2N3055(NPN)

SEMICONDUCTOR
RoHS
MJ2955(PNP) RoHS
Nell High Power Products
Complementary Silicon power transistors
(15A / 60V / 115W)

26.00 Max. 13.10 Max. 8.60

10.90 1.60

TAB

Φ1.00

Φ20.00 Max.
1

30.00
38.50
2 1 2

16.85
TO-3
FEATURES 2- Φ 4.0 Thru.
Designed for general designed for general-purpose
switching and amplifier applications.
DC current gain-hFE = 20-70 @ lC = 4 Adc All dimensions in millimeters
Collector-Emitter saturation voltage-
VCE(sat) = 1.1 Vdc (Max) @ lC = 4 Adc INTERNAL SCHEMATIC DIAGRAM
Excellent safe operating area

DESCRIPTION C (TAB) C (TAB)

The 2N3055 is a silicon epitaxial-base planar NPN (1) (1)

transistor mounted in JEDEC TO-3 metal case. B B

lt is intended for power switching circuits, series (2) (2)

and shunt regulators, output stages and fidelity E E
amplifiers.
2N3055(NPN) MJ2955(PNP)
The complementary PNP type is MJ2955.

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector to base voltage (I E = 0) 100

V CER Collector to emitter voltage (R BE = 100Ω) 70

V
V CEO Collector to emitter voltage (I B = 0) 60

V EBO Emitter to base voltage 7

IC Collector current 15
A
IB Base current 7

Total power dissipation T C = 25°C 115 W

PD
Derate above 25ºC 0.657 W/ºC

Tj Junction temperature 200

ºC
T stg Storage temperature -65 to 200
*For PNP types voltage and current values are negative.

THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER VALUE UNIT

Rth(j-c) Thermal resistance, junction to case 1.50 ºC/W

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 2N3055(NPN)
SEMICONDUCTOR
RoHS
MJ2955(PNP) RoHS
Nell High Power Products

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER CONDITIONS MIN MAX
V CE = 100V, V BE = -1.5V 1.0
ICEX Collector cutoff current mA
V CE = 100V, V BE = -1.5V, T C = 150°C 5.0

ICEO Collector cutoff current V CE = 30V, l B = 0 0.7

mA
I EBO Emitter cutoff current V EBO = 7V, l C = 0 5.0

V CEO (SUS) * Collector to emitter sustaining voltage l C = 200mA, l B = 0 60

V CER(SUS) * Collector to emitter sustaining voltage l C = 200mA, R BE = 100Ω 70

V
V CBO Collector to base voltage lE = 0 100

V EBO Emitter to base voltage lC = 0 7

l C = 4A , V CE = 4V 20 70
h FE Forward current transfer ratio (DC current gain)
l C = 10A , V CE = 4V 5

l C = 4A, l B = 400mA 1.1

V CE(sat) * Collector to emitter saturation voltage V
l C = 10A, l B = 3.3A 3.0

V BE(on) * Base to emitter on voltage V CE = 4V 1.5

fT Transition frequency l C = 0.5A, V CE = 10V, f = 1.0MH Z 2.5 MH Z

Second breakdown collector current with base

l s/b * V CE = 40V, t = 1.0s 2.87 A
forward baised

*Pulsed : Pulse duration = 300 µs, duty cycle 1.5%.

*For PNP types voltage and current values are negative.

Fig.1 Power derating

160

140
P D , Power dissipation, (W)

120

100

80

60

40

20

0
0 25 50 75 100 125 150 175 200

T C , Case temperature (°C)

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 2N3055(NPN)
SEMICONDUCTOR
RoHS
MJ2955(PNP) RoHS
Nell High Power Products

Fig.2 Active region safe operating area

2N3055, MJ2955
20
50µs
10 dc There are two limitations on the power handling ability of a
l C , Collector current, (A)

1ms
transistor: average junction temperature and second breakdown.
6 Safe operating area curves indicate l C -V CE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
4 must not be subjected to greater dissipation than the curves
500µs indicate.
2 250µs
The data of fig.2 is based on T C = 25°C; T J(pk) is variable
depending on power level. Second breakdown pulse limits are
1 valid for duty cycles to 10% but must be derated for temperature
according to fig.1
0.6 Bonding wire limit
0.4 Thermally limited @ T C = 25°C (single pulse)
Second breakdown limit
0.2
6 10 20 40 60

V CE , Collector-emitter voltage (V)

Fig.3 DC Current gain

2N3055(NPN) MJ2955(PNP)
500 200
V CE = 4.0V V CE = 4.0V
300 T J = 150°C
T J = 150°C
200 25°C
h FE , DC current gain

h FE , DC current gain

100
25°C
100 70 -55°C
-55°C
70
50
50

30 30
20
20
10
7.0
5.0 10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

l C , Collector current (A) l C , Collector current (A)

Fig.4 Collector saturation region

2N3055(NPN) MJ2955(PNP)
2.0 2.0
V CE , Collector-emitter voltage (V)

V CE , Collector-emitter voltage (V)

T J = 25°C T J = 25°C

1.6 1.6
l C = 1.0A 4.0A 8.0A l C = 1.0A 4.0A 8.0A

1.2 1.2

0.8 0.8

0.4 0.4

0 0
5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000

l B , Base current (mA) l B , Base current (mA)

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 2N3055(NPN)
SEMICONDUCTOR
RoHS
MJ2955(PNP) RoHS
Nell High Power Products

Fig.5 “On” Voltages

2N3055(NPN) MJ2955(PNP)
1.4 2.0
T J = 25°C T J = 25°C
1.2
1.6
1.0

Voltage, (V)
Voltage, (V)

1.2 V BE(Sat) @ l C /l B = 10
0.8 V BE(Sat) @ l C /l B = 10

V BE @ V CE = 4.0V
0.6 V BE @ V CE = 4.0V
0.8

0.4
0.4
0.2 V CE(Sat) @ l C /l B = 10
V CE(Sat) @ l C /l B = 10

0 0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

l C , Collector current (A) l C , Collector current (A)

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