PD - _____
PRELIMINARY IRFZ34N
HEXFET ® Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature VDSS = 55V
Fast Switching
Fully Avalanche Rated RDS(on) = 0.040 Ω
ID = 26A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ T C = 25°C Continuous Drain Current, V GS @ 10V 26
ID @ T C = 100°C Continuous Drain Current, V GS @ 10V 18 A
IDM Pulsed Drain Current 100
PD @T C = 25°C Power Dissipation 56 W
Linear Derating Factor 0.37 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 110 mJ
IAR Avalanche Current 16 A
EAR Repetitive Avalanche Energy 5.6 mJ
dv/dt Peak Diode Recovery dv/dt 4.6 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case –––– –––– 2.7
RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
RθJA Junction-to-Ambient –––– –––– 62
8/29/95
IRFZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, I D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, I D = 1mA
RDS(ON) Static Drain-to-Source On-Resistance ––– ––– 0.040 Ω VGS = 10V, I D = 16A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 6.5 ––– ––– S VDS = 25V, ID = 16A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, T J = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 34 ID = 16A
Qgs Gate-to-Source Charge ––– ––– 6.8 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 7.0 ––– VDD = 28V
tr Rise Time ––– 49 ––– ID = 16A
ns
td(off) Turn-Off Delay Time ––– 31 ––– RG = 18Ω
tf Fall Time ––– 40 ––– RD = 1.8Ω, See Fig. 10
Between lead,
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact
Ciss Input Capacitance ––– 700 ––– VGS = 0V
Coss Output Capacitance ––– 240 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol
––– ––– 26
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse
––– ––– 100
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, I S = 16A, V GS = 0V
trr Reverse Recovery Time ––– 57 86 ns TJ = 25°C, I F = 16A
Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ 16 A, di/dt ≤ 420A/µs, V DD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) T J ≤ 175°C
VDD = 25V, starting T J = 25°C, L = 610µH Pulse width ≤ 300µs; duty cycle ≤ 2%.
R G = 25Ω, IAS = 16A. (See Figure 12)
IRFZ34N
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , Drain-to-Source Current (A)
I , Drain-to-Source Current (A)
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100
10 10
4.5V
4.5V
D
D
20µs PULSE WIDTH 20µs PULSE WIDTH
TC = 25°C TC = 175°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,
TC = 25oC TC = 175oC
100 2.4
I D = 26A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
2.0
TJ = 25°C
TJ = 175°C 1.6
(Normalized)
10 1.2
0.8
0.4
VDS = 25V
20µs PULSE WIDTH VGS = 10V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
IRFZ34N
1200 20
V GS = 0V, f = 1MHz I D = 16A
C iss = Cgs + C gd , Cds SHORTED V DS = 44V
C rss = C gd
VGS , Gate-to-Source Voltage (V)
1000 V DS = 28V
Ciss C oss = Cds + C gd 16
C, Capacitance (pF)
800
Coss 12
600
8
400
Crss
4
200
FOR TEST CIRCUIT
0
SEE FIGURE 13
A 0 A
1 10 100 0 10 20 30 40
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
ID , Drain Current (A)
100 100
10µs
TJ = 175°C
TJ = 25°C 100µs
10 10
1ms
TC = 25°C
TJ = 175°C 10ms
VGS = 0V Single Pulse
1 A 1 A
0.4 0.8 1.2 1.6 2.0 1 10 100
VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFZ34N
RD
VDS
30
VGS
D.U.T.
RG
VDD
25
ID, Drain Current (Amps)
10 V
20 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15 Fig 10a. Switching Time Test Circuit
10
0 A
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
Thermal Response (Z thJC )
D = 0.50
1
0.20
0.10
0.05
PD M
0.02
0.1
0.01 t
1
SINGLE PULSE t2
(THERMAL RESPONSE)
N otes :
1 . D uty fac tor D = t /t
1 2
2. P ea k T J = P D M x Z thJ C + T C
0.01 A
0.00001 0.0001 0.001 0.01 0.1 1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFZ34N
250
ID
EAS , Single Pulse Avalanche Energy (mJ)
TOP 6.5A
11A
200 BOTTOM 16A
10 V
150
Fig 12a. Unclamped Inductive Test Circuit
100
50
VDD = 25V
0 A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current
10 V
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit
Appendix B: Package Outline Mechanical Drawing
Appendix C: Part Marking Information
IRFZ34N
Appendix A
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
D.U.T
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
RG • dv/dt controlled by R G
• Driver same type as D.U.T. VDD
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFZ34N
Package Outline
Appendix B
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)
0.93 (.037) 0.55 (.022)
3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information Appendix C
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY A
LOT CODE 9B1M INTERNATIONAL PART NUMBER
RECTIFIER
IRF1010
LOGO 9246
9B 1M DATE CODE
ASSEMBLY
(YYWW)
LOT CODE
YY = YEAR
WW = WEEK
