0% found this document useful (0 votes)
119 views2 pages

Semiconductor Electronics - DPP 01 - Parishram 2024

The document discusses semiconductor electronics. It contains 10 multiple choice questions about topics like band structure, energy gaps, conductivity, and p-n junctions in semiconductors. Key points covered include: 1) Decreasing the lattice constant of a semiconductor decreases the energy of the conduction band (EC) and increases the energy gap (Eg). 2) The distinction between conductors, insulators, and semiconductors is largely due to their relative energy gap widths. 3) Doping an intrinsic semiconductor with an impurity decreases its resistance by increasing the number of charge carriers. 4) A semiconductor's conductivity increases with rising temperature primarily due to an increasing number of free charge carriers.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
119 views2 pages

Semiconductor Electronics - DPP 01 - Parishram 2024

The document discusses semiconductor electronics. It contains 10 multiple choice questions about topics like band structure, energy gaps, conductivity, and p-n junctions in semiconductors. Key points covered include: 1) Decreasing the lattice constant of a semiconductor decreases the energy of the conduction band (EC) and increases the energy gap (Eg). 2) The distinction between conductors, insulators, and semiconductors is largely due to their relative energy gap widths. 3) Doping an intrinsic semiconductor with an impurity decreases its resistance by increasing the number of charge carriers. 4) A semiconductor's conductivity increases with rising temperature primarily due to an increasing number of free charge carriers.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

1

Parishram (2024)
Semiconductor Electronics DPP-01

1. Band structure of a particular semiconductor is 6. In a semiconductor:


shown in figure. If lattice constant of this (1) there are no free electrons at 0 K
semiconductor is decreased, then choose the (2) there are no free electrons at any temperature
correct option from the following: (3) the number of free electrons increases with
pressure
(4) the number of free electrons is more than that
in a conductor

7. The resistivity of a semiconductor at room


temperature is in between
(1) EC decreases (2) Eg increases (1) 10−2 to 10−5  cm (2) 10−3 to 106  cm
(3) EV decreases (4) All of these (3) 106 to 108  cm (4) 1010 to 1012 cm

2. The distinction between conductors/ insulators and 8. When an impurity is doped into an intrinsic
semiconductors is largely connected with:
semiconductor, the resistance of the
(1) the type of crystal lattice
semiconductor:
(2) binding energy of their electrons
(1) increases
(3) relative width of their energy gap
(4) None of the above (2) decreases
(3) remains unchanged
3. The energy gaps in energy band diagrams of a (4) becomes zero
conductor, semiconductor and insulator are E1, E2
and E3. Arrange them in increasing order. 9. How does the conductivity of a semiconductor
(1) E1 < E2 < E3 (2) E2 < E1 < E3 change with the rise in its temperature?
(3) E1 > E2 > E3 (4) E3 < E2 < E1 (1) Decreases (2) Increases
(3) Remains same (4) None of these
4. A semiconductor has equal electron and hole
concentration of 6 104 m−3 . On doping with a 10. In figure given below Vo is the potential barrier
certain impurity, electron concentration increases across a p-n junction, when no battery is connected
to 8 1012 m−3 . Identify the type of semiconductor. across the junction:
(1) n-type (3) Both (1) and (2)
(2) p-type (4) None of these

5. The conductivity of a semiconductor increases with


increase in temperature, because :
(1) 1 and 3 both correspond to forward bias of
(1) number density of free current carries
junction
increases
(2) relaxation time increases (2) 3 corresponds to forward bias of junction and
(3) both number density of carries and relaxation 1 corresponds to reverse bias of junction
time increase (3) 1 corresponds to forward bias and 3
(4) number density of carries increases, relaxation corresponds to reverse bias of junction
time decreases but effect of decrease in (4) 3 and 1 both correspond to reverse bias of
relaxation time is much less than increase in junction
number density
2

Note: Kindly find the Video Solution of DPPs Questions in the DPPs Section.
Answer Key
1. (4) 6. (1)
2. (3) 7. (2)
3. (1) 8. (2)
4. (1) 9. (2)
5. (4) 10. (2)

PW Web/App - https://smart.link/7wwosivoicgd4

Library- https://smart.link/sdfez8ejd80if

You might also like