SEP ELECTRONIC CORP.

DB101 thru DB107

1.0 A Single-Phase Glass Passivated Bridge Rectifiers
Rectifier Reverse Voltage 50 to 1000V

DB

Features _ + 6.35 + 0.15

This series is UL listed under the Recognized
7.62 + 0.38
Component Index, file number E142814
The plastic material used carries Underwriters Laboratory ~ ~
flammability recognition 94V-0 8.25 + 0.65
Surge overload ratings to 50 amperes
Ideal for printed circuit board application 8.32 + 0.19
High temperature soldering guaranteed 265 C /10
seconds at 5 lbs (2.3kg) tension
2.35 + 0.15 1.65 + 0.38
Mechanical Data 1.01 + 0.13
Case: Molded plastic 4.25 + 0.44
Terminals: Plated leads solderable per MIL-STD-202, 0.52 + 0.06
Method 208 5.1 + 0.1
Polarity: Marked on body
Mounting Position: Any
Weight: 0.04 ounce, 1.0 grams (approx) Dimensions in millimeters ( 1mm =0.0394" )

Maximum Ratings & Thermal Characteristics

Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
Parameter Symbol DB101 DB102 DB103 DB104 DB105 DB106 DB107 unit
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V

Maximum RMS bridge input voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified IF(AV) 1.0 A
output current at TA=40 C
Peak forward surge current single sine-wave IFSM 50 A
superimposed on rated load (JEDEC Method)
2 2
Rating for fusing ( t<8.3ms) I t 10 A sec
Typical thermal resistance per element (1) ReJA 110 C/W
Typical junction capacitance per element (2) Cj 25.0 pF
Operating junction and storage temperature TJ,
range -55 to + 150 C
TSTG

Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.
For Capacitive load derate by 20 %.
Parameter Symbol DB101 DB102 DB103 DB104 DB105 DB106 DB107 Unit
Maximum instantaneous forward voltage drop 1.1
per leg at 1.0A VF V

Maximum DC reverse current at rated TA =25 C 10

IR A
DC blocking voltage per element TA =125 C 500
Notes: (1)Thermal resistance from Junction to Ambemt on P.C.board mounting.
(2)Measured at 2.0MHz and applied reverse voltage of 4.0 volts.

2004 SEP ELECTRONIC CORP. www.sep-semi.com Rev.1

 Rating and Characteristic Curves ( TA=25 C Unless otherwise noted )
DB101 thru DB107

Fig. 1 Derating Curve for Fig. 2 Maximum Non-repetitive Peak

Output Rectified Current Forward Surge Current

Peak Forward Surge Current,

1.0 60

60Hz Resistive of 50 8.3ms

Inductive Load Single half-sine-Wave
Average Forward Output

[JEDEC Method]
40
30
Current, Amperes

20

Amperes
0.5 10

0
1 10 100
Number of Cycles at 60HZ
Fig. 4 Typical Revers Characteristics
100
0
40 60 80 100 120 140
Tj=125 C
Instantaneous Reverse

Case Temperature, C 10
Current ,Amperes

1.0

Fig. 3 Typical Instantaneous Tj=25 C

0.1
Forward Characteristics

10 .01
0 20 40 60 80 100 120 140
Instantaneous Forward Current,

Tj=25 C
Pulse Width=300us Percent of Rated Peak Reverse
2% duty cycle Voltage, %

1.0
Fig. 5 Typical Junction Capacitance
100
Tj=25 C
f=1.0MHz
0.1 Vsig =50mV p.p.
Amperes

Capacitance, pF

.01 10
0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward
Voltage, Volts

1 1.5 2 10 100

Reverse Voltage, Volts

2004 SEP ELECTRONIC CORP. www.sep-semi.com Rev.1