DISCRETE SEMICONDUCTORS

DATA SHEET
book, halfpage

M3D186

BC635; BC637; BC639

NPN medium power transistors
Product specification 2001 Oct 10
Supersedes data of 1999 Apr 23
Philips Semiconductors Product specification

NPN medium power transistors BC635; BC637; BC639

FEATURES PINNING
• High current (max. 1 A) PIN DESCRIPTION
• Low voltage (max. 80 V). 1 base
2 collector
APPLICATIONS 3 emitter
• Driver stages of audio/video amplifiers.

DESCRIPTION
handbook, halfpage1 2
2
NPN transistor in a TO-92; SOT54 plastic package. 3
PNP complements: BC636, BC638 and BC640. 1

3
MAM259

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC635 − 45 V
BC637 − 60 V
BC639 − 100 V
VCEO collector-emitter voltage open base
BC635 − 45 V
BC637 − 60 V
BC639 − 80 V
VEBO emitter-base voltage open collector − 5 V
IC collector current (DC) − 1 A
ICM peak collector current − 1.5 A
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C − 0.83 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C

2001 Oct 10 2
Philips Semiconductors Product specification

NPN medium power transistors BC635; BC637; BC639

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 150 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 30 V − 100 nA
IE = 0; VCB = 30 V; Tj = 150 °C − 10 µA
IEBO emitter cut-off current IC = 0; VEB = 5 V − 100 nA
hFE DC current gain VCE = 2 V; see Fig.2
IC = 5 mA 63 −
IC = 150 mA 63 250
IC = 500 mA 40 −
DC current gain IC = 150 mA; VCE = 2 V; see Fig.2
BC639-10 63 160
BC635-16; BC637-16; BC639-16 100 250
VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA − 500 mV
VBE base-emitter voltage IC = 500 mA; VCE = 2 V − 1 V
fT transition frequency IC = 50 mA; VCE = 5 V; f = 100 MHz 100 − MHz
h FE1 DC current gain ratio of the IC = 150 mA; VCE = 2 V − 1.6
----------- complementary pairs
h FE2

2001 Oct 10 3
Philips Semiconductors Product specification

NPN medium power transistors BC635; BC637; BC639

MBH729
160
handbook, full pagewidth

VCE = 2 V
hFE

120

80

40

0
10−1 1 10 102 IC (mA) 103

Fig.2 DC current gain; typical values.

2001 Oct 10 4
Philips Semiconductors Product specification

NPN medium power transistors BC635; BC637; BC639

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

d A L

1
e1
2
D e

b1
L1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A b b1 c D d E e e1 L L1(1)

5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5

mm 2.54 1.27 2.5
5.0 0.40 0.56 0.40 4.4 1.4 3.6 12.7

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT54 TO-92 SC-43 97-02-28

2001 Oct 10 5
Philips Semiconductors Product specification

NPN medium power transistors BC635; BC637; BC639

DATA SHEET STATUS

PRODUCT
DATA SHEET STATUS(1) DEFINITIONS
STATUS(2)
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS DISCLAIMERS
Short-form specification  The data in a short-form Life support applications  These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition  Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes, without notice, in the
Characteristics sections of the specification is not implied. products, including circuits, standard cells, and/or
Exposure to limiting values for extended periods may software, described or contained herein in order to
affect device reliability. improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
Application information  Applications that are
the use of any of these products, conveys no licence or title
described herein for any of these products are for
under any patent, copyright, or mask work right to these
illustrative purposes only. Philips Semiconductors make
products, and makes no representations or warranties that
no representation or warranty that such applications will be
these products are free from patent, copyright, or mask
suitable for the specified use without further testing or
work right infringement, unless otherwise specified.
modification.

2001 Oct 10 6
Philips Semiconductors Product specification

NPN medium power transistors BC635; BC637; BC639

NOTES

2001 Oct 10 7
Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2001 SCA73

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 10 Document order number: 9397 750 08738
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