MJB41C,

NJVMJB41CT4G (NPN),
MJB42C,
NJVMJB42CT4G (PNP)
Complementary Silicon
Plastic Power Transistors http://onsemi.com

D2PAK for Surface Mount COMPLEMENTARY SILICON

Features POWER TRANSISTORS
 Lead Formed for Surface Mount Applications in Plastic Sleeves 6 AMPERES,
(No Suffix) 100 VOLTS, 65 WATTS
 Electrically the Same as TIP41 and T1P42 Series
 NJV Prefix for Automotive and Other Applications Requiring MARKING
DIAGRAM
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
 Pb−Free Packages are Available D2PAK
CASE 418B J4xCG
STYLE 1 AYWW
MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating Symbol Value Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage VCEO 100 Vdc J4xC = Specific Device Code
x = 1 or 2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage VCB 100 Vdc
A = Assembly Location

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage VEB 5.0 Vdc Y = Year
WW = Work Week

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous IC 6.0 Adc
− Peak 10 G = Pb−Free Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation
IB
PD
2.0 Adc
ORDERING INFORMATION

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
@ TC = 25_C 65 W Device Package Shipping†
Derate above 25_C 0.52 W/_C

ÎÎÎ
MJB41C D2PAK 50 Units / Rail
Total Power Dissipation PD

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJB41CG D2PAK 50 Units / Rail
@ TA = 25_C 2.0 W (Pb−Free)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 0.016 W/_C
MJB41CT4 D2PAK 800 / Tape &

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Unclamped Inductive Load Energy (Note 1) E 62.5 mJ
Reel

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction TJ, Tstg −65 to +150 _C
Temperature Range MJB41CT4G D2PAK 800 / Tape &

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Pb−Free) Reel
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
NJVMJB41CT4G D2PAK 800 / Tape &
Characteristic Symbol Max Unit (Pb−Free) Reel

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case RqJC 1.92 _C/W MJB42C D2PAK 50 Units / Rail

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, RqJA 62.5 _C/W MJB42CG D2PAK 50 Units / Rail

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Junction−to−Ambient (Pb−Free)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, RqJA 50 _C/W MJB42CT4 D2PAK 800 / Tape &
Junction−to−Ambient (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Reel
Maximum Lead Temperature for Soldering TL 260 _C MJB42CT4G D2PAK 800 / Tape &

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Purposes, 1/8 from Case for 10 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
NJVMJB42CT4G
(Pb−Free)
D2PAK
(Pb−Free)
Reel
800 / Tape &
Reel
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications,
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W including part orientation and tape sizes, please
2. When surface mounted to an FR−4 board using the minimum recommended refer to our Tape and Reel Packaging Specifications
pad size. Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

February, 2012 − Rev. 3 MJB41C/D
 MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) VCEO(sus) 100 − Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO − 0.7 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = 100 Vdc, VEB = 0) ICES − 100 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 50 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) hFE 30 − −
(IC = 3.0 Adc, VCE = 4.0 Vdc) 15 75

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) − 1.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
fT
hfe
3.0
20
−
−
MHz
−
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

TA TC
4.0 80
PD, POWER DISSIPATION (WATTS)

3.0 60

TC
2.0 40

TA
1.0 20

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (C)
Figure 1. Power Derating

VCC
2.0
+30 V

1.0 TJ = 25C
25 ms RC VCC = 30 V
0.7
+11 V SCOPE IC/IB = 10
0.5
RB
t, TIME (s)

0 0.3


tr
-9.0 V 0.2
D1
tr, tf  10 ns 0.1
DUTY CYCLE = 1.0% -4 V 0.07 td @ VBE(off)  5.0 V
0.05
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.03
D1 MUST BE FAST RECOVERY TYPE, e.g.: 0.02
1N5825 USED ABOVE IB  100 mA 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0
MSD6100 USED BELOW IB  100 mA IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time

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 MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0

0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05
RqJC = 1.92C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10
There are two limitations on the power handling ability of
5.0
0.5ms a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC − VCE

1.0ms
3.0 limits of the transistor that must be observed for reliable
2.0 operation; i.e., the transistor must not be subjected to greater
SECONDARY BREAKDOWN LTD 5.0ms dissipation than the curves indicate.
1.0 BONDING WIRE LTD The data of Figure 5 is based on TJ(pk) = 150_C; TC is
THERMAL LIMITATION @ TC = 25C
0.5 variable depending on conditions. Second breakdown pulse
(SINGLE PULSE)
limits are valid for duty cycles to 10% provided TJ(pk)
CURVES APPLY BELOW RATED VCEO
0.3 v 150_C. TJ(pk) may be calculated from the data in
0.2 Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
0.1
5.0 10 20 40 60 80 100 limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active−Region Safe Operating Area

5.0 300

3.0 TJ = 25C TJ = 25C

2.0 VCC = 30 V 200
IC/IB = 10
C, CAPACITANCE (pF)

ts
1.0 IB1 = IB2
Cib
t, TIME (s)

0.7


0.5 100

0.3 70
0.2 tf Cob

50
0.1
0.07
0.05 30
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn−Off Time Figure 7. Capacitance

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 MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)

500 2.0

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

300 VCE = 2.0 V TJ = 25C
200 TJ = 150C 1.6
hFE, DC CURRENT GAIN

100
25C 1.2 IC = 1.0 A 2.5 A 5.0 A
70
50

30 0.8
20 -55C

0.4
10
7.0
5.0 0
0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 4.0 6.0 10 20 30 50 100 200 300 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

2.0 +2.5

V, TEMPERATURE COEFFICIENTS (mV/C)

TJ = 25C +2.0 *APPLIES FOR IC/IB  hFE/4
1.6 +1.5
V, VOLTAGE (VOLTS)

+1.0
1.2 +0.5 +25C to +150C
*qVC FOR VCE(sat)
0
VBE(sat) @ IC/IB = 10 -55C to +25C
0.8 -0.5
+25C to +150C
VBE @ VCE = 4.0 V -1.0
0.4 -1.5 qVB FOR VBE
VCE(sat) @ IC/IB = 10 -2.0 -55C to +25C
0 -2.5
0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

103 10M
VCE = 30 V VCE = 30 V
102
IC, COLLECTOR CURRENT (A)

1.0M IC = 10 x ICES


TJ = 150C
101 100C IC  ICES
25C 100k
100

10k
10-1 IC = ICES IC = 2 x ICES

10-2 REVERSE FORWARD 1.0k (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
10-3 0.1k
-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 20 40 60 80 100 120 140 160
VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance

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 MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)

PACKAGE DIMENSIONS

D2PAK 3
CASE 418B−04
ISSUE K NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
V
−B− NEW STANDARD 418B−04.
W
4 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
A C 0.160 0.190 4.06 4.83
S D 0.020 0.035 0.51 0.89
1 2 3 E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
G 0.100 BSC 2.54 BSC
−T− H 0.080 0.110 2.03 2.79
K J 0.018 0.025 0.46 0.64
SEATING W K 0.090 0.110 2.29 2.79
PLANE
G J L 0.052 0.072 1.32 1.83
M 0.280 0.320 7.11 8.13
H N 0.197 REF 5.00 REF
D 3 PL P 0.079 REF 2.00 REF
R 0.039 REF 0.99 REF
0.13 (0.005) M T B M
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40

STYLE 1:
PIN 1. BASE
2. COLLECTOR
VARIABLE 3. EMITTER
CONFIGURATION 4. COLLECTOR
ZONE N P
R U
L L L

M M M

F F F

VIEW W−W VIEW W−W VIEW W−W

1 2 3

SOLDERING FOOTPRINT*

10.49

8.38

16.155

2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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6