https://www.youtube.

com/c/EngineeringPhysicsbySanjiv SEMICONDUCTOR PHYSICS

https://youtu.be/Z-mdnY2ObRg

CHAPTER – 3 SEMICONDUCTOR PHYSICS

Session 5 : (p-n junction diode)

P-N junction:

On joining n-type semiconductor with p-type semiconductor, diffusion of carriers takes place due
to large concentration gradients at the junction. Holes diffuse from p-side to n-side and electrons
diffuse from n-side to p-side. Electrons diffusing from n-side to p-side leave behind donor ions
(Nd+) and holes diffusing from p-side to n-side leave behind acceptor ions (Na-). Thus, positive
space charge is developed on n-side near the junction and negative space charge is developed on
p-side near the junction. The region near the junction, where positive donor ions are created on n-
side and negative acceptor ions are created on p-side is called as depletion region. Equilibrium
potential difference across this depletion region is called as contact potential (V0) or barrier
potential.
W
- - + +
- - + +
p - - + +
n
- - + +

E
Forward Biasing a p-n junction :

When an external voltage is applied to the p-n junction with the positive terminal connected to the
p-region and negative terminal connected to the n-region, the p-n junction is said to be forward
biased.
Reduced Depletion
layer

- +
- +
- +
- +
p side n side

Forward Bias
In forward bias condition, negative terminal of the battery repels the free electrons on the n-side
towards the junction. These free electrons recombine with the positive ions present in the
depletion layer. Similarly, the positive terminal of the battery repels the holes on p-side towards
the junction. These holes recombine with the negative ions in the depletion layer. The overall
effect of this is reduction of depletion layer width. As the external voltage increases, the depletion
layer vanishes and the free electrons from n-side, are attracted towards the positive terminal of the
battery and holes from p-side are attracted towards the n-side and the current starts flowing. Thus
in forward bias condition, the current flow is due to majority carriers

Prepared by – Sanjiv Badhe Page 1 of 8

https://www.youtube.com/c/EngineeringPhysicsbySanjiv SEMICONDUCTOR PHYSICS
https://youtu.be/Z-mdnY2ObRg

Reverse biasing a p-n junction :

If p-type semiconductor is connected to the negative terminal of the battery and n-type
semiconductor is connected to the positive terminal of the battery, then the p-n junction is said to
be reverse biased. This results in increase in barrier potential and hence in barrier height.

Increased Depletion
layer width

- - - + + +
- - - + + +
- - - + + +
- - - + + +
p side n side

Reverse Bias pn junction

The reverse bias pulls the free electrons in the n-region away from the junction towards the
positive terminal of the battery. Also, holes are pulled away from the junction towards the
negative terminal of the battery. The departing electrons leave more positive ions near the junction
and the departing holes leave more negative ions near the junctions. This results in increase in the
width of depletion layer. This wider depletion layer does not allow the majority carriers in both
regions to cross the junction. Hence, there is no current due to majority carriers.

Forward Characteristics :

When the diode is in forward-biased and the applied voltage is increased from zero, hardly any
current flows through the device in the beginning. It is so because the external voltage is being
opposed by the internal barrier voltage Vb whose value is 0.7V for Si and 0.3V for Ge. As soon as
Vb is neutralized, current through the diode increases rapidly with increasing applied supply
voltage. It is found that as a little voltage of 1.0V produces a forward current of about 50mA.

Reverse Characteristics :

When the diode is reverse-biased, majority carrier are blocked and only a small current (due to
minority carrier) flows through the diode. As the reverse voltage is increased from zero, the
reverse current very quickly reaches its maximum or saturation value Io which is also known as
leakage current. It is of the order of nano Amperes (nA) and micro Amperes (A) for Ge. As seen
from above figure, when reverse voltage exceeds a certain value called breakdown voltage VBR,
the leakage current suddenly and sharply increases, the curve indicating zero resistance at this
point.

Prepared by – Sanjiv Badhe Page 2 of 8

https://www.youtube.com/c/EngineeringPhysicsbySanjiv SEMICONDUCTOR PHYSICS
https://youtu.be/Z-mdnY2ObRg

Forward
Reverse Bias
VBR Bias

Vb V

DIFFUSION CURRENT :

In addition to the drift motion of the carriers under the influence of an electric field, the carriers in
semiconductors may move by diffusion. Diffusion occurs whenever there is a non-uniform
distribution of concentration of charge carriers at some places in the crystal.

In the absence of electric field, the carrier density in a homogeneous semiconductor is uniform at
equilibrium due to random thermal motion of electrons and repulsive forces between them. If
excess carriers are introduced locally within such semiconductor, either by heating or injecting
carriers, a non-uniform distribution is created. The excess carriers move from region of higher
concentration to the region of lower concentration in order to produce uniform distribution. This
phenomenon is called as diffusion and it takes place in addition to the drift caused by an electric
field.

P-N JUNCTION (Depletion region and Energy Band Diagram)

On joining n-type semiconductor with p-type semiconductor, diffusion of carriers takes place due
to large concentration gradients at the junction. Holes diffuse from p-side to n-side and electrons
diffuse from n-side to p-side. Electrons diffusing from n-side to p-side leave behind donor ions
(Nd+) and holes diffusing from p-side to n-side leave behind acceptor ions (Na-).
W
- - + +
- - + + Space charge /
p - - + +
n Depletion region
- - + +

E
Prepared by – Sanjiv Badhe Page 3 of 8
https://www.youtube.com/c/EngineeringPhysicsbySanjiv SEMICONDUCTOR PHYSICS
https://youtu.be/Z-mdnY2ObRg

Thus, positive space charge is developed on n-side near the junction and negative space charge is
developed on p-side near the junction. This results in internal electric field E which gives rise to a
drift current opposing the diffusion current. Thus at equilibrium,

Jp (drift) + Jp (diffusion) = 0
Jn (drift) + Jn (diffusion) = 0

The region near the junction, where positive donor ions are created on n-side and negative
acceptor ions are created on p-side is called as depletion region. Equilibrium potential difference
across this depletion region is called as contact potential (V0) or barrier potential . This contact
potential is the internal potential barrier that is necessary to maintain equilibrium at the junction.
The contact potential separates the energy bands as shown in fig (c). The valence band and
conduction band on p-side are higher than these bands on n-side by an amount eV0. This
separation of bands at equilibrium is required to make Fermi level constant throughout the device.

W
- - + +
- - + + (a) Space charge /
p - - + +
n Depletion region
- - + +

E
Vn
V0 (b) Contact potential
Vp

eV0
EC
(c) Energy Bands
EF for unbiased pn
EV
junction

p-n junction Depletion region and Energy Bands

Prepared by – Sanjiv Badhe Page 4 of 8

https://www.youtube.com/c/EngineeringPhysicsbySanjiv SEMICONDUCTOR PHYSICS
https://youtu.be/Z-mdnY2ObRg

Contact potential is given by the relation -

kT N N
 V0  ln a 2 d
e ni

Where k = Boltzmann constant = 8.625 x 10-5 eV / 0K, T = Temperature in 0K,

e = charge of electron = 1.6 x 10-19 C, Na = acceptor concentration on p-side,
Nd = donor concentration on n-side

FORWARD AND REVERSE CHARACTERISTICS OF P-N JUNCTION DIODE

(On the basis of Energy band diagram)
A diode is an electrical device allowing current to move through it in one direction with far greater
ease than in the other. Semiconductor diodes are symbolized in schematic diagrams as shown
below-

Forward Bias :

When an external voltage is applied to the p-n junction with the positive terminal connected to the
p-region and negative terminal connected to the n-region, the p-n junction is said to be forward
biased.
Reduced Depletion
layer

- +
- +
- +
- +
p side n side

Forward Bias

In forward bias condition, negative terminal of the battery repels the free electrons on the n-side
towards the junction. These free electrons recombine with the positive ions present in the
depletion layer. Similarly the positive terminal of the battery repels the holes on p-side towards the
junction. These holes recombine with the negative ions in the depletion layer. The overall effect of
this is reduction of depletion layer width. As the external voltage increases, the depletion layer
vanishes and the free electrons from n-side, are attracted towards the positive terminal of the

Prepared by – Sanjiv Badhe Page 5 of 8

https://www.youtube.com/c/EngineeringPhysicsbySanjiv SEMICONDUCTOR PHYSICS
https://youtu.be/Z-mdnY2ObRg

battery and holes from p-side are attracted towards the n-side and the current starts flowing. Thus
in forward bias condition, the current flow is due to majority carriers

Reduced barrrier
height

Conduction band Energy

bands when
Forward Bias
voltage is
less than
Barrier
Valence band voltage

Energy
bands when
Forward Bias
voltage is
equal to
Barrier
voltage

On the basis of energy bands, forward biasing can be explained as follows –

The barrier potential gives slightly more energy to the p-bands than n-bands. Hence p-bands are
higher than the n-bands. Negative terminal of the battery pushes the conduction band electrons in
the n-region towards the junction. This repulsive force causes increase in velocity of electrons and
hence increases in energy of the electrons. Hence energy bands on n-side are raised resulting in
reduction in barrier height. This causes reduction in barrier height. When forward barrier voltage
is equal to barrier voltage, the barrier height vanishes and this allows the conduction band
electrons on n-side to easily cross the junction and enter the conduction band on p-side, where the
positive terminal of the battery immediately attracts them. The holes in the valence band on p-side
fall down the barrier height and are attracted towards the negative terminal of the battery.

Reverse bias :

If p-type semiconductor is connected to the negative terminal of the battery and n-type
semiconductor is connected to the positive terminal of the battery, then the p-n junction is said to
be reverse biased. This results in increase in barrier potential and hence in barrier height.

Prepared by – Sanjiv Badhe Page 6 of 8

https://www.youtube.com/c/EngineeringPhysicsbySanjiv SEMICONDUCTOR PHYSICS
https://youtu.be/Z-mdnY2ObRg

Increased Depletion
layer width

- - - + + +
- - - + + +
- - - + + +
- - - + + +
p side n side

Reverse Bias pn junction

The reverse bias pulls the free electrons in the n-region away from the junction towards the
positive terminal of the battery. Also, holes are pulled away from the junction towards the
negative terminal of the battery. The departing electrons leave more positive ions near the junction
and the departing holes leave more negative ions near the junctions. This results in increase in the
width of depletion layer. This wider depletion layer does not allow the majority carriers in both
regions to cross the junction. Hence, there is no current due to majority carriers.

Reverse biasing can be explained in the energy band view point as follows –

Increased barrrier
height
Energy
Conduction band bands when
Reverse Bias
voltage is
applied

Valence band

By applying the positive potential to the n-region, we are lowering the energies of the band. This
causes the barrier height to increase, which does not allow the conduction band electrons to cross
the junction easily as they now have to climb the higher energy hill.

However, the thermally excited conduction band electrons in p-region can get down this energy
hill easily and are attracted by the positive terminal of the battery connected to the n-region.
However, such thermally excited electrons in p-region are very less in number. Hence the current
due to such minority carriers is very small in magnitude. This current is called as saturation
current (IS). It does not depend on reverse voltage but it increases with increasing temperature.

The static voltage-current characteristics for a P-N Junction diode are shown in the following
figure -.

Prepared by – Sanjiv Badhe Page 7 of 8

https://www.youtube.com/c/EngineeringPhysicsbySanjiv SEMICONDUCTOR PHYSICS
https://youtu.be/Z-mdnY2ObRg

Forward Characteristics :

When the diode is in forward-biased and the applied voltage is increased from zero, hardly any
current flows through the device in the beginning. It is so because the external voltage is being
opposed by the internal barrier voltage Vb whose value is 0.7V for Si and 0.3V for Ge. As soon as
Vb is neutralized, current through the diode increases rapidly with increasing applied supply
voltage. It is found that as a little voltage of 1.0V produces a forward current of about 50mA.

Reverse Characteristics :

When the diode is reverse-biased, majority carrier are blocked and only a small current (due to
minority carrier) flows through the diode. As the reverse voltage is increased from zero, the
reverse current very quickly reaches its maximum or saturation value Io which is also known as
leakage current. It is of the order of nano Amperes (nA) and micro Amperes (A) for Ge. As seen
from characteristics, when reverse voltage exceeds a certain value called breakdown voltage VBR,
the leakage current suddenly and sharply increases, the curve indicating zero resistance at this
point. This happens due to the avalanche effect. If the reverse bias voltage is very high, then the
depletion region widens, and the electric field is very strong. The minority charge carriers get
accelerated in this depletion region, and gain kinetic energy. Once the field is strong enough, they
can knock off, other electrons from the negative ions in the depletion layer. These new electrons
can knock off more electron from the negative ions in the depletion layer and the number of
electrons in the depletion layer suddenly gets multiplied. The increase in number of electrons is
exponential, just like an Avalanche. And current suddenly rises due to these electrons. The
problem is, due to this 'impact' (this process is called Impact Ionization), heat is generated, and this
heat could destroy the diode.

Prepared by – Sanjiv Badhe Page 8 of 8