Scribd
Upload
47 views3 pages

2SD401A SavantIC

This document provides the product specification for the SavantIC Semiconductor 2SD401A silicon NPN power transistor. It is packaged in a TO-220C case and is intended for use in general purpose power amplifiers and vertical output applications. Key specifications include a collector current rating of 2A, collector-emitter voltage of 150V, and thermal resistance of 5C/W. Electrical characteristics are also listed such as breakdown voltages, saturation voltage, current gain range, and transition frequency.

Uploaded by

Abhijit Jana
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
47 views3 pages

2SD401A SavantIC

This document provides the product specification for the SavantIC Semiconductor 2SD401A silicon NPN power transistor. It is packaged in a TO-220C case and is intended for use in general purpose power amplifiers and vertical output applications. Key specifications include a collector current rating of 2A, collector-emitter voltage of 150V, and thermal resistance of 5C/W. Electrical characteristics are also listed such as breakdown voltages, saturation voltage, current gain range, and transition frequency.

Uploaded by

Abhijit Jana
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD401A

DESCRIPTION
www.datasheet4u.com
·With TO-220C package
·Complement to type 2SB546A
·Collector current IC=2A
·Collector-collector voltage:VCEO=150V(Min)

APPLICATIONS
·For use in general purpose power amplifier,
vertical output application

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base

3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 200 V

VCEO Collector-emitter voltage Open base 150 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 2 A

ICM Collector current-peak 3 A

PD Total power dissipation TC=25 25 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

THERMAL CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX UNIT

R9jc Thermal resistance junction to case 5.0 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD401A

CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 150 V

V(BR)CBO Collector-base breakdown voltage IC=0.5mA; IE=0 200 V

V(BR)EBO Emitter-base breakdown votage IE=0.5mA; IB=0 5 V

VCEsat Collector-emitter saturation voltage IC=500m A;IB=50m A 1.0 V

ICBO Collector cut-off current VCB=150V; IE=0 50 µA

IEBO Emitter cut-off current VEB=5V; IC=0 50 µA

hFE DC current gain IC=0.4A ; VCE=10V 40 200

fT Transition frequency IC=0.4A ; VCE=10V;f=1MHz 5 MHz

hFE classifications

M L K

40-80 60-120 100-200

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD401A

PACKAGE OUTLINE

www.datasheet4u.com

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

You might also like