Student ID: z5251144

Name: JiaHao Fan

Exercise Part A: Pre-Work
Question A1: Semiconductors Recap
a) The three mechanisms are defect scattering, carrier-carrier scattering and Lattice
scattering. The Lattice scattering dominates at high temperature due to more
frequent vibration at higher temperature. In contrast to this, impurities scattering
dominates at low temperature, this is because at low temperature, carriers have more
time to interact with charged impurities, and carrier-carrier dominates at high
doping condition.
𝜇𝑚𝑎𝑥 −𝜇𝑚𝑖𝑛
b) According to the equation, 𝜇 = 𝜇𝑚𝑖𝑛 + 𝑁 𝛼 , where 𝜇𝑚𝑖𝑛 , 𝜇𝑚𝑎𝑥 , α and Nr
1+( )
𝑁𝑟

are fitting parameters.

In this case, when the sample doped with 1 x 10^16 cm^-3 Arsenic, the mobility should
be 1176.79 cm^2/Vs
c) As the equation listed above, as the sample doped with 1 x 10^16 cm^-3 phosphorus,
the mobility should be 1183.79 cm^2/Vs. If the dopant species are in different
groups, for example, the phosphorus (group 15) is used for n-type silicon, and boron
(group 13) is used for p-type silicon, with the same doped concentration, the
mobility will be significantly different, however, if the species are in a same group,
like Arsenic and phosphorous, the difference could be neglected.

Question A2:
a) The four equations are Charge neutrality, 𝑝 − 𝑛 + 𝑁𝐷+ − 𝑁𝐴− = 0 ; Law of Mass
Action, 𝑝𝑛 = 𝑛𝑖2 ; Carrier concentration and Fermi Level equations: 𝑝 =
𝐸𝑖 −𝐸𝐹 𝐸𝑉 −𝐸𝐹 𝐸𝐹 −𝐸𝑖 𝐸𝐹 −𝐸𝐶
𝑛𝑖 exp ( ) = 𝑁𝑉 exp⁡( ) , 𝑛 = 𝑛𝑖 exp ( ) = 𝑁𝐶 exp⁡( ) and
𝑘𝑇 𝑘𝑇 𝑘𝑇 𝑘𝑇

Ionization probability equation.

b) The simplification of the equations can be made by two conditions, high level and
medium doping. In a high doping condition, the Charge neutrality equation can be
written as: 𝑛 = 𝑁𝐷− = 𝑁𝐷 ; 𝑝 = 𝑁𝐴− = 𝑁𝐴 , and as a result, the law of mass equation
𝑛2 𝑛2
can be illustrated as 𝑝 = 𝑁 𝑖 ; 𝑛 = 𝑁𝑖 for N-type and P-type semiconductors
𝐷 𝐴

respectively. For medium doping, the equations for N-type will become as 𝑛 =
𝑁𝐷 𝑁𝐷 2 1/2 𝑛2 𝑁𝐴 𝑁𝐴 2 1/2 𝑛2
+ [( ) + 𝑛𝑖2 ] , 𝑝 = 𝑁 𝑖 ; for P-type , 𝑝 = + [( ) + 𝑛𝑖2 ] ,⁡𝑛 = 𝑁𝑖 .
2 2 𝐷 2 2 𝐴
Question A3
a) According to pveducation.org, at room temperature (25℃), the intrinsic carrier

concentration is 8.3 x 10^9cm-3, and at 300k, the concentration will be 9.7 x

10^9cm-3 .
Question A4
𝐸𝐹 −𝐸𝐶
a) By using the formula: 𝑛 = 𝑁𝐶 exp⁡( )，where Nc=6.2 x 10^15 x T^(3/2)
𝑘𝑇

cm-3, Ef-Ec=-0.19eV, k=8.617 x 10^-5 eV/K, the dopant concentration is 2.07

x 10^16 cm-3.
𝑛2
b) For the concentration of minority carrier, according to 𝑝 = 𝑁𝑖 , where ni= 9.65
𝐷

x 10^9cm , Nd=n=2.07 x 10^16 cm , therefore p =4.50 x 10^3 cm-3.

-3 -3

c) After doping boron atoms with a concentration 8.5 x 10^18 cm-3, and p = 8.5 x
10^18cm-3, according to the law of mass, n=10.95 cm-3.
Question A5
a) Because the concentration of free electron equals to free hole, according to
carrier concentration and Fermi level equations, there has ： 𝑝=

𝐸𝑉 −𝐸𝐹 𝐸𝐹 −𝐸𝐶
𝑁𝑉 exp ( ) = 𝑛 = 𝑁𝐶 exp⁡( )，therefore Ef can be expressed in : 𝐸𝐹 =
𝑘𝑇 𝑘𝑇

1 𝑁
[𝐸𝐶 − 𝐾𝑇𝑙𝑛 (𝑁𝐶 )]. Moreover, because 𝑁𝐶 = 6.2 × 1015 × 𝑇 3/2 𝑐𝑚−3 ,⁡𝑁𝑣 =
2 𝑉

3.5 × 1015 × 𝑇 3/2 𝑐𝑚−3 , and in reference to ecee.colorado.edu, 𝐸𝐶 = 𝐸𝑔 =

𝛼𝑇 2
𝐸𝑔 (0) − 𝑇+𝛽 (assume Ev=0), where Eg(0),αand β are the fitting parameters,

1 6.2
thus the derived expression for Ef and temperature is 𝐸𝐹 = 2 (−ln⁡(3.5)𝑘𝑇 +

1 𝛼𝑇 2
𝐸𝑔(𝑇)) = 2 (−0.572𝑘𝑇 + 𝐸𝑔(0) − 𝑇+𝛽).
b) According to the table that provided on ecee.colorado.edu, under 0k, the Eg will
be a constant as 1.166eV for silicon. Therefore, the value of Ef will be 0.583eV,
and the concentrations of n and p are both 0 cm-3. Under 300K, by using the
expression above, the Eg(300k) and Ef will be 1.12 eV and 0.553 eV
respectively, and n=p=9.37 x 10^9 cm-3.
 (Provided by
https://moodle.telt.unsw.edu.au/pluginfile.php/6590030/mod_resource/content/1/C
onstants%20and%20Equations.pdf)
c) The ration of conduction band electrons to crystalline silicon atoms is n/N=100%
x 9.37 x 10^9/(5 x 10^22)=1.87 x 10^-11 %.
Question A6
𝐸𝐹 −𝐸𝐶
a) This is a n-type doping, based on the equation: ⁡𝑛 = 𝑁𝐶 exp⁡( ) , the
𝑘𝑇

concentration of n-type doping is 2.94 x 10^14 cm-3.

b) At thermal equilibrium, based on law of mass equation, the minority
𝑛2
concentration can be calculated: 𝑝 = 𝑁 𝑖 , p=3.17 x 10^5 cm-3.
𝐷

c) Because the injected minority carrier concentration is great larger than intrinsic
minority carrier, therefore, assume p= Δ p. From rewriting the fermi level

𝑝
equations, we can get the expression of 𝐸𝐹𝑝 = 𝐸𝑖 − ln (𝑛 ) 𝑘𝑇 =0.26 eV.
𝑖

Question A7
a) According to the equation of absorption: 𝐺 = 𝛼𝐹𝑒𝑥𝑝(−𝛼𝑥), and because this
semiconductor is a thin slab, the thickness of it can be neglected. F is the
incident flux which is 1000/ (2.05 x 1.6 x 10^-19) =3.05 x 10^21 m^-2 s^-1,
G=1.59 x 10^27 m^-3/s. Photon generated electrons and holes at 300 k will be
n=p=Δn =Δp=G * t = 1.59 x 10 ^18 m^-3. Therefore, np= 2.53 x 10^36 m^-6.

b) For the semiconductor which is doped with donor impurities, the concentration
of electrons will be n= Nd+Δn = 1 x 10^22 m^-3, holes will be p= Δp= Δn =

1.59 x 10 ^18 m^-3, and np=1.59 x 10^40 m^-6.

c) The recombination rate equation is 𝑈𝑟𝑎𝑑 = 𝐵𝑟 (𝑛𝑝 − 𝑛𝑖2 ) , where Br is the
bimolecular radiative recombination constant. By comparing the results above,
in second condition the recombination rate will be faster due to the higher np
value.
Question A8
1
a) According to the conductivity equation: 𝜎 = 𝜌 = 𝑞(𝜇𝑛 𝑛 + 𝜇𝑝 𝑝), and because

arsenic atoms are n-type atoms and the silicon was heavily doped, the
concentration of p-type carriers can be neglected in this formula. Therefore, we
1
can get the resistivity equation as 𝜌 = 𝑞𝜇 𝑛= 0.071Ohm.cm. The equation of
𝑛

𝑙
resistance is 𝑅 = 𝜌 𝐴, thus, the resistance should be 7134.7 ohm.