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stpsc30g12 y

This document provides information on an automotive 1200V, 30A silicon carbide power Schottky diode: 1) It has features like AEC-Q101 qualification, negligible reverse recovery, temperature-independent switching behavior, and high surge current capability, making it suitable for applications like boost PFC and EV/HEV onboard chargers. 2) As a SiC diode, it provides low forward voltage, high temperature operation from -55°C to 175°C, and robust performance in hard switching conditions. 3) Key electrical characteristics include a 1200V rating, 30A average forward current, 1.35V typical forward voltage, and 149nC total capacitive charge.

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0% found this document useful (0 votes)
35 views10 pages

stpsc30g12 y

This document provides information on an automotive 1200V, 30A silicon carbide power Schottky diode: 1) It has features like AEC-Q101 qualification, negligible reverse recovery, temperature-independent switching behavior, and high surge current capability, making it suitable for applications like boost PFC and EV/HEV onboard chargers. 2) As a SiC diode, it provides low forward voltage, high temperature operation from -55°C to 175°C, and robust performance in hard switching conditions. 3) Key electrical characteristics include a 1200V rating, 30A average forward current, 1.35V typical forward voltage, and 149nC total capacitive charge.

Uploaded by

alhammadiree124
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 10

STPSC30G12-Y

Datasheet

Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode

Features
A K

K
• AEC-Q101 qualified and PPAP capable
• None or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
A • Operating Tj from -55 °C to 175 °C
K
• Avalanche energy rated
DO-247 LL • ECOPACK2 compliant component

Applications
• Boost PFC
• HEV/EV OBC (On board battery chargers)
• EV Charging station

Description
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance
power Schottky rectifier. It is manufactured using a silicon carbide substrate. The
wide band-gap material allows the design of a low VF Schottky diode structure with
a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during
turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is
independent of temperature.
Product label Based on latest technology optimization, this diode has an improved forward
surge current capability, making it ideal for use in PFC, where this ST SiC diode
boosts the performance in hard switching conditions while bringing robustness to the
design. Its high forward surge capability ensures a good robustness during transient
phases.

Product status link

STPSC30G12-Y

Product summary

IF(AV) 30 A

VRRM 1200 V

Tj (max.) 175 °C

VF (typ.) 1.35 V

DS14118 - Rev 1 - November 2022 www.st.com


For further information contact your local STMicroelectronics sales office.
STPSC30G12-Y
Characteristics

1 Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) 1200 V

EAS(1) Single pulse avalanche energy, starting Tj = 25 °C, IAS = 7.7 A, L = 10 mH 296 mJ

IF(RMS) Forward rms current 79 A

IF(AV) Average forward current Tc = 145 °C, δ = 1 30 A

IFRM Repetitive peak forward current Tc = 145 °C, Tj = 175 °C, δ = 0.1, fsw > 10 kHz 119 A

Tc = 25 °C 250
tp = 10 ms sinusoidal
IFSM Surge non repetitive forward current Tc = 150 °C 225 A

tp = 10 µs square Tc = 25 °C 1550

Tstg Storage temperature range -65 to +175 °C

Tj Operating junction temperature range -55 to +175 °C

1. Please refer to Figure 1.

Table 2. Thermal resistance parameters

Value
Symbol Parameter Unit
Typ. Max.

Rth(j-c) Junction to case 0.30 0.45 °C/W

For more information, please refer to the following application note:


• AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Tj = 25 °C - 15 225

IR (1) Reverse leakage current Tj = 150 °C VR = VRRM - 50 750 µA

Tj = 175 °C 112

Tj = 25 °C - 1.35 1.50

VF (2) Forward voltage drop Tj = 150 °C IF = 30 A - 1.75 2.10 V

Tj = 175 °C 1.90

1. Pulse test: tp = 10 ms, δ < 2%


2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:


P = 0.924 x IF(AV) + 0.039 x IF 2(RMS)
For more information, please refer to the following application notes related to the power losses:
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode

DS14118 - Rev 1 page 2/10


STPSC30G12-Y
Characteristics

Table 4. Dynamic electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

QCj (1) VR = 800 V


Total capacitive charge - 149 - nC

VR = 0 V, Tc = 25 °C, F = 1 MHz - 2272 -


Cj Total capacitance pF
VR = 800 V, Tc = 25 °C, F = 1 MHz - 108 -

1. VR
Most accurate value for the capacitive charge: Qcj VR = ∫ C j V dV
0

Figure 1. Current and voltage waveforms for avalanche energy test across D.U.T (device under test)

i(t), v(t)
VCL_DUT

IAS

IL IDUT

t
tp

Figure 2. Thermal transient impedance model circuit of the diode – Zth(j-c)

Table 5. Components typical values of the diode thermal transient impedance model Zth(j-c)

Ref. Value (K/W) Ref. Value (J/K)

Rth1 19.6m Cth1 4.88m

Rth2 75.7m Cth2 3.23m

Rth3 102m Cth3 22.2m

Rth4 79.1m Cth4 109m

Rth5 24.4m Cth5 1.43

DS14118 - Rev 1 page 3/10


STPSC30G12-Y
Characteristics (curves)

1.1 Characteristics (curves)

Figure 3. Forward voltage drop versus forward current Figure 4. Reverse leakage current versus reverse voltage
(typical values) applied (typical values)
IF(A)
IR(µA)
60 1.E+3
Pulse test : tp=380 µs

50
1.E+2
Ta=-55 °C Tj=175 °C

40 Ta=25 °C Tj=150 °C

Ta=100 °C 1.E+1
Tj=100 °C

30 Ta=150 °C Tj=25 °C

Ta=175 °C 1.E+0
20

1.E-1
10

VF(V) VR(V)
0 1.E-2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 200 300 400 500 600 700 800 900 1000 1100 1200

Figure 6. Junction capacitance versus reverse voltage


Figure 5. Peak forward current versus case temperature
applied (typical values)
IM(A)
300 Cj (pF)
2500
F=1 MHz
δ=0.1 VOSC =30 mVRMS
250
Tj=25 °C
2000

200

1500
δ=0.3
150

δ=0.5
1000
100

50 δ=1 δ=0.7
500

TC(°C)
0 VR(V)
0 25 50 75 100 125 150 175 0
0.1 1.0 10.0 100.0 1000.0 10000.0

Figure 7. Relative variation of thermal impedance junction Figure 8. Non-repetitive peak surge forward current
to case versus pulse duration versus pulse duration (sinusoidal waveform)
Zth(j-c)/Rth(j-c) IFSM (A)
1.0 1.E+4

0.9

0.8

0.7

0.6

0.5 1.E+3 Ta=25 °C

0.4
Ta=150 °C
0.3

0.2

0.1 Single pulse


tp(s) tp(s)
1.E+2
0.0
1.E-5 1.E-4 1.E-3 1.E-2
1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0

DS14118 - Rev 1 page 4/10


STPSC30G12-Y
Characteristics (curves)

Figure 9. Total capacitive charges versus reverse voltage applied (typical values)

QCj(nC)
160

120

80

40

VR(V)
0
0 100 200 300 400 500 600 700 800

DS14118 - Rev 1 page 5/10


STPSC30G12-Y
Package information

2 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

2.1 DO-247 LL package information


• Epoxy meets UL94, V0
• Cooling method: by conduction (C)
• Recommended torque value: 0.8 N·m
• Maximum torque value: 1.0 N·m

Figure 10. DO-247 LL package outline

DS14118 - Rev 1 page 6/10


STPSC30G12-Y
DO-247 LL package information

Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are
guaranteed.

Table 6. DO-247 LL package mechanical data

Dimensions

Ref. Millimeters Inches (for reference only)

Min. Typ. Max. Min. Typ. Max.

A 4.90 5.00 5.10 0.192 0.197 0.201


A1 2.31 2.41 2.51 0.090 0.095 0.099
A2 1.90 2.00 2.10 0.074 0.079 0.083
a 0.00 0.15 0.000 0.006
a' 0.00 0.15 0.000 0.006
b 1.16 1.29 0.045 0.051
b2 1.96 2.06 0.077 0.082
b6 2.25 0.089
c 0.59 0.66 0.023 0.026
D 20.90 21.00 21.10 0.822 0.827 0.831
D1 16.25 16.55 16.85 0.639 0.652 0.664
D2 1.05 1.20 1.35 0.041 0.047 0.054
E 15.70 15.80 15.90 0.618 0.622 0.626
E1 13.06 13.26 13.46 0.514 0.522 0.530
E2 4.90 5.00 5.10 0.192 0.197 0.201
E3 2.40 2.50 2.60 0.094 0.098 0.103
e 10.78 10.88 10.98 0.424 0.428 0.433
L 19.80 19.92 20.10 0.779 0.784 0.792
L1 3.93 4.46 0.154 0.176
M 0.35 0.95 0.013 0.038
P 3.50 3.60 3.70 0.137 0.142 0.146
P1 7.00 7.40 0.275 0.292
P2 2.40 2.50 2.60 0.094 0.098 0.103
Q 5.60 6.00 0.220 0.237
S 6.05 6.15 6.25 0.238 0.242 0.247
T 9.80 10.20 0.385 0.402
U 6.00 6.40 0.236 0.252

DS14118 - Rev 1 page 7/10


STPSC30G12-Y
Ordering information

3 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty. Delivery mode

STPSC30G12WLY STPSC30G12WLY DO-247LL 5.9 g 30 Tube

DS14118 - Rev 1 page 8/10


STPSC30G12-Y

Revision history
Table 8. Document revision history

Date Revision Changes

09-Nov-2022 1 Initial release.

DS14118 - Rev 1 page 9/10


STPSC30G12-Y

IMPORTANT NOTICE – READ CAREFULLY


STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
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products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names
are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2022 STMicroelectronics – All rights reserved

DS14118 - Rev 1 page 10/10

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