2023 Vlsi HW3
2023 Vlsi HW3
Due date:2023/11/30
*Set temperature = 25 degrees for TT corner during simulation.
*The following should be included in your report: (a) picture of the schematic, (b)
picture of the waveform with cursor values, (c) your comment
.
1. Run an inverter buffer (out = 𝑖𝑛 ̅ ) with output loading 75pF with VDD = 1V, as shown in
Fig 1. (The size of the first inverter has been assigned.) (the rising time and falling time of
input is 0.01ns & input frequency = 5MHz).
[Run with .18um technology and 14nm technology]
(a) Please find the unit inverter, calculate the g and p and use the parameter to calculate the
optimum 𝜌 with the simulation result and your normalization condition. (10%) (Hint:
use the skewed gate in Chapter 5)
(b) Please design the size and stage of the inverter chain to reach tpdf and tpdr < 1ns. (tpdf
and tpdr definition: Fig 2.) (10%)
Connect the output of the inverter buffer back to the input to form the oscillation loop:
(c) Calculate the oscillation frequency based on the simulated parameters. (5%)
(d) Simulate the oscillation frequency. (10%)
(e) What is the difference between (c) and (d), and comment on it. (10%)
(f) Change the output loading to 120pF, fix the stage of the inverter chain, and compare
the simulated oscillation frequency between the different output loading. (15%)
(a) Describe how you design the inverter buffer and the other device size in detail. (10%)
(b) Finish the layout(whole circuit, from “A” to “Out”), DRC, and LVS. Paste the photo of
the layout, DRC result, and LVS result in your report. Please mark the length and width
on the layout and calculate the area(𝑢𝑚2). (15%)
(c) Run the post-layout simulation and compare it with the pre-sim. (10%)
➢Please submit homework in PDF format and turn it in on the eeclass system. You can finish this
homework on handwriting paper and scan it into PDF format.
By CCHsieh