RK7002

Transistors

Interface and switching (60V, 115mA)

RK7002

zStructure zDimensions (Unit : mm)

Silicon N-channel
MOSFET

zFeatures
1) Low on-resistance.
2) High-speed switching.
3) Low-voltage drive(5V).

(1) Source
ROHM : SST3 (2) Gate
zApplication E I A J : SOT-23 Abbreviated symbol : RKM (3) Drain
Switching

zEquivalent circuit
Drain

Gate

∗ Gate
Protection
Diode Source

∗ A protection diode has been built in between the

gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages
are exceeded.

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS 60 V
Gate-source voltage VGSS ±20 V
Continuous ID 115 mA
Drain current
Pulsed IDP∗1 800 mA

Reverse drain Continuous IDR 115 mA

current Pulsed IDRP∗1 800 mA
Total power dissipation PD∗2 225 mW
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 1x0.75x0.062 inch glass epoxy board.

Rev.A 1/3
 RK7002
Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Gate-source leakage IGSS − − ±10 µA VGS= ±20V, VDS= 0V
Drain-source breakdown voltage V(BR)DSS 60 − − V ID=10µA, VGS=0V
Zero gate voltage drain current IDSS − − 1.0 µA VDS= 60V, VGS= 0V
Gate threshold voltage VGS (th) 1.0 1.85 2.5 V VDS= 10V, ID= 1mA

Static drain-source on-state − − 7.5 ID= 0.5A, VGS=10V

RDS(on) ∗ Ω
resistance − − 7.5 ID= 0.05A, VGS= 5V
Forward transfer admittance Yfs ∗ 80 − − mS ID= 0.2A, VDS= 10V
Input capacitance Ciss − 25 50 pF VDS= 25V
Output capacitance Coss − 10 25 pF VGS= 0V
Reverse transfer capacitance Crss − 3.0 5.0 pF f= 1MHz
Turn-on delay time td(on)∗ − 12 20 ns ID= 0.2A, VDD 30V, VGS=10V,
Turn-off delay time td(off)∗ − 20 30 ns RL=150Ω, RG=10Ω
∗ Pw≤300µs, Duty cycle≤1%

zElectrical characteristic curves

0.5 1 3
GATE THRESHOLD VOLTAGE : VGS (th) (V)
VDS=10V VDS=10V
10V
5V Pulsed ID=1mA
8V 2.5 Pulsed
0.4
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)

6V
0.1 2
0.3
1.5
4V
0.2
0.01 1
Ta=−25°C
0.1 25°C
75°C 0.5
VGS=3V
125°C
0 0.001 0
0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 −50 −25 0 25 50 75 100 125 150

DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (°C)

Fig.1 Typical Output Characteristics Fig.2 Typical Transfer Characteristics Fig.3 Gate Threshold Voltage vs.
Channel Temperature

100 100 Ta=25°C

VGS=10V VGS=5V 7
ON-STATE RESISTANCE : RDS(on) (Ω)

Pulsed
ON-STATE RESISTANCE : RDS(on) (Ω)

Pulsed
ON-STATE RESISTANCE : RDS(on) (Ω)

Pulsed
6
Ta=125°C Ta=125°C
75°C 75°C 5
10 10 25°C
25°C
STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE

−25°C
STATIC DRAIN-SOURCE

−25°C 4
115mA
3
1 1
2
ID =57.5mA
1

0
0.1 0.1 0 5 10 15 20
0.001 0.01 0.1 1 0.001 0.01 0.1 1
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State
Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Resistance vs. Drain Current( Ι ) Resistance vs. Drain Current (ΙΙ)

Rev.A 2/3
 RK7002
Transistors

6 1 1
VGS=10V VGS=0V Ta=25°C

REVERSE DRAIN CURRENT : IDR (A)

REVERSE DRAIN CURRENT : IDR (A)
ON-STATE RESISTANCE : RDS(on) (Ω)

Pulsed Pulsed Pulsed

5 0.5

0.1 VGS=10V
4
ID =115mA Ta=125°C
STATIC DRAIN-SOURCE

75°C 0V
3 25°C 0.1
57.5mA −25°C

2 0.01 0.05

0 0.001 0.01
−50 −25 0 25 50 75 100 125 150 0 0.5 1.0 1.5 0 0.5 1.0 1.5

CHANNEL TEMPERATURE : Tch (°C) SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.7 Static Drain-Source On-State Fig.8 Reverse Drain Current vs. Fig.9 Reverse Drain Current vs.
Resistance vs. Channel Temperature Source-Drain Voltage ( Ι ) Source-Drain Voltage (ΙΙ)

1 1000 1000
Ta=25°C
FORWARD TRANSFER ADMITTANCE : Yfs (S)

VGS=10V Ta=25°C
Pulsed VGS=0V VDD=30V
f=1MHz VGS=10V
Pulsed tf RG=10Ω

SWITCHING TIME : t (ns)

CAPACITANCE : C (pF)

Pulsed
Ta=−25°C td(off)
0.1 100 100
25°C

Ciss

75°C Coss td(on)

0.01 125°C 10 10

Crss tr

0.001 1 1
0.001 0.01 0.1 1 0.1 1 10 100 0.001 0.01 0.1 1
DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A)

Fig.10 Reverse Drain Current vs. Fig.11 Typical Capacitance vs. Fig.12 Switching Characteristics
Source-Drain Voltage (ΙΙ) Drain-Source Voltage (See Figure. 13 and 14 for
measurement circuits)

zMeasurement circuit
Pulse Width

90%
VGS 50% 50%
ID VGS
VDS 10%
D.U.T. RL
RG VDS 10% 10%
VDD
90%
90%
td(on) tr tf
td(off)
ton toff

Fig.13 Switching Time Test Circuit Fig.14 Switching Time Waveforms

Rev.A 3/3
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix1-Rev2.0
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