stpsc30g12 y
stpsc30g12 y
Datasheet
Features
A K
K
• AEC-Q101 qualified and PPAP capable
• None or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
A • Operating Tj from -55 °C to 175 °C
K
• Avalanche energy rated
DO-247 LL • ECOPACK2 compliant component
Applications
• Boost PFC
• HEV/EV OBC (On board battery chargers)
• EV Charging station
Description
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance
power Schottky rectifier. It is manufactured using a silicon carbide substrate. The
wide band-gap material allows the design of a low VF Schottky diode structure with
a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during
turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is
independent of temperature.
Product label Based on latest technology optimization, this diode has an improved forward
surge current capability, making it ideal for use in PFC, where this ST SiC diode
boosts the performance in hard switching conditions while bringing robustness to the
design. Its high forward surge capability ensures a good robustness during transient
phases.
STPSC30G12-Y
Product summary
IF(AV) 30 A
VRRM 1200 V
Tj (max.) 175 °C
VF (typ.) 1.35 V
1 Characteristics
VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) 1200 V
EAS(1) Single pulse avalanche energy, starting Tj = 25 °C, IAS = 7.7 A, L = 10 mH 296 mJ
IFRM Repetitive peak forward current Tc = 145 °C, Tj = 175 °C, δ = 0.1, fsw > 10 kHz 119 A
Tc = 25 °C 250
tp = 10 ms sinusoidal
IFSM Surge non repetitive forward current Tc = 150 °C 225 A
tp = 10 µs square Tc = 25 °C 1550
Value
Symbol Parameter Unit
Typ. Max.
Tj = 25 °C - 15 225
Tj = 175 °C 112
Tj = 25 °C - 1.35 1.50
Tj = 175 °C 1.90
1. VR
Most accurate value for the capacitive charge: Qcj VR = ∫ C j V dV
0
Figure 1. Current and voltage waveforms for avalanche energy test across D.U.T (device under test)
i(t), v(t)
VCL_DUT
IAS
IL IDUT
t
tp
Table 5. Components typical values of the diode thermal transient impedance model Zth(j-c)
Figure 3. Forward voltage drop versus forward current Figure 4. Reverse leakage current versus reverse voltage
(typical values) applied (typical values)
IF(A)
IR(µA)
60 1.E+3
Pulse test : tp=380 µs
50
1.E+2
Ta=-55 °C Tj=175 °C
40 Ta=25 °C Tj=150 °C
Ta=100 °C 1.E+1
Tj=100 °C
30 Ta=150 °C Tj=25 °C
Ta=175 °C 1.E+0
20
1.E-1
10
VF(V) VR(V)
0 1.E-2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 200 300 400 500 600 700 800 900 1000 1100 1200
200
1500
δ=0.3
150
δ=0.5
1000
100
50 δ=1 δ=0.7
500
TC(°C)
0 VR(V)
0 25 50 75 100 125 150 175 0
0.1 1.0 10.0 100.0 1000.0 10000.0
Figure 7. Relative variation of thermal impedance junction Figure 8. Non-repetitive peak surge forward current
to case versus pulse duration versus pulse duration (sinusoidal waveform)
Zth(j-c)/Rth(j-c) IFSM (A)
1.0 1.E+4
0.9
0.8
0.7
0.6
0.4
Ta=150 °C
0.3
0.2
Figure 9. Total capacitive charges versus reverse voltage applied (typical values)
QCj(nC)
160
120
80
40
VR(V)
0
0 100 200 300 400 500 600 700 800
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are
guaranteed.
Dimensions
3 Ordering information
Revision history
Table 8. Document revision history