Quantum Mechanics

• Particlelike pproperties
p of light:
g Photon, energy
gy qquanta
• Wavelike properties of particles
• Wave-particle
p dualityy
• Uncertainty principle
• Schrodinger’s
Sc od ge s wave equa equation
o
• Physical meaning of wave function
• Examples
 Electron in free space

 Infinite potential well

 Step potential

 Potential barrier and tunneling

• Direct tunneling in MOSFET

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 Energy
gy Quanta
• Photoelectric effect

Φ: work function
* Particlelike
P i l lik property off li
light
h Photon:
Ph t
E = hν
slope = h
Planck’s constant
10-34
34 J･s

W: Z = 74,
Φ = 4.52 eV

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 Wavelike Property
• Interference: double-slit experiment

intensity max. |X1-X2| = n, n = 0, 1, …

intensity min. |X1-X2| = (n+1/2), n = 0, 1, …

• e-, neutrons, protons, ... also

show interference pattern
* Wavelike property of e-, …
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Wave-Particle Duality, Uncertainty Principle
• Momentum of a photon:

• Wavelength of a particle: (de Broglie wavelength)

cm/s  = ? (vsat of e- in Si)
* Example: an e- traveling at v = 107 cm/s,

(vs 5 A )
(vs.
= h/2
• Position
P iti andd momentum
t off a particle:
ti l 0
• Energy and instant of time of a particle:
* Example: an e- with v = 107 cm/s within 1% of precision, x = ?
x  ħ/px = 1.0510-34/(0.019.1110-26) = 1.1510-7m = 1150 A
(vs. 5 A ) 4
 Schrodinger’s
g Wave Equation
• 1-D nonrelativistic Schrodinger’s wave equation:

j = √(-1)

Ψ (x, t): wave function, V(x): potential function

• Assume:

then

= constant =

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Time-Dependent
p Portion

solution: = 

= cos(t) - jsin(t)
(exponential form of a sinusoidal wave)

= h/2
E = hν = (h/(2/ => =E

then:
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 Time-Independent
p Portion

E total
E: t t l energy off the
th particle
ti l

* Time-independent Schrodinger’s wave equation:

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 Physical
y Meaningg of Wave Function

(Position-dependent function) × (time-dependent function)

* Probability
b bili density
d i function:
f i

0
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 Boundary Conditions
• (probability) = 1

• If total energy E and potential V(x) are finite everywhere,

and must be finite, single
single-valued,
valued, and continuous
 If V(x) = , (x) must = 0, otherwise (E-V)(x) = 

not
continuous continuous
ti

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Electron in Free Space
p ((Free Particle))
F = -dV(x)/dx = 0
• Time-independent wave equation:
=>

solution:

or

• Time-dependent solution:

• Total solution: (a traveling wave, everywhere is possible)

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 Electron in Free Space
 + 
* Consider the first term:

then ) 2
p = mv,, E = ((1/2)mv
since = h/2

then
h or (2 f) / (f) = /v
= (2f) /

= > (
(x,t)
, ) = Ae j(kx–t) = Ae j[(/v)x–t] = Acos(t-x/v)
( ) - jjAsin(t-x/v)
( )

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 Infinite Potential Well
Region II:
solution:
boundary cos(0)) => A1 = 0
= A1 cos(
conditions: => k = (n /a)
n = 1,
1 2,
2 3,…(quantum
3 (quantum number)
=> A2 =
V= V=
=0 =0 =>

=>
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Infinite Potential Well

n = 1, 2, 3,…

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 Infinite Potential Well
* Example: an e- in an infinite potential well of width 5 A (0.5 nm)

=0 =0

||2 = 0 ||2 = 0

Si: Z = 14, 1s22s22p63s23p2

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 Step Potential
Region I:
solution:
 + 
Region II:
* for E < V0:
solution:
2 is finite as x   => B2 = 0
B.C.
1(0) = 2(0),
(0) A1 + B1 = A2 V=0 V = V0
1 2
, jk1A1 – jk1B1= -k2A2

=> relationship between A1 , B1 , A2

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 Step Potential
* in Region I: reflection coefficient E < V0

 +  1 2
 classical
physics
* in Region II: A2  0 => 2(x)2*(x)  0
=> particle penetrating potential barrier  quantum mechanics
* Example: an e- traveling at v = 107 cm/s in region I, if V0 = 2E,
find the penetration depth (d) when 2(d) = e-112(0)

d
1 = k2d,

(vs. 5 A ) 16
 Potential Barrier and Tunneling
 + 
solution:

, B3 = 0 (no reflect)
 + 
1((0)) = 2((0))
1’(0) = 2’ (0)
B.C.
2(a) = 3(a)
2’(a) = 3’ (a)

=> relationship between V=0 V = V0 V=0

1 2 3
A1 , B1 , A2 , B2 , A3

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 Potential Barrier and Tunneling
g
* in Region III: transmission coefficient:

when E << V0 :  e2k2a

* Example: an e- with E = 2 eV,
eV potential barrier V0 = 20 eV and
a width of 3A , T = ?

 + 

1 2 3
 + 

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 Direct Tunneling
L in MOSFET with
Tox Thin SiO2

Tox
L

L  , Tox => >

T, Ioff (leakage)

Ioff = Id @ Vg = 0 V, Vd = Vdd
if Ioff = 3×10-5 A/m
3 10-12
f W = 100 nm, Ioff = 3×10
for 12 A

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 Challenges in IC

2021.9 iPhone 13 Pro: A15, 5 nm, 1.51010 transistors, 3095 mAh

2022.9 iPhone 14 Pro: A16, 4 nm, 1.61010 transistors, 3200 mAh
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 Higk-k Gate Dielectrics in MOSFET
L ,
 Cd  but needs Coxe >> Cd
Coxe   ox / Tox  (k   0) / Tox
=> Coxe by Tox  or k  L
* Oxide : SiO2→SiON→HfO2
k 3.9 7.9 25
Coxe   SiO2 / EOTe
EOTe = Tox × (kSiO2 / kox)
k: thicker Tox still thin EOTe

physics + material + technology

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