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20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

Silicon PNP Power Transistor 2SA1072

DESCRIPTION
• High Collector-Emitter Breakdown vbltage-
V(BR)CEo=-120V(Min)
• Fast Switching Speed
• Wide Area of Safe Operation
• Complement to Type 2SC2522

3
I PIN 1. BASE
APPLICATIONS
^ 2. EMITTER
• High frequency power amplifier
TV 3. COLLECT OR (CASE)
• Audio power amplifiers | TO-3 package
• Switching regulators
• DC-DC converters
r A -- ,,.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

1 .1 _, C
1 : ij
SYMBOL PARAMETER VALUE UNIT

V-.
i*rJr^ PL

VCBO Collector-Base Voltage -120 V /dT:^ / 1

t
k-3-—-4 5 ^
] B

VCEO Collector-Emitter Voltage -120 V f ">\ ^/ 1

-nn
nun
VEBO Emitter-Base Voltage -7 V
DIM MIN MAX
A 3300
B 25,30 J6.6?
Ic Collector Current-Continuous -12 A C ?80 8.50
D 0,90 1 tO
E 1,40 1.60
Collector Power Dissipation § 1092
PC 120 W
@ TC=25'C H 546
K 1123 13,50
L 1675 1705
Tj Junction Temperature 150 r N 19.40 1962
Q 4.00 420
U 3000 30 20
Tstg Storage Temperature Range -65-150 'C V 430 450

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press, I hmever. N.I Somi-Comhictors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placine orders.

Quality Semi-Conductors
 Silicon PNP Power Transistor 2SA1072

ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V{BR)CEO Collector-Emitter Breakdown Voltage lc= -1mA; RBE= °° -120 V

V(BR)CBO Collector-Base Breakdown Voltage lc= -50u A; IE= 0 -120 V

V(BR)EBO Emitter-Base Breakdown Voltage IE- -50u A ; lc= 0 -7 V

VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A -1.8 V

VeE(on) Base-Emitter On Voltage lc= -5A; VCE= -5V -1.7 V

ICBO Collector Cutoff Current V CB =-120V; I E =0 -50 u A

ICEO Collector Cutoff Current V C E=-120V;R B E= ro -1 mA

IEBO Emitter Cutoff Current VEB= -7V; lc= 0 -50 uA

hpE-1 DC Current Gain lc= -1A; VCE= -5V 60 200

hFE-2 DC Current Gain lc= -7A; VCE= -5V 40

COB Output Capacitance l E =0;V C B=-10V;f= 1.0MHz 300 PF

fr Current-Gain — Bandwidth Product lc=-1A;VcE=-10V;f= 10MHz 60 MHz

Switching Times

tr Rise Time 0.15 U s

lc= -7.5A; lBi= -IB2= -0.75A;

tstg Storage Time R L =4n 0.5 M s

tf Fall Time 0.11 M s