Bulletin PD-20644 rev.

D 03/03

MBRS120
SCHOTTKY RECTIFIER 1 Amp

SMB

Major Ratings and Characteristics Description/Features

Characteristics MBRS120 Units The MBRS120 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
IF(AV) Rectangular 1.0 A
drives, switching power supplies, converters, free-wheeling
waveform
diodes, battery charging, and reverse battery protection.
VRRM 20 V
Small foot print, surface mountable
Very low forward voltage drop
IFSM @ tp= 5 µs sine 310 A
High frequency operation
Guard ring for enhanced ruggedness and long term
VF @ 1.0Apk, TJ = 125°C 0.35 V reliability

TJ range - 65 to 150 °C

Device Marking: IR12 CATHODE ANODE

2.15 (.085) 1 2
3.80 (.150)
1.80 (.071) 3.30 (.130)

4.70 (.185) 1 POLARITY 2 PART NUMBER

4.10 (.161)

2.5 TYP. SOLDERING PAD

(.098 TYP.)
2.40 (.094)
1.90 (.075)

0.30 (.012)
1.30 (.051) 0.15 (.006) 2.0 TYP.
0.76 (.030) 5.60 (.220) (.079 TYP.)
4.2 (.165)
5.00 (.197)
4.0 (.157)

Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994

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MBRS120
Bulletin PD-20644 rev. D 03/03

Voltage Ratings
Part number MBRS120
VR Max. DC Reverse Voltage (V)
20
VRWM Max. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters Value Units Conditions
IF(AV) Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 138°C, rectangular wave form

IFSM Max. Peak One Cycle Non-Repetitive 310 5µs Sine or 3µs Rect. pulse Following any rated
load condition and
Surge Current 40 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non Repetitive Avalanche Energy 2.0 mJ TJ = 25 °C, IAS = 1A, L = 4mH
IAR Repetitive Avalanche Current 0.8 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical

Electrical Specifications
Parameters Typ. Max. Units Conditions
VFM Max. Forward Voltage Drop (1) 0.42 0.45 V @ 1A
TJ = 25 °C
0.46 0.52 V @ 2A
0.33 0.37 V @ 1A
TJ = 100 °C
0.39 0.45 V @ 2A
0.30 0.35 V @ 1A
TJ = 125 °C
0.36 0.43 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.015 0.2 mA T J = 25 °C
2.0 6.0 mA TJ = 100 °C VR = rated VR
7.0 20 mA TJ = 125 °C
CT Typical Junction Capacitance 110 - pF VR = 5VDC (test signal range 100kHz to
1Mhz), @ 25°C
LS Typical Series Inductance 2.0 - nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change - 10000 V/ µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters Value Units Conditions
TJ Max. Junction Temperature Range (*) - 65 to 150 °C
Tstg Max. Storage Temperature Range - 65 to 150 °C
RthJL Max. Thermal Resistance Junction 30 °C/W DC operation
to Lead (**)
RthJA Max. Thermal Resistance Junction 80 °C/W
to Ambient
Wt Approximate Weight 0.10(0.003) gr (oz)
Case Style SMB Similar DO-214AA
Device Marking IR12
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink (**) Mounted 1 inch square PCB
dTj Rth( j-a)

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 MBRS120
Bulletin PD-20644 rev. D 03/03

100
Tj = 150˚C
10 10

Reverse Current - I R (mA)

125˚C
100˚C
1
75˚C

0.1 50˚C

25˚C
0.01

0.001
Instantaneous Forward Current - I F (A)

0.0001
0 5 10 15 20
Reverse Voltage - VR (V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1

Tj = 150˚C

Tj = 125˚C 1000
Tj = 100˚C
Junction Capacitance - C T (pF)

Tj = 25˚C Tj = 25˚C

100

0.1
0 0.2 0.4 0.6 0.8 1
Forward Voltage Drop - V FM (V) 10
Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 4 8 12 16 20
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage

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MBRS120
Bulletin PD-20644 rev. D 03/03

150 0.5
D = 0.20
D = 0.20
Allowable Lead Temperature (°C)

D = 0.25
D = 0.25

Allowable Power Loss (Watts)

0.4 D = 0.33
D = 0.33
145 D = 0.50
D = 0.50
D = 0.75
D = 0.75
0.3
RMS Limit
140
0.2 DC
Square wave DC
135
0.1
see note (2)

130 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6
Average Forward Current - I F(AV) (A) Average Forward Current - I F(AV) (A)
Fig. 4 - Maximum Average Forward Current Fig. 5 - Maximum Average Forward Dissipation
Vs. Allowable Lead Temperature Vs. Average Forward Current

1000
Non-Repetitive Surge Current - I FSM (A)

At Any Rated Load Condition

And With Rated Vrrm Applied
Following Surge

100

Tj = 25˚C

10
10 100 1000 10000
Square Wave Pulse Duration - t p (microsec)

Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration

(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;

Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D)

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 MBRS120
Bulletin PD-20644 rev. D 03/03

Tape & Reel Information

Dimensions in millimetres and (inches)

Marking & Identification Ordering Information

Each device has 2 rows for identification. The first row MBRS120TR - TAPE AND REEL
designates the device as manufactured by International
Rectifier as indicated by the letters "IR", and the Part WHEN ORDERING, INDICATE THE PART
Number (indicates the current and the voltage rating).
NUMBER AND THE QUANTITY ( IN MULTIPLES OF
The second row indicates the year, the week of
manufacturing and the Site ID. 3000 PIECES).

EXAMPLE: MBRS120TR - 6000 PIECES

IR12
VOLTAGE

CURRENT

IR LOGO

YYWWX SITE ID

WEEK

YEAR

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MBRS120
Bulletin PD-20644 rev. D 03/03

Data and specifications subject to change without notice.

This product has been designed for Industrial Level.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03

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