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2 SC 1674

This document provides specifications for an NPN plastic encapsulated transistor, the 2SC1674. It is a general purpose switching and amplification transistor that comes in three different hFE classifications: 40-80, 60-120, and 90-180. The document lists the transistor's key electrical characteristics including maximum ratings, breakdown voltages, current and capacitance values. It also includes a diagram of the transistor package with labeled dimensions.

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0% found this document useful (0 votes)
18 views

2 SC 1674

This document provides specifications for an NPN plastic encapsulated transistor, the 2SC1674. It is a general purpose switching and amplification transistor that comes in three different hFE classifications: 40-80, 60-120, and 90-180. The document lists the transistor's key electrical characteristics including maximum ratings, breakdown voltages, current and capacitance values. It also includes a diagram of the transistor package with labeled dimensions.

Uploaded by

javiblas1
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SC1674

0.02 A , 30 V
Elektronische Bauelemente NPN Plastic Encapsulated Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen & lead-free

FEATURES TO-92
 General Purpose Switching and Amplification G H
Emitter
Collector
Base
J
CLASSIFICATION OF hFE A D
Millimeter
REF.
Min. Max.
Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BL B A 4.40 4.70
B 4.30 4.70
Range 40~80 60~120 90~180 K C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
E C F G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76

Collector



Base


Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)


Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 30 V
Collector to Emitter Voltage VCEO 20 V
Emitter to Base Voltage VEBO 4 V
Collector Current - Continuous IC 20 mA
Collector Power Dissipation PC 250 mW
Thermal Resistance From Junction To Ambient RθJA 500 °C / W
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)


Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=0.1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 20 - - V IC=1mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=0.1mA, IC=0
Collector Cut – Off Current ICBO - - 0.1 μA VCB=30V, IE=0
Collector Cut – Off Current ICEO - - 0.1 μA VCE=20V, IB=0
Emitter Cut – Off Current IEBO - - 0.1 μA VEB=3V, IC=0
DC Current Gain hFE 40 - 180 VCE=6V, IC=1mA
Collector to Emitter Saturation Voltage VCE(sat) - - 0.3 V IC=10mA, IB=1mA
Base to Emitter voltage VBE 0.65 - 0.77 V VCE=6V, IC=1mA
Transition Frequency fT 400 - - MHz VCE=6V, IC=1mA
Collector Output Capacitance Cob - - 1.3 pF VCB=6V, IE=0, f=1MHz

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

21-Feb-2011 Rev. A Page 1 of 1

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