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Vol. 1, No. 2
Automotive Power-Conditioning
Circuit Eliminates Power-Hold Relay
Automotive electronic control applications require robust input power
conditioning. Circuitry must absorb 100-V transients on the one
hand, while providing a stable dc bus for a few hundred milliseconds
after the ignition is switched off on the other. The use of high-energy
transient absorbers usually meets the former requirement, while an
electromechanical relay handles the latter. This circuit offers novel
solutions for both requirements.
Contestant Controller
[email protected]
+3.3 V
Reset R9
+3.3 V
10k R15 +3.3 V
+3.3 V
CLR +3.3 V 100
+3.3 V
+3.3 V +3.3 V R12
SW5 Q1
R1 14 4.7k U2a 16 R14
R2 U1a D1
14 100
10k +3.3 V 2 1 2 3 5
Contestant 1 100 14 D VCC Q 5 J VCC Q
1 2 3 6 U3a 2
CLK K 6
1 Q 7 74LVC06 Q
SW1 1
C1 U4a 7 CLR CLR CLK
4 15
4.7 µF 74LVC04 PRE CLR
+3.3 V GND CLR
4
PRE
74LVC74 7 +3.3 V GND
8 74LVC112 R17 +3.3 V
+3.3 V
100
Q2
R3 U2b 74LVC112 R16
R4 U1b 74LVC74 D2
10k 12 3 4 100
100 U4b +3.3 V D 9 11 9
Contestant 2 3 4 Q J Q
11 8 12 7
CLK Q K
13 U3b Q
SW2 CLR CLR 13
C2 74LVC04 10 74LVC06 CLK
PRE 14
4.7 µF +3.3 V CLR CLR
10
PRE
+3.3 V
+3.3 V
allows logical ORing with inverters from other contestant ORing with the output of the open-drain inverters or using an
inputs and connects to all J inputs of the J-K flip-flops. unused contestant input. The timeout circuit can be anything
U3 inverts the Q output_from the D flip-flop and delays it from a button to an RC circuit or some other timing circuit.
long enough to allow the Q output of the D flip-flop to clock Because flip-flops generally come packaged in pairs, the
the J-K flip-flop while the J input is still low. Once the delayed number of inputs would be even. Additionally, the design
Q output passes through the inverter, all the J inputs are taken scales up linearly. Simply add contestant sections connected
to 0. At this point, any clock signals on any of the J-K flip- as the first two are connected. The circuit was built using stan-
flops will not change the output. dard 5-V transistor-transistor logic (TTL) and open-collector
The outputs of the J-K flip-flops can then drive indicators inverters. The CMOS version of TTL was not tested but should
directly or be used as inputs to a microcontroller to ensure one function similarly.
output is selected in the unlikely event that two signals get through.
As noted, you could also use a multiplexer (several to one) to count RicHaRD BeDell is an electrical engineer with the Georgia
through the outputs, stopping on the first output that is detected institute of Technology chemistry Department, where he
high. The count would then reflect the winning contestant. maintains research equipment and designs for research and
Resetting the circuit is simply a matter of clearing the flip- support applications. He has a BS in electrical engineering
flops. A timeout signal can be implemented in two ways: from the Georgia institute of Technology.
0
1. This simple circuit allows single-adjustment tone control for fine bal-
ance adjustment or applications where multiple controls are impractical.
Amplitude response (dB)
–5
Early radio rEcEivErs and record players nearly always had a
0% (center)
knob marked “tone,” which was usually a crude low-pass filter –10 20%
with some form of severity adjustment. At best, these con- 40%
trols could partially compensate for bass loss caused by poor 60%
speaker baffling. More sophisticated controls were developed –15
80%
for more modern equipment, including the bass/treble (Baxan- 100%
dall) controls, parametric equalizers, and graphic equalizers. –20
20 100 1.0k 10k
Nevertheless, a single-adjustment tone control often can be (b) Frequency (Hz)
useful for fine balance adjustment or where multiple controls
are impractical or unnecessary. A simple version of such a 2. The tone-control circuit delivers good response characteristics in both
control provides a symmetric response that is flat at the center the lower half (a) and upper half (b) of the control range.
of the adjustment range (Fig. 1).
Moving the control in one direction simultaneously boosts Naturally, for stereo, the circuit would be duplicated and
the treble and cuts the bass until about 5.5 dB of boost and VR1 substituted with a dual, ganged component. Since the
23 dB of cut are obtained. Moving the control in the other circuit is purely passive, it is easy to insert in the signal chain.
direction boosts the bass and cuts the treble in an identical However, it must be preceded by a low impedance (below 100
fashion. Figure 2 shows the typical curves obtained from 20 Ω) and followed by a high impedance (more than 250 kΩ) for
Hz to 20 kHz with a 1-kHz center frequency, for the lower half best results. Under these circumstances, insertion loss (at cen-
and upper half of the control range, respectively. ter) approaches 6 dB.
Since this is a purely passive circuit, all component val-
ues may be scaled without affecting the ac transfer function.
With lower resistor values (and higher capacitor values), the
signal-to-noise ratio improves, but the circuit requires a lower
Send us yor Ideas For Design. We’ll pay you $150 for every Idea For
impedance to drive it. The values shown represent a good com-
Design that we publish. In addition, this year’s top design as selected by promise. Overall signal-to-noise ratio in a 20-kHz bandwidth
our readers will earn an additional $500, with two runners up each is about –113 dB referenced to 1 V rms with the control in the
receiving $250. You can submit your Ideas For Design via:
center position.
• E-mail: [email protected]
Or bY
• Postal mail to: Derek F. Bowers is a Fellow at Analog Devices, where
Ideas For Design he designs monolithic amplifiers, non-linear circuits, and
Electronic Design digital-to-analog converters. He has been with the com-
249 W. 17th Street,
New York, NY 10011 pany since its acquisition of Precision Monolithics in 1990,
Go to www.electronicdesign.com for our submission guidelines. which he had previously joined in 1978.
ElEctronic DEsign
for Design
BRAD ALBING | INTERSIL CORP.
Select the lower resistor, R1, as some and the circuit’s common ground (Fig. (OVSTATUS_2) can be used to shut off
convenient value—1.0 kΩ, 10 kΩ, or 4). Typically, 1 nF to 0.1 µF is suf- the monitored power supply.
such. Using Ohm’s law, calculate the ficient. Since the circuit does not use The preferred implementation (which
current through that resistor: V In/R1. the ISL6132’s undervoltage detection is usually called a crowbar circuit) con-
This is also the current through the upper inputs (UVMON_1 and UVMON_2), sists of a silicon controlled rectifier
resistor, R2. The voltage across R2 is they should be connected to the circuit’s (SCR) that’s connected across the pow-
VIn less VOut. R2 can then be calculated common ground. er supply bus being protected. OVSTA-
using Ohm’s law. The device’s overvoltage 1 output TUS_2 triggers the SCR’s gate. The
If you want to minimize the response (OVSTATUS_1) can be used to light gate should be bypassed with a 0.1-µF
to very narrow voltage transients, you an LED, energize an audible alarm, or capacitor so the SCR isn’t triggered
can add small capacitors (C1 and C2) provide an input to an FPGA or micro- by the rapid dv/dt of the supply bus at
between the potentiometers’ wipers processor. The overvoltage 2 output power-up.
OVSTATUS_2
R2 R1
UVSTATUS_1
UVSTATUS_2
8.45k
Alternate
VOut R5 connection:
500 raw dc
VDD input to
R1 regulator
R2 1.0k
UVMON_1 1.74k SCR1
GND
UVMON_2
OVMON_1
3. An alternative method of determining the PGOOD1 OVMON_2 1.0k 0.1 µF
voltage divider resistors involves using the PGOOD2 R3
9.09k
known voltages, VIn and VOut, and simple
Ohm’s law calculations. C1 R6
500
R4
C2
Brad alBing is a senior field 1.74k
ElEctronic DEsign
IdeasForDesign
transistor would have a maximum dissipation of 17 W. This Furthermore, even with a low RDS(on), a MOSFET will not
would appear as a 15-W resistor adjustable over 0 to 100 Ω. conduct at 0 V (VDS). At high currents, a MOSFET requires
You may be wondering why an additional power source was non-zero voltage (see note A) to sustain conduction. This cir-
introduced between the source of the MOSFET and the current cuit will maintain VDS right into a virtual short circuit.
sense resistor to achieve a “0-Ω load” condition (essentially a Finally, a hard switch such as a relay does not permit a
short across input voltage) in Figure 2. After all, why would smooth transition of resistance. The circuit described here
you need an electronic load that can go down to 0 V (i.e., short acts more like a rheostat but with the ability to be voltage con-
circuit) condition? trolled (see note B) from a remote point. The controller does
If you wanted to short an electronic load, you could always not have to carry the load current. It would require multiple
use a relay directly across the input voltage. Or if you wanted relays to apply a range of loading. This circuit can provide
it to be all solid state, you could place another MOSFET that smooth (stepless) effective resistive loading over a large range
has much higher current capacity (and very low RDS(on) that including 0 Ω.
approaches a few milliohms) directly across the input and turn The circuit can be scaled up to higher voltages and currents.
it on using a switch. This approach would be much simpler Figure 3 shows an application. For a derivation of the equa-
(and cost effective) than adding a second power supply in tions, e-mail the author at [email protected].
series with sense resistor. So, why would you use the addi-
tional power source? Note A: For example, an RFP30N06 MOSFET has a specified RDS(on)
Here’s the answer. This electronic load can check low- of 0.047 Ω. At 30 A this device requires at least 2 V VDS. This would
voltage power supplies (i.e., 3.3 V and lower) where a voltage not be an effective short circuit on a 3.3-V, 30-A power supply. On a
burden (i.e., 1 V) would not permit testing under short-circuit 1.8-V supply, it would not conduct this current.
condition. This is useful in testing the short-circuit response of Note B: The effective resistance can be controlled with a voltage-
power supplies, current trip level, and effectiveness of over- controlled amplifier (see “Op Amp And Two JFETs Form A Voltage-
load protection. Controlled Amplifier” at electronicdesign.com).
IIn RIn = ȼ × k × RS
IIn
VIn
VIn
Q D A1 15 V max
0 < RIn ≤ a × k × RS +15 V
+ Q1 RFP12N10L LT1006 1.0 A max
Aż∞ 1.0 µF
A 7 3 C2
+
– G
I In 6 2 0 ≤ RIn ≤ 100
4 –
S
CW 3 RS –15 V
2 –
k
2.5 V
a 1 C1 0.1 µF
+
A2 +24 V R4
CW 10k
LT1006
1. An electronic load typically employs a transistor across the input termi- R1 RV1 3 7
+
nals so the current flows from drain (collector) to source (emitter). 1.0 100k 6
K = 100
2
– 4
5 R3
1 –15 V
VIn 10k
0≤a≤1
Adjust RV1 for required RIn
IIn
Q CW
0 < RIn ≤ a × k × RS 3
+ R2
2 RV2
Aż∞ A –5 V 100
10k
– 1
IIn
Maximum power
– VB
dissipated in Q1= 16.5 W Adjust RV2 for 0 VIn at IIn(max) and a = 0
+ Auxiliary power supply 3. An application circuit like this one achieves a zero-load condition for
CW 3 RS testing low-voltage power supplies.
2
k
a 1
(–) (–) (–) Applying Ohm’s law to the combinations of thermal resis-
tances in each branch of the diagram in the figure, we get two
This modified thermal model of a MOSFET illustrates how the total heat equations for junction temperature:
Pj generated in the device is dissipated to ambient through two parallel
branches: junction-to-drain (leads)-to-PCB-to-ambient and junction-to-case Tj = TD + [(TD – TA) ñ ĤjD]/(ĤDB + ĤBA) =
(6)
(package)-to-ambient. TD + [(TD – TA) ñĤjD/ĤDA]
ELECTRONIC DESIGN
IdeasForDesign
Tj = TC + [(TC – TA) ñ ĤjC]/ĤCA (7) For a more accurate Tj calculation based on Equation 6,
ĤDA, which is not available from MOSFET datasheets, can
Neither of these equations contains the troublesome heat pow- be determined. According to the model, junction-to-ambient
er term, Pj, and either one can be used to calculate the junction thermal resistance, ĤjA, which is provided in datasheets, is a
temperature, Tj, as long as the case, drain, and ambient tempera- parallel combination of ĤD and ĤC resistances and ĤDA = ĤD –
tures and the thermal resistances of the package are known. ĤjD. Applying this to the model, we can get:
Consider a typical SO8 power MOSFET with thermal resis-
tances ĤCA = 380°C/W, ĤJC = 18°C/W, ĤJD = 15°C/W, and ĤDA ĤDA = ĤjA/(1 – ĤjA/ĤC) – ĤjD (12)
= 20°C/W (given in “Estimating TJ of SO-8 Power MOSFETs,”
again). Substituting these values into Equations 3 and 4, we Taking into account that ĤC is approximately an order of
obtain: magnitude greater than ĤjA, Equation 12 can be simplified as:
PjD/Pj = 1/[1 + (15 + 20)/(18 + 380)] = 0.92 (8) ĤDA ≈ (1.1 ñ ĤjA) – ĤjD (13)
In other words, 92% of the total power generated in the sili- Tj ≈ TD + [(TD – TA) ñ ĤjD]/[(1.1 ñ ĤjA) – ĤjD] (14)
con is dissipated to ambient through the drain, and the remain-
ing 8% is dissipated through the case. where all the thermal resistance values are available from the
Another important observation is that ĤCA is much greater datasheets.
than any other thermal resistance in the system, which makes We calculated the junction temperature based on parameters
the second term in Equation 7 relatively small. Assuming TC specified on a MOSFET’s datasheet and temperature mea-
= 125°C and TA = 85°C for the set of parameters given above, surements taken from the component under test conditions. A
Equation 7 gives a junction temperature of: conventional measurement technique for the drain (lead) and
case (package) temperature uses thermocouples placed on the
Tj = 125 + [(125 – 85) ñ 18]/380 = 126.9°C (10) package and on the lead areas.
This technique results in measured temperatures that are
This is only 1.9°C greater than the case temperature. Using lower than actual temperatures for two reasons. First, the
Equation 6, the drain temperature is: thermocouple itself works as a heatsink, cooling the device
down. Second, its physical placement is critical when trying
TD = {Tj + [(TA ñĤjD)/ĤDA)]}/(1+ ĤJD/ĤDA) = to determine the device’s hottest temperature. A more accurate
(11)
{126.9 + [(85 ñ 15)/20)]}/(1 + 15/20) = 108.9°C temperature measurement method uses an infrared camera to
determine the hottest temperature in the areas of interest (case
So, the drain temperature is 16.1°C lower than the case tem- and lead) without interfering with the heat flow.
perature. This implies that for an SO8 power MOSFET with Once the junction temperature is determined, the total power
a ĤjD on the same order as ĤDA and with a ĤCA much greater generated in the silicon, Pj, can be calculated:
than ĤJC, the drain temperature tends to be lower than the case
temperature. Also, the plastic case temperature is an accurate Pj = (Tj – TA)/ĤjA (15)
representation of the junction temperature.
According to the measured results in “Estimating TJ of SO-8 where ĤjA is the junction-to-ambient thermal resistance avail-
Power MOSFETs,” the difference between Tj and TC for SO8 able from the MOSFET’s datasheet. Pj also can be calculated
packages is typically 1°C to 3°C. If we use the same equations based on Equation 3 and the junction-to-drain thermal resis-
for other MOSFET packages, like PPAKSO8, D2PAK, DPAK, tance, which is also available from the datasheets:
and LFPAK with low junction-to-drain thermal resistances
(see the table, again), both the drain and case temperatures are Pj = [(1 + ĤD/ĤC) ñ (Tj – TD)]/ĤjD (16)
close to the junction temperature. For DirectFET type MOS-
FETs with metal cases, ĤJD is even lower and, according to Although ĤD and ĤC are not available from the datasheets, ĤC
Equation 6, the drain temperature is an accurate representation is approximately one order greater than ĤD, so Equation 16 can
of the junction temperature. be simplified as:
ELECTRONIC DESIGN
for Design
Ideas
GUIDO NOPPER | ERNST REINER GMBH & CO. KG, FURTWANGEN, GERMANY
ELECTRONIC DESIGN
IdeasForDesign
VCC VCC
fMax = 1/(tPLS × 4)
SN7474
DIROut
GUIDO NOPPER is Channel B
OPB 822
responsible for all 4.7k
hardware design in
paper-processing
4.7k
business machines, SN7414 BOut
especially check print- 170 Q1
ers and scanners, at 2N2222 “0” = clockwise
Ernst Reiner GmbH “1” = counter clockwise
4. These scope traces show the circuit’s response when the encoder’s 5. Resistors R1 and R2 in the direction discriminator circuit can be
shaft turns clockwise at near maximum speed. The channels are the same removed with only minor changes to the circuit’s response. Again, the
as in Figure 2. scope’s traces are the same as those in Figure 2.
ideas for design wanted Note: Type this formula into the spreadsheet cell as a con-
Send us your Ideas For Design. We’ll pay you $150 for every Idea For
tinuous entry without carriage returns.
Design that we publish. In addition, this year’s top design as selected by
our readers will earn an additional $500, with two runners up each
receiving $250. You can submit your Ideas For Design via:
• E-mail: [email protected]
Andrew ToTh retired as a senior systems engineer in
Or bY
• Postal mail to: 1999, having spent 30 years with the former GTe hawaiian
Ideas For Design Telephone Company. he earned his BSee from the
Electronic Design
University of hawaii in 1969 and obtained his Pe license
249 W. 17th Street,
New York, NY 10011 from the State of hawaii in 1975.
Go to www.electronicdesign.com for our submission guidelines.
78 ElEctronic DEsign
for Design
Ideas
VISHWAS VAIDYA | TATA MOTORS, INDIA
D1 L1 L2
VR1
VBatt
C1 R3 Z2 C8 C13 C7 C9
R1 Q2
Q1 Load 1 Load n
R2 Logic supply
R4
Z1
R8
Gnd D2 R5
Q3
Ignition CPU Driver
R7 Z3
C2 R6
This power-conditioning circuit for an automotive electronic control unit replaces bulky transient absorbers with an electronic switch, Q1, and an electro-
mechanical relay with an RC timer circuit, R5-C2-R6.
ELECTRONIC DESIGN
IdeasForDesign
MANY IMPROVEMENTS TO the follower cir- will modulate its base-emitter voltage. Figure 2 shows the measured total har-
cuit have been proposed over the years. The gate-source voltage of Q1 can be monic distortion plus noise (THD+N)
The White cathode follower doubles the modulated in the same way by adding for this circuit for three values of RL as
output current and makes the transfer resistor RS to the SLC. At a certain value RS is varied. The improvement is quite
function more linear. 1 Adding a com- of R S, modulation in V BE will be can- remarkable, with distortion for 1 V rms
mon-base amplifying stage (current fol- celled by the same modulation in VGS. below 103 dB.
lower) significantly improved the White A similar distortion-cancellation mecha- Another way to control the circuit’s
follower’s power-supply rejection ratio.2 nism occurs in a single-FET, common- balance condition is to change the cur-
Engineers at Pioneer Electronic Corp. source amplifying stage.4 rent mirror’s transfer ratio. Figure 3 illus-
took the next step by applying the White
follower to a pair of followers connected +15 V
in series. The premise of the Pioneer +
Super Linear Circuit (SLC) is that the C2 C3
RL 10 µF 33 nF
nonlinear transfer function of the first
transistor is canceled by the inverse
nonlinearity of the second transistor in R1
D
51
series.3 Input
G Q1 Output
Figure 1 presents another improve- BF862 R5
S 200 R6
ment, a JFET follower with distortion Q3
BC850 100k
compensation. Transistor Q1’s source R2
voltage reproduces the input voltage and 1M
Because Q3 has a finite transconduc- 1. A JFET follower circuit with a current mirror made up of Q2 and Q4 provides distortion cancella-
tance, its emitter current (or load current) tion based on the value selected for RS.
–60 –60
R3 = 100
R3 = R4 = 100
R4 = 33
–80 –80
THD+N (dB)
THD+N (dB)
–100 –100
RL = 6.81 kΩ RL = 6.81 kΩ
RL = 2.2 kΩ RL = 2.2 kΩ
RL = 1.2 kΩ RL = 1.2 kΩ
–120 –120
1 10 100 1000 1 10 100 1000
RS (kΩ) RS (kΩ)
2. For the three loads used in these measurements and at 1 V rms, 3. If the ratio of R3/R4 is changed, the required value of RS additionally
THD+N is below 103 dB at the optimum RS. changes.
ELECTRONIC DESIGN
IdeasForDesign
trates how the THD+N versus R S curves are shifted for a quiescent current is determined by other design objectives—
different ratio of R3/R4. In this case, Q1’s source current is a for example, noise performance.
portion of Q3’s emitter current. This can be helpful when Q1’s Because of regenerative feedback, the capacitive load of
Q3’s emitter will lead to high-frequency peaking inside the
+ loop. So the load capacitance is isolated with R5, and some
kind of frequency compensation (C1) might be needed. R6 =
RFB
100 kΩ represents the system input resistance.
The linear relationship between the voltage across RL and
FB
the input means there is a linear relationship between the
R1 Input output current and input signal. So, the circuit of Figure 1 can
Input Q1
be rearranged in the form of an amplifier with a linear transfer
function (Fig. 4).
R2
Q3
The author would like to thank Louis Vlemincq and Scott
Wurcer for their discussions.
Adjust
C1 rEfErENcEs
1. White, E.l.c., “Thermionic Valve amplifier circuit arrangements,”
RS
U.s. patent 2358428, sept. 19, 1944.
2. Taylor, P.l., “audio Power amplifier,” Wireless World, June 1973,
Q2 Q4 p. 301.
3. Ozawa, O., and ishikawa, K., “super linear circuit,” 60th aEs
4. Because of the linear R3 R4 convention, May 1980, Preprint No. 1660, pp 1-38.
relationship of the out- 4. Designing With field-Effect Transistors, edited by a.D. Evans,
put current and input Load
McGraw-Hill, New york, 1981, chapters 3-11, “Distortion in fET
signal created by the amplifiers.”
Output
circuit, it can be rear-
ranged in the form of
RL
an amplifier with a lin- Dimitri Danyuk is a consultant. He received his training in
ear transfer function. – electrical engineering at kiev Polytechnic institute, ukraine.
RO RO RO
VS RL VS VS L
CO RL CO RL
CO CS
2. An example of a complex load is a Butterworth-Van Dyke model of a piezoelectric transducer (a), which can be reduced to an equivalent circuit (b).
To match the load to the source, an appropriate inductor, L, must be added (c).
R1
R1
–
L
+
C
R
3. Instead of a bulky physical inductor, the designer can use this gyrator
circuit, which provides a simulated inductance equal to (R1)(R)(C).
RO
5. In these simulation results, the voltage across the load (top trace)
shows a minima at the resonant frequency. The phase of the voltage
across the load (bottom trace) is 0° at resonance. These results indicate
the selected inductance created a successful match.
RL
+ the gyrator circuit, which Bernard Tellegen invented in 1948
–
R1 (Fig. 3). The circuit is basically a differentiator in which the
–
CO CS operation of capacitor C is reversed. The simulated inductance
+ becomes:
C
L
R
L = (R1)(R)(C) Henries
ELECTRONIC DESIGN
for Design
GREGORY MIRSKY | ATLAS MATERIALS TESTING TECHNOLOGY
R15 D8
10k 1N5819
1. This improved design adds a discharge path for the upper-cascode MOSFET’s input capacitance to improve PFC performance.
m
m
6
6
32
30
31
31
31
31
31
32
32
32
3.
3.
3.
3.
3.
3.
3.
3.
3.
3.
3.
The cascode PFC design is built around MOSFETs M1, M2, resistors R5 and R6, capacitors C1 and C2, and diode D2 as
and M3 (Fig. 1). The previous schematic does not have M3, well as symmetric counterparts R8, R9, C5, C6, and D1. A
which serves as the M2 Cgs discharge switch. This MOSFET MOSFET driver with Schmitt triggers at the inputs is best.
significantly improves the PFC characteristics, expanding the Integrated circuit U2 is an example of an available PFC
upper operating frequency if driven properly. chip. The supply line is replaced with power source V1, and
P-channel MOSFET M3 should be controlled in-phase with diodes D4 through D7 form a line rectifier. Almost any ade-
the M1. An inexpensive low-voltage moderate RDS(on) transis- quate power diodes can be used here.
tor can be used here. Voltage source V3 represents a 12-V dc IC U2 creates a pulse-width modulated control signal across
gate offset for M2, and it should be bypassed with a 10-μF resistor R17, which splits into two delay lines. When passed
ceramic capacitor. Both M1 and M3 work best if driven from a through the delay lines, it undergoes different delays of the
two-channel MOSFET driver such as the LTC1693-1 (Linear leading and trailing edges due to the delay lines in both chan-
Technology Corp.) or similar. nels. This is how the gate-drive voltages of MOSFETs M1 and
It is important to create proper gate-drive signals for M1 and M3 are generated (Fig. 2, again).
M3 (Fig. 2). Transistor M3 should turn off earlier and turn on
later than M1 to prevent a shoot-through current from the volt- GReGoRy MiRsky is the principal electrical engineer at
age source V3 through closed M3 and M1. atlas Materials Testing Technology, an ametek company.
Two delay lines, whose parameters depend on the MOS- He holds an Ms from the leningrad Mechanical institute (now
FETs used, create the control voltage for M1 and M3. These known as st. Petersburg Baltic Technical University), Russia,
delay lines are built on similar low-pass filters comprising and a PhD from the Moscow Pedagogical University, Russia.
ElEctronic DEsign
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Ideas
GIRISH CHOUDANKAR | EMPHATEC INC., MARKHAM, ONT., CANADA
ELECTRONIC DESIGN
GREGORY MIRSKY | ATLAS MATERIAL TESTING TECHNOLOGY, AN AMETEK COMPANY [email protected]
Ct Comp
Ntr = w2/wl
SS FB
Gnd PGnd
GREGORY MIRSKY, principal electrical engineer, holds an
1. This simplified schematic of part of a bridge converter that is a compo- MS from the Leningrad Mechanical Institute, Russia (now
nent of a current-control SMPS illustrates how designers can compute the known as St. Petersburg Baltic Technical University) and a
value of a slope-compensation resistor to ensure stable operation. PhD from the Moscow Pedagogical University, Russia.
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IdeasForDesign
So: Now you can calculate the Rcs value Controllers,” http://cds.linear.com/docs/
I 9 ( ² ' ) 5 FV that will ensure smooth operation of the Datasheet/372212fa.pdf
,VO 5 VO VZ ≥ ORDG
' '1 WU Z FW / ILOWHU power supply in the normal mode: 3. “Modelling, Analysis And Compensation
Of The Current-Mode Converter,” www.
Then: I 1 Z / 9 ti.com/lit/an/slua101/slua101.pdf
5 FV < VZ WU FW ILOWHU WK
9 ( ² ' ) 5 FV 9ORDG ( ² ' )
5 VO ≥ ORDG
,VO IVZ 1 WU Z FW / ILOWHU
After making this calculation and
and: selecting a standard value, you can use
9ORDG ( ² ' ) 5 FV that value in Equation 12 to compute Rsl.
9VO ≥
IVZ 1 WU Z FW / ILOWHU If the controller IC that you employ
does not provide the required current
The value of Rcs is obtained by using sawtooth waveform, you can derive
the ratio of U1’s sensing voltage to the it from the voltage across the tim-
operating current, scaled by the current ing capacitor. Just add a simple power
transformer. amplifier based on two complementary
Sometimes, however, the IC’s current- bipolar transistors.
sensing input has a current-limiting
threshold, Vth. If needed to avoid reach- REFERENCES
ing the current-limiting mode, Rcs may 1. “Average Current Mode Control of Switching
be calculated using: Power Supplies,” Lloyd Dixon, http://ecee.
colorado.edu/~ecen5807/course_mate-
9 ( ² ' ) 5 FV rial/papers/cpm/Dixon_1990.pdf
9WK > ORDG
IVZ 1 WU Z FW / ILOWHU 2. “LTC3722-1/LTC3722-2 Synchronous
Dual Mode Phase Modulated Full Bridge
IDEASFOR DESIGN
T
he Ideas for Design department is one of the most popular This “small” circuit tackles a much larger challenge with clar-
and widely followed sections of Electronic Design, and ity and directness.
with good reason: it embodies the essence of engineer- Runner-up “Electronic Load Achieves 0 Ω” by Henry San-
ing. How so? In an IFD, an engineer takes standard parts and tana packs a one-two punch. First, it shows how to build an
connects them in a clever, innovative configuration to solve a electronic load, which is an increasingly common, more versa-
specific problem simply and crisply, and usually at lower cost tile replacement for a resistor-based load when doing test and
than alterative approaches. Further, since in most cases it’s a evaluation. But it also shows you how adding just a little more
circuit alone without needing any software to function, anyone circuit complexity lets you take this load down to 0 Ω.
can look at the schematic and description to study, follow, and Although that seems unnecessary—after all, you could just
grasp the design’s intent and execution. hard-short the load using an electromechanical relay—the
This year’s Best Idea for Design, “Simple Circuit Turns author explains why being able to electronically transition
PWM Into a Digitally Adjustable Precision Reference” by down to 0 Ω smoothly actually results in more meaningful and
Rick Mally, tackles a common design dilemma of needing insightful data, especially with low-voltage supplies. That’s
a function that is both precise and adjustable, preferably via representative of true engineering insight, when incurring a
digital control. small additional burden in component count avoids a potential
The circuit uses just six passive components, including a problem and also enables better results.
common, low-cost LM431 shunt regulator, to configure a
Sallen-Key filter that, in turn, transforms a digital pulse-width BILL SCHWEBER is an electronics engineer who has written three
modulated output into a fully controlled dc voltage. The 0% textbooks and hundreds of articles, opinion columns, and product fea-
to 100% duty cycle of the PWM signal maps to an output tures. He also has designed for industrial controls at Instron Corp. and
between –2.5 and +2.5 V (based on a 0- to +5-V PWM signal). done applications and product marketing at Analog Devices.
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Ideasfor desIgn
all, why would you need an electronic permit testing under short-circuit condi- can provide smooth (stepless) effec-
load that can go down to 0 V (i.e., short tion. This is useful in testing the short- tive resistive loading over a large range
circuit) condition? circuit response of power supplies, including 0 Ω.
If you wanted to short an electronic current trip level, and effectiveness of The circuit can be scaled up to higher
load, you could always use a relay overload protection. voltages and currents. Figure 3 shows an
directly across the input voltage. Or if Furthermore, even with a low RDS(on), application. For a derivation of the equa-
you wanted it to be all solid state, you a MOSFET will not conduct at 0 V (VDS). tions, e-mail the author at hsantana@
could place another MOSFET that has At high currents, a MOSFET requires pacbell.net.
much higher current capacity (and very non-zero voltage (see note A) to sustain
low R DS(on) that approaches a few mil- conduction. This circuit will maintain Note A: For example, an RFP30N06 MOSFET
liohms) directly across the input and turn VDS right into a virtual short circuit. has a specified RDS(on) of 0.047 Ω. At 30 A
it on using a switch. This approach would Finally, a hard switch such as a relay this device requires at least 2 V VDS. This
be much simpler (and cost effective) than does not permit a smooth transition of would not be an effective short circuit on a
adding a second power supply in series resistance. The circuit described here 3.3-V, 30-A power supply. On a 1.8-V supply,
with sense resistor. So, why would you acts more like a rheostat but with the it would not conduct this current.
use the additional power source? ability to be voltage controlled (see note Note B: The effective resistance can be
Here’s the answer. This electron- B) from a remote point. The control- controlled with a voltage-controlled ampli-
ic load can check low-voltage power ler does not have to carry the load cur- fier (see “Op Amp And Two JFETs Form A
supplies (i.e., 3.3 V and lower) where rent. It would require multiple relays to Voltage-Controlled Amplifier” at electron-
a voltage burden (i.e., 1 V) would not apply a range of loading. This circuit icdesign.com).
RIn = α × k × RS
IIn IIn
VIn VIn
D A1 15 V max
+15 V
Q Q1 RFP12N10L LT1006 1.0 A max
0 < RIn ≤ a × k × RS 1.0 µF
+ 7 3 C2
A→∞ +
A G
6 2 0 ≤ RIn ≤ 100
– –
4
I In S
–15 V
CW 3 RS
–
2
k
2.5 V C1 0.1 µF
a 1
+ R4
10k
CW A2 +24 V
LT1006
R1 RV1 3 7
1. An electronic load typically employs a transistor across the input termi- +
1.0 100k 6
nals so the current flows from drain (collector) to source (emitter). K = 100
2
– 4
5
1 –15 V
VIn R3
0≤a≤1 10k
Adjust RV1 for required RIn
IIn
Q 0 < RIn ≤ a × k × RS
+
A→ ∞ A CW
– 3
2 RV2 R2
IIn –5 V 10k 100
1
– VB
CW 3 RS
3. An application circuit like this one achieves a zero-load condition for
2 testing low-voltage power supplies.
k
a 1
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