Alessandra Benedict S.

Robillos BSECE 2-1

ASSESSMENT 6

1. Recall the characteristics of the three-amplifier configuration: Common Emitter, Common Base and
Common Collector.

a. Common Emitter (CE): In this setup, the base receives the input signal, the emitter is connected to ground,
and the collector receives the output. Some of the characteristics of the common emitter amplifier are:
- Voltage gain is high.
- Current gain is moderate.
- Input impedance is moderate.
- Output impedance is high.
- Phase shift between input and output signals is 180 degrees.
b. Common Base (CB): In this setup, the base is linked to ground, the input signal is supplied to the emitter, and
the output is obtained from the collector. Some of the characteristics of the common base amplifier are:
- Voltage gain is low.
- Current gain is high.
- Input impedance is low.
- Output impedance is low.
- Phase shift between input and output signals is 0 degrees.
c. Common Collector (CC): In this arrangement, the base receives the input signal, the emitter provides the
output, and the collector is wired to the power source. Some of the characteristics of the common collector
amplifier are:
- Voltage gain is low.
- Current gain is high.
- Input impedance is high.
- Output impedance is low.
- Phase shift between input and output signals is 0 degrees.

2. In your own word define transistor giving emphasis on its construction and functions.
A semiconductor device known as a transistor amplifies or switches electronic impulses. Three layers of
semiconductor material make up the device, and these layers are usually doped with impurities to create two
different sorts of areas: "n-type" regions with extra electrons and "p-type" regions with extra electron shortages
(known as "holes").
The emitter, base, and collector are the three layers that make up a transistor. Whereas the collector is just
weakly doped to produce fewer electrons, the emitter is substantially doped to produce a lot of electrons. The base
is a thin layer of contaminants between the emitter and collector that has been doped with impurities.
Electrons move from the emitter to the collector when a voltage is provided to the base of the transistor. This
flow can be regulated by the voltage given to the base, which establishes the maximum number of electrons that
can pass from the emitter to the collector. The transistor can therefore act as an amplifier or switch.
N-type material makes up the emitter, P-type material the base, and N-type material the collector of an NPN
transistor. P-type material makes up the emitter, N-type material the base, and P-type material the collector of a
PNP transistor.
Transistors are widely used in electronic circuits to amplify or switch signals, and they are an important
component in the design of many electronic devices, including computers, televisions, radios, and smartphones.
3. Explain the operation of holes and electrons in an N P and PNP Transistor.
A transistor is a three-layered semiconductor device made up of two areas (N-type or P-type) that are doped
differently and are separated by a thin layer of the other kind. Transistors are categorized as either NPN or PNP
depending on how the three layers are arranged. The behavior of the device depends on how holes and electrons
operate in both varieties of transistors.
A thin P-type base is placed between the emitter and collector, two N-type areas, to make up the three layers of
an NPN transistor. The base area, which is a thin layer in comparison to the other two, receives electron injections
when a voltage is applied to the emitter. There are only a few holes available for the injected material because the
base is only minimally doped.
A PNP transistor has three layers: an emitter, a collector, and a thin N-type base sandwiched between two P-
type regions. The emitter injects holes into the base region when you apply a voltage to it. Only a few electrons are
left for the injected holes to recombine with after the base has been gently doped once more. As a result, a lot of
holes pass through the base and go to the collector, where they come together to create the output current. Positively
charged particles called holes are principally responsible for carrying the current in a PNP transistor.
In both NPN and PNP transistors, the base current regulates the flow of current between the emitter and
collector. The base of the transistor can be controlled to act as a switch.
In conclusion, the operation of the holes and electrons in NPN and PNP transistors—which transport current
with electrons in NPN transistors and holes in PNP transistors, respectively—is crucial to the behavior of the device.
The transistor operates as an amplifier or switch due to the injection of electrons or holes into the lightly doped base
area from the emitter.

4. Differentiate the methods of biasing transistors.

a. Fixed Bias: This approach applies a set voltage (VBB) to the base of the transistor regarding ground. The
voltage VBB is produced by a DC power supply. The transistor's base current is restricted by the base
resistor, or RB. The bias current and voltage are influenced by temperature and transistor characteristics,
which can lead to instability and distortion, making this approach, despite its simplicity, impractical.

b. Collector Feedback Bias: In this method, a voltage divider is created by connecting two resistors, RC and
RE, between the collector and ground. The output voltage is sent back to the base through resistor RB. The
operational point of the transistor is set by the voltage applied across the emitter resistor RE. Regarding
stability and adjustment for bias point temperature, this strategy performs better than fixed bias.

c. Base Bias: In this method, the base is biased using a voltage divider composed of two resistors, R1 and R2,
linked between the base and ground. The base bias voltage is based on the relationship between R1 and R2.
The transistor's base current is restricted by the base resistor RB. Low-power amplifiers and switching
circuits adopt this technique because it offers good stability.