Feng PRB Ba2nioso6
Feng PRB Ba2nioso6
The ferromagnetic semiconductor Ba2 NiOsO6 (Tmag ∼ 100 K) was synthesized at 6 GPa and 1500 °C. It
crystallizes into a double perovskite structure [F m-3m; a = 8.0428(1) Å], where the Ni2+ and Os6+ ions are
perfectly ordered at the perovskite B site. We show that the spin-orbit coupling of Os6+ plays an essential role in
opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder
neutron diffraction. The latter revealed a collinear ferromagnetic order in a >21 kOe magnetic field at 5 K. The
ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as
(Ga,Mn)As and (Cd,Mn)Te (Tmag < 180 K), the spin-gapless semiconductor Mn2 CoAl (Tmag ∼ 720 K), and the
ferromagnetic insulators EuO (Tmag ∼ 70 K) and Bi3 Cr3 O11 (Tmag ∼ 220 K). It is also qualitatively different from
known ferrimagnetic insulators and semiconductors, which are characterized by an antiparallel spin arrangement.
Our finding of the ferromagnetic semiconductivity of Ba2 NiOsO6 should increase interest in the platinum group
oxides, because this alternative class of materials should be useful in the development of spintronic, quantum
magnetic, and related devices.
DOI: 10.1103/PhysRevB.94.235158
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Ba2 NiOsO6 : A DIRAC-MOTT INSULATOR WITH . . . PHYSICAL REVIEW B 94, 235158 (2016)
zone was employed for the reciprocal space integrations in the in Ba2 CaOsO6 [41] and Ba2 CuOsO6 [42], respectively, rather
case of a cubic unit cell containing one chemical unit cell (and than 1.963 Å for the Os5+ -O bond in Ba2 YOsO6 [43]. This
two for tetragonal and four for orthorhombic unit cells). The suggests that Os is nearly hexavalent. The bond valence sum
standard generalized gradient approximation (GGA) in the (BVS) of Os was 5.72 [44], which also suggests hexavalency.
parametrization of Perdew, Burke, and Ernzerhof (PBE-96) The Ni-O bond length was 2.078(2) Å, which is comparable
[32] was used in the initial calculations. The GGA + U to 2.097 Å for the Ni2+ -O bond in Ba2 NiWO6 [45] and
functional with double counting corrections according to distinctively different from 1.960 and 1.976 Å for the Ni3+ -O
Anisimov et al. [33] (a variant of the so-called fully localized bond in LaNiO3 [46] and LiNiO2 [47], respectively. (We
limit with J = 0) was applied for the main investigations. could not find any references for Ba2 Ni3+ MO6 in accessible
Values of the screened Coulomb interaction U = 5 and databases or the literature.) The BVS of Ni was 2.07,
2 eV were used for the Ni and Os atoms, respectively. The which indicates that Ni is nearly divalent. To ensure charge
calculations were tested by varying these values between compensation in bulk, the valence distribution should be
4 and 7 eV for Ni and 1 and 4 eV for Os, respectively. nominally +2 and +6 for Ni and Os, respectively. Therefore,
6
These ranges are comparable to values reported for 3d and the formal electronic configurations should be 3d 8 (t2g eg2 ;
5d oxides ∼2−10 eV for 3d and ∼1−3 eV for 5d) [34–36]. S = 1) for Ni, provided that the exchange splitting is smaller
SOC was considered via a second variational step using the 2
than the crystal field splitting (CFS), and 5d 2 (t2g eg0 ; S = 1)
scalar relativistic eigenfunctions as basis. All calculations were for Os. (Here and throughout the paper, we use the term
conducted using the experimental lattice parameters obtained CFS in the usual meaning that includes both electrostatic and
at 4 K. Parts of the calculations were double checked with the hybridization effects.) The parameters R0 (Ni2+ ) = 1.675 Å,
full-potential local-orbital (FPLO) code [37]. Here, the linear R0 (Os6+ ) = 1.925 Å, and B = 0.37 were used in the BVS
tetrahedron method was employed with an 8 × 8 × 6 k mesh. calculations [44].
Results obtained from the WIEN2K code were found to agree To further examine the valence states of Ni and Os in
well with those from the FPLO code. Ba2 NiOsO6 , we measured the Ni-L2,3 and Os-L3 XAS spectra
together with those of reference materials (see the insets in
Fig. 1). The identical energy positions and analogous multiplet
III. RESULTS AND DISCUSSION
spectral structures of the Ni-L2,3 edges of Ba2 NiOsO6 and
The crystal structure of Ba2 NiOsO6 was refined by the NiO demonstrate the same Ni2+ valence state and NiO6 local
Rietveld technique on an SXRD profile collected at room symmetry in both compounds. In contrast, a spectral shift at
temperature. The SXRD pattern is shown in Fig. 1, and the the Os-L3 edge of approximately 1.0(1) eV to higher energy
refined crystallographic parameters are listed in Table I. The from Sr2 FeOsO6 to Ba2 NiOsO6 indicates an increased valency
results indicate that Ba2 NiOsO6 crystallizes in a fully ordered of 1 from Os5+ to Os6+ in the latter [48–51]. The energy shift,
double perovskite structure, which is cubic with space group the CFS, and the relative t2g and eg related spectral weights
F m-3m (similar to many other DPOs) [38,39]. The degree of can be clearly discerned in the second derivative spectra at
order of the Ni and Os atoms was carefully investigated in the bottom of the right inset in Fig. 1. The eg related peak is
the refinement procedure. First, the atoms were assumed to shifted by 1.3(1) eV to higher energy in Ba2 NiOsO6 relative
occupy the 4a and 4b crystallographic sites randomly and to Sr2 FeOsO6 , and the spectral weight of the t2g related peak
partially at equimolar ratio. Then, a fully ordered model,
in which Ni remained solely at the 4b site and Os at the
4a site, was tested. The fully ordered model was found to
provide the best refinement quality. We therefore conclude
that Ba2 NiOsO6 has fully ordered Ni and Os atoms, similar
to Sr2 NiOsO6 and Ca2 NiOsO6 [40]. The order has been
attributed to distinctive differences between the charge, size,
and electronic configuration of the Ni and Os atoms [39,40].
The local coordination at the magnetic Ni and Os ions
was investigated. The Os-O bond length [1.943(2) Å] was
similar to values of 1.948 and 1.955 Å for the Os6+ -O bond
2
Atom Site Occupancy x y z B (Å )
Ba 8c 1 0.25 0.25 0.25 0.36(6) FIG. 2. Structural comparison of the series A2 NiOsO6 (A = Ca,
Os 4a 1 0 0 0 0.11(4) Sr, Ba). The crystal structure symmetry changes from monoclinic
Ni 4b 1 0.5 0 0 0.19(2) (P 21 /n) to cubic (F m-3m) via a tetragonal (I 4/m) symmetry. Green
O 24e 1 0.2415(3) 0 0 0.40(2) balls represent A atoms; reddish and bluish octahedra represent NiO6
and OsO6 .
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HAI L. FENG et al. PHYSICAL REVIEW B 94, 235158 (2016)
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Ba2 NiOsO6 : A DIRAC-MOTT INSULATOR WITH . . . PHYSICAL REVIEW B 94, 235158 (2016)
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HAI L. FENG et al. PHYSICAL REVIEW B 94, 235158 (2016)
FIG. 6. (a) Difference between the zero-field profile and the profile collected in a magnetic field of 45 kOe at 5 K. (b) Evolution of a magnetic
peak with increasing magnetic field at 5 K. (c) Magnetic field dependence of the intensity of the magnetic peak at 2θ = 30◦ (λ = 2.41 Å) at a
fixed temperature of 5 K. The solid line and curve are a guide for the eyes. (d) Magnetic order model of the FM state of Ba2 NiOsO6 depicted
from the analysis of the ND profiles. The magnetic easy axis lies in the cubic [100], [010], or [001] direction.
is almost comparable to the precision of the method, which for GGA + U and a gapped state for GGA + U + SOC. For
implies a competition between the FM1 and AF2 orders. a more detailed view, we considered the partial DOS (Fig. S7
Other possible magnetic orders (not shown here) were found [17]). The Ni 3d band is fully occupied in one spin channel
3
at much higher energies and were excluded from further and partially occupied (nominally t2g eg0 ) in the other, both
investigation. with and without SOC. Due to the combined effect of CFS
The FM1 alignment is identical to the experimental FM and U = 5 eV, the unoccupied Ni eg states lie about 2 eV
state in an external magnetic field [Fig. 6(d)]. Figure 8 shows above EF . The O 2p orbitals hybridize strongly with the Ni 3d
the DOS of FM1 for cases (a) without and (b) with SOC. The orbitals below −1.5 eV (the valence region) and with the Os
band structures in Figs. 9(a) and 9(b) show a metallic state 5d orbitals.
The most interesting band located at the Fermi level is
composed mainly of Os 5d states (Fig. S7 [17]). We performed
a decomposition into ml-states (Fig. S8 [17]), which confirms
the expected t2g character of the band. Without SOC [Fig. 9(a)],
the Os t2g states form two band complexes, each containing
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Ba2 NiOsO6 : A DIRAC-MOTT INSULATOR WITH . . . PHYSICAL REVIEW B 94, 235158 (2016)
three individual bands: a spin-up complex around the Fermi certain value of U . A schematic illustration of the mechanism
level and a spin-down complex around 1 eV. The former is is depicted in Fig. 10. For the sake of clarity, details of the
partially occupied with two electrons per Os. It cannot be split DOS are ignored or changed, and the oxygen DOS is omitted.
without breaking the nonrelativistic cubic symmetry, such that
application of U does not open a gap. With SOC [Fig. 9(b)],
IV. CONCLUSION
the t2g states are split into two 8 states and one 7 state.
However, SOC alone is not sufficient to open a gap, because the Cubic Ba2 NiOsO6 was synthesized by solid-state reaction
band dispersion is greater than the spin-orbit splitting, which at 6 GPa and 1500 ◦ C. SXRD and ND revealed cubic lattice
leads to an (indirect) overlap of the band states. Although symmetry (F m-3m) with lattice parameter a = 8.0428(1) Å
we could not directly measure the strength of the SOC from at room temperature [8.0298(1) Å at 4 K]. XAS of the
the calculation, a comparison between the degree of splitting Ni and Os core levels indicated that the formal charges on
of the t2g band within the GGA and GGA + SOC schemes Ni and Os are essentially +2 and +6, respectively. Thus,
roughly estimates the spin-orbit splitting to be ∼0.17 eV. Due the formal electronic configurations should be 3d 8 (t2g 6
eg2 ;
to symmetry reduction upon inclusion of SOC, application S = 1) for Ni and 5d (t2g eg ; S = 1) for Os. The combined
2 2 0
of Coulomb corrections may increase the splitting between evaluation of theoretical and experimental results establish
occupied and unoccupied bands, which will open the gap at a Ba2 NiOsO6 as a FM insulator with Tmag of ∼100 K. SOC plays
an essential role in opening the charge gap. A metamagnetic
transition was found at 5 K, where a modulated AFM state
transforms to the FM state at a moderate magnetic field (Hc ∼
21 kOe at 5 K) without altering the semiconducting property.
DFT calculations suggest that FM and helical AFM orders
have comparable total energies and are responsible for the
metamagnetic transition. We conclude that both Coulomb and
relativistic effects must be considered equally in Ba2 NiOsO6 .
The situation is similar to the cases of the platinum group
oxide Sr2 IrO4 [36,61,62] and α-RuCl3 [63], although these
are essentially AFM materials.
1
Recently, a similar material, Ba2 NaOsO6 , having 5d 1 (t2g
tg0 ) configuration of Os, has theoretically been studied, suggest-
ing that it is an uncommon FM insulator [64]. Although the
Weiss temperature of Ba2 NaOsO6 is weakly negative (−10 K),
it might be the first material being clarified as a FM Dirac-Mott
insulator (Tmag = 6.8 K). The present compound is likely the
FIG. 9. Band structures of the FM1 state of Ba2 NiOsO6 within (a) second case; however, the FM properties are dramatically
GGA + U (red: spin up; black: spin down) and (b) GGA + U + SOC. improved as evidenced by such things as the substantially
Dashed horizontal lines at zero correspond to EF . positive Weiss temperature (+113 K) and increased Tmag near
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HAI L. FENG et al. PHYSICAL REVIEW B 94, 235158 (2016)
100 K. Thus, the cubic double perovskite reported here could ACKNOWLEDGMENTS
be useful to deepen understanding of the nature of the FM
The authors would like to thank the staff of BL15XU,
Dirac-Mott insulator.
NIMS, and SPring-8 for their help at the beamline. The
Cubic Ba2 NiOsO6 should increase general interest in
SXRD measurements were performed under the approval
platinum group oxides. Platinum group metals and their
of the NIMS Beamline Station (Proposals No. 2014A4504,
complexes have been used in many practical applications,
NO. 2014B4501, No. 2015A4502, and No. 2016B4504). The
because of their excellent catalytic activities [65]. However,
XAS measurements were supported by Chin-Wen Pao. M.P.G
electrical properties and other practical features are not well
thanks the Alexander von Humboldt Foundation for financial
known apart from high electrical conductivity and robust
support through the Georg Forster Research Fellowship
corrosion resistance. Recent studies of Ir and Os oxides have
Program. M.P.G. thanks K. Koepernik and R. Laskowski
shown that the significant SOC and extended 5d orbitals in the
for helpful discussion, and M.R. thanks M. Knupfer, U.
oxide produce outstanding electric and magnetic properties
Rößler, and H. Rosner for helpful discussion. M.P.G. and M.R.
as found in Slater insulators [20,66], Dirac-Mott insulators
thank U. Nitzsche for technical assistance. This research was
[36,61], and ferroelectric metals [67]. The largest reported
supported in part by the World Premier International Research
spin-phonon-electron coupling was recently discovered in
Center of the Ministry of Education, Culture, Sports, Science
an osmium oxide, which further illustrates this potential of
and Technology (MEXT) of Japan and the Japan Society for
high-valent platinum group oxides [68]. Growing interest in
the Promotion of Science (JSPS) through a Grant-in-Aid for
unique physical properties, as exemplified by the FM semicon-
Scientific Research (Grants No. 25289233, No. 15K14133,
ductivity of cubic Ba2 NiOsO6 , should motivate further study of
and No. 16H04501). The research conducted at ORNL’s
platinum group oxides. Our report of cubic Ba2 NiOsO6 heralds
High Flux Isotope Reactor was sponsored by the Scientific
an alternative class of FM insulator oxides, which may be
User Facilities Division, Office of Basic Energy Sciences, US
useful in developing a practical magnetic semiconductor that
Department of Energy.
can be employed in spintronic and quantum magnetic devices.
[1] T. Dietl, Nat. Mater. 9, 965 (2010). [17] See Supplemental Material at http://link.aps.org/supplemental/
[2] A. H. MacDonald, P. Schiffer, and N. Samarth, Nat. Mater. 4, 10.1103/PhysRevB.94.235158 for list of double perovskite
195 (2005). oxides, A2 MOsO6 , in which A = Ca, Sr, Ba, and M = a
[3] H. Ohno, Science 281, 951 (1998). 3d-transition metal.
[4] H. Ohno, H. Munekata, T. Penney, S. von Molnár, and L. L. [18] D. Serrate, J. M. De Teresa, and M. R. Ibarra, J. Phys.: Condens.
Chang, Phys. Rev. Lett. 68, 2664 (1992). Matter. 19, 023201 (2007).
[5] M. Wang, R. P. Campion, A. W. Rushforth, K. W. Edmonds, [19] E. E. Rodriguez, F. Poineau, A. Llobet, B. J. Kennedy, M.
C. T. Foxon, and B. L. Gallagher, Appl. Phys. Lett. 93, 132103 Avdeev, G. J. Thorogood, M. L. Carter, R. Seshadri, D. J. Singh,
(2008). and A. K. Cheetham, Phys. Rev. Lett. 106, 067201 (2011).
[6] S. Ouardi, G. H. Fecher, C. Felser, and J. Kübler, Phys. Rev. [20] Y. G. Shi, Y. F. Guo, S. Yu, M. Arai, A. A. Belik, A. Sato, K.
Lett. 110, 100401 (2013). Yamaura, E. Takayama-Muromachi, H. F. Tian, H. X. Yang, J.
[7] Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Q. Li, T. Varga, J. F. Mitchell, and S. Okamoto, Phys. Rev. B
Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S.-y. 80, 161104 (2009).
Koshihara, and H. Koinuma, Science 291, 854 (2001). [21] U. Treiber and S. Kemmler-Sack, Z. Anorg. Allg. Chem. 470,
[8] M. Parras, Á. Varela, R. Cortés-Gil, K. Boulahya, A. Hernando, 95 (1980).
and J. M. González- Calbet, J. Phys. Chem. Lett. 4, 2171 (2013). [22] M. Tanaka, Y. Katsuya, and A. Yamamoto, Rev. Sci. Instrum.
[9] S. R. Shinde, S. B. Ogale, J. S. Higgins, H. Zheng, A. J. Millis, 79, 075106 (2008).
V. N. Kulkarni, R. Ramesh, R. L. Greene, and T. Venkatesan, [23] M. Tanaka, Y. Katsuya, Y. Matsushita, and O. Sakata, J. Ceram.
Phys. Rev. Lett. 92, 166601 (2004). Soc. Jpn. 121, 287 (2013).
[10] N. Tsuda, K. Nasu, A. Fujimori, and K. Siratori, Electronic [24] K. Momma and F. Izumi, J. Appl. Crystallogr. 41, 653
Conduction in Oxides (Springer, Berlin, 2013). (2008).
[11] R. I. Dass and J. B. Goodenough, Phys. Rev. B 67, 014401 [25] F. Izumi and K. Momma, Solid State Phenom. 130, 15 (2007).
(2003). [26] J. Rodrı́guez-Carvajal, Physica B 192, 55 (1993).
[12] R. I. Dass, J. Q. Yan and J. B. Goodenough, Phys. Rev. B 68, [27] A. S. Wills, Physica B 276-278, 680 (2000).
064415 (2003). [28] A. K. Paul, M. Reehuis, V. Ksenofontov, B. H. Yan, A. Hoser,
[13] E. Langenberg, I. Fina, J. Ventura, B. Noheda, M. Varela, and J. D. M. Tobbens, P. M. Abdala, P. Adler, M. Jansen, and C. Felser,
Fontcuberta, Phys. Rev. B 86, 085108 (2012). Phys. Rev. Lett. 111, 167205 (2013).
[14] Y. Du, Z. X. Cheng, X. L. Wang, P. Liu, and S. X. Dou, J. Appl. [29] A. K. Paul, M. Jansen, B. H. Yan, C. Felser, M. Reehuis, and P.
Phys. 109, 07B507 (2011). M. Abdala, Inorg. Chem. 52, 6713 (2013).
[15] M. Azuma, K. Takata, T. Saito, S. Ishiwata, Y. Shimakawa, and [30] Y. S. Touloukian and E. H. Buyco, Specific Heat Nonmetallic
M. Takano, J. Am. Chem. Soc. 127, 8889 (2005). Solids (IFI/Plenum, New York, 1970).
[16] W. Yi, Y. Matsushita, A. Sato, K. Kosuda, M. Yoshitake, and A. [31] P. Blaha, K. Schwarz, G. K. H. Madsen, D. Kvasnicka, and J.
A. Belik, Inorg. Chem. 53, 8362 (2014). Luitz, wien2k, version 14.2, An Augmented Plane Wave+Local
235158-8
Ba2 NiOsO6 : A DIRAC-MOTT INSULATOR WITH . . . PHYSICAL REVIEW B 94, 235158 (2016)
Orbitals Program for Calculating Crystal Properties (Technis- [52] M. K. Kim, J. Y. Moon, H. Y. Choi, S. H. Oh, N. Lee,
che Universitat Wien, Austria, 2001). and Y. J. Choi, J. Phys.: Condens. Matter. 27, 426002
[32] J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, (2015).
3865 (1996). [53] J. Blasco, L. Garcia-Munoz, J. Garcia, J. Stankiewicz, G. Subias,
[33] V. I. Anisimov, I. V. Solovyev, M. A. Korotin, M. T. Czyzyk, C. Ritter, and J. A. Rodriguez-Velamaz, Appl. Phys. Lett. 107,
and G. A. Sawatzky, Phys. Rev. B 48, 16929 (1993). 012902 (2015).
[34] Y. Yuan, H. L. Feng, M. P. Ghimire, Y. Matsushita, Y. Tsujimoto, [54] L. Y. Wang, W. P. Zhou, D. H. Wang, Q. Q. Cao, Q. Y. Xu, and
J. He, M. Tanaka, Y. Katsuya, and K. Yamaura, Inorg. Chem. Y. W. Du, J. Appl. Phys. 117, 17D914 (2015).
54, 3422 (2015). [55] H. S. Nair, T. Chatterji, and A. M. Strydom, Appl. Phys. Lett.
[35] H. B. Wang, S. S. Zhu, X. D. Ou, and H. Wu, Phys. Rev. B 90, 106, 022407 (2015).
054406 (2014). [56] M. A. Laguna-Marco, P. Kayser, J. A. Alonso, M. J. Martı́nez-
[36] B. J. Kim, H. Jin, S. J. Moon, J. Y. Kim, B. G. Park, C. S. Leem, Lope, M. van Veenendaal, Y. Choi, and D. Haskel, Phys. Rev. B
J. Yu, T. W. Noh, C. Kim, S. J. Oh, J. H. Park, V. Durairaj, G. 91, 214433 (2015).
Cao, and E. Rotenberg, Phys. Rev. Lett. 101, 076402 (2008). [57] S. I. Csiszar, M. W. Haverkort, Z. Hu, A. Tanaka, H. H. Hsieh,
[37] K. Koepernik and H. Eschrig, Phys. Rev. B 59, 1743 (1999). H. J. Lin, C. T. Chen, T. Hibma, and L. H. Tjeng, Phys. Rev.
[38] R. P. Borges, R. M. Thomas, C. Cullinan, J. M. D. Coey, Lett. 95, 187205 (2005).
R. Suryanarayanan, L. Ben-Dor, L. Pinsard-Gaudart, and A. [58] C. M. Thompson, J. P. Carlo, R. Flacau, T. Aharen, I. A. Leahy,
Revcolevschi, J. Phys.: Condens. Matter. 11, L445 (1999). J. R. Pollichemi, T. J. S. Munsie, T. Medina, G. M. Luke, J.
[39] M. T. Anderson, K. B. Greenwood, G. A. Taylor, and K. R. Munevar, S. Cheung, T. Goko, Y. J. Uemura, and J. E. Greedan,
Poeppelmeier, Prog. Solid State Chem. 22, 197 (1993). J. Phys.: Condens. Matter. 26, 306003 (2014).
[40] R. Macquart, S. J. Kim, W. R. Gemmill, J. K. Stalick, Y. Lee, T. [59] H. Matsuura and K. Miyake, J. Phys. Soc. Jpn. 82, 073703
Vogt, and H. C. zur Loye, Inorg. Chem. 44, 9676 (2005). (2013).
[41] K. Yamamura, M. Wakeshima, and Y. Hinatsu, J. Solid State [60] A. E. Taylor, R. Morrow, D. J. Singh, S. Calder, M. D. Lumsden,
Chem. 179, 605 (2006). P. M. Woodward, and A. D. Christianson, Phys. Rev. B 91,
[42] H. L. Feng, M. Arai, Y. Matsushita, Y. Tsujimoto, Y. H. Yuan, 100406 (2015).
C. I. Sathish, J. F. He, M. Tanaka, and K. Yamaura, J. Solid State [61] B. J. Kim, H. Ohsumi, T. Komesu, S. Sakai, T. Morita, H. Takagi,
Chem. 217, 9 (2014). and T. Arima, Science 323, 1329 (2009).
[43] E. Kermarrec, C. A. Marjerrison, C. M. Thompson, D. D. [62] G. Jackeli and G. Khaliullin, Phys. Rev. Lett. 102, 017205
Maharaj, K. Levin, S. Kroeker, G. E. Granroth, R. Flacau, Z. (2009).
Yamani, J. E. Greedan, and B. D. Gaulin, Phys. Rev. B 91, [63] K. W. Plumb, J. P. Clancy, L. J. Sandilands, V. V. Shankar, Y.
075133 (2015). F. Hu, K. S. Burch, H. Y. Kee, and Y. J. Kim, Phys. Rev. B 90,
[44] I. D. Brown, Chem. Rev. 109, 6858 (2009). 041112 (2014).
[45] D. E. Cox, G. Shirane, and B. C. Frazer, J. Appl. Phys. 38, 1459 [64] S. Gangopadhyay and W. E. Pickett, Phys. Rev. B 91, 045133
(1967). (2015).
[46] H. Falcón, A. E. Goeta, G. Punte, and R. E. Carbonio, J. Solid [65] H. Renner, G. Schlamp, I. Kleinwächter, E. Drost, H. M.
State Chem. 133, 379 (1997). Lüschow, P. Tews, P. Panster, M. Diehl, J. Lang, T. Kreuzer, A.
[47] A. Hirano, R. Kanno, Y. Kawamoto, Y. Takeda, K. Yamaura, M. Knödler, K. A. Starz, K. Dermann, J. Rothaut, R. Drieselmann,
Takano, K. Ohyama, M. Ohashi, and Y. Yamaguchi, Solid State C. Peter, and R. Schiele, in Ullmann’s Encyclopedia of Industrial
Ionics 78, 123 (1995). Chemistry, edited by Barbara Elvers (Wiley-VCH Verlag GmbH
[48] L. S. I. Veiga, G. Fabbris, M. van Veenendaal, N. M. Souza-Neto, & Co. KGaA, Berlin, 2000).
H. L. Feng, K. Yamaura, and D. Haskel, Phys. Rev. B 91, 235135 [66] S. Calder, V. O. Garlea, D. F. McMorrow, M. D. Lumsden, M.
(2015). B. Stone, J. C. Lang, J. W. Kim, J. A. Schlueter, Y. G. Shi, K.
[49] J.-M. Chen, Y.-Y. Chin, M. Valldor, Z. Hu, J.-M. Lee, S.-C. Yamaura, Y. S. Sun, Y. Tsujimoto, and A. D. Christianson, Phys.
Haw, N. Hiraoka, H. Ishii, C.-W. Pao, K.-D. Tsuei, J.-F. Lee, Rev. Lett. 108, 257209 (2012).
H.-J. Lin, L.-Y. Jang, A. Tanaka, C.-T. Chen, and L. H. Tjeng, [67] Y. G. Shi, Y. F. Guo, X. Wang, A. J. Princep, D. Khalyavin,
J. Am. Chem. Soc. 136, 1514 (2014). P. Manuel, Y. Michiue, A. Sato, K. Tsuda, S. Yu, M. Arai,
[50] T. Burnus, Z. Hu, H. Wu, J. C. Cezar, S. Niitaka, H. Takagi, C. Y. Shirako, M. Akaogi, N. L. Wang, K. Yamaura, and A. T.
F. Chang, N. B. Brookes, H. J. Lin, L. Y. Jang, A. Tanaka, K. Boothroyd, Nat. Mater. 12, 1024 (2013).
S. Liang, C. T. Chen, and L. H. Tjeng, Phys. Rev. B 77, 205111 [68] S. Calder, J. H. Lee, M. B. Stone, M. D. Lumsden, J. C. Lang,
(2008). M. Feygenson, Z. Zhao, J. Q. Yan, Y. G. Shi, Y. S. Sun, Y.
[51] Z. Hu, M. S. Golden, S. G. Ebbinghaus, M. Knupfer, J. Fink, F. Tsujimoto, K. Yamaura, and A. D. Christianson, Nat. Commun.
M. F. de Groot, and G. Kaindl, Chem. Phys. 282, 451 (2002). 6, 8916 (2015).
235158-9