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KTC 3198

1) The document provides specifications for the KTC3198 NPN plastic encapsulated transistor, which has a continuous collector current rating of 0.15A and a collector to base breakdown voltage of 60V. 2) The transistor comes in three product ranks with different hFE ranges: KTC3198-O (70-140), KTC3198-Y (120-240), and KTC3198-GR (200-400). 3) Key electrical characteristics including current gain, saturation voltages, and transition frequency are provided.

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39 views2 pages

KTC 3198

1) The document provides specifications for the KTC3198 NPN plastic encapsulated transistor, which has a continuous collector current rating of 0.15A and a collector to base breakdown voltage of 60V. 2) The transistor comes in three product ranks with different hFE ranges: KTC3198-O (70-140), KTC3198-Y (120-240), and KTC3198-GR (200-400). 3) Key electrical characteristics including current gain, saturation voltages, and transition frequency are provided.

Uploaded by

Tom Sound
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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KTC3198

0.15A , 60V
Elektronische Bauelemente NPN Plastic Encapsulated Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen & lead-free

FEATURE TO-92
 V(BR)CBO=60V

CLASSIFICATION OF hFE (1)


Product-Rank KTC3198-O KTC3198-Y KTC3198-GR

Range 70~140 120~240 200~400

1Emitter
2Base
Collector
3 3Collector

2 REF. Millimeter
Min. Max.
REF. Millimeter
Min. Max.
Base A 4.40 4.70 F 0.30 0.51

1
B 4.30 4.70 G 1.27 TYP.
C 12.70 - H 1.10 1.40
D 3.30 3.81 J 2.42 2.66
Emitter E 0.36 0.56 K 0.36 0.76

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)


Parameter Symbol Ratings Unit
Collector Current ICM 150 mA
Power Dissipation PCM 625 mW
Junction, Storage Temperature TJ, TSTG 125, -55~125 °C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)


Parameter Symbol Min. Typ. Max. Unit Test condition
Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=5mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0
Collector Cut-Off Current ICBO - - 0.1 µA VCB=60V, IE=0
Emitter Cut-Off Current IEBO - - 0.1 µA VEB=5V, IC=0
70 400 VCE=6V, IC=2mA
DC Current Gain hFE
25 100 VCE=6V, IC=150mA
Collector to Emitter Saturation Voltage VCE(sat) - 0.1 0.25 V IC=100mA, IB=10mA
Base to Emitter Saturation Voltage VBE(sat) - - 1 V IC=100mA, IB=10mA
Transition Frequency fT 80 - - MHz VCE=10V, IC=1mA, f=30MHz

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

10-Nov-2011 Rev.B Page 1 of 2


KTC3198
0.15A , 60V
Elektronische Bauelemente NPN Plastic Encapsulated Transistor

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

10-Nov-2011 Rev.B Page 2 of 2

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