Zener voltage (V Z ) is measured after the test current has been applied for 20 ± 5 seconds. The device shall be suspended by its leads with
the inside edge of the mounting clips between 0.375” and 0.500” from the body. Mounting clips shall be maintained at temperature of 25 ± 8/ -
2 °C.
3. The Zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc Zener current (I ZT or I ZK ) is
superimposed on I ZT or I ZK . Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve and to eliminate
unstable units. See MicroNote 202 for variation in dynamic impedance with different Zener currents.
4. The values of I ZM are calculated for a ± 5% tolerance on nominal Zener voltage. Allowance has been made for the rise in Zener voltage above
V ZT which results from Zener impedance and the increase in junction temperature as power dissipation approaches 400 mW. In the case of
individual diodes I ZM is that value of current which results in a dissipation of 400 mW at 75°C lead temperature at 3/8” from body.
5. The surge for I ZSM is a square wave or equivalent half-sine wave pulse of 1/120 sec. duration.

T4-LDS-0287, Rev. 1 (121795) ©2012 Microsemi Corporation Page 4 of 8


1N957B-1 – 1N992B-1

GRAPHS
DC Operations Maximum Rating (mW)

T L (ºC) (Leads .375”)


FIGURE 1
Temperature-Power Derating Curve
DC Operations Maximum Rating (mW)

T L (ºC) (PCB)
FIGURE 2
Temperature-Power Derating Curve (PCB mount)

T4-LDS-0287, Rev. 1 (121795) ©2012 Microsemi Corporation Page 5 of 8


1N957B-1 – 1N992B-1

GRAPHS
Theta (°C/W)

Time (s)
FIGURE 3
Thermal Impedance PCB mount
Theta (°C/W)

Time (s)
FIGURE 4
Thermal Impedance

T4-LDS-0287, Rev. 1 (121795) ©2012 Microsemi Corporation Page 6 of 8


1N957B-1 – 1N992B-1

GRAPHS

MAXIMUM POWER DISSIPATION (mW )

LEAD TEMPERATURE (ºC)


(At described lead length)

Inches Millimeters
.000 0.00
.125 3.18
.250 6.35
.375 9.53

FIGURE 5
Maximum Power vs Lead Temperature And Lead Length.

T4-LDS-0287, Rev. 1 (121795) ©2012 Microsemi Corporation Page 7 of 8


1N957B-1 – 1N992B-1

PACKAGE DIMENSIONS

Dimensions
Inch Millimeters
Ltr Min Max Min Max Notes
BD .055 .090 1.40 2.29 3
BL .120 .200 3.05 5.08 3
LD .018 .022 0.46 0.56
LL 1.000 1.500 25.40 38.10
LL 1 .050 1.27 4

NOTES:
1. Dimensions are in inch.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder
but shall not be subject to minimum limit of LD. The BL dimension shall include the entire body including
slugs.
4. Within LL 1 lead, diameter may vary to allow for for flash, lead finish build-up, and minor irregularities other
than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

T4-LDS-0287, Rev. 1 (121795) ©2012 Microsemi Corporation Page 8 of 8

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