F2MC-16LX

Flash Programming Manual

Doc. # 002-06656 Rev. *A

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F2MC-16LX Flash Programming Manual, Doc. # 002-06656 Rev. *A 2

 Contents

1. Flash Memory 5
1.1 Overview......................................................................................................................6
1.1.1 Overview ..........................................................................................................6
1.1.2 Features ...........................................................................................................6
1.1.3 Size and Products of Flash Memory ................................................................7
1.1.4 Block Diagram..................................................................................................7
1.2 Address Map and Sector Configuration .......................................................................8
1.2.1 Flash Memory Area..........................................................................................8
1.2.2 Sector Configuration ........................................................................................8
1.3 Registers.....................................................................................................................9
1.3.1 Flash Memory Registers ..................................................................................9
1.3.2 Flash Memory Control Status Register (FMCS)...............................................9
1.3.3 Flash Memory Write Control Register (FWR1/FWR0) ...................................11
1.4 Setting for Data Write/Erase Operations ...................................................................13
1.4.1 Enabling/Disabling Write Access to Sectors ..................................................13
1.4.2 Enabling Write Access to Flash Memory .......................................................14
1.4.3 Performing Data Write/Erase Operation for the Flash Memory......................14
1.5 Automatic Algorithm...................................................................................................14
1.5.1 Automatic Algorithm .......................................................................................14
1.5.2 Command Sequence .....................................................................................15
1.5.3 Reset Command ............................................................................................16
1.5.4 Data Write Command.....................................................................................17
1.5.5 Chip Erase Command....................................................................................18
1.5.6 Sector Erase Command.................................................................................19
1.5.7 Sector Erase Suspend Command..................................................................20
1.5.8 Sector Erase Resume Command ..................................................................21
1.6 Hardware Sequence Flag ..........................................................................................22
1.6.1 Hardware Sequence Flag ..............................................................................22
1.6.2 Data Polling Flag (DQ7) .................................................................................24
1.6.3 Toggle Bit Flag (DQ6).....................................................................................28
1.6.4 Timing Limit Exceeded Flag (DQ5) ................................................................31
1.6.5 Sector Erase Timer Flag (DQ3)......................................................................32
1.7 Explanation of Operations .........................................................................................36
1.7.1 Read Operation..............................................................................................36
1.7.2 Resetting Flash Memory ................................................................................36
1.7.3 Writing Data ...................................................................................................36
1.7.4 Chip Erase Operation.....................................................................................38
1.7.5 Chip Erase Operation.....................................................................................38
1.7.6 Sector Erase Operation..................................................................................39
1.7.7 Sector Erase Suspend Operation ..................................................................42
1.7.8 Sector Erase Resume Operation ...................................................................44
1.8 Flash Memory Mode ..................................................................................................45
1.8.1 Setting Flash Memory Mode ..........................................................................45

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 Contents

1.9 Flash Security ............................................................................................................46

1.9.1 Flash Security ................................................................................................46
1.9.2 Canceling Flash Security ...............................................................................46
1.10 Notes .........................................................................................................................47
1.10.1 Notes..............................................................................................................47

Index 49

3. Major changes 51

Revision History 52

F2MC-16LX Flash Programming Manual, Doc. # 002-06656 Rev. *A 4

 1. Flash Memory

This chapter explains the flash memory.

1.1 Overview
1.2 Address Map and Sector Configuration
1.3 Registers
1.4 Setting for Data Write/Erase Operations
1.5 Automatic Algorithm
1.6 Hardware Sequence Flag
1.7 Explanation of Operations
1.8 Flash Memory Mode
1.9 Flash Security
1.10 Notes

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 Flash Memory

1.1 Overview
Flash memory is rewritable built-in program memory.

1.1.1 Overview
Flash memory operates as built-in program memory. It allows data to be read by word and byte. As
instruction codes can be fetched from the flash memory, the CPU can execute programs on the flash
memory.
The flash memory is rewritable. Its data-write function enables data to be written by word. The data
written through the data-write operation is saved to the flash memory and maintained even after the
power is switched off. The flash memory is divided into sectors and this allows data to be erased by
sector. It can also erase data from all of the sectors at once.
There are the following three methods to perform Data Write/Erase operation for flash memory.
■ Execution of a program
■ Serial programmer (flash memory writer)
■ Parallel programmer (flash memory writer)
The flash security function can apply security to protect flash memory. When the security is applied,
data cannot be read from, written to, or erased from the flash memory via external pins.

1.1.2 Features
Features of the flash memory are as follows:
■ Data Write/Erase is possible according to the program execution of CPU.
■ Commands can be performed automatically using automatic algorithms (equivalent to Embedded
Algorithm).
■ The hardware sequence flag detects the execution status of the automatic algorithm.
■ Data can be written by word (16 bits).
■ Data can be erased by sector or all sectors at once (chip erase).
■ In flash memory mode, a parallel flash programmer can perform Data Write/Erase through 
external pins.
■ Number of times Data Write/Erase operation (min.): 10,000 times
■ Read cycle time (min.): 2 machine cycles

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 Flash Memory

1.1.3 Size and Products of Flash Memory

Table 1-1 shows the product lineup of the flash memory.
Table 1-1. Product Lineup of Flash Memory

Product MB90F931, MB90F931S

Flash memory size 128 Kbytes

Flash memory area FE:0000H to FF:FFFFH

8 Kbytes ´ 4 sectors
Sector configuration
48 Kbytes ´ 2 sectors

1.1.4 Block Diagram

Figure 1-1 shows the block diagram of the flash memory.
Figure 1-1. Block Diagram of Flash Memory
Flash memory
interface circuit Flash memory

BYTE BYTE
Port
CE CE
OE OE
WE WE

AQ0 to AQ18 AQ0 to AQ18

DQ0 to DQ15 DQ0 to DQ15

F2MC-16LX
bus INT RY/BY RY/BY
RESET
Write enable interrupt
signal (to CPU)
RY/BY
External reset signal
Write enable signal

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 Flash Memory

1.2 Address Map and Sector Configuration

The flash memory area is divided into sectors.

1.2.1 Flash Memory Area

Figure 1-2 shows the address map of the flash memory area.
Figure 1-2. Address Map of Flash Memory Area

FF:FFFFH
Flash Memory
(128 Kbytes)

FE:0000H

00:0000H

1.2.2 Sector Configuration

Table 1-2 shows the sector configuration of the flash memory.

Table 1-2. Sector Configuration of Flash memory

Address Range Bank Sector

FF:FFFFH to FF:E000H SA5 (8 Kytes)

FF:DFFFH to FF:C000H FFH SA4 (8 Kytes)

FF:BFFFH to FF:0000H SA3 (48 Kytes)

FE:FFFFH to FE:4000H SA2 (48 Kytes)

FE:3FFFH to FE:2000H FEH SA1 (8 Kytes)

FE:1FFFH to FE:0000H SA0 (8 Kytes)

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 Flash Memory

1.3 Registers
The flash memory has registers that control Data Write/Erase operations.

1.3.1 Flash Memory Registers

Table 1-3 shows the registers of the flash memory interface.

Table 1-3. Registers of Flash Memory Interface

Mnemonic Register Name Address Size

FMCS Flash Memory Control Status Register 00:00AEH Byte

FWR0 00:79A6H Byte

Flash Memory Write Control Register
FWR1 00:79A7H Byte

1.3.2 Flash Memory Control Status Register (FMCS)

This register indicates the status of and controls the flash memory.

1.3.2.1 Flash Memory Control Status Register (FMCS)

Table 1-4 shows the Bit configuration of Flash Memory Control Status Register (FMCS).

Table 1-4. Bit configuration of Flash Memory Control Status Register (FMCS)
bit 7 6 5 4 3 2 1 0

FMCS INTE RDYINT WE RDY Reserved Reserved Reserved Reserved

Bit
R/W R(1),W R/W R,WX R/W0 R/W0 R/W0 R/W0
attribute
Initial
0 0 0 X 0 0 0 0
value
R/W: Readable/writable
R(1),W:Readable and writable
R,WX: Read only
R/W0: Always write "0"
X: Undefined

Use a byte access to access the flash memory control status register (FMCS).
[bit7] INTE : Flash memory interrupt enable bit
This bit enables an interrupt request upon completion of the automatic algorithm of Data Write/Erase
operation. An interrupt request occurs, if the RDYINT bit is set to "1" when the INTE bit is "1". The
initial value of the INTE bit is "0". For this series, always write "0" to this bit.

INTE Flash memory interrupt enable bit

0 Disables interrupt on completion of Data Write/Erase operation

1 Enables interrupt on completion of Data Write/Erase operation

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 Flash Memory

[bit6] RDYINT : Flash memory interrupt request flag

This bit is an interrupt request flag set upon completion of the automatic algorithm of Data Write/
Erase operation. When data write/erase operation is completed, the RDYINT bit becomes "1". An
interrupt request occurs, if the RDYINT bit is set to "1" when the INTE bit is "1".
Writing "0" to the RDYINT bit clears the bit. Writing "1" to the RDYINT bit is ignored. Using a read
modify write (RMW) instruction, the read value is "1". The initial value of the RDYINT bit is "0".

Flash memory interrupt request flag

RDYINT
Read operation Write operation

Performing the data write/erase

0 Clears the RDYINT bit
operation or not activated

Data Write/Erase operation has

1 No effect
been completed

[bit5] WE : Flash memory write enable bit

This bit enables write access to the flash memory area. Setting the WE bit to "1" enables write
access and allows the command for data write/erase operation of the flash memory to be issued.
Setting the WE bit to "0" ignores a write access to the flash memory area. The initial value of the WE
bit is "0".

WE Flash memory write enable bit

0 Disables write access

1 Enables write access

[bit4] RDY : Data Write/Erase status bit

This bit indicates the status of the execution of the automatic algorithm of Data Write/Erase opera-
tion. The RDY bit detects the status of the flash memory by hardware. The RDY bit is a read-only bit.
Writing does not affect the value of the RDY bit. The initial value of the RDY bit is undefined.

RDY Data Write/Erase status bit

0 Performing the data write/erase operation (busy status)

The data write/erase operation has been completed or not activated (ready
1
status)

[bit3 to bit0] Reserved

These bits are reserved bits. Always write "0" to these bits. The read value is "0", the value written to
them. The initial value is "0".

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 Flash Memory

1.3.3 Flash Memory Write Control Register (FWR1/FWR0)

This register enables/disables write access to each sector of the flash memory.

1.3.3.1 Flash Memory Write Control Register (FWR1/FWR0)

Figure 1-3 shows the bit configuration of the flash memory write control register (FWR1/FWR0).
Figure 1-3. Bit configuration of Flash Memory Write Control Register (FWR1/FWR0)
bit 15 14 13 12 11 10 9 8

FWR1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved

Bit
RX,W0 RX,W0 RX,W0 RX,W0 RX,W0 RX,W0 RX,W0 RX,W0
attribute
Initial
X X X X X X X X
value

bit 7 6 5 4 3 2 1 0

FWR0 Reserved Reserved SA5E SA4E SA3E SA2E SA1E SA0E

Bit
RX,W0 RX,W0 R,W R,W R,W R,W R,W R,W
attribute
Initial
X X 0 0 0 0 0 0
value

R,W: Readable and writable

RX,W0: Always write "0"
X: Undefined

[bit15 to bit6] Reserved

These bits are reserved bits. Always write "0" to these bits. The read value is undefined.
[bit5 to bit0] SA5E to SA0E : Accidental write prevention setting bits
These bits set the accidental write prevention for corresponding sectors of the flash memory. Writing
"1" to the SAxE bit allows write access to the corresponding sector. Writing "0" to the SAxE bit
enables write-protect function and disables write access to the corresponding sector. The initial
value of the SAxE bit is "0".

SAxE Accidental write prevention setting bit

0 (after reset) Disables write access

1 Enables write access

0 Prevents accidental write

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 Flash Memory

Table 1-5 shows the sectors corresponding to accidental write prevention setting bits (FWR0:SAxE).

Table 1-5. Sectors Corresponding to Accidental Write Prevention Setting Bits (FWR0:SAxE)
Bit Bit Name Corresponding sector Remarks
7 Reserved ¾
Set these bits to "0".
6 Reserved ¾
5 SA5E SA5
4 SA4E SA4
3 SA3E SA3
2 SA2E SA2
1 SA1E SA1
0 SA0E SA0

A reset initializes the accidental write prevention setting bit (FWR0:SAxE) to "0". After reset, the write
disabled status is maintained until the first write access to the flash memory write control register
(FWR0:FWRx). When "1" is written at the first write access after the reset, the write-enabled status is
set. Writing "0" to the bit in the write-enabled status changes it to the write-protected status. When
"0" is written at the first write access after the reset, the write-protected status is set. Even if "1" is
written to the bit in the write-protected status, the accidental write prevention setting bit is not set to
"1" and remains in the write-protected status. Figure 1-4 shows the state transition of accidental
write prevention setting bit (FWR0:SAxE).
Figure 1-4. State Transition of Accidental Write Prevention Setting Bit (FWR0:SAxE)

"1" write
"1" write

write disabled write enabled

"0" "1"

Reset

Reset "0" write "0" write

Accidental
write prevented
"0"

"0" write
"1" write

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 Flash Memory

1.4 Setting for Data Write/Erase Operations

This section explains the setting methods for Data Write/Erase operation of the flash memory.

1.4.1 Enabling/Disabling Write Access to Sectors

Before performing Data Write/Erase operation to the flash memory, set the accidental write preven-
tion setting bit (FWR0:SAxE). Write access is allowed to the sectors to which both the flash memory
write enable bit (FMCS:WE) and the corresponding accidental write prevention setting bit
(FWR0:SAxE) have been set to enable write operation. Table 1-6 shows the relationship between
the write enable bit (FMCS:WE) and the accidental write prevention setting bit (FWR0:SAxE).

Table 1-6. Relationship between Write Enable Bit (FMCS:WE) and 

Accidental Write Prevention Setting Bit (FWR0:SAxE)

Accidental write prevention setting

Write enable bit Enabling/disabling of
bit
(FMCS:WE) sector write operation
(FWR0:SAxE)

0 0

0 1 Disables write access

1 0

1 1 Enables write access

The accidental write prevention setting bit (FWR0:SAxE) can be set to the write-enabled status by
only the first register writing after a reset. Set it to the write-enabled status only for the sectors which
is to be performed Data Write/Erase operation. Figure 1-5 shows a setting example of the accidental
write prevention setting bit (FWR0:SAxE).
Figure 1-5. Setting Example of the Accidental Write Prevention Setting Bit (FWR0:SAxE)

Writing to Writing to
Initialization register register Initialization

RST

Write Accidental
Write enabled write Write disabled
disabled prevented

SA0E
Write
disabled Accidental write prevented Write disabled

SA1E

Write
disabled Accidental write prevented Write disabled

SA2E
Write
disabled Write enabled Write disabled

SA3E

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 Flash Memory

1.4.2 Enabling Write Access to Flash Memory

Set the flash memory write enable bit (FMCS:WE) to enable write access (FMCS:WE="1"), immedi-
ately before Data Write/Erase operations. After completing the data write/erase operation, set the bit
to disable write access (FMCS:WE="0").
When the automatic algorithm of Data Write /erase operation is activated by issuing a command to
the flash memory, no instruction or data can be read from the flash memory. When performing a
Data Write/Erase operation, disable all interrupts. Because it becomes impossible to read the inter-
rupt vector area while executing an automatic algorithm, the interrupt cannot be used.

1.4.3 Performing Data Write/Erase Operation for the Flash Memory

It is necessary to perform Data Write/Erase operation of the Flash Memory via a program on RAM.
Copy to RAM a program that performs Data Write/Erase operation. Then, execute the program on
RAM to perform Data Write/Erase operation.
Use the following procedure for performing Data Write/Erase operation for the Flash Memory.
1. Copy a program code to RAM.
2. Disable all interrupts
3. Branch to the copied program on RAM.
4. Set the flash memory to enable write access (FMCS:WE="1").
5. Perform Data Write/Erase operations to the flash memory.
6. Set the flash memory to disable write access (FMCS:WE="0").
7. Return to the program on the flash memory.
8. Enable interrupt.

1.5 Automatic Algorithm

On the flash memory, Data Write/Erase operation is performed using an automatic algorithm.

1.5.1 Automatic Algorithm

Issue a command by writing command sequence to the flash memory. Once the command is issued,
the automatic algorithm is activated. The automatic algorithm completes automatically after perform-
ing Data Write/Erase operation, and then the flash memory returns to the read/reset state. The flash
memory has the following commands:
1. Reset command
2. Data write command
3. Chip erase command
4. Sector erase command
5. Sector erase suspend command
6. Sector erase resume command

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 Flash Memory

1.5.2 Command Sequence

Write the command sequence continuously in the flash memory area. If data other than the com-
mand sequence is written to the flash memory area in the middle of the command sequence, the
command will not be issued correctly. The command sequence has meanings in both the address
and data. Write the command sequence to write enabled sectors of the flash memory.
Set the flash memory to enable write access (FMCS:WE="1"), then write the command sequence by
word access. The upper byte of data, except for writing data (PD) by the data write command, is
ignored. For example, apply an upper byte to the same value as lower byte (AAH) like AAAAH.
Write the command sequence correctly. If data is written to an improper address or written in an
incorrect order, the flash memory returns to the read/reset state.
Table 1-7 shows the command sequence of the flash memory.

Table 1-7. Command Sequence of Flash Memory

Second Third Fourth Sixth

Command First writing Fifth writing
writing writing writing writing

Address XXXXXeH - - - - -
Reset
Data F0F0H - - - - -

Address XXXAAAH XXX554H XXXAAAH - - -

Reset
Data AAAAH 5555H F0F0H - - -

Address XXXAAAH XXX554H XXXAAAH PA - -

Data write
Data AAAAH 5555H A0A0H PD - -

Address XXXAAAH XXX554H XXXAAAH XXXAAAH XXX554H XXXAAAH

Chip erase
Data AAAAH 5555H 8080H AAAAH 5555H 1010H

Address XXXAAAH XXX554H XXXAAAH XXXAAAH XXX554H SA

Sector
erase AAAAH 5555H 8080H AAAAH 5555H 3030H
Data

Sector Address XXXXXeH - - - - -

erase
Suspend Data B0B0H - - - - -

Sector Address XXXXXeH - - - - -

erase 
Resume Data 3030H - - - - -

PA : Data writing address (word address)

PD : Write data (word data)
SA : Erase sector address
e : Even hexadecimal number (0, 2, 4, 6, 8, A, C, E)

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 Flash Memory

1.5.3 Reset Command

The flash memory can be placed in read/reset state by issuing reset command.

1.5.3.1 Reset Command

Table 1-8 and Table 1-9 show the command sequence of the reset command. The reset command
has two patterns of the command sequence, both have the same function.

Table 1-8. Command Sequence 1 of Reset Command

Address
Data
Formula Value

First writing (adrs & FFFFFEH) XXXXXeH F0F0H

adrs: Address in write enabled sectors of the flash memory area

e : Even hexadecimal number (0, 2, 4, 6, 8, A, C, E)

Table 1-9. Command Sequence 2 of Reset Command

Address
Data
Formula Value

First writing (adrs & FFF000H) + AAAH XXXAAAH AAAAH

Second writing (adrs & FFF000H) + 554H XXX554H 5555H

Third writing (adrs & FFFF000H) + AAAH XXXAAAH F0F0H

adrs: Address in write enabled sectors of the flash memory area

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 Flash Memory

1.5.4 Data Write Command

The word data can be written in the flash memory by issuing the data write command.

1.5.4.1 Data Write Command

Table 1-10 shows the command sequence of the data write command.

Table 1-10. Command Sequence of Data Write Command

Address
Data
Formula Value

First writing (adrs & FFF000H) + AAAH XXXAAAH AAAAH

Second writing (adrs & FFF000H) + 554H XXX554H 5555H

Third writing (adrs & FFF000H) + AAAH XXXAAAH A0A0H

Fourth writing (adrs & FFFFFEH) PA PD

adrs: Address in write enabled sectors of the flash memory area

The flash memory starts the automatic algorithm for data-write operation when the address and data
of the fourth writing of the command sequence is written. During the execution of the automatic 
algorithm for data-write operation, only the reset command can be issued. And any write access to
the flash memory (issuing the command) other than the reset command is ignored.

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 Flash Memory

1.5.5 Chip Erase Command

The contents of all sectors of the flash memory can be erased by issuing the chip erase command.

1.5.5.1 Chip Erase Command

Table 1-11 shows the command sequence of the chip erase command.

Table 1-11. Command Sequence of Chip Erase Command

Address
Data
Formula Value

First writing (adrs & FFF000H) + AAAH XXXAAAH AAAAH

Second writing (adrs & FFF000H) + 554H XXX554H 5555H

Third writing (adrs & FFF000H) + AAAH XXXAAAH 8080H

Fourth writing (adrs & FFF000H) + AAAH XXXAAAH AAAAH

Fifth writing (adrs & FFF000H) + 554H XXX554H 5555H

Sixth writing (adrs & FFF000H) + AAAH XXXAAAH 1010H

adrs: Address in write enabled sectors of the flash memory area

The flash memory starts the automatic algorithm for chip erase operations when the sixth writing of
the command sequence are written. During the execution of the automatic algorithm for chip erase
operations, only the reset command can be issued. And any write access to the flash memory
(issuing the command) other than the reset command is ignored.

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 Flash Memory

1.5.6 Sector Erase Command

The contents of each sector of the flash memory can be erased by issuing the sector erase 
command.

1.5.6.1 Sector Erase Command

Table 1-12 shows the command sequence of the sector erase command.

Table 1-12. Command Sequence of Sector Erase Command

Address
Data
Formula Value

First writing (adrs & FFF000H) + AAAH XXXAAAH AAAAH

Second writing (adrs & FFF000H) + 554H XXX554H 5555H

Third writing (adrs & FFF000H) + AAAH XXXAAAH 8080H

Fourth writing (adrs & FFF000H) + AAAH XXXAAAH AAAAH

Fifth writing (adrs & FFF000H) + 554H XXX554H 5555H

Sixth writing (adrs & FFFFFEH) SA 3030H

adrs: Address in write enabled sectors of the flash memory area

When the command sequence is written, the flash memory starts the automatic algorithm for sector
erase operation.
The sixth writing of the command sequence is a sector erase code. Writing the sector erase code of
the command sequence starts a sector erase time-out period. The next sector erase code can be
written during this sector erase time-out period. Multiple target sectors can be specified for sector
erase operation by writing the sector erase code more than once. Table 1-13 shows the sector erase
code.

Table 1-13. Sector Erase Code

Address
Data
Formula Value

After seventh writing (adrs & FFFFFEH) SA 3030H

adrs: Address in write enabled sectors of the flash memory area

SA : Erase sector address

During the execution of the automatic algorithm for sector erase operations, only the sector erase
suspend command and the reset command can be issued.

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 Flash Memory

1.5.7 Sector Erase Suspend Command

The sector erase operation can be suspended temporarily by issuing sector erase suspend com-
mand.

1.5.7.1 Sector Erase Suspend Command

Table 1-14 shows the command sequence of the sector erase suspend command.

Table 1-14. Command Sequence of Sector Erase Suspend Command

Address
Data
Formula Value

First writing (adrs & FFFFFEH) XXXXXeH B0B0H

adrs: Address in write enabled sectors of the flash memory area

e : Even hexadecimal number (0, 2, 4, 6, 8, A, C, E)

If the sector erase suspend command is issued during the execution of the automatic algorithm for
sector erase operations, the flash memory temporarily suspends the sector erase operation. During
the suspension of the sector erase operation, data can be read from sectors other than the sector
that was specified for the erase target by preceding sector erase command. Even if the sector erase
suspend command is reissued during the suspension of the sector erase operation, that command is
ignored.

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 Flash Memory

1.5.8 Sector Erase Resume Command

The suspended sector erase operation can be resumed by issuing sector erase resume command.

1.5.8.1 Sector Erase Resume Command

Table 1-15 shows the command sequence of the sector erase resume command.

Table 1-15. Command Sequence of Sector Erase Resume Command

Address
Data
Formula Value

First writing (adrs & FFFFFEH) XXXXXeH 3030H

adrs: Address in write enabled sectors of the flash memory area

e : Even hexadecimal number (0, 2, 4, 6, 8, A, C, E)

When the sector erase resume command is issued during the suspension of a sector erase opera-
tion, the flash memory resumes the sector erase operation. Even if the sector erase resume 
command is issued at a time other than during the suspension of a sector erase operation, that com-
mand is ignored.

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 Flash Memory

1.6 Hardware Sequence Flag

During the execution of the automatic algorithm for the Data Write/Erase operation, data reading
from the flash memory area is the hardware sequence flag. The hardware sequence flag indicates
the progress/completion of the automatic algorithm.

1.6.1 Hardware Sequence Flag

The hardware sequence flag can be read by reading from the flash memory area after the automatic
algorithm is activated.
The hardware sequence flag consists of the following bits:
■ Data polling flag (DQ7)
■ Toggle bit flag (DQ6)
■ Timing limit exceeded flag (DQ5)
■ Sector erase timer flag (DQ3)
Read the hardware sequence flag by word assess or byte access. When it is read by word access,
the lower byte represents the hardware sequence flag. In case of byte access, read it from the 
even-numbered address. Figure 1-6 shows the position of the hardware sequence flag.
Figure 1-6. Position of Hardware Sequence Flag

bit 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

Word access (indefinite) Hardware sequence flag

bit 7 6 5 4 3 2 1 0

Byte access (even number address) Hardware sequence flag

Figure 1-7 shows the bit configuration of hardware sequence flag. The read value of undefined bits
of the hardware sequence flag is indeterminate.
Figure 1-7. Bit Configuration of Hardware Sequence Flag
bit 7 6 5 4 3 2 1 0
Hardware
Sequence DQ7 DQ6 DQ5 Undefined DQ3 Undefined Undefined Undefined
Flag
R R R R R R R R

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 Flash Memory

Table 1-16 shows the list of states of hardware sequence flag. "End of execution (read/reset state)"
in Table 1-16 is not a result of the hardware sequence flag but a result of a usual read. To make 
easily to compare, the item is shown in the table.

Table 1-16. List of States of Hardware Sequence Flag

Execution status of automatic algorithm DQ7 DQ6 DQ5 DQ3

End of execution (read/reset state) DATA[7] DATA[6] DATA[5] DATA[3]

Data write PD[7] Toggle 0 0

Chip erase 0 Toggle 0 1

Sector Timeout period 1 Toggle 0 0

erase Erasing 0 Toggle 0 1
Execution
in progress Read
(sector to be 1 1 0 0
Sector erased)
erase
suspend Read
(sectors not to be DATA[7] DATA[6] DATA[5] DATA[3]
erased)

Data write PD[7] Toggle 1 0

Timing limit
Chip erase 0 Toggle 1 1
exceeded
Sector erase 0 Toggle 1 1

PD[7] : Value reversed from bit 7 of writing data specified by Data write command
DATA : Data written in the read address

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 Flash Memory

1.6.2 Data Polling Flag (DQ7)

The data polling flag (DQ7) indicates that the automatic algorithm is currently being executed.

1.6.2.1 Data Write Operation

The data polling flag (DQ7) can be read by making read access to the flash memory area during the
execution of the automatic algorithm for writing data. Figure 1-8 shows the state transition of the data
polling flag (DQ7) at the data write.
Figure 1-8. State Transition of Data Polling Flag (DQ7) at Data Write

DATA WRITE
COMMAND

READ/RESET STATE DATA WRITE

DQ7=DATA[7] DQ7=PD[7]

NORMAL END

TIMING LIMIT
EXCESS

RESET
COMMAND
ABNORMAL STATE
DQ7=PD[7]

When the data polling flag (DQ7) is read during the execution of the automatic algorithm, its read
value is the value reversed from bit 7 of the write data (PD). The read address is any address in the
flash memory area. The write data (PD) is the data specified by the data write command.
When the flag is read after the completion of the automatic algorithm, the read value is bit 7 of the
data at that address. The flash memory returns to the read/reset state. The data written in the flash
memory is read as normal read data.
Read the address (PA) specified by the data write command as the data polling flag (DQ7). During
the execution of the automatic algorithm, it indicates the value reversed from bit 7 of the write data
(PD). After the completion of the automatic algorithm, it indicates the value of bit 7 of the write data
(PD). Although the written data (DATA) is read after the completion of the automatic algorithm, that
value is actually the same as the write data (PD).

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 Flash Memory

1.6.2.2 Chip Erase Operation

The data polling flag (DQ7) can be read by making read access to the flash memory area during the
execution of the automatic algorithm for chip erase operations. Figure 1-9 shows the state transition
of the data polling flag (DQ7) at the chip erase.
Figure 1-9. State Transition of Data Polling Flag (DQ7) at Chip Erase

CHIP ERASE
COMMAND

READ/RESET STATE CHIP ERASE

DQ7=DATA[7] DQ7= "0"

NORMAL END

TIMING LIMIT
EXCESS

RESET
COMMAND

ABNORMAL STATE
DQ7= "0"

When the data polling flag (DQ7) is read during the execution of the automatic algorithm, its read
value is "0". The read address is any address in the flash memory area.
When the flag is read after the completion of the automatic algorithm, the read value is "1". The flash
memory returns to the read/reset state. After the completion of the automatic algorithm, "1" is 
actually read as the erased data from the flash memory.

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 Flash Memory

1.6.2.3 Sector Erase Operation

The data polling flag (DQ7) can be read by making read access to the sector to be erased in the
flash memory area during the execution of the automatic algorithm for sector erase operations.
Figure 1-10 shows the state transition of the data polling flag (DQ7) at the sector erase.
Figure 1-10. State Transition of Data Polling Flag (DQ7) at Sector Erase

SECTOR ERASE
COMMAND

SECTOR ERASE
READ/RESET STATE
TIMEOUT PERIOD
DQ7=DATA[7]
DQ7= "1"

RESET TIMEOUT PERIOD

COMMAND NORMAL END EXCESS

SECTOR ERASE
ABNORMAL STATE
PERIOD
DQ7= "0"
DQ7= "0"

TIMING LIMIT
EXCESS

The data polling flag (DQ7) can be read by making read access to the sector to be erased during the
execution of the automatic algorithm. In this series, the read value of the data polling flag (DQ7) is
set to "1" when the sector erase command is issued. Then, after the sector erase timeout period is
reached, the read value is changed to "0". Once the sector erase timeout period is reached, the read
value is "0" during the execution of the automatic algorithm.
When the flag is read after the completion of the automatic algorithm, the read value is "1". The flash
memory returns to the read/reset state. After the completion of the automatic algorithm, "1" is actu-
ally read as the erased data from the flash memory.

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 Flash Memory

1.6.2.4 Sector Erase Suspend Operation

The data polling flag (DQ7) can be read by making read access to the sector to be erased in the
flash memory area during the suspension of a sector erase operation. Figure 1-11 shows the state
transition of the data polling flag (DQ7) at the suspending sector erase.
Figure 1-11. State Transition of Data Polling Flag (DQ7) at Suspending Sector Erase

SECTOR ERASE
SUSPEND
COMMAND

SECTOR ERASE SUSPENDING

TIMEOUT PERIOD SECTOR ERASE
DQ7= 1 DQ7= "1"

SECTOR ERASE
SUSPEND
COMMAND

READ
SECTOR ERASE SECTOR ERASE (NOT ERASE
RESUME TARGET SECTOR)
DQ7= "0"
COMMAND
DQ7=DATA[7]

When the data polling flag (DQ7) is read during the suspension of a sector erase operation, its read
value is "1". The read address is the address of the sector to be erased in the flash memory area.
When the sector erase operation is resumed, the read value of the data polling flag (DQ7) is
changed to "0".
If a sector that is not to be erased is read during the suspension of a sector erase operation, the read
value is bit 7 of the data at that address. The data written in the flash memory is read as normal read
data.

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 Flash Memory

1.6.3 Toggle Bit Flag (DQ6)

The toggle bit flag (DQ6) indicates, through its toggle operation, that the automatic algorithm is cur-
rently being executed.

1.6.3.1 Data Write Operation

The toggle bit flag (DQ6) can be read by making read access to the flash memory area during the
execution of the automatic algorithm for data-write operation. Figure 1-12 shows the state transition
of the toggle bit flag (DQ6) at the data write.
Figure 1-12. State Transition of Toggle Bit Flag (DQ6) at Data Write

DATA WRITE
COMMAND

READ/RESET STATE DATA WRITE

DQ6=DATA[6] DQ6= TOGGLE

NORMAL END

TIMING LIMIT
EXCESS

RESET
COMMAND

ABNORMAL STATE
DQ6= TOGGLE

The toggle bit flag (DQ6) performs a toggle operation through which it indicates "1" and "0" alterna-
tively every time it is read during the execution of the automatic algorithm. The read address is any
address in the flash memory area.
When the flag is read after the completion of the automatic algorithm, its read value is bit 6 of the
data at that address. The flash memory returns to the read/reset state. The data written in the flash
memory is read as normal read data.

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 Flash Memory

1.6.3.2 Chipt Erase/Sector Erase Operations

The toggle bit flag (DQ6) can be read by making read access to the sector that is to be erased in the flash
memory area during the execution of the automatic algorithm for a chip erase or sector erase operation.
Figure 1-13 shows the state transition of the toggle bit flag (DQ6) at the chip erase/sector erase.
Figure 1-13. State Transition of Toggle Bit Flag (DQ6) at Chip Erase/Sector Erase

CHIP ERASE/
SECTOR ERASE
COMMAND

CHIP ERASE/
READ/RESET STATE
SECTOR ERASE
DQ6=DATA[6]
DQ6= TOGGLE

NORMAL END

TIMING LIMIT
EXCESS

RESET
COMMAND

ABNORMAL STATE
DQ6= TOGGLE

The toggle bit flag (DQ6) performs a toggle operation through which it indicates "1" and "0" alterna-
tively every time it is read during the execution of the automatic algorithm. The read address for the
chip erase operation is any address in the flash memory area. The read address for the sector erase
operation is the address of the sector to be erased in the flash memory area.
When the flag is read after the completion of the automatic algorithm, the read value is "1". The flash
memory returns to the read/reset state. After the completion of the automatic algorithm, "1" is actu-
ally read as the erased data from the flash memory.

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 Flash Memory

1.6.3.3 Sector Erase Suspend Operation

The toggle bit flag (DQ6) can be read by making read access to the sector that is to be erased in the
flash memory area during the suspension of a sector erase operation. Figure 1-14 shows the state
transition of the toggle bit flag (DQ6) at the suspending sector erase.
Figure 1-14. State Transition of Toggle Bit Flag (DQ6) at Suspending Sector Erase

SECTOR ERASE
SUSPEND
COMMAND

SUSPENDING
SECTOR ERASE
SECTOR ERASE
DQ6=TOGGLE
DQ6= "1"

SECTOR ERASE
RESUME
COMMAND

READ
(NOT ERASE
TARGET SECTOR)
DQ6=DATA[6]

When the toggle bit flag (DQ6) is read during the suspension of a sector erase operation, its read
value is "1". The read address is the address of the sector to be erased in the flash memory area.
When the sector erase operation is resumed, the read value of the toggle bit flag (DQ6) performs a
toggle operation.
When a sector that is not to be erased is read during the suspension of a sector erase operation, the
read value is bit 6 of the data at that address. The data written in the flash memory is read as normal
read data.

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 Flash Memory

1.6.4 Timing Limit Exceeded Flag (DQ5)

The timing limit exceeded flag (DQ5) indicates that the execution of the automatic algorithm has
exceeded the time specified within the flash memory.

1.6.4.1 Data Write/Chip Erase/Sector Erase Operations

The timing limit exceeded flag (DQ5) can be read by making read access to the flash memory area
during the execution of the automatic algorithm. Figure 1-15. shows the state transition of the timing limit
exceeded flag (DQ5).
Figure 1-15. State Transition of Timing Limit Exceeded Flag (DQ5)

COMMAND

EXECUTE
READ/RESET STATE
AUTOMATIC ALGORITHM
DQ5=DATA[5]
DQ5= "0"

NORMAL END

TIMING LIMIT
EXCESS

RESET
COMMAND

ABNORMAL STATE
DQ5= "1"

If the specified time (required for the Data Write/Erase operation) has not yet been reached when the
flag is read during the execution of the automatic algorithm, the read value is "0". If the specified time
has already been exceeded, the read value is "1".
If the data polling flag (DQ7) or the toggle bit flag (DQ6) indicates that the automatic algorithm is cur-
rently being executed when the timing limit exceeded flag (DQ5) becomes "1", the Data Write/Erase
operation can be determined as unsuccessful. In such cases, issue the reset command to the flash
memory.

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 Flash Memory

1.6.5 Sector Erase Timer Flag (DQ3)

The sector erase timer flag (DQ3) indicates the end of the sector erase time-out period.

1.6.5.1 Data Write Operation

The sector erase timer flag (DQ3) can be read by making read access to the flash memory area dur-
ing the execution of the automatic algorithm for data-write operation. Figure 1-16 shows the state
transition of the sector erase timer flag (DQ3) at the data write.
Figure 1-16. State Transition of Sector Erase Timer Flag (DQ3) at Data Write

DATA WRITE
COMMAND

READ/RESET STATE DATA WRITE

DQ3=DATA[3] DQ3= "0"

NORMAL END

TIMING LIMIT
EXCESS

RESET
COMMAND

ABNORMAL STATE
DQ3= "0"

When the sector erase timer flag (DQ3) is read during the execution of the automatic algorithm, its
read value is "0". The read address is any address in the flash memory area.
When the flag is read after the completion of the automatic algorithm, the read value is bit 3 of the
data at that address. The flash memory returns to the read/reset state. The data written in the flash
memory is read as normal read data.

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 Flash Memory

1.6.5.2 Chip Erase Operation

The sector erase timer flag (DQ3) can be read by making read access to the flash memory area dur-
ing the execution of the automatic algorithm for chip erase operations. Figure 1-17 shows the state
transition of the sector erase timer flag (DQ3) at the chip erase.
Figure 1-17. State Transition of Sector Erase Timer Flag (DQ3) at Chip Erase

CHIP ERASE
COMMAND

READ/RESET STATE CHIP ERASE

DQ3=DATA[3] DQ3= "1"

NORMAL END

TIMING LIMIT
EXCESS

RESET
COMMAND

ABNORMAL STATE
DQ3= "1"

When the sector erase timer flag (DQ3) is read during the execution of the automatic algorithm, its
read value is "1". The read address is any address in the flash memory area.
When the flag is read after the completion of the automatic algorithm, the read value is "1". The flash
memory returns to the read/reset state. The data erased from the flash memory is read as normal
read data.

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 Flash Memory

1.6.5.3 Sector Erase Operation

The sector erase timer flag (DQ3) can be read by making read access to the flash memory area dur-
ing the execution of the automatic algorithm for sector erase operation. Figure 1-18 shows the state
transition of the sector erase timer flag (DQ3) at the sector erase.
Figure 1-18. State Transition of Sector Erase Timer Flag (DQ3) at Sector Erase

SECTOR ERASE
COMMAND

SECTOR ERASE
READ/RESET STATE
TIMEOUT PERIOD
DQ3=DATA[3]
DQ3= "0"

RESET TIMEOUT PERIOD

COMMAND EXCESS
NORMAL END

SECTOR ERASE
ABNORMAL STATE
PERIOD
DQ3= "0"
DQ3= "1"

TIMING LIMIT
EXCESS

When the sector erase command is issued, the read value of the sector erase timer flag (DQ3) is set
to "0". After that, when the sector erase timeout period is reached, the read value is changed to "1".
After the sector erase timeout period is reached, the read value is "1" during the execution of the
automatic algorithm.
When the flag is read after the completion of the automatic algorithm, the read value is "1". The flash
memory returns to the read/reset state. The data erased from the flash memory is read as normal
read data.

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 Flash Memory

1.6.5.4 Sector Erase Suspend Operation

The sector erase timer flag (DQ3) can be read by making read access to the sector that is to be
erased in the flash memory area during the suspension of a sector erase operation. Figure 1-19
shows the state transition of the sector erase timer flag (DQ3) at the suspending sector erase.
Figure 1-19. State Transition of Sector Erase Timer Flag (DQ3) at Suspending Sector Erase

SECTOR ERASE
SUSPEND
COMMAND

SECTOR ERASE SUSPENDING

TIMEOUT PERIOD SECTOR ERASE
DQ3= "0" DQ3= "0"

SECTOR ERASE
SUSPEND
COMMAND

READ
SECTOR
SECTOR ERASE (NOT ERASE
ERASE RESUME
DQ3= "1" COMMAND TARGET SECTOR)
DQ3=DATA[3]

When the sector erase timer flag (DQ3) is read during the suspension of a sector erase operation, its
read value is "0". The read address is the address of the sector to be erased in the flash memory
area. When the sector erase operation is resumed, the read value of the sector erase timer flag
(DQ3) is changed to "1".
When the sector that is not to be erased is read during the suspension of a sector erase operation,
the read value is bit 3 of the data at that address. The data written in the flash memory is read as
normal read data.

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 Flash Memory

1.7 Explanation of Operations

This section explains the operations of the flash memory and how to use them.

1.7.1 Read Operation

Data can be read from the flash memory, when it is in the read/reset state. No command needs to be
issued for the read operation. Just do a read access to read out a data from flash memory.
The flash memory goes to the read/reset state when the power is turned on, the MCU is reset, the
automatic algorithm is completed, or the reset command is issued.

1.7.2 Resetting Flash Memory

The flash memory goes to the read/reset state, when the reset command is issued to the flash 
memory.
If the timing limit exceeded flag (DQ5) indicates "1" because the Data Write/Erase operation has not
been completed within a specified time, it can be determined that an error has occurred. In such
cases, issue the reset command to the flash memory to put it back to the read/reset state.

1.7.3 Writing Data

A word data can be written by issuing the data write command to the flash memory.

1.7.3.1 Writing Data

The unit used for writing data is by word. Each time the data write command is issued, one word is
written. There is no restriction on the order of address where data is written. Data can also be written
to a different sector of the flash memory by changing the sector.
The flash memory can change a bit value from "1" to "0" or keep a bit value, through data write oper-
ations. However, bit value "0" cannot be changed to "1". Written data can be overwritten. Table 1-17
shows the example of writable bit patterns at data write.
Table 1-17. Examples of Writable Bit Pattern at Data Write

Old data Write data Old data Write data

1111111111111111B 0000000000000000B 1111111111000000B 1111111110000000B

1111111111111111B 1111111111111111B 1111111110000000 1111101000000000B

B

1111111111111010B 1010111111111010B 1100101010101100 0100101010101100B

B

000000000001000
0000000000000000B 1111111111111111B 1111111111101111B
0B

1.7.3.2 Write Protection

The data-write operation is only possible to a write enabled sector of the flash memory.

1.7.3.3 Procedure for Writing Data

Issue the data write command when the flash memory is in the read/reset state. Once the data write
command is issued, the flash memory performs the automatic algorithm to write data automatically.

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 Flash Memory

After issuing the data write command to the flash memory, read the hardware sequence flag to
check if the automatic algorithm is completed. The data polling flag (DQ7) or the toggle bit flag (DQ6)
can be used to confirm if the data write operation is completed.
The timing limit exceeded flag (DQ5) can be checked to detect an unsuccessful data write operation.
The data polling flag (DQ7) may change almost at the same time as the timing limit exceeded flag
(DQ5). Check the data polling flag (DQ7) again after the timing limit exceeded flag (DQ5) indicates
"1".
Similarly, the toggle bit flag (DQ6) may also stop its toggle operation almost at the same time as the
timing limit exceeded flag (DQ5). Check the toggle bit flag (DQ6) again after the timing limit
exceeded flag (DQ5) indicates "1".
Figure 1-20 shows the example of the flash memory data write procedure using the data polling flag
(DQ7).
Figure 1-20. Example of Flash Memory Data Write Procedure

Start

FMCS:WE "1"
Write enabled

Issue data write command

Read hardware sequence flag

(DQ7, DQ5)

YES
DQ7=PD[7]?

NO

YES
DQ5= "0" ?

NO

Read hardware sequence flag

(DQ7)

NO
DQ7=PD[7]?

YES

NO
All data finished ?

YES

FMCS:WE "0" PD[7] : Bit 7 of data specified by

Write disabled data write command
Write error

End

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 Flash Memory

1.7.4 Chip Erase Operation

The contents of all sectors can be erased by issuing the chip erase command to the flash memory.

1.7.5 Chip Erase Operation

The chip erase operation erases data from all of the sectors of the flash memory. When the contents
of a sector are erased, all bits of the sector are set to "1".

1.7.5.1 Write Protection

The chip erase operation is enabled by writing the chip erase command sequence to a write enabled
sector of the flash memory.
The chip erase operation cannot be performed from a sector that is not write enabled, even if the
chip erase command sequence is written to the sector. Once the chip erase operation is performed
from a write enabled sector, the contents of all of the sectors are erased including that is not write
enabled.

1.7.5.2 Procedure for Chip Erase Operation

Issue the chip erase command when the flash memory is in the read/reset state. Once the chip
erase command is issued, the flash memory performs the automatic algorithm to erase the contents
of all sectors automatically.
After issuing the chip erase command to the flash memory, read the hardware sequence flag to
check if the automatic algorithm is completed. The data polling flag (DQ7) or the toggle bit flag (DQ6)
can be used to confirm if the chip erase operation is completed.
The timing limit exceeded flag (DQ5) can be checked to detect an unsuccessful chip erase opera-
tion. The data polling flag (DQ7) may change almost at the same time as the timing limit exceeded
flag (DQ5). Check the data polling flag (DQ7) again after the timing limit exceeded flag (DQ5) indi-
cates "1".
Similarly, the toggle bit flag (DQ6) may also stop its toggle operation almost at the same time as the
timing limit exceeded flag (DQ5). Check the toggle bit flag (DQ6) again after the timing limit exceeded
flag (DQ5) indicates "1".
Figure 1-21 shows the example of the flash memory chip erase procedure using the toggle bit flag
(DQ6).

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 Flash Memory

Figure 1-21. Example of Flash Memory Chip Erase Procedure

Start

FMCS:WE "1"
Write enabled

Issue chip erase command

Read hardware sequence flag

(DQ6)

temp DQ6

Read hardware sequence flag

(DQ6, DQ5)

YES
DQ6 = temp ?

NO (Toggle)

YES
DQ5 = "0" ?

NO

temp DQ6

Read hardware sequence flag

(DQ6)

DQ6 = temp ?
NO (Toggle)
YES

FMCS:WE "0" temp : Temporary variable for

Erase error Write disabled toggle operation detection

End

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 Flash Memory

1.7.6 Sector Erase Operation

The contents of a sector can be erased by issuing the sector erase command to the flash memory.

1.7.6.1 Sector Erase Operation

The sector erase operation erases the contents of specified sectors of the flash memory. One or
more sectors can be specified. Once the contents of the specified sector(s) are erased, all bits of
these sectors are set to "1".

1.7.6.2 Write Protection

The sector erase operation is enabled by writing the sector erase command sequence to a write
enabled sector of the flash memory.

1.7.6.3 Procedure for Sector Erase Operation

Issue the sector erase command when the flash memory is in the read/reset state. Once the sector
erase command is issued, the flash memory executes the automatic algorithm to erase the contents
of the specified sector(s) automatically.
Once the sector erase command is issued, the flash memory starts the sector erase timeout period.
The minimum sector erase timeout period is 50 s. When erasing the contents of multiple sectors,
specify such sectors by writing the sector erase code within the sector erase timeout period. Write
the sector erase code to the sectors whose contents are to be erased.
The sector erase timeout period can be checked by the sector erase timer flag (DQ3) that is one of
the hardware sequence flags. When specifying multiple sectors, make sure that the sector erase
timer flag (DQ3) is "0" every time after writing an additional sector erase code. If the sector erase
timer flag (DQ3) is "1", the last sector erase code may not have been written within the sector erase
timeout period.
If the sector erase timer flag (DQ3) changes to "1" while specifying a sector whose contents are to
be erased, stop the process of specifying sectors. Reissue the sector erase command later for sec-
tors including the last specified sector, after the automatic algorithm is completed.
After issuing the sector erase command and the sector erase code to the flash memory, read the
hardware sequence flag to check if the automatic algorithm is completed. The data polling flag
(DQ7) or the toggle bit flag (DQ6) can be used to confirm if the sector erase operation is completed.
In this series, the data polling flag (DQ7) becomes "1", when the sector erase command is issued.
After that, it changes to "0", when the sector erase timeout period is reached. And once the auto-
matic algorithm is completed, it changes to "1". To confirm that the sector erase operation is com-
pleted, check that the data polling flag (DQ7) has changed to "1"  "0"  "1". Or, check that the
data polling flag (DQ7) has changed from "0" to "1", after the sector erase timer flag (DQ3) became
"1".
The timing limit exceeded flag (DQ5) can be checked to detect an unsuccessful sector erase opera-
tion. The data polling flag (DQ7) may change almost at the same time as the timing limit exceeded
flag (DQ5). Check the data polling flag (DQ7) again after the timing limit exceeded flag (DQ5)
indicates "1".
Similarly, the toggle bit flag (DQ6) may also stop its toggle operation almost at the same time as the
timing limit exceeded flag (DQ5). Check the toggle bit flag (DQ6) again after the timing limit exceeded
flag (DQ5) indicates "1".
Figure 1-22 shows the example of the flash memory sector erase procedure using the toggle bit flag
(DQ6).

F2MC-16LX Flash Programming Manual, Doc. # 002-06656 Rev. *A 40

 Flash Memory

Figure 1-22. Example of Flash Memory Sector Erase Procedure

Start

FMCS:WE "1"
Write enabled

Issue sector erase command

YES Another sectors

to be erased ?
NO
Write sector erase command
Read hardware sequence flag 1
(DQ6_1)
Read hardware sequence flag
(DQ3)
Read hardware sequence flag 2
(DQ6_2, DQ5)
NO
DQ3 = 1 ?
YES
YES DQ6_1 = DQ6_2 ?

FLAG "1" NO (Toggle)

NO
DQ5 = "1"

YES

FLAG : Flag that indicates Read hardware sequence flag 1

erased sector could not (DQ6_1)
be added for sector erase
time-out period.
Read hardware sequence flag 2
(DQ6_2)

NO
DQ6_1 = DQ6_2 ?

YES

FLAG = "1" ?
YES
NO

Erase error FMCS:WE "0"

Write disabled

End

F2MC-16LX Flash Programming Manual, Doc. # 002-06656 Rev. *A 41

 Flash Memory

1.7.7 Sector Erase Suspend Operation

A sector erase operation can be suspended by issuing the sector erase suspend command to the
flash memory during the sector erase operation.

1.7.7.1 Sector Erase Suspend Operation

During the suspension of a sector erase operation, data can be read from sectors other than erase
target sectors.

1.7.7.2 Procedure for Sector Erase Suspend Operation

The sector erase suspend command is valid only during the execution of the automatic algorithm for
sector erase operations, including the sector erase timeout period. If the sector erase suspend com-
mand is issued during the sector erase timeout period, the sector erase timeout period is terminated
immediately in order to suspend the sector erase operation.
When the sector erase suspend command is issued during a sector erase operation after the sector
erase timeout period is reached, it takes up to 20 s for the sector erase operation to be suspended.
Before issuing the sector erase suspend command, wait for 20s or more to elapse after the sector
erase command or the sector erase resume command is issued.
The hardware sequence flag can be read by read access from erase target sectors, during the sus-
pension of a sector erase operation. During the suspension of the sector erase operation, the read
value of the data polling flag (DQ7) is "1", and the read value of the toggle bit flag (DQ6) is also "1".
After issuing the sector erase suspend command, make sure that the sector erase operation has
been suspended.
Figure 1-23 shows the example of the flash memory suspending sector erase procedure using the
toggle bit flag (DQ6).

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 Flash Memory

Figure 1-23. Example of Flash Memory Sector Erase Suspend Procedure

Start

Confirm elapse of 20 µs

NO
Elapse of 20 µs ?

YES

Issue sector erase

suspend command

Read hardware sequence flag

(DQ6)

temp DQ6

Read hardware sequence flag

(DQ6)

DQ6 = temp ?
NO (Toggle)
YES
temp : Temporary variable for
toggle operation detection
Suspend sector erase

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 Flash Memory

1.7.8 Sector Erase Resume Operation

A sector erase operation can be resumed by issuing the sector erase resume command to the flash
memory during the suspension of the sector erase operation.

1.7.8.1 Sector Erase Resume Operation

Once the sector erase operation is resumed, the automatic algorithm for sector erase operations
restarts its execution.

1.7.8.2 Procedure for Resuming Sector Erase Operation

Issue the sector erase resume command when the sector erase operation is being suspended. The
flash memory resumes the automatic algorithm for sector erase operations to erase the contents of
the remaining sectors automatically.
After issuing the sector erase resume command to the flash memory, read the hardware sequence
flag to check if the automatic algorithm for sector erase operations has been resumed and 
completed. The procedure to confirm the completion of the sector erase operation is the same as
described in "1.7.6 Sector Erase Operation".

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 Flash Memory

1.8 Flash Memory Mode

When flash memory mode is set, the built-in flash memory can be controlled via external pins. The
flash memory mode is used to perform Data Write/Erase operations using a parallel flash 
programmer.

1.8.1 Setting Flash Memory Mode

The device is switched to the flash memory mode when the signal level of the mode setting pins
(MD2 to MD0) is set and the MCU is rebooted. Table 1-18 shows the setting of the mode setting pins
for the flash memory mode.

Table 1-18. Setting of Mode Setting Pins for Flash Memory Mode

Mode Setting Pins Signal level Mode

MD2 1 (high)

MD1 1 (high) Flash Memory Mode

MD0 1 (high)

1.8.1.1 Correspondence between Flash Memory Mode Control Signal and External Pin
In flash memory mode, the MCU functions stop. The built-in flash memory is associated with exter-
nal pins via which the built-in flash memory can be controlled. The automatic algorithm of the flash
memory is activated via the external pins in order to Data Write/Erase operation. The flash memory
interface circuit is connected to ports.

1.8.1.2 Sector Configuration for Flash Memory Mode

The sector configuration for the flash memory mode is different from the sector configuration seen
from CPU. The address of the sector of the flash memory mode is called "writer address". Table 1-19
shows the sector configuration in flash memory mode.

Table 1-19. Sector Configuration in Flash Memory Mode

Address range (Writer address) Sector CPU address

FFFFFH to FE000H SA5 (8 Kbytes) FF:FFFFH to FF:E000H

FDFFFH to FC000H SA4 (8 Kbytes) FF:DFFFH to FF:C000H

FBFFFH to F0000H SA3 (48 Kbytes) FF:BFFFH to FF:0000H

EFFFFH to E4000H SA2 (48 Kbytes) FE:FFFFH to FE:4000H

E3FFFH to E2000H SA1 (8 Kbytes) FE:3FFFH to FE:2000H

E1FFFH to E0000H SA0 (8 Kbytes) FE:1FFFH to FE:0000H

F2MC-16LX Flash Programming Manual, Doc. # 002-06656 Rev. *A 45

 Flash Memory

1.9 Flash Security

The content of the flash memory can be protected by flash security.

1.9.1 Flash Security

When the protection code is written to the security bit of the flash memory, access to the flash mem-
ory is restricted to protect the content of the flash memory. Table 1-20 shows the address of the
security bit and the protection code.

Table 1-20. Address of Security Bit and Protection Code

Product Flash memory size Address of security bit Protection code

MB90F931
1 M bits FE: 0001H 01H
MB90F931S

Setting Flash Security

Write the protection code to the security bit. Security will be applied at an external reset or at power-
on. Once the security is applied, the flash memory is protected. As the security is applied to the
entire area of the flash memory. The security of each sector cannot be specified.
When the flash memory is protected, the invalid data is read via external pins. Data Write/Erase
operation except chip erase can not be performed.
Set the protection code at the end of flash programming (a series of data write/erase process). This
prevents unnecessary protection during the flash programming.

1.9.2 Canceling Flash Security

Execute chip erase operation. The security will be canceled at an external reset or at power-on.
Once the flash memory is protected, its protection will not be canceled until the chip erase operation
is performed. And unless the protection is canceled, data cannot be read from flash memory, data
write/erase operation cannot be performed via an external pin.

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 Flash Memory

1.10 Notes
This section explains the notes of the flash memory.

1.10.1 Notes
1.10.1.1 Writing data to bits whose value is "0"
Bits whose value is "0" cannot be changed to "1" by writing data to them. If an attempt is made to
write "1" to a bit to which "0" is written as its value, the flash memory is locked and the automatic
algorithm does not complete. In rare cases, however, it may complete normally as if "1" has been
written successfully.
When the flash memory is locked, the time limit is exceeded and the timing limit exceeded flag
(DQ5) indicates "1". This state represents incorrect use of the flash memory, rather than a failure in
the flash memory. If the timing limit exceeded flag (DQ5) indicates "1", issue the reset command to
the flash memory.

1.10.1.2 Issuing a command to a sector that is not write enabled

Write a command sequence to write enabled sectors of the flash memory. Write the command
sequence correctly. The flash memory may malfunction, if a command is issued to a sector that is
not write enabled, data is written to an improper address or written in an incorrect order.

1.10.1.3 Chip erase operation

When sectors that are write enabled and sectors that are not write enabled coexist, the contents of
all of the sectors, including the sectors that are not write enabled, will be erased, if the chip erase
command is issued to a sector that is write enabled.

1.10.1.4 If a reset occurs during data write/erase operation

If a hardware reset or low-voltage detection reset occurs, the data write/erase operation sequence is
initialized. The flash memory returns to read/reset state after the reset is released. The data being
written/erased become indeterminate. Therefore, issue the command of data write/erase operation
again.
It takes up to 20 s for the state machine of the flash memory that has received a hardware reset or
low-voltage detection reset to complete the reset and enable read operation. This applies to the case
in which the flash memory is currently executing an automatic algorithm due to a command other
than the reset command.
If a hardware reset or low-voltage detection reset occurs while the automatic algorithm is inactive, it
takes up to 500ns to complete the resetting of the flash memory. And once the reset is released, it
takes 200ns for read operation to be enabled.
If a software reset, watchdog timer reset or CPU operation detection reset occurs, the data write/
erase operation sequence is not initialized. After the data write/erase operation sequence is com-
pleted, the flash memory returns to read/reset state.

1.10.1.5 Mode transition during data write/erase operation

Do not change to the sub clock mode or a standby mode (time-base timer mode, watch mode, stop
mode) when the flash memory is enabled for write operation (FMCS:WE="1").

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 Flash Memory

1.10.1.6 Extended intelligent I/O service (EI2OS)

EI2OS cannot be used to accept data write/erase interrupts issued from the flash memory to the
CPU.

1.10.1.7 Fault analysis of the flash memory when security is applied

Be forewarned that fault analysis of the flash memory cannot be performed when security is applied.

1.10.1.8 Restrictions on the data polling flag (DQ7) during the sector erase operation
In this series, when the sector erase command is issued, the value of the data polling flag (DQ7)
changes differently from the original value of the automatic algorithm. In the original specification,
the flag indicates "0" when the sector erase command is issued, and it changes to "1" when the auto-
matic algorithm is completed. In this series, however, the flag indicates "1" when the sector erase
command is issued, it changes to "0" when the sector erase timeout period is reached, and then, it
changes back to "1" when the automatic algorithm is completed. Figure 1-24 shows the difference in
the value of the data polling flag (DQ7) during the sector erase operation.
Figure 1-24. Difference in the Value of Data Polling Flag (DQ7) during the Sector Erase Operation

Command sequence Sector erase code

Write the command

sequence for the
sector erase

DQ7
(Original specification)

DQ7
(This series)

DQ3

Activation of End of Completion of

automatic sector erase automatic
algorithm timeout period algorithm

F2MC-16LX Flash Programming Manual, Doc. # 002-06656 Rev. *A 48

 Index

A Hardware Sequence Flag21

Automatic Algorithm Flash Memory
Automatic Algorithm13 Enabling Write Access to Flash Memory11
Flash Memory Area4
Flash Memory Registers5
Performing Data Write/Erase Operation for
B the Flash Memory12
Block Diagram Resetting Flash Memory35
Block Diagram3 Size and Products of Flash Memory3
Flash Memory Control Status Register
Flash Memory Control Status Register (FMCS)
6
C Flash Memory Mode
Chip Erase Correspondence between Flash Memory Mode 
Chip Erase Operation24, 32, 38 Control Signal and External Pin
Chip Erase/Sector Erase Operations28 46
Data Write/Chip Erase/Sector Erase Operations Sector Configuration for Flash Memory Mode
30 46
Procedure for Chip Erase Operation38 Setting Flash Memory Mode46
Chip Erase Command Flash Memory Write Control Register
Chip Erase Command17 Flash Memory Write Control Register 
Command (FWR1/FWR0)8
Chip Erase Command17 Flash Security
Data Write Command16 Canceling Flash Security47
Reset Command15 Flash Security47
Sector Erase Command18 FMCS
Sector Erase Resume Command20 Flash Memory Control Status Register (FMCS)
Sector Erase Suspend Command19 6
Command Sequence FWR
Command Sequence13 Flash Memory Write Control Register 
(FWR1/FWR0)8

D
Data Write Command H
Data Write Command16 Hardware Sequence Flag
Hardware Sequence Flag21

E
Erase Operation M
Performing Data Write/Erase Operation for  Mode
the Flash Memory12
External Pin Correspondence between Flash Memory Mode 
Correspondence between Flash Memory Mode  Control Signal and External Pin
Control Signal and External Pin46 46
Sector Configuration for Flash Memory Mode
46
Setting Flash Memory Mode46
F
Flag

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 Index

O Sector Erase Resume

Sector Erase Resume Operation45
Operation
Performing Data Write/Erase Operation for  Sector Erase Resume Command
the Flash Memory12 Sector Erase Resume Command20
Sector Erase Suspend
Procedure for Sector Erase Suspend Operation
43
P Sector Erase Suspend Operation
Procedure 26, 29, 34, 43
Procedure for Chip Erase Operation38 Sector Erase Suspend Command
Procedure for Resuming Sector Erase Operation Sector Erase Suspend Command19
45 Sectors
Procedure for Sector Erase Operation40 Enabling/Disabling Write Access to Sectors
Procedure for Sector Erase Suspend Operation 10
43 Security
Procedure for Writing Data36 Flash Security47
Protection Suspend Command
Write Protection38, 40 Sector Erase Suspend Command19

R W
Read Write
Read Operation35 Data Write/Chip Erase/Sector Erase Operations
Register 30
Flash Memory Write Control Register  Performing Data Write/Erase Operation for 
(FWR1/FWR0)8 the Flash Memory12
Reset Command Write Protection36
Reset Command15 Write Access
Resetting Enabling Write Access to Flash Memory
Resetting Flash Memory35 11
Resume Command Enabling/Disabling Write Access to Sectors
Sector Erase Resume Command20 10
Resuming Sector Erase Write Operation
Procedure for Resuming Sector Erase Operation Data Write Operation23, 27, 31
45 Write Protection
Write Protection36, 38, 40
Writing Data
Procedure for Writing Data36
S
Sector
Sector Configuration4
Sector Configuration
Sector Configuration4
Sector Configuration for Flash Memory Mode
46
Sector Erase
Chip Erase/Sector Erase Operations28
Data Write/Chip Erase/Sector Erase Operations
30
Procedure for Sector Erase Operation40
Sector Erase Operation25, 33, 40
Sector Erase Command
Sector Erase Command18

F2MC-16LX Flash Programming Manual, Doc. # 002-06656 Rev. *A 50

 3. Major changes

Spansion Publication Number:CM44-00119-1E

Page Changes (For details, refer to main body.)

- First edition

FOR MORE DETAILS PLEASE SEE THE DOCUMENT HISTORY TABLE

F2MC-16LX Flash Programming Manual, Doc. # 002-06656 Rev. *A 51

 Revision History

Document Revision History

Document Title: F2MC-16LX Flash Programming Manual
Document Number: 002-06656
Origin of
Revision ECN# Issue Date Description of Change
Change
**  03/23/2010 MITK Initial release
*A 5325341 08/29/2016 MITK Migrated to Cypress format

F2MC-16LX Flash Programming Manual, Doc. # 002-06656 Rev. *A 52