Differences Between P-Type and N-Type

Semiconductor
linquip.com/blog/differences-between-p-type-and-n-type-semiconductor

January 10, 2021

Both p-type and n-type semiconductor are the kind of extrinsic semiconductors. The
primary factor that makes differences between p-type and n-type semiconductors is their
doping material. The addition of group III elements forms a p-type semiconductor
material, or we can say trivalent impurity to a pure (intrinsic) semiconductor. In contrast,
the n-type semiconductor material is formed by adding group V elements, i.e. a
pentavalent impurity, to a pure or intrinsic semiconductor.

Some other factors also exist that generate significant differences between p-type and n-
type semiconductors, which we will address these differences between p-type and n-type
semiconductors in detail. But, before talking about the differences between P-Type and N-
type semiconductors, take a look at a more detailed definition of semiconductors and also
p-type and n-type semiconductors.

Depending on your application, you can find all the information you need about P-type or
T-type semiconductors on Linquip’s website. We have a team of experts at Linquip ready
to answer any questions you may have about these types of devices. Check out Linquip’s
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What Is a Semiconductor?

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A material that has a conductivity among that of a conductor and an insulator is called a
semiconductor. Energy levels are interpreted in terms of bands in the band theory of
solids. Under this theory, for material to manage, electrons from the valence band should
be able to drive up to the conduction band (note that “driving up” here does not indicate
an electron physically moving up, but rather an electron getting an amount of energy that
is connected with the energies of the conduction band).

According to the theory, metals, conductor materials have a band structure where the
valence band overlays with the conduction band. As a consequence, metals can easily
conduct electricity. In insulators, the bandgap between the valence band and the
conduction band is pretty large so that it is tough for electrons to get into the conduction
band.

In contrast, semiconductors have a tiny gap between the valence and conduction bands.
By raising the temperature, it is possible to give electrons enough energy that enables
them to travel from the valence band up to the conduction band. Later, the electrons can
go in the conduction band, and the semiconductor can conduct electricity.

How metals (conductors), semiconductors, and insulators are observed under the
band theory of solids (Reference: pediaa.com)

Intrinsic semiconductors are components with four valence electrons per atom, i.e.
elements that happen in “Group-IV” of the periodic table, such as germanium (Ge) and
silicon (Si). Each atom has four valence electrons. Each of these valence electrons can
create a covalent bond with one of the valence electrons in a neighboring atom.

All of the valence electrons are included in a covalent bond. Rigorously speaking, this is
not the case: depending on the temperature, several electrons can “break” their covalent
bonds and take part in conduction. However, it is possible to significantly increase a
semiconductor’s conducting ability by adding small quantities of an impurity to the
semiconductor, in a manner designated doping. The impurity, which is added to the
intrinsic semiconductor is named the dopant. A doped semiconductor is committed to as
an extrinsic semiconductor.

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P-Type Semiconductor
P-type semiconductors are produced by doping an intrinsic semiconductor with an
electron acceptor element throughout manufacture. The term p-type regards the positive
charge of a hole. As opposed to n-type semiconductors, p-type semiconductors have a
bigger hole concentration than electron concentration.

In p-type semiconductors, cavities are the majority carriers and electrons are the minority
carriers. A typical p-type dopant for silicon is aluminum, boron, or gallium. For p-
type semiconductors, the Fermi level is underneath the intrinsic Fermi level and lies
closer to the valence band than the conduction band.

Let us have a look at the below figure that describes doping of aluminum to a pure silicon
material:

Formation of p-type semiconductor (Reference: electronicsdesk.com)

An aluminum atom contains three electrons at its valence shell. Moreover, silicon has a
total of four electrons at its valence shell. So, three valence electrons of an aluminum
atom form covalent bonds with three electrons of silicon. Nevertheless, in this case, a
vacancy of an electron (or a hole) appears. The translation of this hole is mostly
responsible for the conduction in the p-type semiconductor to take place. Therefore, in
this case, charge carriers are holes rather than electrons.

Let’s have a look at the energy level diagram of a p-type semiconductor:

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 Energy level diagram of p-type semiconductor (Reference:
electronicsdesk.com)

Here, we can recognize that the Fermi level is being near the valence band. It is evident
from the above figure that there is a tiny energy difference between the valence band and
the acceptor energy level. Hence, electrons easily drift to the acceptor energy level
producing a vacancy of electrons. Therefore, making holes in the valence band.

N-Type Semiconductor
N-type extrinsic semiconductors are created when group V elements like phosphorus,
antimony, bismuth, etc., are doped to a complete semiconductor crystal. These are named
so because doping these elements will create an additional electron in the atom’s valence
shell.

The figure below depicts the doping of phosphorus element into a pure silicon material:

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 Formation of n-type semiconductor (Reference: electronicsdesk.com)

We previously comprehend that phosphorus consists of 5 electrons at its valence shell.

When it is doped with pure silicon with 4 electrons at the valence shell, it forms four
covalent bonds. This causes the presence of an unbounded electron that is kept free to
move into the conduction band. This electron is perceived as a free electron and its
progress raises the conductivity of the material.

Let’s take a look at the energy band diagram of N-type semiconductor:

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 Energy level diagram of n-type semiconductor (Reference:
electronicsdesk.com)

Here, from the figure, it is clear that the presence of the Fermi level is near the conduction
band. We can recognize that a small energy difference exists between the donor energy
level and the conduction band. So, less energy is required by the electrons to reach the
conduction band.

Key Differences between P-Type and N-Type Semiconductor

In what follows, we itemized the key differences between p-type and n-type
semiconductors:

1. A p-type semiconductor is created when group III elements are doped to a complete
semiconductor material. As opposite, an n-type semiconductor is created when
group V elements are doped to an intrinsic semiconductor.
2. As components like gallium, boron, indium, etc., are doped to form a p-type
semiconductor; therefore, it creates an additional hole, thus also known as acceptor
atom. On the contrary, components like bismuth, arsenic, antimony, etc., are doped
to have an n-type semiconductor, creating an additional electron, thus also termed
as donor atom.
3. Another factor that makes critical differences between p-type and n-type
semiconductors is that in p-type semiconductors, holes are the majority carriers.
While in the case of an n-type semiconductor, electrons behave as majority carriers.
4. The minority carriers in the case of the p-type semiconductor are electrons,
whereas, in that of n-type semiconductors, these are holes.
5. The conductivity of the device depends mainly on the majority of carriers. Hence in
the p-type semiconductor, holes are subject to current conduction. On the contrary,
in the case of an n-type semiconductor, electrons are responsible for current
conduction.

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 6. In the case of a p-type semiconductor, the fermi-level appears closer to the valence
band than that of the conduction band. On the contrary, the Fermi level in the case
of an n-type semiconductor exists near the conduction band.
7. The collection of holes is more than electrons in the case of p-type semiconductor
material. This is while in n-type semiconductors, the concentration of electrons is
more significant than gaps.

A schematic diagram of Fermi level position within the band gap for different types of semiconductors
(Reference: researchgate.net)

Here we mentioned some key differences between p-type and n-type semiconductors. In
continuation, we propose a summarized comparison chart about differences between p-
type and n-type semiconductors.

Comparison Chart
Here is a comprehensive chart that compares the main differences between p-type and n-
Type semiconductors.

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Read More On Linquip
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What Are the Examples of N-Type and O-Type Semiconductors?

An n-type semiconductor is created by introducing a pentavalent impurity for doping. An
example of pentavalent impurity is phosphorus or arsenic. When trivalent impurities are
used for doping, p-type semiconductors are formed. Aluminum and boron are examples
of trivalent impurities.

What Are the Similarities between N-Type and P-Type

Semiconductors?

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N-type and P-type semiconductors are both intrinsic semiconductors. While they fall
under the same category of extrinsic, their behaviors are very different based on their
dopants. Nevertheless, Fermi levels are positioned towards conduction or valence bands,
depending on the type.

Conclusion
So, from the above examination, we can conclude that a p-type semiconductor is
abbreviated due to the fact that these are positive semiconductors because of extra holes.
In contrast, n-type semiconductors are termed as negative semiconductors because of the
presence of extra electrons.

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