AUTOMOTIVE GRADE

AUIRFZ44N
Features HEXFET® Power MOSFET
 Advanced Planar Technology VDSS
 Low On-Resistance 55V
 Dynamic dv/dt Rating
 175°C Operating Temperature RDS(on) max. 17.5m
 Fast Switching
ID 49A
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *

Description S
Specifically designed for Automotive applications, this Stripe D
G
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon TO-220AB
AUIRFZ44N
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient G D S
and reliable device for use in Automotive and a wide variety of Gate Drain Source
other applications.

Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
AUIRFZ44N TO-220 Tube 50 AUIRFZ44N
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current  160
PD @TC = 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited)  150
mJ
EAS (Tested) Single Pulse Avalanche Energy Tested Value  530
IAR Avalanche Current  25 A
EAR Repetitive Avalanche Energy  9.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.5
RCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RJA Junction-to-Ambient ––– 62

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 m VGS = 10V, ID = 25A 
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 19 ––– ––– S VDS = 25V, ID = 25A 
––– ––– 25 VDS =55 V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS =44V,VGS = 0V,TJ =150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– ––– 63 ID = 25A
Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 44V
Qgd Gate-to-Drain Charge ––– ––– 23 VGS = 10V , See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V
tr Rise Time ––– 60 ––– ID = 25A
ns
td(off) Turn-Off Delay Time ––– 44 ––– RG= 12
tf Fall Time ––– 45 ––– VGS = 10V, See Fig. 10 
Between lead,
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact
Ciss Input Capacitance ––– 1470 ––– VGS = 0V
Coss Output Capacitance ––– 360 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5
EAs Single pulse Avalanche Energy ––– 530 150 mJ IAS = 25A, L = 0.47mH
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
IS ––– ––– 49
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM ––– ––– 160
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 25A ,VGS = 0V 
trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C ,IF = 25A
Qrr Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs 
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
 Starting TJ = 25°C, L = 0.48mH, RG = 25, IAS = 25A (See fig. 12)
 ISD  25A, di/dt  230A/µs, VDD  V(BR)DSS, TJ  175°C
 Pulse width  400µs; duty cycle  2%.
 This is a typical value at device destruction and represents operation outside rated limits.
 This is a calculated value limited to TJ = 175°C .

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1000 1000
VGS
TOP 15V VGS
10V TOP 15V
8.0V 10V
8.0V
I D , Drain-to-Source Current (A)

7.0V

I D , Drain-to-Source Current (A)

6.0V 7.0V
5.5V 6.0V
5.0V 5.5V
BOTTOM 4.5V 5.0V
BOTTOM 4.5V
100 100

4.5V
10 10
4.5V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175 °C
1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics

1000 2.5
ID = 49A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.0
TJ = 25 ° C

100
TJ = 175 ° C
(Normalized)

1.5

1.0
10

0.5

V DS= 25V
20µs PULSE WIDTH V GS = 10V
1 0.0
4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature ( °C)

Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance

Vs. Temperature

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2500 20
VGS = 0V, f = 1MHz ID = 25A
Ciss = Cgs + Cgd , Cds SHORTED VDS = 44V
Crss = Cgd

VGS , Gate-to-Source Voltage (V)

VDS = 27V
2000 Coss = Cds + Cgd 16 VDS = 11V
C, Capacitance (pF)

Ciss
1500 12

1000 8

Coss
500 4

Crss
0 0
1 10 100 0 10 20 30 40 50 60 70
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100 100
TJ = 175 °C

10 100µsec
10

1msec

1 TJ = 25 °C 1
Tc = 25°C 10msec
Tj = 175°C
V GS = 0 V Single Pulse
0.1 0.1
0.0 0.6 1.2 1.8 2.4 1 10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig. 7. Typical Source-to-Drain Diode

Fig 8. Maximum Safe Operating Area
Forward Voltage

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50

40
ID , Drain Current (A)

30

20

Fig 10a. Switching Time Test Circuit

10

0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10
PDM
0.05
0.1
0.02 SINGLE PULSE t1
0.01 (THERMAL RESPONSE)
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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300

EAS , Single Pulse Avalanche Energy (mJ)

ID
15V TOP 10A
18A
240 BOTTOM 25A
L DRIVER
VDS

180
RG D.U.T +
V
- DD
IAS A
20V
tp 0.01 120

Fig 12a. Unclamped Inductive Test Circuit

60

0
25 50 75 100 125 150 175
V(BR)DSS
Starting T J, Junction Temperature ( °C)
tp

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms

Fig 13a. Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

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TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

Part Number AUIRFZ44N

Date Code
IR Logo YWWA Y= Year


WW= Work Week
XX XX

Lot Code

TO-220AB package is not recommended for Surface Mount Application.

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Qualification Information
Automotive
(per AEC-Q101)
Qualification Level Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level 3L-TO-220AB N/A
Class M3 (+/- 400V)†
Machine Model
AEC-Q101-002
Class H1C (+/- 1250V)†
ESD Human Body Model
AEC-Q101-001
Class C5 (+/- 1250V)†
Charged Device Model
AEC-Q101-005
RoHS Compliant Yes

† Highest passing voltage.

Revision History
Date Comments
 Updated datasheet with corporate template.
9/25/2017
 Corrected typo error on package outline and part marking on page 8.

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.

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Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
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