M.M.I.C.

, Wide Band Amplifiers 1

The MMIC (Microwave Monolithic Integrated Circuits) are wide band integrated circuits often used as simple amplifiers,
they are designed to replace the transistor and help the designer to build RF amplifiers. Loosely but realistically MMICs
are the evolution of thick film ICs (in fact in this section are listed also some old thick film amplifiers).
Without going into technical detail, because it is available a very big quantity of documentation, in few words we can
say that the MMIC is used to simplify an amplification chain without worrying about possible self oscillations, instability,
impedance mismatching or the bias, the MMIC can solve all these problems. With MMICs design is made easier,
securer and more repeatable, all models are matched nearly at 50 / 75 Ω of input impedance.
MMICs are used to ease design process and improve the RF circuits repeatability, their implementation is very easy so
the Ohm’s law only is needed to calculate the other components of the circuits. Here are explained the 3 classical
circuits for power supply and decuopling.
A) MMICs normally use the 4 leads configuration, input, output with power supply and two gound connections. Rarely
some types have a separate power supply lead, some others have the bias lead to adjust the current.
B) The decoupling capacitors are used only to block the DC power supply, the value must be a short circuit at the
desired frequency. Cb bypass capacitor is used only to short circuit the RF to avoid self oscillations of the MMIC
and to avoid that possible noise can enter in the MMIC, the choice of this capacitor is very important if the MMIC
has a high gain or there are more than one amplification stage.
C) The bias resistor has the purpose of lowering the power supply voltage from the available value to the right power
supply value of the MMIC (for example from Vc 12V to Vd 5V)
D) It is always suggested to use an inductance, in this case the decoupling is increased on the power supply, it can be
avoided in the case that the calculated R is so high that it is enough to obtain a good decoupling (for example R >
150 / 200 Ω). Instead the inductance must be inserted when the power supply voltage is similar to the working
voltage of the MMIC (that is if Vd = Vc), in fact in this case it is not possible to insert the bias resistor on power
supply and the decoupling is made by the inductance itself. The same if the power supply resistor has a too low
value (up to 80 / 100 Ω).
E) To improve performaces of these devices, especially at higher frequencies, it is suggested to use SMD or with very
short leads components in particular for all ground connections

Example of calculation for the famous MAR6, assume to have 6V (Vc) of

power supply, from the MAR6 specifications we see that it works with 3.5V of
power supply (Vd) and a current of 16mA { Vc and Vd in V - Id in A }
R calculation = (Vc - Vd) : Id ( 6-3,5 ) : 0,016 = 150Ω
In this case being R quite high we can avoid to put the decoupling
inductance.
Cd examples Cb examples
min freq. = 1 MHz about 47 nF ≥ 470 nF
min freq. = 10 MHz about 4,7 nF ≥ 47 nF
min freq. = 100 MHz about 470 pF ≥ 4.7 nF
min freq. = 1 GHz about 47 pF 470 pF + 10 nF
We suggest to use Cd input and output without exceding the capacity
because it is better that the circuit tends to attenuate at lower frequencies.
(A capacitor in series behaves as a bland high pass filter).

In case the power supply voltage is very close or equal to that of MMIC
(Vc = Vd) it is not possible to use a bias resistor, in this case it is mandatory
to use an inductance to separate the RF between the MMIC and the power
supply, examples of L values:
min freq. = 1 MHz about 27 µH - min freq. = 10 MHz about 2.7µH
min freq. = 100 MHz about 270nH - min freq. = 1 GHz about 27 nH

This is the optimal circuit configuration because it is obtained the maximum

possible decoupling, in fact it is summed the resistance value to the
inductance reactance.
The limiter resistor is useful also to permit a sort of limitation on the bias
current and accordingly a higher tolerance in power supply voltage.

NOTE : in case of high value inductances (> 10 µH) should be considered a little residual resistance due to the wire of
the inductance itself.

R.F. elettronica di Rota F. www.rfmicrowave.it [email protected] tel ++39.02.99 48 75 15 fax ++39.02.99 48 92 76

 M.M.I.C. , Wide Band Amplifiers 2

Given the huge variety of MMIC devices, but especially the wide variety of performances and
technical specifications, we decided to group all these devices in a table of 3 pages. To facilitate the
search we have divided them according to their main characteristics:
Low cost and general purpose low cost
Low noise NF < 3 dB
High dynamic medium output power +10 / +17 dBm
High output power > 17 dBm > 50 mW
Very flat gain it can be used on instrumentation to have flat gain on wide band
high S12 , ie high reverse insulation between output and input, for example as
High reverse insulation buffer for VCOs and oscillators
Variable gain with pin for gain control
Differential amplifier
Low voltage power supply < 3.5 V
Other special feateures see table below

This table is used for a fast search of the device, other features will be then shown on following
pages with prices and eventually a test report for MMICs considered more interesting.

MMICs selection guide

FREQ. GHz gain out power NF 3° order IP pwr sup.
function cod. CASE
min - max max dB min dBm at GHz dB at GHz dBm at GHz V mA
AG101 SMD 60MHz-3GHz 15 11 +15 1 2.4 2 +28/+32 1 4.5 50
ERA 1 plastic up to 8 GHz 12 10 +11.5 2 +26 2 3.6 40
ERA 2 plastic up to 8 GHz 16 12 +12.4 2 +26 2 3.6 40
SNA 286 plastic DC 6 15 11 +14 2 5.7 2 +29 2 3.8 50
INA 34063 SMD DC 3 ± 20 dB +8 2 4.5 2 +18 2 3 30
INA 52063 SMD DC 2.5 23 16 +8 1 3.5 0.1 +20 1 5 30
LMX 2119 SMD 1.5 2.5 20 +23,5 2 3.6 350
MAR 1-MSA0186 plas-cer DC 2.5 18 9 +2 0.5 5.5 0.5 +14 0.5 5 17
MAR 2 - RAM2 plas-cer DC 3.5 12.5 8 +5 1 +17 1 5 25
MAR 3 plas-cer DC 3 12.5 8 +10 1 +23 1 5 35
GENERAL MAR 4 plast.cer DC 2 9 8 +12.5 1 +25.5 1 5.2 50
PURPOSE MAR 6 plas-cer DC 1.5 20 13 +2 1 3 0.5 +14 0.5 3.5 16
MAR 8 plast-cer DC 2 27 16 +12.5 1 3.3 1 +27 1 7.8 36
and MAV 11 plastic DC 2 13 7.5 +17.5 0.5 3.6 0.5 +30 0.5 5.5 60
MGA 72543 SMD up to 6 GHz 17 9 +12 5 1.5 4 +10 2 3 20
1.6 on all
LOW MGA 85563 SMD 0,8 6 19 15 +1 3
bandwidth
+12 3 3 20-30

COST MSA 0711 e 0735 SMD DC 3 13 8 +5.5 1 5 1 +18 1 4 22

1.4 1.5
RF 2472 SMD DC 6 21 9 +2 2
2 5
+18 3 6
SGA 2186 plastic DC 5 10 7.5 +7 1.5 4.4 2 +19.5 2 2.2 20
SGA 2286 plastic DC 5 15 10 +7 2 3.5 2 +19 2 2.2 20
SGA 2386 plastic DC 5 18 10 +7.5 2 3.3 2 +20 1.5 2.7 20
SGA 2486 plastic DC 5 21 11 +7.5 2 3.3 2 +20 2 2.7 20
SGA 3286 plastic DC 5 15 10.5 +11.5 1.5 3.8 2 +24 2 2.6 35
SH 225 special 1 - 900 MHz 21 19 +2 0.5 5.5 0.5 24 23
μPC 2709T SMD DC 2.5 22 19 +8 0.5 5 1 5 25
μPC 2771T SMD DC 2.5 21 18 +11.5 1 6 1 3 35

R.F. elettronica di Rota F. www.rfmicrowave.it [email protected] tel ++39.02.99 48 75 15 fax ++39.02.99 48 92 76

 M.M.I.C. , Wide Band Amplifiers 3

FREQ. GHz gain out power NF 3° order IP pwr sup.

function cod. CASE
min - max max dB min dBm at GHz dB at GHz dBm at GHz V mA
# AG101 SMD 60MHz-3GHz 15 11 +15 1 2.4 2 +28/+32 1 4.5 50
# AM1 - AG102 SMD 60MHz-3GHz 15 11 +18 2 2.4 2 +33/+36 1 4.4 60-80
# AM50-0003 SMD 800-1000MHz 15 +18 1.2 3-8 20-60
# AM50-0004 SMD 1.4 -2 GHz 14 +18 1.4 3-8 20-45
INA03184 plas-cer DC 4 25 12 -1 1 2.5 1.5 +7 1.5 3-5 10
# MAALSS0034 SMD 70MHz-3GHz 15 9 +23 2 1.6 2 +36 2 5 88
MAAM12031 + 032 SMD 1.7 - 2 GHz 20 13 +2 / +7 1.7 / 1.8 +2 / +7 5 5/8
LOW # MGA 62563 SMD up to 2.5GHz 23 13 + 17 0.9 1 +32.5 3-5 60
# MGA 72543 SMD up to 6 GHz 17 9 +12 5 1.5 4 +10 2 3 20
NOISE # MGA 81563 SMD 0.5 6 12.5 10 +14.8 3 2.7 3 +27 2 3 42
1.6 on all
MGA 85563 SMD 0,8 6 19 15 +1 3
bandwidth
+12 3 3 20-30
NF ≤ 3 dB MGA 86563 SMD 0.5 6 (8) 22 15 +4.3 4 1.7 4 +15 2.4 5 14
MGA 86576 ceramic 0.5 10 23 12 +7 2.5 1.8 6 +16 4 4-10 16
# = high MAR 6 plas-cer DC 1.5 20 13 +2 1 3 0.5 +14 0.5 3.5 16
dynamic # MGF 7002 metallic 0.8 1.9 18 16 +10 1.6 2.5 +22 1 10/-6 90
# MGF 7003 ceram 0.1 1.9 12 10 +10 1.8 <2.5 +24 1 3 30
1.4 1.5
RF 2472 SMD DC 6 21 9 +2 2
2 5
+18 3 6
# SGA 3586 plastic DC 5 26 13 + 13.5 1.5 2.5 2 +25.5 1.5 3.3 35
# SGA 4586 plastic DC 5 26 10 +16 / +13 1,8 1 +27 2 3.6 45
# SGA 5586 plastic DC 4 26 14 +18 / +15 2.6 2 +30 1.5 3.9 60
# UTO 1043 metallic 5-1300 MHz 11 8.7 +9 1 2.5 0.5 +22 0.5 12-15 25
ERA 1 plastic up to 8 GHz 12 10 +11.5 2 -- +26 2 3.6 40
ERA 2 plastic up to 8 GHz 16 12 +12.4 2 -- +26 2 3.6 40
ERA 3 plastic up to 8 GHz 22 12 +11.5 2 -- +23 2 3.5 35
ERA 4 plastic up to 8 GHz 14 12 +16.8 2 -- +32 2 5 65
INA 10386 plastic DC 4 26 14 from +12 to +14 3.8 1.5 +23 1.5 6 45
MGA 64135 ceramic 0.5 10 14 8.6 +12 upto 8GHz -- -- 8-11 50
HIGH MGA 72543 SMD up to 6 GHz 17 9 +12 5 1.5 4 +10 2 3 20
MGA 81563 SMD 0.5 6 12.5 10 +14.8 3 2.7 3 +27 2 3 42
DYNAMIC MAR 3 - VAM3 plas-cer DC 3 12.5 8 +10 1 -- +23 1 4-6 35
and MSA 0311-RAM3 SMD DC 2.5 11.5 8 +10 0.5 -- +22 1 4-5.6 35
MEDIUM MAR4-MSA0436 ceramic DC 3 8.5 6 +13 0.5 -- 25.5 1 4-6 50
POWER MAR8-MSA0870 plas-cer DC 3 32 12 +13 0.5 3.3 1 +27 1 6-9 36
NGA 286 plastic DC 6 16 11 +15 2 3.4 2 +31 2 4 50
SGA 3286 plastic DC 5 15 10.5 +11.5 1.5 3.8 2 +24 2 2.6 35
≥ + 10dBm SGA 3386 plastic DC 5 18 11 +11.5 1.5 3.5 2 +24 1.5 2.6 35
( ≥ 10 mW ) SGA 3486 plastic DC 5 23 12 +12.5 2 3.2 2 +25 1.5 2.9 35
SGA 3586 plastic DC 5 28 13 + 13.5 1.5 2.5 2 +25.5 1.5 3.3 35
SGA 4186 plastic DC 5 10 8 + 13.5 1.5 -- +28 / +25 3.2 45
SGA 4586 plastic DC 5 26 10 +16 / +13 1,8 1 +27 2 3.6 45
SGA 5586 plastic DC 4 26 14 +18 / +15 2.6 2 +30 1.5 3.9 60
SNA 286 plastic DC 6 15 11 +14 2 -- +29 2 3.8 50
SNA 386 plastic DC 4 22 15 +11 2 4.5 2 +23 2 3.8 35

R.F. elettronica di Rota F. www.rfmicrowave.it [email protected] tel ++39.02.99 48 75 15 fax ++39.02.99 48 92 76

 M.M.I.C. , Wide Band Amplifiers 4
continue , MMIC selection guide
FREQ. GHz gain out power NF 3° order IP pwr sup.
function cod. CASE
min - max max dB min dBm at GHz dB at GHz dBm at GHz V mA
# AM1 - AG102 SMD 60MHz-3GHz 15 11 +18 2 2.4 2 +33/+36 4.4 60-80
CGY 2014 SMD power MMIC, cellular dual band 900 + 1800 MHz +35 / +32 dBm out power
# CGY 21 metallic 20-1100MHz 20 15 +19/+20 0.9 4 0.8 +32.5 0.8 5 160
# ERA 5 plastic DC 6 (10) 20 12 +18 2 4.5 1 +33 2 5 65
ERA 6 plastic DC 6 (10) 11,5 10,5 +18 2 -- +36 2 5.5 70
GPD 405 metallic 10 - 500 MHz 15 12 +23 0.4 6 0.1 +29 0.1 15 90
CGY 52 SMD 100 2.500 13 15 +19 200-1800 4.8 1.8 +32 1 4.5 160
HIGH LMX 2119 SMD 1.5 2.5 20 +23,5 2 -- -- 3.6 350
POWER # MAALSS0034 SMD 70MHz-3GHz 15 9 +23 2 1.6 2 +36 2 5 88
# MAAMSS0049 SMD 250 MHz 4000 20 11 +28.5 2.4 3.5 2 +43 2 5 250
≥ +17 dBm # MAV 11 plastic DC 2 13 7.5 +17.5 0.5 3.6 0.5 +30 0.5 4.5-6 60
( ≥ 50 mW ) # MGA 62563 SMD up to 2.5GHz 23 13 + 17 0.9 1 +32.5 3-5 60
MGA 82563 SMD 0.4 6 14 9 +17 2 2.2 2 +31 2 3 84
# = low MGA 83563 SMD 0.5 6 21 17 +19 1 - 3 -- -- +29 1-6 3 150
noise MRFIC 1859 SMD power MMIC, cellular dual band 900 + 1800 MHz +34 / +32 dBm out power
NGA 486 plastic DC 5 15 10 +19/+18 0.5 / 2 4 2 +38/+34 4.8 80
PM 2107 plas smd 2 2.6 26 20 +26/30pk 2.4 -- -- -- -- +5V -1.2V
RF 2145 SMD 1 2 25 20 +26 1.8 -- -- 4.5 400
RF 2174 - 2175 SMD power MMIC, cellular dual band 900 and 1800 MHz + 36 / + 33 dBm
SNA 676 ceramic dc 7 11 7 +18 2 +36 0.1-2 5.7 70
UTO 2013 metallic 500-2000MHz 10 + 21 4.5 +33 15 100
VNA 25 SMD 0.5 2.5 18 14 +18.2 5.5 +27 5 85
ERA 1 plastic DC 9-11 12-16 -- +12 2 -- +26 2 3.8 50
ERA 6 plastic DC 6 11,5 10,5 +18 2 -- +36 2 5.5 70
INA 03184 plas-cer DC 4 25 12 -1 1 2.5 1.5 +7 1.5 3-5 10
INA 10386 plastic DC 4 26 14 +12 to +14 3.8 1.5 +23 1.5 6 45
VERY MGA 81563 SMD 0.5 6 very flat gain up to about 2 GHz 3 42
MSA 0910 ceramic
FLAT MWA …. metallic case, particular use for instrumentation and professional, various types
GAIN GPA…. GPD…. available: low noise, high power, etc... dc - 2 GHz
SH 225 special 2 900 MHz 21 +2 24 23
SNA 286 plastic quite flat form100 MHz to 1.5 GHz
μPC 2709T SMD DC 2.5 22 19 +8 0.5 5 1 5 25
μPC 2771T SMD DC 2.5 21 18 +11.5 1 6 1 3 35
INA 34063 SMD DC 3 ± 20 dB reverse insulation > 30 dB 3 30
HIGH μPC 2709T SMD DC 2.5 22 19 rev. insulation > 30dB low cost 5 25
REVERSE MAX 2470 - 2175 S M D 10-500 MHz 13 15 rev. insul. >50dB VCO buffer 3-5.5 6
INSULATION MGA 83563 SMD 0.5 6 21 17 insul. < 2GHz >35dB - >2GHz 30dB 3.3 150
SH 225 1- 900 MHz very flat amplifier with 40dB of reverse insulation 24 23
CGY 120 gain control range = 50 dB, bandwidth up to 2.5 GHz
VARIABLE
IVA05208-14208 gain control range = 30 dB (IVA05208) -- 34 dB (IVA14208) more spec. see below
GAIN RF 2145 high power, gain control range = 40 dB
DIFFERENTIAL IVA 05208 SMD DC 2 30 20 group delay is within 4-6.5 35
amplifier IVA 14208 SMD DC 3 25 18 400 pSec 5-8 38
LOW GPD 110 - INA34063 - INA03184 - MAR 6 - MAX... - μPC 2771 see more detailed
VOLTAGE MGA 62563 + 7254 + 82563 + 83563 + 85563 - MGF 7003 - MSA 07... specifications in the next
< 3.5 V SGA 2186 + 2286 + 2386 + 3286 + 3386 + 3486 pages
GPD 110 for very low frequencies starting from 50 - 100 KHz up to 1.1 GHz , Vmin 2.5 V
MGA 64135 high performances up to10 GHz, high output level, HI-REL professional ceramic case
with
MGA 72543 it has a switch inside to exclude it from the circuit
MGA 86576 for microwave, ceramic case, works up to 10 GHz, low noise
special MSA 0910 for instrumentation, limited but ultra-flat gain 0.1-4 GHz HI- REL special case
IDA 07318 1.5 Gbit driver for laser or led, TX datas on fiber optic
features MAR1-MSA 0185 very low VSWR up to 3 GHz on both input and output ports
VNA 25 it has already inside two dc block capacitors and the bias network

R.F. elettronica di Rota F. www.rfmicrowave.it [email protected] tel ++39.02.99 48 75 15 fax ++39.02.99 48 92 76

 Low noise high dynamic M.M.I.C. 5
The following products AM-1, AG-101G, AG-102 and MAALSS0034 are MMICs from the prestigious Watkins Johanson
and MaCom brand for high dynamic range applications (+16 to +22 dBm), but with a very low noise (1,6 to 2,5 dBNF).
The case is the consolidated SOT89 that guaratees a good dissipation even when it is used with a fair current. These
MMICs implement GaAs-FET technology and they are suitable for many applications, especially as post-amplifier after
very low noise stages.
For example, suppose to use them after a MGA-62563 MMIC or a MAR6, you will get some more decibel of gain greatly
increasing the dynamic with an output level up to +16 / +22 dBm. Another interesting application is as a driver for a
broadband power module like BGD802, in fact the BGD802 to give the output power of 1 W it requires about 30 mW of
input, so these MMICs are the right choice also as TX driver. The application diagram is extremely simple, just the usual
dc-block capacitor and a choke for power supply are needed.
In conclusion, the AM-1, AG-102, AG101G and MAALSS0034 MMICs can be used for all applications requiring good
dynamic associated with a low noise, as drivers for a higher power stage but also as a buffer stage with medium gain
suitable for any need.

MMIC: AM-1 AG-102 AG-101G MAALSS0034, some applications

MGA-62563
AM-1 AG-102 ultra low noise
AG-101G MAALSS0034 high dynamic aplifier
+ = 100MHz - 2.5 GHz NF 1.1 - 1.5 dB
gain 20 - 30 dB
output +16 / +22 dBm , OIP3 +33 / +36dBm

AM-1 AG-102
MAR-6
AG-101G MAALSS0034
low noise amplifier
+ = 50 / 70MHz - 1.5 GHz NF 2.5 - 3.5 dB
gain 22 - 35 dB
output + 18 dBm , OIP3 +26dBm

AM-1 AG-102
wide band power module, wide band power amplifier
AG-101G
example BGD-802
MAALSS0034
50 / 70 MHz - 1 GHz #
+ = output 0,5 - 1 W #
gain about 30 dB #
# depending on the used power module

AM-1 AG-102 -- power transistor

AG-101G or medium-high power amplifier
MAALSS0034
+ -- power module
or
= Depending on the used final
-- power MMIC

MMIC AM-1 AG-102 Solder to a little

copper ground plain
AG-101G MAALSS0034 for dissipation
typical application diagram
MMIC : AM-1 AG-102 AG-101G MAALSS0034
Frequency range 60 – 3000 MHz
Gain 10 – 15 dB
Ouput P1dB from + 16 dBm to + 22 dBm (depending on model)
Output IP3 +39 dBm / +33 dBm (depending on model)
Noise Figure 1,6 – 2.6 dB

R.F. elettronica di Rota F. www.rfmicrowave.it [email protected] tel ++39.02.99 48 75 15 fax ++39.02.99 48 92 76

 M.M.I.C. , Wide Band Amplifiers 6

medium power broadband MMICs and Modules

The table indicates the continuous output power (P1dB), expressed in dBm and in mW, and the frequency range

From the diagram it is possible to get the device number, below the comparison chart “NUMBER = MMIC“
1 = CGY 21 over 50 MHz + GPA 505 dc - 500 MHz ( max 1 GHz ) ---- 2 = ERA 5 up to 5.5 GHz + VNA 25 up to 2.5 GHz
3 = SNA 676 ---- 4 = RF 2145 ---- 5 = LMX 2119M ---- 6 = PM 2107 ---- 7 = MAAMSS0049 ---- 8 = MAV 11
9 = MGA 83563 ---- 10 = GPD 405 ---- 11 = BGD 802 # ---- 12 = MHW 9242 # ---- 14 = CGY 52
# they are power modules, the others are MMICs listed in this section

R.F. elettronica di Rota F. www.rfmicrowave.it [email protected] tel ++39.02.99 48 75 15 fax ++39.02.99 48 92 76

 M.M.I.C. Avantek GPD… UTO… and Motorola MWA… 7

high performances professional MMICs

These particular ICs are used in professional field, such as final stage or driver in laboratory RF signal generators,
military RF-VHF front-end receivers for example Watkins - Johnson, Rohde & Schwarz, A class amplifiers, and
laboratory and so on. They have better features than common MMICs, such as a low input-output VSWR, constant
phase throughout the whole band with a fair group delay, P1dB, IP3 and IP2 specified and guaranteed, etc... They are
typically used in wide band circuits and also where is the need of a very fast response as recovery time.
Some have the two dc-block capacitors already inside which greatly facilitates their use, other models have not the
capacitors inside (which have to be added externally) this is an advantage especially for use at low frequencies and / or
for applications that must be customized considering that they can virtually operate starting by dc.
gain - frequency reverse pwr.
NF P 1dB IP3 IP2
optimal max insul. supply
dB dB dB V cod.
dBm dBm dBm dB
MHz MHz MHz mA
20 15 3.9 4.5 TO39 case with small heat sink
100 - 900 30 - 2000 100 - 900
+ 19 + 32
160 CGY 21 9 x 21 mm
15 12 4 2.5
0.1 - 400 01 - 850 0.1 - 400
-2 + 12 + 14
10 GPD 110 group delay 0.3 nS

15 12 4 - 4.5
-2 + 10 > 20
15 GPD 401 low noise RX stage or driver
5 - 400 3 - 800 5 - 400 10 GPD 461 #
14 12 5.5 - 6
+7 + 19 + 25 > 20
15 GDP 402 intermediate stage
5 - 400 - 800 5 - 400 24 GPD 462 #
15 13 5.5 +35 / 15
10 - 400 - 900 5 - 400
+ 23
+30
+ 34 > 20
90 GPD 405 high power with still fair NF
group delay < 0.6 ns
8 3
dc - 1000
6.7 +11.5 + 17 + 27
30 MWA 320 # Imd - 58dB out 1 mW,
In+Out VSWR typ. 1.5:1
group delay < 0.6 ns
6.2 4-5
dc - 1000
9 +15.2 + 25 +31
60-80 MWA 330 # Imd - 62dB out 5 mW,
In+Out VSWR typ. 1.5:1
10.5 8.5 2-3 15
10 - 1000 - 1300 10 - 1000
+8 + 20 + 28 16 - 17
25 UTO 1043R High Reliability version
10 9.5 4.5 15
500 - 2000 400 - 2100 500-2000
+ 21 + 33 16 - 17
100 UTO 2013 typical group delay 0.5 nS

NOTE #
MMICs with dc-block capacitors already inside MMICs without dc-block capacitors already inside
(to add externally)
CGY 21
GPD 110
GPD 461
GPD 401
GPD 462
GPD 402
MWA 320
GPD 405
MWA 330
UTO 1043R
UTO 2013

R.F. elettronica di Rota F. www.rfmicrowave.it [email protected] tel ++39.02.99 48 75 15 fax ++39.02.99 48 92 76