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KSR 1010

1. The KSR1010 is an NPN epitaxial silicon transistor intended for switching applications with a built-in bias resistor of 10 ohms. 2. It has absolute maximum ratings including a collector-base voltage of 40V, collector-emitter voltage of 40V, and collector current of 100mA. 3. Key electrical characteristics are a DC current gain of 100-600, collector-emitter saturation voltage below 0.3V, and current gain-bandwidth product of 250MHz minimum.

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91 views3 pages

KSR 1010

1. The KSR1010 is an NPN epitaxial silicon transistor intended for switching applications with a built-in bias resistor of 10 ohms. 2. It has absolute maximum ratings including a collector-base voltage of 40V, collector-emitter voltage of 40V, and collector current of 100mA. 3. Key electrical characteristics are a DC current gain of 100-600, collector-emitter saturation voltage below 0.3V, and current gain-bandwidth product of 250MHz minimum.

Uploaded by

Zak zs
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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KSR1010 NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)


• Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92
• Built in bias Resistor (R=10 )Ï
• Complement to KSR2010

ABSOLUTE MAXIMUM RATINGS (TA=25 Î)


Characteristic Symbol Rating Unit

Collector-Base Voltage VCBO 40 V


Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Collector Dissipation PC 300 mW
Junction Temperature TJ 150 Î
Storage Temperature T STG -55 ~ 150 Î

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (TA=25 Î)


Characteristic Symbol Test Conditions Min Typ Max Unit

Collector-Base Breakdown Voltage BVCBO À


IC=100 , IE=0 40 V
Collector-Emitter Breakdown Voltage BVCEO IE=1mA, IB=0 40 V
Collector Cut-off Current ICBO VCB=30V, IE=0 0.1 À
DC Current Gain hFE VCE=5V, IC=1mA 100 600
Collector-Emitter Saturation Voltage VCE (sat) IC=10mA, IB=1mA 0.3 V
Output Capacitance COB VCB=10V, IE=0 3.7 pF
f=1MHz
MHz
Ï
Current Gain-Bandwidth Product fT VCE=10V, IC=5mA 250
Input Resistor R 7 10 13

Equivalent Circuit

Collector

Base

Emitter
KSR1010 NPN EPITAXIAL SILICON TRANSISTOR
KSR1010 NPN EPITAXIAL SILICON TRANSISTOR

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