SEMESTER III

Sessional (SW)

End Semester
Examination
Sessional

(TS/PS)

(ESE)
Periods Componen

Category
Subject Total Credit

Type
SN Subject t
Code SW+ESE Cr

L T P CT TA CT+TA TE/PE

Science Based Open

BOE3** /
1 Elective/BSC (Maths- T ES/BS 3 1 0 20 10 30 70 100 4
BAS303
III/Math IV/ Math V)
Universal Human
BVE301 / Value and Professional VA/H
2 T 2 1 0 20 10 30 70 100 3
BAS301 Ethics/ Technical S
Communication
3 BEC301 Electronic Devices T PC 3 1 0 20 10 30 70 100 4
BEC302 Digital System
4 T PC 3 1 0 20 10 30 70 100 4
Design
BEC303 Network Analysis
5 and T PC 2 1 0 20 10 30 70 100 3
Synthesis
BEC351 Electronic Devices
6 P PC 0 0 2 50 50 50 100 1
Lab
BEC352 Digital System
7 P PC 0 0 2 50 50 50 100 1
Design Lab
BEC353 Network Analysis
8 and P PC 0 0 2 50 50 50 100 1
Synthesis lab
BCC301 / Cyber Security/Python
10 T VA 2 0 0 20 10 30 70 100 2
BCC302 programming
Internship Assessment
11 BCC351 P 100 100 2
/Mini Project
Total 15 5 6 25

 Mathematics –III for CE / ENV and allied branches

 Mathematics-IV for Computer/Electronics/Electrical & allied Branches, Mechanical & Allied
Branches Textile/Chemical & allied Branches
 Mathematics-V for Bio Technology / Agriculture Engineering
BEC-301 ELECTRONIC DEVICES 3L:1T:0P 4 Credits

Unit Topics Lecture

s
I Introduction to semiconductor physics: Review of quantum mechanics, electrons in periodic 8
lattices, E-k diagrams, Effective Mass.
II Energy bands in intrinsic and extrinsic silicon, carrier transport, diffusion current, drift 8
current, mobility and resistivity, sheet resistance, Generation and recombination of carriers,
Poisson and continuity equation.
III P-N junction characteristics, I-V characteristics, and small signal switching models, 8
Avalanche breakdown, Zener diode, Schottky diode, LED, photodiode and solar cell.

IV Bipolar Junction Transistor, various configurations (such as CE, CB & CC) and their features 8
I-V characteristics, DC biasing schemes for BJT, bias stability, Ebers-Moll model.
V Field Effect Transistor, configurations (such as CS, CD & CG), DC biasing schemes, MOSFET, 8
I-V characteristics, MOS capacitor, C-V characteristics.

Text/Reference Books:
1. G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson, 2014.
2. D. Neamen , D. Biswas, "Semiconductor Physics and Devices," McGraw-Hill Education.
3. S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
4. C.T. Sah, “Fundamentals of Solid State Electronics,” World Scientific Publishing Co. Inc, 1991.
5. Y. Tsividis and M. Colin, “Operation and Modeling of the MOS Transistor,” Oxford univ.
press, 2011.
6. Muhammad H. Rashid, “Electronic Devices and Circuits,” Cengage publication, 2014.

Course outcomes:
At the end of this course students will demonstrate the ability to:
1. Understand the principles of semiconductor Physics.
2. Understand the carrier transport in semiconductors.
3. Analyze and find application of special purpose diodes.
4. Understand the working principle and design of Bipolar Junction Transistor.
5. Realize the mathematical models of MOS transistors
BEC-302 DIGITAL SYSTEM DESIGN 3L:1T:0P 4 Credits

Unit Topics Lectures

I Logic simplification and combinational logic design: Number Systems, Binary 8
arithmetic, signed magnitude representation, Binary codes, code conversion,
review of Boolean algebra and Demorgans theorem, SOP & POS forms,
Canonical forms, Karnaugh maps up to 5 variables, tabulation method.
II Combinational circuits: Analysis and Design of combinational circuits, MSI 8
devices like comparators, multiplexers, demultiplexers, encoder, decoder,
circuit realization using Multiplexers and decoders, half and full adders,
subtractors, serial and parallel adders, BCD adder, barrel shifter and ALU.
III Sequential logic design: Building blocks like S-R, JK and Master-Slave JK FF, D FF, 8
T FF, edge triggered FF, Flip flop conversion, Applications of Flip Flops: ripple and
synchronous counters, Ring counter, Johnson counter, shift registers: SISO, SIPO,
PISO, PIPO, Bidirectional shift register, Universal shift register; Finite state
machines: Mealy and Moore machines, State diagrams, state reduction, Analysis
of clocked sequential circuits, Design of clocked sequential circuits
IV Logic families and semiconductor memories: TTL NAND gate, specifications, 8
noise margin, propagation delay, fan-in, fan-out, tristate TTL, ECL, CMOS
families and their interfacing, memory elements,
concept of programmable logic devices like FPGA, logic implementation using
programmable devices.
V Digital-to-Analog converters (DAC): Specifications of DACs, Weighted resistor, R- 8
2R ladder, Analog-to-digital converters (ADC): Specifications of ADCs, principle
of ADC, switched capacitor circuits: Basic concept, practical configurations, ADC
etc. ADC Types: dual slope, successive approximation, counting type, flash etc.

Text/Reference Books:
1. R.P. Jain, “Modern Digital Electronics,” Tata McGraw Hill, 4th edition, 2009.
2. A. Anand Kumar, “Fundamental of Digital Circuits,” PHI 4th edition, 2018.
3. W.H. Gothmann, “Digital Electronics- An Introduction to Theory and Practice,” PHI, 2nd
edition, 2006.
4. D.V. Hall, “Digital Circuits and Systems,” Tata McGraw Hill, 1989.
5. A. K. Singh, “Foundation of Digital Electronics & Logic Design,” New Age Int. Publishers.
6. Subrata Ghosal, “Digital Electronics,” Cengage publication, 2nd edition, 2018

Course outcomes:
At the end of this course students will demonstrate the ability to:
1. Perform numerous arithmetic and logic simplification using various methods.
2. Design and analyze modular combinational circuits with MUX / DEMUX, Decoder & Encoder
3. Design & analyze synchronous sequential logic circuits
4. Analyze various logic families and design circuits using PLDs.
5. Design various ADCs and DACs according to the given specifications.
 BEC-303 NETWORK ANALYSIS AND SYNTHESIS 3L:0T:0P 3 Credits

Unit Topics Lectures

I Node and mesh analysis, matrix approach of network containing voltage & current 8
sources and reactances, source transformation and duality.
II Network theorems: Superposition, reciprocity, Thevenin’s, Norton’s, Maximum 8
power transfer, compensation and Tallegen's theorem as applied to A.C. circuits.

III Laplace transforms and properties: Partial fractions, singularity functions, 8

waveform synthesis, analysis of RC, RL, and RLC networks with and without initial
conditions with Laplace transforms evaluation of initial conditions.
Steady state response of a network to non-sinusoidal periodic inputs, Power factor,
effective values.

IV Network function for one-port and two-port, calculation of network function for 8
ladder and general networks, poles and zeros with restrictions for driving point
functions and transform functions.
Two-Port Network: Introduction, Parameters, and Condition for reciprocity and
symmetry, Relation between port parameters, Interconnection of two ports
networks.
V Sinusoidal response from pole-zero locations, convolution theorem, behaviour of 8
series and parallel resonant circuits.
Introduction to band pass, low pass, high pass and band reject filters.

Text/Reference Books:
1. Franklin F. Kuo, “Network Analysis and Synthesis,” Wiley India Education, 2 nd Ed., 2006.
2. Van, Valkenburg, “Network analysis,” Pearson, 2019.
3. Sudhakar, A., Shyammohan, S. P., “Circuits and Network,” Tata McGraw-Hill New Delhi, 1994.
4. A William Hayt, “Engineering Circuit Analysis,” 8th Edition, McGraw-Hill Education .
5. A. Anand Kumar, “Network Analysis and Synthesis,” PHI publication, 2019.

Course Outcomes:
At the end of this course students will demonstrate the ability to:
1. Understand basics electrical circuits with nodal and mesh analysis.
2. Apply electrical network theorems.
3. Apply Laplace transform for analysis steady state and transient behaviour of network circuit.
4. Determine different network functions of Two Port network
5. Analyse the frequency response of various filters.